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根据EAST-NBI大面积束引出系统的特点及装配要求,研究合理的装配方法.通过多种装配方法来消除装配中产生的误差,以到达最大误差小于0.05mm,真空接口漏率小于1 × 10-7Pa·L·s-1,冷却水管耐压1 MPa,通过100kV的静电耐压测试,并进行了离子束引出,初步验证了引出系统装配的成功,支持兆瓦级强流离子源的研制.     

高能强流负离子束系统束光学特性的数值模拟

基于负离于-中性束注入器中强流负离子束引出与加速系统的特点所建立的数值模拟模型和计算程序,通过数值模拟研究了强流负离子束系统电磁场位形、几何参数、等离子体参数、束流密度和负离子剥离损失对负离子束光学特性的影响。对8电极800keV强流负离子束系统的初步优化结果表明对引出流密度为2lmA·cm-2的H-离子束,当负离子初始温度为0.2eV时,由系统出射的85％束散角可达到0.23°。     

强流离子源的发展

本文简略评述了强流离子源及其引出系统离子光学的发展。     

ECR离子源束流引出与传输的研究

针对ECR离子源的束流引出及传输研究，在中国科学院近代物理研究所的LECR3离子源实验平台上开展了大量的实验. 实验中研究了等离子体电极引出孔径、反射电极(抑制电极)偏压以及Glaser透镜等因素对束流引出与传输的影响. 研究的重点是试图通过系列实验与分析来研究如何能更有效地引出强流离子束流并减小其在传输空间的损失. 给出了实验的主要结果，结合这些数据对ECR离子源的束流引出与传输进行了较全面的分析，并综合这些实验结果与分析结果得出了该物理过程的一般物理图像.     

强流离子源光腔衰荡光谱应用研究

强流离子源是托卡马克中性束注入器的核心部件,为了满足未来对高能量离子束中性化效率的要求,负离子源成为中性束注入系统的首选。光腔衰荡光谱(cavity ring-down spectroscopy,CRDS)是一种超高灵敏探测吸收光谱技术。在强流负离子源中,利用氢负离子的光致剥离过程,CRDS可以用来测量氢负离子的绝对积分密度。与激光光致剥离法与光学发射光谱法相比,CRDS具有不受电磁干扰、不依赖等离子体参数、测量精度高等优点。强流离子源负离子密度测量所用CRDS系统由激光器、光学谐振腔、光电探测器和数据采集系统四部分组成。本文根据CRDS测量氢负离子密度的原理,详细推导了氢负离子密度的计算方法,给出了氢负离子密度测算表达式;然后,结合强流离子源实验室应用的具体情况,分析了各部分装置的选择原则与注意事项;最后,介绍了CRDS技术在德国马克斯-普朗克等离子体物理研究所、日本国立聚变科学研究所、意大利Consorzio RFX研究所强流负离子源研究中的应用情况。实验结果表明,源腔气压、源功率等源参数会影响氢负离子密度;铯的注入可以将氢负离子密度从1016 m-3量级提高到1017 m-3量级;同时,日本NIFS的实验结果证明氢负离子密度与引出电流呈线性关系。     

电扫描型单缝单丝强流离子束发射度测量仪

 介绍了一台基于电偏转扫描方法的强流离子束发射度仪，讨论了发射度仪硬件的系统构成和设计要点，该发射度仪采用阶梯型电压对通过前缝的束流进行扫描来获得束流散角信息。并对测量计算软件和数据处理方法进行了介绍，采用了先扣除本底，再设置阈值的方法进行数据处理。处理后的数据利用程序可获得均方根和边界发射度、束斑大小、最大正负散角以及发射度相图。利用该发射度仪对ECR离子源引出的强流质子束的发射度进行了测量，并对测量数据进行了分析。对于引出电压为50 kV、脉冲重复频率为166 Hz、脉冲宽度为1 ms、平均束流强度为4 mA的质子脉冲束，其归一化均方根发射度为0.27 pmm·mrad。     

等离子体离子源发射面的理论计算与数值模拟

 等离子体离子源发射面的位置和形状决定了离子束的传输特性,而发射面的位置与形状又取决于等离子体参数、引出电压、电极结构等,并自动地调节到某个平衡状态。介绍了一种2维情况下等离子体离子源发射面的位置与形状的理论计算方法,即非磁化等离子体不能扩散进入外加电场中大于一定临界值的区域,等离子体离子源发射面的位置及形状可以通过直接求解引出系统的Laplace方程而得到。利用基于PIC的OOPIC程序对不同引出结构的发射面位置及形状和引出束流进行了数值模拟,结果与理论计算的结果十分接近。     

10cm双潘宁型离子源的整治与调试

双潘宁放电型离子源是用于受控核聚变研究装置的主要强流离子源型之一。这个由TFR装置退役、又在运输过程中严重受损的10cm双潘宁型离子源,经我们重新整治恢复之后,经调试已达到的主要结果是,引出的氢离子束的流强为10.2A,离子能量为30keV,束脉冲宽度100ms,束散角1.6°,离子源弧效率约0.65A/kW。结果表明,该源已基本达到国外同类型源在相近能量下的运行水平。     

低能辐照离子源设计及性能

简要介绍了低能辐照离子源的设计及性能。采用热阴极磁约束ＰＩＧ放电,并用两极多孔加减速系统引出离子束。调试结果：离子束能量在２００－２０００ｅＶ范围内可调,最大引出束流１５０ｍＡ,灯丝工作寿命１６０ｈ。     

低能辐照离子源的设计及性能

简要介绍了低能辐照离子源的设计及性能。采用热阴极磁约束ＰＩＧ放电，并用两极多孔加减速系统引出离子束。调试结果：离子束能量在２００－２０００ｅＶ范围内可调，最大引出速流１５０ｍＡ，灯丝工作寿命１６０ｈ。     

宽束冷阴极和部端霍尔离子源对薄膜透过率和应力影响的比较

在宽束冷阴极离子源和端部霍尔离子源辅助沉积情况下，利用南光ZZS700 1/G箱式镀膜机，通过实验分别验证了这两种离子束辅助沉积对光学膜层透过率和应力的影响。通过对大量实验数据进行分析，得出利用低能量和大电流离子束辅助沉积光学薄膜时，膜层性能优于高能量离子束辅助沉积膜层。分析了膜层特性改变的原因，并提出了合理的工艺参数。实验结果表明，低能量、大电流的离子束辅助沉积使光学薄膜的性能更佳。     

Broad Beam Gas Ion Source with Hollow Cathode Discharge and Four-grid Accelerator System

1 Introduction Ion sources with wide energy and current ranges are used extensively in industrial applications such as ion implantation, etching, and deposition. Broad beam ion sources with a uniform current distributions are needed for many industrial applications and development of commercial ion bean technologies for surface modification of materials is impossible without highly efficient, simple, and dependable ion sources. These and other needs have spurred the development of high efficiency ion sources that can produce ion beams with high energy and current and require low or no maintenance.     

Miniature electron bombardment evaporation source: evaporation rate measurement

Miniature electron beam evaporation sources which operate on the principle of vaporization of source material, in the form of a tip, by electron bombardment are produced by several companies specialised in UHV equipment. These sources are used primarily for materials that are normally difficult to deposit due to their high evaporation temperature. They are appropriate for special applications, like heteroepitaxial thin films growth that require very low and well controlled deposition rate. We propose a simple and easily applicable method of evaporation rate control. The method is based on the measurement of ion current produced by electron bombardment of evaporated atoms. In order to be able to determine the ion current – evaporation flux calibration curves we measured the absolute values of evaporation flux by means of Bayard-Alpert ion gauge.     

Laser ion beam formation for nanotechnologies

It is suggested to generate cold ion beams by laser collimation and subsequent laser ionization of a primary atomic beam. The primary beam, formed by a standard method, is collimated through transverse cooling by resonance laser radiation. Laser radiation is also used for the multistep ionization of atoms in the collimated beam. Advantages of the proposed method are a low scatter of the initial ion energy (below 10^?1 eV) and a high emittance in the region of the virtual source (～10^?6 cm rad at a beam current on the level of microamperes). The high monochromaticity of the obtained ion beam allows the chromatic aberration effect to be significantly suppressed, which implies good prospects for using such sources in ion beam lithography. The proposed method also allows the spectrum of elements used in ion beam sources to be expanded, which is an independent technological advantage.     

Effect of implantation regimes of silver ions on the structure and optical properties of zinc-oxide nanocrystalline films

Thin (about 270 nm) nanocrystalline films of zinc oxide (ZnO) are obtained on quartz substrates using ion sputtering and irradiated with Ag⁺ ions at an energy of 30 keV and relatively high fluences at ion current densities of 4, 8, and 12 µA/cm². The X-ray analysis, scanning electron microscopy, and optical spectroscopy are used to study the effect of irradiation dose and ion current density on the structural modification and optical properties of the ZnO films. Nontrivial dependences of the structural and optical parameters of the films on the ion irradiation regimes are due to radiation heating and film sputtering under the action of the ion beam, diffusion of impurity, formation of silver nanoparticles in the irradiated layer at high implantation fluences, and the diffusion of implanted impurity at relatively high ion current densities.     

低气压条件下的铁电体离子发射特性研究

以低气压条件下的铁电体离子发射特性为研究对象,通过结合高速相机、光谱的光学诊断和二维网格质点法耦合蒙特卡洛碰撞模型(PIC-MCC)的仿真模拟获得了锆钛酸铅(PZT)铁电体离子发射的主要成分、表面放电的发光及等离子体演化过程、离子的产生及离子电流形成机制,为进一步研究铁电体离子源奠定了基础。     

Cathode-lifetime and stability problems in arc-dischargetype heavy ion sources

The last few years have seen ion implantation become a widely used industrial method. This has resulted in increasing importance being attached to the reliability of implanters and to a satisfactory working time/maintenance relation and other factors which are in some way connected with reproducibility and homogeneity. With these viewpoints in mind, ion sources seem to be the most sensitive components of implanters. Besides the normal ion source operations such as changing feeding material or gas, etc., ion sources need care in the maintenance. Ion source lifetime and reliability problems are of special consequence in the case of heavy-current machines. The excellent, mechanically scanned target chambers have made possible the use of higher and higher currents, but at the same time these currents can cause lifetime problems which affect the profit of expensive high current machines.     

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Characteristics of ion emission from the ferroelectric media was investigated under low pressure condition. By utilizing high-speed camera photography, spectral analysis, and particle-in-cell simulation coupling with Monte Carlo collision, the optical emission composition and images from ferroelectric surface, plasma evolution of ferroelectric surface discharge, the mechanism of ion generation and the forming of ion current are discussed. These results are useful for further understanding to ferroelectric ion sources.     

光子学太赫兹源研究进展

为了进一步开发、利用高功率、高效率、可调谐且在室温下稳定运转的太赫兹(THz)源,介绍、分析了国内外利用光子技术产生THz波的研究进展,包括THz气体激光器、空气等离子体THz源、光电导天线以及基于非线性光学效应的光学整流、光学差频、参量振荡等THz源,并指出了光子学THz源未来发展所面临的困难和需要解决的关键技术。     

光学薄膜抗激光损伤研究发展

随着大能量/高功率激光器的发展需求日益突出,光学薄膜的激光损伤阈值逐步成为激光器发展的瓶颈,受到国内外高能激光器研究领域的广泛关注。阐述了光学薄膜激光的损伤机理、激光损伤阈值测试平台及方法,结合自身研究成果,综述性分析了国内外光学薄膜抗激光损伤技术与手段研究的发展情况,主要包括离子束预处理、离子束与退火后处理、虚设保护层等;重点提出了磁过滤结合激光沉积的复合沉积技术,并建议加速推动无缺陷沉积的原子层沉积技术,为大幅提高光学薄膜抗激光损伤能力、满足当前需求提供了理论基础。