Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Ion beam mixing and sputtering of Kr-irradiated TiN films measured with RBS,RNRA, and PIXE

Thin titanium nitride films of 10–300 nm thickness were irradiated with ⁸⁴Kr ions of 80–700 keV energy and fluences ranging from 10¹⁶ cm² to 2×10¹⁷ cm². Sputter yields (Y=0.4–1.0) and mixing rates (k=0.05–0.5 nm⁴) were determined using the depth profiling methods RBS, RNRA, and PIXE. While the sputter yields agree well with the modified Sigmund theory, the energy dependence of the mixing rates cannot be explained by standard models.     

Rapid crystallization of silicon films using Joule heating of metal films

50-nm thick amorphous silicon films formed on glass substrates were crystallized by rapid Joule heating induced by an electrical current flowing in 100-nm-thick Cr strips formed adjacently to 200-nm-thick SiO₂ intermediate layers. 3-μs-pulsed voltages were applied to the Cr strips. Melting of the Cr strips caused a high Joule heating intensity of about 1×10⁶ W/cm². Raman scattering measurements revealed complete crystallization of the silicon films at a Joule heating energy of 1.9 J/cm² via the SiO₂ intermediate layer. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was also observed just beneath the edge of the Cr strips. The electrical conductivity increased from 10^-5 S/cm to 0.3 S/cm for 7×10¹⁷-cm^-3-phosphorus-doped silicon films because of activation of the phosphorus atoms because of crystallization. The numerical analysis showed a density of localized defect states at the mid gap of 8.0×10¹⁷ cm^-3. Oxygen plasma treatment at 250 °C and 100 W for 5 min reduced the density of the defect states to 2.7×10¹⁷ cm^-3. Received: 3 April 2001 / Accepted: 9 April 2001 / Published online: 25 July 2001     

In situ monitoring of laser-induced silicon oxidation

A low cost, computer-controlled, in situ monitor of laser-induced oxidation of c-Si is described. Both oxide thickness and processing temperature can be determined, simultaneously and with high spatial resolution, from the sample reflectivity and a knowledge of the temperature dependence of the optical constants of silicon and silicon dioxide (available in the literature).     

Model of laser-induced chemical etching of silicon in chlorine atmosphere

A mathematical model for the chemical etching of silicon in a chlorine atmosphere induced by laser irradiation is described. The model takes into account: dissociation of molecules having absorbed radiant energy into chlorine atoms and their diffusion onto the substrate surface, generation of photocarriers in the silicon substrate, kinetics of chlorine atom chemisorption on the silicon surface, chemical reaction of chemisorbed chlorine atoms with silicon atoms, and desorption of reaction products. The obtained results are compared with experimental data.     

Pulsed laser crystallization of hydrogen-free a-Si thin films for high-mobility poly-Si TFT fabrication

The possibility to fabricate high-mobility polysilicon TFTs by nanosecond pulsed laser crystallization of unhydrogenated amorphous Si thin films has been investigated. Two types of lasers have been used: a large area ( 1 cm²) single ArF excimer laser pulse and a small diameter ( 100 m) frequency-doubled Nd:YAG laser beam, working in the scanning regime. Processed films have been characterized in detail by different optical and microscopic techniques. Device performances indicate that the best results are achieved with the excimer laser leading to high mobility values (up to 140 cm²/Vs) which are much larger than in polysilicon TFTs fabricated onto the same quartz substrates by low-temperature thermal (630° C) crystallization of amorphous Si films (_fe55 cm²/Vs).     

Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing

Analytical electron microscopy, high-resolution X-ray diffraction and combined Rutherford backscattering spectrometry and channeling experiments have been used to investigate the radiation damage and the effect of post-implantation annealing on the microstructure of GaAs(100) single crystals implanted with 1.00 MeV Cu⁺ ions to a dose of ≈ 3×10¹⁶ cm^-2 at room temperature. The experiments reveal the formation of a thick and continuous amorphous layer in the as-implanted state. Annealing up to 600 °C for 60 min does not result in the complete recovery of the lattice order. The residual disorder in GaAs has been found to be mostly microtwins and stacking fault bundles. The redistribution of implanted atoms during annealing results in the formation of nano-sized Cu particles in the GaAs matrix. The X-ray diffraction result shows a cube-on-cube orientation of the Cu particles with the GaAs lattice. The depth distribution and size of the Cu particles have been determined from the experimental data. A tentative explanation for these results is presented. Received: 15 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Direct writing of gold lines by laser-induced chemical vapor deposition

Stripes of gold metal were deposited by focussing an Ar⁺ laser (514nm) onto glass substrates in a heated vacuum cell containing the evaporator and the precursor. MeAuPMe₃, Me₃AuPR₃ (R = Me,Et) were used as precursors. Using MeAuPMe₃ or Me₃AuPEt₃, deposits of high quality were obtained above 40° C and 60° C evaporator temperature, respectively. With Me₃AuPMe₃ the same deposits of gold stripes were possible near room temperature. The stripes were characterized by scanning profilometry, electrical resistivity, SEM and SAM measurements. In general, the stripe resistivity was between 1.5 and 7 times of the bulk metal.     

“Sputtered-atom assembly” of carbon nanostructures during ion bombardment

We report the observation of a carbon nanostructure grown on a graphite surface by Ar⁺ ion bombardment. We demonstrate experimentally that, in view of transmission electron microscopy (TEM)-based evidence, some of these carbon nanostructures emerged the whiskerlike protrusion and/or the sputtered-surface, suggesting a new growth model for nanocarbon, distinctly different from that found in arc-discharge and many other methods. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 13 July 2000     

Crown-like structure development on titanium exposed to multipulse Nd:YAG laser irradiation

We report micrometre-sized crown-like structure growth on a Ti surface by multipulse Nd:YAG (λ=1.064 μm,τ=170 ns) laser irradiation in air at atmospheric pressure. The irradiation was performed at 8×10⁷ W/cm² laser-pulse intensity, below the ablation threshold. A ring-shape structure develops in the centre of the irradiation spot after the action of five laser pulses. The further increase of the laser-pulse number leads gradually to a crown-like structure, which has, for 150 pulses, a height of 120–140 μm above the non-irradiated Ti surface. The forming crater’s depth does not exceed the height of the grown structure. In the neighbouring zone, after the action of 25 laser pulses, microcracks of the oxide surface layer develop. With the next pulses this leads to the formation of a surface microrelief. The crown-like-structure growth is originated by molten material movement attributed to the laser-induced plasma-recoil pressure. Received: 6 June 2001 / Accepted: 6 January 2002 / Published online: 26 March 2002     

Temperature gradients effects in low-power laser annealing of ion implantedα-Ge

The influence of temperature gradients in laser annealing of-Ge, obtained below the melting threshold, was tested by irradiating the samples with a linear fringe pattern from a pulsed ruby laser. The peak temperature reached on the specimen surface was calculated to be well below the melting threshold of the material. Temperature gradients are observed to enhance the crystallization process in the material. Spontaneous periodic structures, or ripples, having a period equal to the laser wavelength, are frequently observed in areas corresponding to minima of the fringe pattern.Gruppo Nazionale di Struttura della Materia     

Direct observation of infrared photoluminescence of spray-deposited CdS:In thin films

Infrared photoluminescence spectra (in the range 0.9-1.4 eV) of the as-deposited CdS:In thin films prepared by the spray pyrolysis technique were recorded at different laser powers and different film temperatures in the range 24-130 K. The spectra show an infrared band centred at 1.06 eV, which have a structure and asymmetry. The structure might be attributed to active defect states which are produced through the growth of the film and might be partially due to coupling to longitudinal phonon. Gaussian peaks were used to deconvolute the spectrum by using nonlinear square fit. The Gaussian peaks used in the fit are expected to fit the spectra taken at different laser powers and different temperatures. These results are discussed in view of the importance of CdS as a window layer for photovoltaic heterojunction solar cells.     

Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching

A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction of a chemical oxidant, which combined with UV illumination injects holes into the valence band, the holes subsequently participating in the oxidation and dissolution of the substrate. The etchant is composed of HF and K₂S₂O₈ in water. Various porous morphologies are presented as a function of etchant concentration, time of etching, and SiC polytype. Wafer quality is of the utmost concern when utilizing the electroless wet etchant, since defects such as stacking faults, dislocations, and micropipes have a large impact on the resulting porous structure. Results of imaging and spectroscopic characterization indicate that the porous morphologies produced in this manner should be useful in producing sensors and porous substrates for overgrowth of low dislocation density epitaxial material.     

Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

Formation of nano-hillocks by impact of swift heavy ions on thin films of TiO2

Amorphous thin films of TiO₂ are irradiated by swift heavy ion (SHI) beam. Surface topography is studied by atomic force microscopy (AFM). Formation of nanosized oblate hillocks on the surface of irradiated films is investigated by AFM studies. After irradiation, amorphous to crystalline phase transition is observed in glancing angle X-ray diffraction (GAXRD) and Raman spectroscopy studies. Photoluminescence (PL)-spectroscopy is carried out for optical characterization. Threshold value necessary for emergence of hillocks is estimated.     

Atomic scale characterization of nanostructured a-C:H films

Hydrogen incorporation in nanostructured carbon films grown by supersonic cluster beam deposition has been theoretically investigated by classical molecular dynamics. Simulations are shown to enlight the role of the local nanostructure on the formation of hydrogen-related complexes in different carbon environments. Received 23 January 2002 Published online 6 June 2002     

Non-destructive reading of laser-induced single-shot incubation in dielectric coatings

Two-dimensional photothermal displacement measurements were carried out on TiO₂, ZrO₂, and HfO₂ coatings to uncover single shot incubation produced by 248 nm laser light at fluences below the damage threshold. The incubation behavior of the three coatings differs and correlates with the ratio of band gap to photon energy. The non-destructive nature of the photothermal displacement technique, its high lateral resolution, and its sensitivity for reading single shot imprints by an excimer laser lends this scheme a capacity for use in optical storage.Alexander von Humboldt fellow 1991/92     

Theory for the laser-induced femtosecond phase transition of silicon and GaAS

We analyze he femtosecond instability of the chamond lattice of silicon and GaAs, which is induced by a dense electron-hole plasma after excitation by a very imense laser pulse. We obtain that the electron-hole plasma causes an instability of both transverse acoustic and longitudinal optical phonons. So, within less than 200fs, the atoms are displaced more than 1 Å from their equilibrium position. The gap between the conduction and the valence band then vanishes and the symmetries of the diamond structure are destroyed, which has important effects on the optical reflectivity and second-harmonic generation. After that, the crystal melts very rapidly because of the high kinetic energy of the atoms. Note that mis is in good agreement with recent experiments done on Shand GaAs using a pump laser to excite a dense electron hole plasma and a probe laser to observe the resulting changes in the atomic and electronic structure.Paper presented at the 129th WE-Heraeus-Seminar on Surface Studies by Nonlinear Laser Spectroscopies, Kassel, Germany, May 30 to June 1, 1994     

Inverse photopyroelectric detection of phase transitions

The inverse photopyroelectric (IPPE) configuration was used in order to detect ther antiferromagnetic-paramagnetic phase transition in Cr₂O₃. It was demonstrated both theoretically and experimentally that the IPPE scheme is able to detect phase transitions in the case when the pyroelectric sensor is thermally thin and optically opaque. The main advantage of this configuration, compared with the standard one, is the elimination of all the possible detection problems connected with the optical properties of the sample (transparency, thermal reflectance, etc.). For a thermally thin sample the amplitude of the IPPE signal depends only on the specimen specific heat, allowing its direct calculation. A similar direct calculation of the sample effusivity is possible sometimes in the thermally-thick limit.