Electron transport properties of three-dimensional topological insulators

We review experimental advances in the study of the electron transport in three-dimensional topological insulators with emphasis on experiments that attempted to identify the surface transport. Recent results on transport properties of topological insulator thin films will be discussed in the context of weak antilocalization and electron-electron interactions. Current status of gate-voltage control of the chemical potential in topological insulators will also be described.     

Electron localization in ultrathin films of three-dimensional topological insulators

The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature.     

三维拓扑绝缘体antidot阵列结构中的磁致输运研究

利用聚焦离子束刻蚀技术在拓扑绝缘体Bi_2Se_3薄膜中刻蚀了纳米尺度的反点(antidot)阵列,并对制作的三个器件进行了系统的电学输运测量研究.低温下,所有器件中都观察到明显的弱反局域化效应.通过对弱反局域化效应的分析,发现器件一(Dev-1,不含有antidot阵列)和器件二(Dev-2,含有周期较大的antidot阵列)是始终由一个导电通道主导的量子输运系统,但在器件三(Dev-3,含有周期较小的antidot阵列)中能明确观察到较低温度下存在两个独立的导电通道,而在较高温度下Dev-3表现为由一个导电通道主导的量子输运系统.     

Thermoelectric effects and topological insulators

The recent discovery of topological insulators(TIs) offers new opportunities for the development of thermoelectrics,because many TIs(like Bi_2Te_3) are excellent thermoelectric(TE) materials.In this review,we will first describe the general TE properties of TIs and show that the coexistence of the bulk and boundary states in TIs introduces unusual TE properties,including strong size effects and an anomalous Seebeck effect.Importantly,the TE figure of merit zT of TIs is no longer an intrinsic property,but depends strongly on the geometric size.The geometric parameters of twodimensional TIs can be tuned to enhance zT to be significantly greater than 1.Then a few proof-of-principle experiments on three-dimensional TIs will be discussed,which observed unconventional TE phenomena that are closely related to the topological nature of the materials.However,current experiments indicate that the metallic surface states,if their advantage of high mobility is not fully utilized,would be detrimental to TE performance.Finally,we provide an outlook for future work on topological materials,which offers great possibilities to discover exotic TE effects and may lead to significant breakthroughs in improving zT.     

Elastic scattering of surface states on three-dimensional topological insulators

Topological insulators as a new type of quantum matter materials are characterized by a full insulating gap in the bulk and gapless edge/surface states protected by the time-reversal symmetry. We propose that the interference patterns caused by the elastic scattering of defects or impurities are dominated by the surface states at the extremal points on the constant energy contour. Within such a formalism, we summarize our recent theoretical investigations on the elastic scattering of topological surface states by various imperfections, including non-magnetic impurities, magnetic impurities, step edges, and various other defects, in comparison with the recent related experiments in typical topological materials such as BiSb alloys, Bi2Te3, and Bi2Se3 crystals.     

Transport properties of topological insulators films and nanowires

The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov-Bobm effect, and the Shubnikov-de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.     

二维拓扑绝缘体退相干效应研究

拓扑绝缘体是当前凝聚态物理研究的热点.退相干效应对该体系的影响的研究不仅有重要的理论意义,而且也是实现未来量子器件的不可或缺的前期工作.文章作者从理论上研究了退相干对二维拓扑绝缘体特别是量子自旋霍尔效应的影响.研究结果表明,作为量子自旋霍尔效应的标志的量子化纵向电阻平台对不破坏自旋记忆的退相干效应（普通退相干）不敏感,但却对破坏自旋记忆的退相干效应（自旋退相干）非常敏感.因此,该量子化平台只能在尺寸小于自旋退相干长度的介观样品中存在,从而解释了量子自旋霍尔效应实验中所观测到的结果(见Science ,20     

二维拓扑绝缘体退相干效应研究

拓扑绝缘体是当前凝聚态物理研究的热点.退相干效应对该体系的影响的研究不仅有重要的理论意义,而且也是实现未来量子器件的不可或缺的前期工作.文章作者从理论上研究了退相干对二维拓扑绝缘体特别是量子自旋霍尔效应的影响.研究结果表明,作为量子自旋霍尔效应的标志的量子化纵向电阻平台对不破坏自旋记忆的退相干效应(普通退相干)不敏感,但却对破坏自旋记忆的退相干效应(自旋退相干)非常敏感.因此,该量子化平台只能在尺寸小于自旋退相干长度的介观样品中存在,从而解释了量子自旋霍尔效应实验中所观测到的结果(见Science,2007,318:766).同时,文章作者还定义了一个新的物理量,即自旋霍尔电阻,并发现该自旋霍尔电阻也有量子化平台.特别是该量子化平台对两种类型的退相干都不敏感.这说明在宏观样品中也能观测到自旋霍尔电阻的量子化平台,因此更能全面地反映量子自旋霍尔效应的拓扑特性.     

Z2拓扑不变量与拓扑绝缘体

文章回顾了几种Z2拓扑数的计算方法,并详细介绍了一种用非阿贝尔贝里联络表示绝缘体Z2不变量的计算方法.这种方法可以确定出一般能带绝缘体的拓扑性质,而不需要限定波函数的规范.利用这种新方法,文章作者计算了二维石墨烯(graphene)系统的Z2拓扑数,得到了和以前研究相一致的结论.     

Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals

Weak localization and antilocalization are quantum transport phenomena that arise from the quantum interference in disordered metals.At low temperatures,they can give distinct temperature and magnetic field dependences in conductivity,allowing the symmetry of the system to be explored.In the past few years,they have also been observed in newly emergent topological materials,including topological insulators and topological semimetals.In contrast from the conventional electrons,in these new materials the quasiparticles are described as Dirac or Weyl fermions.In this article,we review our recent efforts on the theories of weak antilocalization and interaction-induced localization for Dirac and Weyl fermions in topological insulators and topological semimetals.     

纳米尺度下超导体和拓扑绝缘体的电输运特性

超导体和拓扑绝缘体研究是当前凝聚态物理领域中的重大课题.文章重点介绍了作者所在实验室在纳米超导和拓扑绝缘体电输运领域的实验进展,其中包括金属和铁磁纳米线中的超导近邻效应、半金属纳米线中的新奇超导特性、拓扑绝缘体薄膜中的量子输运以及超导态-拓扑量子态的相互作用等,并对该领域的进一步发展进行了展望.     

Z_2拓扑不变量与拓扑绝缘体

文章回顾了几种Z2拓扑数的计算方法,并详细介绍了一种用非阿贝尔贝里联络表示绝缘体Z2不变量的计算方法.这种方法可以确定出一般能带绝缘体的拓扑性质,而不需要限定波函数的规范.利用这种新方法,文章作者计算了二维石墨烯(graphene)系统的Z2拓扑数,得到了和以前研究相一致的结论.     

Studies on the electronic structures of three-dimensional topological insulators by angle resolved photoemission spectroscopy

Three-dimensional (3D) topological insulators represent a new state of quantum matter with a bulk gap and odd number of relativistic Dirac fermions on the surface. The unusual surface states of topological insulators rise from the nontrivial topology of their electronic structures as a result of strong spin-orbital coupling. In this review, we will briefly introduce the concept of topological insulators and the experimental method that can directly probe their unique electronic structure: angle resolved photoemission spectroscopy (ARPES). A few examples are then presented to demonstrate the unique band structures of different families of topological insulators and the unusual properties of the topological surface states. Finally, we will briefly discuss the future development of topological quantum materials.     

Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

Transport properties on the surface of a topological insulator （TI） under the modulation of a two-dimensional （2D） ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n-n junction and n-p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ 0 〈π/2 and r/2 〈 0 ≤ π, the transmission probability of the n-n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n-p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs.     

磁性拓扑绝缘体中的量子化反常霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体（Bi2Se3, Bi2Te3 和 Sb2Te3）薄膜中掺杂过渡金属元素（Cr 或 Fe）实现量子化反常霍尔效应的方法.     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

(3+1)-TQFTs and topological insulators

Levin-Wen models are microscopic spin models for topological phases of matter in (2+1)-dimension. We introduce a generalization of such models to (3 + 1)-dimension based on unitary braided fusion categories, also known as unitary premodular categories. We discuss the ground state degeneracy on 3-manifolds and statistics of excitations which include both points and defect loops. Potential connections with recently proposed fractional topological insulators and projective ribbon permutation statistics are described.     

拓扑绝缘体电子态的电场调控

文章简要介绍了对拓扑绝缘体性质的电场控制,主要包括三维拓扑绝缘体表面磁性的电场控制、电子在p-n结中的类光输运行为以及拓扑绝缘体量子点的特性.     

Dephasing effects in topological insulators

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions,are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.     

拓扑绝缘体电子态的电场调控

文章简要介绍了对拓扑绝缘体性质的电场控制,主要包括三维拓扑绝缘体表面磁性的电场控制、电子在p-n结中的类光输运行为以及拓扑绝缘体量子点的特性.