Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films

Thin films of pseudoamorphous GaN (a-nc-GaN), as well as of its alloys with indium, In_xGa_1−x N (x=0.04, 0.16), were prepared by magnetron sputtering of a metallic target in the plasma of a reactive nitrogen and argon mixture. The a-nc-GaN films were codoped by the Zn acceptor impurity and a set of rare-earth metal (REM) dopants, namely, Ce, Tb, Er, Sm, and Eu. Photoluminescence (PL) spectra excited by a nitrogen laser with wavelength λ=337 nm at room temperature and 77 K were measured for all compositions and a set of impurities. It was shown that the high-energy PL edge of the pseudoamorphous (a-nc) GaN matrix lies at the same energy as that of the crystalline (epitaxial) c-GaN. As in c-GaN, the Zn acceptor impurity stimulates blue luminescence; however, the PL spectrum is substantially more diffuse, with practically no temperature quenching of the PL present. Indium doping in an amount of 16 at. % results in strong PL with a diffuse peak at 2.1–2.2 eV; the PL of the alloy exhibits temperature quenching as high as a factor of three to four in the interval 77–300 K. The decay time of the PL response increases up to 50 μs. RE impurities enter the amorphous GaN host as trivalent ions and produce narrow-band (except Ce) high-intensity spectra, thus indicating both a high solubility of RE impurities in a-nc-GaN and the generation of an effective crystal field (by the GaN anion sublattice) whose local symmetry makes the intracenter f-f transitions partly allowed. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 3, 2003, pp. 395–402. Original Russian Text Copyright ? 2003 by Andreev.     

Radiation defect formation in strontium and calcium fluoride crystals doped by divalent cadmium and zinc ions

Ionization radiation is shown to reduce impurity ions to the univalent state in strontium and calcium fluoride crystals doped by divalent cadmium and zinc ions. In this case, a univalent ion is surrounded by eight equivalent fluorine ions and exhibits cubic symmetry O _h . At room temperature, the symmetry of the center is revealed to be sequentially lowered to C _3v and then to C _2v owing to the addition to the nearest environment of the impurity univalent ion of one or two anion vacancies, respectively, which are intrinsic defects not forming in undoped strontium and calcium fluoride crystals. Stable intrinsic defects are assumed to form through the separation of anion vacancy-interstitial fluorine ion pairs in the electric field induced by the reduced impurity ions. This electric field lowers the energy barrier to thermal separation of charged intrinsic defects.     

Europium luminescence in fluorite upon high-energy excitation

The reflection and luminescence excitation spectra of CaF₂ crystals containing europium ions in divalent (Eu²⁺) and trivalent (Eu³⁺) states were measured in the range from 4 to 16 eV. It was established that, in CaF₂ : Eu³⁺ crystals, luminescence of Eu³⁺ ions (the f-f transitions) is effectively excited both in the charge-transfer band (at ～8 eV) and in the region of the 4f–5d transitions (at ～10 eV) but is virtually not excited in the fundamental region of the crystal (at an energy higher than 10.5 eV). Luminescence of Eu²⁺ ions (the 427-nm band) in CaF₂ : Eu³⁺ is effectively excited in the fundamental region of the crystal; i.e., luminescence of divalent europium ions occurs through the trapping mechanism. Emission of Eu²⁺ ions in CaF₂ : Eu²⁺ crystals is characterized by the excitation band at an energy of 5.6 eV (the 4f → 5d,t _2g transitions), as well as by the exciton and interband luminescence excitations. The results obtained and data available in the literature are used to construct the energy level diagram with the basic electron transitions in the CaF₂ : Eu crystals.     

<Emphasis Type="Italic">Ab initio</Emphasis> theory of the electronic structure and spectra of impurity <Emphasis Type="Italic">nl</Emphasis> ions

The fundamentals of the theory of the electronic structure of impurity clusters and the results of numerical calculations for the iron-, lanthanum-, and actinium-group ions in Me⁺ⁿ: [L]_k clusters are presented. The effects of the interionic distance and ligands in the Me⁺ⁿ: [L]_k clusters on the electronic structure of the nl ^N and nl^N?1n′l′ configurations of the 3d, 4f, and 5f ions are considered. The correspondence between the optical and x-ray spectra of different impurity crystals is also analyzed.     

Positron states and nanoobjects in proton-irradiated quartz single crystals: Positronium atom in quartz

The influence of proton bombardment and metal atom impurities on the structure of quartz single crystals has been studied. The related defects have been studied using positron annihilation spectroscopy (angular correlation of positron-annihilation photons), acoustic absorption, and optical absorption measurements. It is shown that the presence of a narrow component f in the angular distribution of annihilation photons (ADAP), which is related to the formation of parapositronium, determines a high sensitivity of this method with respect to features of the crystal structure of quartz. It is established that the defectness of the structure of irradiated quartz crystals can be characterized by the ratio f/f ₀ of the relative intensities of narrow components in the ADAP curves measured before (f ₀) and after (f) irradiation. Any process leading to a decrease in the probability of positronium formation (e.g., positron loss as a result of the trapping on defects and the interaction with impurity atoms and lattice distortions) decreases the intensity of the narrow component. Based on the ADAP data, estimates of the radii and concentrations of nanodefects in quartz have been obtained and their variation upon annealing at temperatures up to T = 873 K has been studied.     

Effect of correlation between the shallow and deep metastable level subsystems on the excitonic photoluminescence spectra in <Emphasis Type="Italic">n</Emphasis>-GaAs

The excitonic photoluminescence spectra of GaAs epitaxial layers are studied. Changes in the relative arrangement of shallow and deep centers in the tetrahedral lattice are shown to bring about changes in the decay kinetics and the shape of the (D⁰, x) emission line (corresponding to an exciton bound to a shallow neutral donor). This change in the excitonic photoluminescence spectra is caused by dispersion in the exciton binding energy of shallow donors E_D, the dispersion being a result of the influence of the subsystem of deep metastable defects in n-GaAs crystals.     

Metastable <Emphasis Type="Italic">X</Emphasis> centers in cadmium telluride single crystals

A model is proposed for metastable DX centers formed through Jahn-Teller distortion of the crystal lattice of cadmium telluride, i.e., through the displacement of a D _Cd residual donor impurity atom (where D is a Group III element of the periodic table) to the region of a nearest neighbor interstice. The configuration-coor-dinate diagram for a V _Cd-D _i associated defect is constructed with due regard for the tetrahedral and hexagonal positions of interstitial atoms. The Stokes shift, n-type conductivity, location of the Fermi level, specific features of photoluminescence, and some other effects are explained in terms of the configuration-coordinate diagram. The results of experimental investigations of the energy spectrum of DX centers in cadmium telluride single crystals are in agreement with available theoretical data.     

Charge-transfer bands in crystals of alkaline earth fluorides with Eu<Superscript>3+</Superscript> and Yb<Superscript>3 + 1</Superscript>

The absorption, luminescence, and excitation spectra of CaF₂, SrF₂, and BaF₂ crystals with EuF₃ or YbF₃ impurity have been investigated in the range 1–12 eV. In all cases, strong wide absorption bands (denoted as CT₁) were observed at energies below the 4f ⁿ -4f ^{n ? 1}5d absorption threshold of impurity ions. Weaker absorption bands (denoted as CT₂) with energies 1.5–2 eV lower than those of the CT₁ bands have been found in the spectra of CaF₂ and SrF₂ crystals with EuF₃ or YbF₃ impurities. The fine structure of the luminescence spectra of CaF₂ crystals with EuF₃ impurities has been investigated under excitation in the CT bands. Under excitation in the CT₁ band, several Eu centers were observed in the following luminescence spectra: C _4v , O _h , and R aggregates. Excitation in the CT₂ bands revealed luminescence of only C _4v defects.     

Two-step photoconductivity in LiY<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Lu<Subscript>1 – <Emphasis Type="Italic">x</Emphasis> </Subscript>F<Subscript>4</Subscript>:Ce,Yb crystals

Photoconductivity of LiY_xLu_1–xF₄:Ce,Yb (x = 0–1) crystals is measured under one- and two-step excitation. It is established that the photoconductivity is due to intra-center transitions from excited states of Ce³⁺ ions. The position of the ground 4 f-state of Ce³⁺ ion relative to the bottom of the conduction band is determined. The choice of pumping conditions to obtain the lasing on the 5d–4f transitions of trivalent cerium in these active media is substantiated.     

Electronic excitation energy transfer and nonstationary processes in KH<Subscript>2</Subscript>PO<Subscript>4</Subscript>:Tl crystals

We report the results of our experimental study and numerical simulation of the electronic excitation energy transfer to impurity centers under conditions where nonstationary processes take place in the hydrogen sublattice of potassium dihydrogen phosphate (KH₂PO₄) single crystals doped with mercury-like Tl⁺ ions (KDP:Tl). We present the experimental results of our investigation of the decay kinetics of the transient optical absorption (100 ns–50 s) of intrinsic defects in the hydrogen sublattice of KDP:Tl obtained by pulsed absorption spectroscopy and the results of our study of the dynamics of the change in steady-state luminescence intensity with irradiation time (1–5000 s). To explain the transfer of the energy being released during electron recombination involving intrinsic KDP:Tl lattice defects, we formulate a mathematical model for the transfer of this energy to impurity Tl⁺ luminescence centers. Within the model being developed, we present the systems of differential balance equations describing the nonstationary processes in the electron subsystem and the hydrogen sublattice; provide a technique for calculating the pair correlation functions Y(r, t) of dissimilar defects based on the solution of the Smoluchowski equation for the system of mobile hydrogen sublattice defects; calculate the time-dependent reaction rate constants K(t) for various experimental conditions; and outline the peculiarities and results of the model parametrization based on our experimental data. Based on our investigation, the dramatic and significant effect of a gradual inertial increase by a factor of 50–100 in steady-state luminescence intensity in the 4.5-eV band in KDP:Tl crystals due to the luminescence of mercury-like Tl⁺ ions has been explained qualitatively and quantitatively.     

Photoluminescence of Ca(Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>S<Subscript>4</Subscript>:Eu<Superscript>2+</Superscript> compounds

Photoluminescence (PL) observed in solid solutions of Ca(Al _x Ga_1–x )₂S₄:Eu²⁺ (x = 0.1–0.3) is studied. It is shown that the increase in emission intensity by 18% is caused by changes in the x values and electronic 5d → 4 f transitions in Eu²⁺ ions. A change in the position of the emission spectrum or its partial shift toward shorter wavelengths is due to an increase in the aluminum concentration and a decrease in the crystal field energy. The energy of the zero phonon line E ₀, redshift D, and the Stokes shift ΔS are determined. A decrease in the photoluminescence intensity maximum and an increase in the half-width of the spectrum are found in the temperature range of 10–300 K. The efficiency of emission at temperatures of 20 and 300 K is almost independent of the excitation power density of up to ~10⁴ W/cm². The luminescence lifetime of Eu²⁺ ions was 383, 357, 346, and 333 ns for x = 0, 0.1, 0.2, and 0.3, respectively.     

Magneto-optical spectroscopy and optical detection of EPR spectra of Yb<Superscript>3+</Superscript> paramagnetic centers with cubic symmetry in single crystals <Emphasis Type="Italic">Me</Emphasis>F<Subscript>2</Subscript> (<Emphasis Type="Italic">Me</Emphasis> = Cd,Ca, Pb)

Cubic paramagnetic centers formed by Yb³⁺ impurity ions in fluorite-type crystals MeF₂ (Me = Cd, Ca, Pb) have been investigated using electron paramagnetic resonance, magnetic circular dichroism, magnetic circular polarization of luminescence, Zeeman splitting of optical absorption and luminescence lines, and optical detection of electron paramagnetic resonance. The g factors of the ²Γ₇ state in the excited multiplet ² F _5/2 of Yb³⁺ ions in Me F₂ crystals, the hyperfine interaction constant ¹⁷¹ A (¹⁷¹Yb) for the excited multiplet ² F _5/2 in the CaF₂ crystal, and the energies and symmetry properties of all energy levels of Yb³⁺ ions in MeF₂ crystals are determined. The crystal-field parameters for the crystals under investigation are calculated.     

Changes in the photoluminescence spectrum near twin boundaries in ZnTe crystals produced by rapid crystallization

{111} ZnTe crystals with various densities of twin boundaries in the growth direction were produced at ～670°C by the chemical vapor deposition method with the vapor environment offset toward an excess of Zn. Defects are formed in conical crystallites (up to 5 mm in height and with lateral dimensions of 10–500 μm at the bottom and up to 2 mm at the top) due to instabilities in the crystallization front, which arise because of convection-type heat and mass exchange in the oversaturated vapor medium. The influence of twin boundaries on the distribution of chemical impurities and the electronic spectrum of ZnTe was studied using x-ray diffractometry, scanning electron microscopy, and low-temperature photoluminescence (PL). It is found that rapid low-temperature growth of [111] ZnTe polycrystals from the vapor phase with an excessive Zn content favors the intensive formation of rotation and reflection twins. The incoherent [111] boundary of reflection twins is conductive to the separation and accumulation of impurities. In the regions of a crystal with a high density of reflection twins, exciton-impurity complexes (I _C , I _X ) and a Y strip, which is usually related to extended defects (dislocations, twins, crystallite boundaries), are found in the low-temperature PL spectra. Additional studies show that I _X is related to excitons trapped by neutral isoelectronic or charged defects and that I _C is probably due to an impurity of group IV of the Periodic Table.     

Scintillation neutron detectors based on <Superscript>6</Superscript>Li-silica glass doped with cerium

The photoluminescence (PL), PL excitation, and PL decay kinetics of ⁶Li₂O-MgO-SiO₂-Ce glasses were studied using time-resolved VUV spectroscopy. The Ce³⁺ ion PL excitation spectrum contains a known group of structural bands at 4.4–5.2 eV caused by 4f → 5d transitions. Moreover, features at 6.4–7.7 eV were detected and their nature is discussed. At an exciting photon energy E_exc > 25 eV, the photon multiplication effect manifests itself. Based on ⁶Li-silica glasses, a scintillation neutron detector with improved parameters was developed and produced.     

Nonequilibrium energy of Rayleigh waves in half-limited crystals with hot electrons close to the defect surface

Nonequilibrium energies of surface (Rayleigh) lattice oscillations in half-limited crystals with static defects and a two-dimensional layer of hot Fermi and Boltzmann electrons close to the stress free surface were calculated. Substances with electrons heated by an external field retaining their intrinsic temperature for a certain time, T _e ? T, where T is the temperature of the lattice, were considered. As shown earlier, the thermodynamic characteristics of thin films can then be determined by nonequilibrium energy of Rayleigh waves (R-phonons) caused by their interaction with hot electrons. This energy decreases as the widths of the energy spectrum of R-phonons increase. In this work, the earlier calculated spectrum widths are used. These widths are caused by the scattering of R-phonons by electrons and static defects close to the surface (point and extended surface defects, edge dislocations perpendicular to the surface and emerging to it, and random lattice grooves in the lattice plane). In all the calculations, the Keldysh diagram technique transformed for half-limited media was used.     

Location of the energy levels of the rare-earth ions in BaF<Subscript>2</Subscript> and CdF<Subscript>2</Subscript>

The location of the energy levels of rare-earth (RE) elements in the energy band diagram of BaF₂ and CdF₂ crystals is determined. The role of RE ³⁺ and RE ²⁺ ions in the capture of charge carriers, luminescence, and the formation of radiation defects is evaluated. It is shown that the substantial difference in the luminescence properties of BaF₂: RE and CdF₂: RE is associated with the location of the excited energy levels in the band diagram of the crystals.     

Intrinsic ultraviolet luminescence of LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> single crystals under inner-shell excitation

Ultraviolet photoluminescence (PL) of LiB₃O₅ (LBO) crystals has been studied under selective excitation by photons in the vacuum ultraviolet and ultrasoft x-ray regions, including the K-absorption edges of the Li and B cations and O anion. Radiative recombination of electron-hole pairs was established to be the main channel of the intrinsic PL excitation at 4.2 eV. Features were observed in the PL excitation spectra near the lithium and boron K-absorption edges originating from excitation of the cation 1s core excitons. Experimental evidence of the multiplication of Li 1s excitons in LBO was obtained. It is shown that excitation of the O 1s core excitons does not affect the PL yield noticeably. The differences in the appearance of the Li, B, and O 1s excitons in the excitation spectra of the LBO ultraviolet PL are discussed.     

Photodielectric effect and “Configuration” modes of bistable centers in the CdF<Subscript>2</Subscript>: Ga crystal

A photoinduced increase in the real (?′) and imaginary (?″) parts of the permittivity (Δ?′ ≈ 0.23 and Δ?″ ≈ 0.10 at a frequency of 15 cm^?1) is revealed experimentally. This photodielectric effect is adequately described by the predicted configuration modes at the frequencies gv ₁ = 354 cm^?1 and gv ₂ = 123 cm^?1, which correspond to the potential-energy curves previously calculated for deep and shallow impurity states in CdF₂: Ga crystals. The dielectric contributions of these modes are determined, and the corresponding concentrations of Ga ions in deep (N ₁) and shallow (N ₂) impurity states are calculated. It is found that, unlike the CdF₂: In crystals, the changes in the quantities ?′ and ?″ before and after illumination of the CdF₂: Ga crystals are predominantly determined by the change in the contribution from the configuration mode of the shallow state, because the contribution from the configuration mode of the deep state is very small. A photoinduced decrease in the lattice reflection in the CdF₂: Ga crystals due to the change in the dielectric contribution from the impurity mode of the lattice is predicted.     

Spectra of optical absorption and energy levels diagram of Er<Superscript>3+</Superscript> ions in bulk crystals of aluminum nitride

The absorption spectra of the Er³⁺ ions embedded in the AlN matrix have been investigated. The admixture of erbium was introduced in bulk AlN crystals by diffusion. The absorption lines, which are associated with the intraconfigurational electronic f–f-transitions from the ground ⁴ I _15/2-state to the levels of ion Er³⁺ excited states have been observed in the spectral range of 370–700 nm. The transitions to the state levels ⁴ F _9/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2, ² H _9/2, and ⁴ G _11/2 have been investigated in detail at the temperature T = 2 K. The number of the observed lines for these transitions coincides with the theoretically possible one for the electronic f–f-transitions in the ions Er³⁺, which are in the crystal field with the symmetry below cubic. The narrowness of the observed lines and their number convincingly testify the replacement of preferably one regular crystalline position by erbium ions. The implementation of Er³⁺ in the Al³⁺ position with the local symmetry C _3v appears the most probable. The energy positions of the levels of excited states for the investigated transitions have been determined. The diagram of the Er³⁺ ion energy levels in the AlN crystals has been built.     

Specific features of absorption and luminescence in CsBr: EuOBr crystals

The specific features of the absorption, photoluminescence, x-ray luminescence, thermally stimulated luminescence, and photostimulated luminescence spectra of CsBr: Eu²⁺ single crystals grown using the Bridgman method are investigated in the temperature range 80–500 K at the highest possible dopant content (0.1–0.4 mol % EuOBr in the batch) required for preparing perfect crystals. It is shown that an increase in the dopant content leads to a broadening of the absorption and photoluminescence excitation bands with maxima at wavelengths of 250 and 350 nm due to the interconfigurational transitions 4f⁷(⁸S_7/2) → 4f⁶5d(e _g , t_2g) in Eu²⁺ ions. The photoluminescence and photostimulated luminescence spectra of CsBr: EuOBr single crystals (0.1–0.4 mol % EuOBr) contain a band at a wavelength of λ_max=450 nm and bands at wavelengths of λ_max=508–523 and 436 nm. The last two bands are assigned to Eu²⁺-V_Cs isolated dipole centers and Eu²⁺-containing aggregate centers, respectively. It is revealed that the intensity of the luminescence associated with the aggregate centers (λ_max=508–523 nm) is maximum at an EuOBr content of less than or equal to 0.1 mol % and decreases with an increase in the dopant content. The possibility of forming CsEuBr₃-type nanocrystals that are responsible for the green luminescence observed at a wavelength λ_max=508–523 nm in CsBr: Eu crystals is discussed. The intensity of photostimulated luminescence in the CsBr: EuOBr crystals irradiated with x-ray photons is found to increase as the dopant content increases. It is demonstrated that CsBr: EuOBr crystals at a dopant content in the range 0.3–0.4 mol % can be used as x-ray storage phosphors for visualizing x-ray images with high spatial resolution.