Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.     

Processes of DNA condensation induced by multivalent cations： Approximate annealing experiments and molecular dynamics simulations

The condensation of DNA induced by spermine is studied by atomic force microscopy （AFM） and molecular dynamics （MD） simulation in this paper. In our experiments, an equivalent amount of multivalent cations is added to the DNA solutions in different numbers of steps, and we find that the process of DNA condensation strongly depends on the speed of adding cations. That is, the slower the spermine cations are added, the slower the DNA aggregates. The MD and steered molecular dynamics （SMD） simulation results agree well with the experimental results, and the simulation data also show that the more steps of adding multivalent cations there are, the more compact the condensed DNA structure will be. This investigation can help us to control DNA condensation and understand the complicated structures of DNA--cation complexes.     

Molecular dynamics study of temperature-dependent ripples in monolayer and bilayer graphene on 6H—SiC surfaces

Using classical molecular dynamics and a simulated annealing technique,we show that microscopic corrugations occur in monolayer and bilayer graphene on 6H-SiC substrates.From an analysis of the atomic configurations,two types of microscopic corrugations are identified,namely periodic ripples at room temperature and random ripples at high temperature.Two different kinds of ripple morphologies,each with a periodic structure,occur in the monolayer graphene due to the existence of a coincidence lattice between graphene and the SiC terminated surface(Si-or C-terminated surface).The effect of temperature on microscopic ripple morphology is shown through analysing the roughness of the graphene.A temperature-dependent multiple bonding conjugation is also shown by the broad distribution of the carbon-carbon bond length and the bond angle in the rippled graphene on the SiC surface.These results provide atomic-level information about the rippled graphene layers on the two polar faces of the 6H-SiC substrate,which is useful not only for a better understanding of the stability and structural properties of graphene,but also for the study of the electronic properties of graphene-based devices.     

Interaction of point defects with twin boundaries in Au： A molecular dynamics study

The molecular dynamics simulation technique with many-body and semi-empirical potentials （based on the embedded atom method potentials） has been used to calculate the interactions of point defects with （1 1 1）, （1 1 3）, and （1 2 0） twin boundaries in Au at different temperatures. The interactions of single-, di-, and tri-vacancies （at on- and off-mirror sites） with the twin interfaces at 300 K are calculated. All vacancy clusters are favorable at the on-mirror arrangement near the （1 1 3） twin boundary. Single- and di-vacancies are more favorable at the on-mirror sites near the （1 1 l） twin boundary, while they are favorable at the oft-mirror sites near the （1 2 0） twin boundary. Almost all vacancy clusters energetically prefer to lie in planes closest to the interface rather than away from it, except for tri-vacancies near the （1 2 0） interface at the off-mirror site and for 3.3 and 3.4 vacancy clusters at both sites near the （1 1 1） interface, which are favorable away from the interface. The interaction energy is high at high temperatures.     

A Monte Carlo study for the shielding of γ backgrounds induced by radionuclides for CDEX

The CDEX (China Dark matter EXperiment) Collaboration will carry out a direct search for WIMPs (Weakly Interacting Massive Particles) using an Ultra-Low Energy Threshold High Purity Germanium (ULE-HPGe) detector at the CJPL (China JinPing deep underground Laboratory). A complex shielding system was designed to reduce backgrounds and a detailed GEANT4 Monte Carlo simulation was performed to study the achievable reduction of γ rays induced by radionuclides and neutron backgrounds by D(γ,n)p reaction. Furthermore, the upper level of allowed radiopurity of shielding materials was estimated under the constraint of the expected goal. Compared with the radiopurity reported by other low-background rare-event experiments, it indicates that the shielding used in the CDEX can be made out of materials with obtainable radiopurity.     

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.