SrTiO3基片上Tl-2212双晶约瑟夫森结的动态特性及噪声影响研究

在SrTiO₃（STO）基片上制作了Tl-2212双晶约瑟夫森结,并对其进行了微波辐照下的I-V特性测试,观察到了夏皮罗台阶,符合约瑟夫森电压-频率关系.利用数值仿真对约瑟夫森结建立了RCSJ模型,仿真结果与实验数据符合较好,利用此模型深入研究了噪声对结动态特性的影响,解释了噪声影响下结的微波感应台阶幅度减小和极小值展宽现象,提出了有效噪声温度为工作温度和外部噪声的等效温度之和. 关键词： RCSJ模型 噪声 Tl-2212双晶约瑟夫森结     

用于HTc rf SQUID的新型超导共面谐振器

在10mm*10mm*1mm的LaAlO3基片上设计和制成了一种新结构的800MHz超导共面谐振器,它可以和外尺寸9mm*9mm的垫片式rfSQUID器件实现有效的耦合,对于使用超导共面谐振器的rf SQUID,该方案为提高器件有效面积和磁场灵敏度提供了新的方法.     

光纤中热力学本征涨落相位噪声

根据涨落的热力学理论,详细分析和计算光纤中热力学本征涨落相位噪声的方均值。讨论它对光纤干涉仪的影响,把热力学本征涨落噪声和热力学本征驻波噪声进行比较     

本征约瑟夫森结阵列的PSpice模型及混沌行为研究

建立了电容耦合本征约瑟夫森结阵列在电路仿真软件PSpice中的模型，利用这个模型对恒定电流驱动下的本征约瑟夫森结阵列进行了仿真研究.通过与不存在电容耦合的本征约瑟夫森结的时域波形、频谱、分维和相图等结果的对比，发现了本征约瑟夫森结阵列中的混沌行为.这一发现对于本征约瑟夫森结的理论和应用研究有重要的意义.     

外场与介观约瑟夫森结相互作用的不变本征算符法研究

本文首先详细介绍了场与介观约瑟夫森结相互作用系统的哈密顿量,进一步讨论了系统的量子化方案,然后简要介绍了不变本征算符法及其基本应用.在此基础上,用不变本征算符法求得外场与介观约瑟夫森结相互作用系统的能级间隔.     

Tl-2212本征约瑟夫森结型负阻器件及负阻放大器

我们利用Tl-2212超导薄膜制作出了的本征约瑟夫森结型负阻器件.对于4 μm长3 μm宽的微桥型负阻器件,峰值电压为0.09V,峰值电流为1.44mA,谷值电压为0.75V,谷值电流为1.05mA,线性区间内负阻阻值约为-1400Ω.利用这种器件,制作了简单的负阻并联式电流放大器.实验证明它确实对信号具有电流放大作用,放大倍数可以通过改变负载电阻的大小来改变.     

本征Josephson单结的电流-电压特性

采用光刻蚀和Ar离子刻蚀技术成功地在Bi-2212单晶表面制备出台阶型本征Josephson单个结,并在5～65K范围内用四引线法测量了该结零场下的I～V特征曲线.结果表明,临界电流几乎保持不变,但返回电流随温度增加而增大;与此同时,Mccumber参数βc随着温度增加而减小.临界温度附近,跳跃电压ΔV明显偏离BCS理论.     

本征Josephson结的表面结的特性研究

在用Bi2Sr2CaCu2O8 δ(BSCCO)单晶制备本征结时,最上面的Cu-O层由于受到所沉积的金属层的影响,其超导性能将发生退化,从而使得表面上两个邻近的Cu-O层形成的表面结具有不同于内部本征结的性质.我们对表面结的I～V、Ic'～T、R～T等电运输特性进行了分析和研究,发现表面结的临界温度Tc通常都比较低,而且临界电流随温度的变化关系也不同于正常本征结.并且利用旁路电阻的方法,成功观察到了被旁路后表面结的ac Josephson效应.     

基于高温超导本征约瑟夫森效应的新型两端恒流器件

我们利用高温超导本征约瑟夫森效应,研制了一种超导薄膜两端恒流器件.恒流器件是将生长在斜切20度LaAlO3基片上的Tl-2212超导薄膜光刻成微桥得到的.对于6μm×8μm的微桥器件,其最高工作电压可达15V以上,当两端电压在1V～11V之间变化时,电流基本稳定在4.3mA,误差不超过±5%,动态内阻大于104 Ω,在最佳工作位置(3V～8V)动态内阻可以达到105 Ω.通过数字模拟,对实际应用中两端恒流器件的rf调制进行了较详细的分析,并可使恒定电流上rf调制小于1%.     

基于高温超导单晶材料的大尺寸约瑟夫森本征结制备工艺研究

基于高温超导单晶材料Bi2Sr2CaCu2O8+x(BSCCO)的约瑟夫森(Josephson)本征结器件制备工艺,成功制备出形貌整齐、特性良好、一致性高的大尺寸太赫兹辐射源本征结器件.从工艺的各个步骤出发,总结了要点,并对原有工艺做出改进.通过扫描电子显微镜观察刻蚀形貌,总结了光刻最佳后烘温度条件,提出了一套重复性好、成功率高的工艺方法.     

Basic properties of an rf SQUID involving two Josephson junctions connected in series

We have studied the basic characteristics of a radio frequency superconducting quantum interference device (rf SQUID) involving two Josephson junctions connected in series, the case for the widely used grain boundary junction (GBJ) rf SQUID. It is found that the SQUID properties are determined mainly by the weaker junction when the critical current of the weaker junction is much lower than that of the other junction. Otherwise, the effect of the other junction is not negligible. We also find that only when the hysteresis parameter β is less than 1-α, where α is the critical current ratio of the two junctions, will the SQUID operate in the nonhysteretic mode.     

低噪声HT_c rf SQUID芯片可控制备的实验研究

针对低内禀噪声要求条件下HTcrf SQUID芯片制备成品率和优质率低等问题,通过对YBCO薄膜的PLD制备工艺参数及所制作的YBCO薄膜性能与微观形貌的观测分析,提出晶界结构的非均匀和不一致性可能是影响低噪声台阶边沿型晶界结制备质量的观点,进而以淀积温度为典型控制参数设计了一组实验,对实验获取的YBCO薄膜和SQUID芯片的性能测试表明:YBCO薄膜生长的三高条件(高淀积温度、高氧分压和高激光能量密度)易造成薄膜表面平整度恶化和晶界构型的不均匀,而选择合适的淀积温度可有效提高SQUID芯片的噪声性能。     

Observation of scissors modes in solid state systems with a SQUID

The occurrence of scissors modes in crystals that have deformed ions in their unit cells was predicted some time ago. The theoretical value of their energy is rather uncertain, however, ranging between ten and a few tens of eV, with the corresponding widths of 10^?7 to 10^?6 eV. Their observation by resonance fluorescence experiments therefore requires a photon spectrometer covering a wide energy range with a very high resolving power. Here, a new experiment is proposed and discussed in which such difficulties are overcome by measuring with a superconducting quantum interference device (SQUID) the variation of the magnetic field associated with the excitation of scissors modes.     

色噪声驱动的双奇异随机系统的熵流与熵产生

讨论一类 (非平衡约束下) 高斯色噪声驱动的双奇异随机系统对应的Fokker-Planck方程，结合Shannon信息熵定义给出此类系统的熵流、熵产生随时间演化的精确表达式.分析(非平衡约束下)所引入的奇异性强度参数、噪声相关时间与耗散参数的相互作用以及对熵流、熵产生的显著影响. 关键词： 信息熵 熵流与熵产生 双奇异随机系统 高斯色噪声     

Electron flux distributions in photodetachment of HF~- near an interface: Theoretical imaging method study

The electron flux distributions in the photodetachment of HF- near an interface are studied using a two-center model and the theoretical imaging method. An analytical expression for electron flux distributions is derived, which displays oscillations on an observation plane similar to the recent results published by Wang but in the presence of a static electric field. We also discuss the expressions for soft and hard wall cases in detail. A comparison is made with the previous work. The expression is a more general result, and we can deduce from it the electron flux distributions for the photodetachment of H2- near an interface. Finally, we show that the expression reveals similar results as those in [Chin. Phys. B 19 020306 (2010)] when the wall effect is neglected.     

模型化研究两细胞间基因、蛋白耦合振荡中的噪声效应

本文基于Hill动力学与Michaelis-Menten方程,建立理论模型研究两细胞间基因、蛋白耦合振荡中的噪声效应.研究发现,在Notch信号通路中,两细胞间基因、蛋白耦合振荡呈现了周期振荡特性,表明了细胞间信号传导的同步振荡特性.“内在”噪声和“外在”噪声对两细胞间基因、蛋白耦合振荡有着不同的作用.内噪声有利于细胞间Notch信号通路中各基因、蛋白表达再次提升.外噪声诱导通路中基因、蛋白的表达水平降低,周期振荡变得阻尼.内、外噪声共同作用不仅可使得基因表达适当并呈现出持续振荡模式,而且还可使得细胞间基因转录合成相应的蛋白过程呈现出持续振荡模式.从而表明了基因表达的内、外噪声共同作用有利于控制细胞间基因激活、蛋白合成保持周期节律性.本文理论结果揭示了内外噪声对细胞间Notch信号通路动力学的一种调控机制,确定了内外噪声各自的调控效应,澄清了内外噪声共同作用调控体系持续周期振荡的物理机制,理论结果符合实验,可为设计阻止Notch体系基因、蛋白变异导致的多种疾病和癌症的通路治疗方案提供理论依据.     

Frequency dependence of the photonic noise spectrum in an absorbing or amplifying diffusive medium

A theory is presented for the frequency dependence of the power spectrum of photon current fluctuations originating from a disordered medium. Both the cases of an absorbing medium (“grey body”) and of an amplifying medium (“random laser”) are considered in a waveguide geometry. The semiclassical approach (based on a Boltzmann-Langevin equation) is shown to be in complete agreement with a fully quantum mechanical theory, provided that the effects of wave localization can be neglected. The width of the peak in the power spectrum around zero frequency is much smaller than the inverse coherence time, characteristic for black-body radiation. Simple expressions for the shape of this peak are obtained, in the absorbing case, for waveguide lengths large compared to the absorption length, and, in the amplifying case, close to the laser threshold. Received 8 August 2000