A sensitive non-destructive method for measuring the Nd doping concentration in Nd : YAG with high spatial resolution

This paper reports on an experimental method for measuring in Nd:YAG the Nd doping concentration (C) with high sensitivity (0.01 at.%Nd) and high spatial resolution (50 m). The method is based on the measurement of the fluorescence lifetime _f of the upper Nd laser level. Additional parameters required to determine C are the intrinsic fluorescence lifetime ₀ and the quenching parameter Q. The measured values of _f, ₀ (256.47±0.14 s) and Q (4.45±0.40×10²⁰ cm^-3) allow us to calculate the Nd concentration C with an absolute accuracy of 0.1 at.%Nd. By using this method C is measured at the outer surfaces of standard laser rods and at the faces of boule slices (with diameters of up to 50 mm). The obtained results demonstrate a detection sensitivity of 0.01 at.%Nd. PACS 42.70.Hj; 81.70.Fy     

Generalized Transvectants-Rankin–Cohen Brackets

We introduce o(p+1q+1)-invariant bilinear differential operators on the space of tensor densities on Rⁿ generalizing the well-known bilinear sl₂-invariant differential operators in the one-dimensional case, called Transvectants or Rankin–Cohen brackets. We also consider already known linear o(p+1q+1)-invariant differential operators given by powers of the Laplacian.     

Electroless deposition of Ag on Pd-activated TiN/p-Si(100) substrate

Nano-thick Ag films were electrolessly deposited on TiN/p-Si(100) substrates. The substrates were prepared by sputtering TiN on p-Si(100) wafers. An activation process of the substrates was performed by immersing the substrates in a solution of 0.0019 moLL^-1PdCl₂+0.45 moLL^-1HF+8.7 moLL^-1aceticacid+0.036 moLL^-1 HCl so as to obtain the Pd seed layer. The general composition of the electroless Ag bath was 0.0032 moLL^-1AgNO₃+2.24 moLL^-1NH₃+0.56 moLL^-1aceticacid+0.1 moLL^-1 NH₂NH₂ at pH 10.2. The morphologies of the Pd seed layer and the Ag films were characterized by atomic force microscopy (AFM). The effect of the Pd activation on electroless Ag deposition was tested by open circuit potential with time technology (OCP-t). For comparison, the morphology of the films deposited by electrochemical deposition on the substrates was also studied by AFM. PACS 82.45.Mp; 81.15.Pq; 81.10.Dn     

Mode-locking of neodymium lasers by glasses doped with PbS nanocrystals

Nonlinear optical absorption properties of silicate glasses doped by the PbS nanocrystals were investigated by means of the picosecond pump-probe absorption spectroscopy and absorption bleaching technique. The glass samples were used as saturable absorbers for passive mode-locking of Nd:YAG and Nd:glass lasers. Application of the PbS doped glass together with the active mode-locking and laser cavity quality control enabled the stable of generation of 28 ps and 5 ps duration pulses in Nd:YAG and Nd:glass lasers respectively. PACS 42.60.Fc; 42.70.Hj; 78.47.+p     

Influence of Hydrothermal Temperature on Structures and Photovoltaic Properties of SnO2 Nanoparticles

Two SnO₂ nanoparticles were synthesized by hydrothermal method at 170°C and 180°C, respectively. Transmission electron microscope observations reveal that the diameters of both the nanoparticles are around 6nm. At the same time, surface photovoltage spectroscopy measurements show that the nanoparticle synthesized at 180°C has more surface electronic states at 0.3eV below the conduction band than the one synthesized at 170°C. This means that the temperatures chosen in hydrothermal synthesis have significant influence on the surface electronic characteristics of resultant SnO² nanoparticles but the effect on their sizes is not obvious. However, after being calcined at 500°C for 2h, the diameter of the nanoparticle synthesized at 180°C increased to 23nm and that of the nanoparticle synthesized at 170°C increased to 32nm as calculated from X-ray diffraction pattern.     

Tunable single-frequency ultraviolet generation from a continuous-wave Ti : sapphire laser with an intracavity PPLN frequency doubler

We report a single-longitudinal-mode continuous-wave Ti:sapphire ring laser that is intracavity frequency doubled in periodically poled lithium niobate (PPLN). Using a multi-grating PPLN crystal, the second harmonic is tunable from 386 to 403 nm – close to the PPLN ultraviolet absorption edge – with a maximum generated power of 114 mW. The wavelength dependence of the critical operating temperature required to eliminate photorefractive effects in the PPLN crystal is determined. PACS 42.65.Ky; 42.70.Mp; 42.72.Bj     

Luminescent CdS Nanoparticles Embedded in Polyethylene Glycol (PEG 300) Matrix Thin Film

A simple method for synthesis of well dispersed cadmium sulphide (CdS) nanoparticles embedded in a polyethylene glycol matrix (PEG 300) in thin film form is presented. The molar ratio of PEG and CdS was varied within the range 70:30 to as high as 50:50. Films with controllable sizes (r 3 –8nm) of nanocrystals could be obtained by adjusting post-deposition annealing temperature (T) and time (t). The obtained films showed systematic variation in optical properties with decreasing crystal size due to quantum confinement. Transmission electron micrographs (TEM) indicated well resolved nanoparticles for films annealed at lower temperature (T = 373K) and time (t < 45 min). Photoluminescence (PL) studies indicated blue shift with decreasing particle size. The films did not degrade with aging in a humid atmosphere (relative humidity 40%) for several weeks.     

Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm

A diode-pumped Nd:YAG laser at 1123 nm is passively Q-switched by using a low doping concentration Cr⁴⁺:YAG crystal as a saturable absorber. When pumped by a 1.5-W laser diode, the laser produces pulses of 50-ns duration with a pulse energy of as much as 15 J and a peak power of 300 W at a pulse-repetition rate of 10 kHz. PACS 42.60.Gd; 42.55.Rz; 42.55.Xi     

Publisher's Note

When the article 'Modification of the finite difference scheme for efficient analysis of thin lossy metal layers in optical devices' by O. Conradi, S. Helfert, and R. Pregla was first published in the Optical Waveguide special issue of Optical and Quantum Electronics (volume 30, nos. 5–6, pages 369–373) the authors' affiliation given was incorrect. The article is printed again in full with the original pagination and credit lines. A misprint in the Results section has been corrected as well: the refractive index of both silver layers is 0.14–j11.0 at a wavelength of = 1523 nm, and not 0.41–j11.0.     

Experimental demonstration of a photonic-crystal-fiber optical diode

Two cascaded hollow-core photonic-crystal fibers with slightly shifted, but still overlapping, transmission peaks are shown to function as an optical diode for ultra-short laser pulses. Submicrojoule 100-fs Ti:sapphire laser pulses with a spectrum falling within the passband of one of the fibers, but outside the passband of the second fiber, experience spectral broadening due to self-phase modulation in the first fiber. A part of this self-phase-modulation-broadened spectrum is then transmitted through the second fiber. Identical short pulses propagating in the opposite direction are blocked by the second fiber with a shifted passband. A forward-to-backward signal ratio exceeding 40 is achieved with the created photonic-crystal fiber diode for 0.9-J, 100-fs pulses of 800-nm Ti:sapphire laser radiation. PACS 42.65.Wi; 42.81.Qb     

Microstructure and Chemical States of Hydroxyapatite/silk Fibroin Nanocomposites Synthesized via A Wet-mechanochemical Route

Hydroxyapaptite (HAp)/silk fibroin (SF) nanocomposites were prepared via a wet-mechanochemical route at room temperature. The results reveal that the inorganic phase in the composites is carbonate-substituted HAp containing 2.9–3.1 wt% of carbonate ions. The primary HAp crystals are rod-like in shape with a typical size of 20–30nm in length and 8–10nm in width, and lattice parameters a = 9.423, c = 6.888. The self-assembled HAp crystals along their c-axes aggregate into bundles, which are connected with SF fibrils. Consequently, a three-dimensional porous network is formed in the composite, which is beneficial to inducing new bone formation in practical implantation.     

Randomizing Quantum States: Constructions and Applications

The construction of a perfectly secure private quantum channel in dimension d is known to require 2logd shared random key bits between the sender and receiver. We show that if only near-perfect security is required, the size of the key can be reduced by a factor of two. More specifically, we show that there exists a set of roughly dlogd unitary operators whose average effect on every input pure state is almost perfectly randomizing, as compared to the d² operators required to randomize perfectly. Aside from the private quantum channel, variations of this construction can be applied to many other tasks in quantum information processing. We show, for instance, that it can be used to construct LOCC data hiding schemes for bits and qubits that are much more efficient than any others known, allowing roughly logd qubits to be hidden in 2logd qubits. The method can also be used to exhibit the existence of quantum states with locked classical correlations, an arbitrarily large amplification of the correlation being accomplished by sending a negligibly small classical key. Our construction also provides the basic building block for a method of remotely preparing arbitrary d-dimensional pure quantum states using approximately logd bits of communication and logd ebits of entanglement.     

The Q-switched Nd : YAG and Yb : YAG microchip lasers optimization and comparative analysis

The microchip lasers based on the neodymium or the ytterbium doped yttrium-aluminium garnet crystal and Q-sw itched by the Cr⁴⁺:YAG film are considered. The optimal (maximizing of energy) values of the pumping beam radius, the absorber parameters (the thickness and tetravalent chromium ion concentration), and the output mirror reflectivity are determined. The possibility of higher values of energy in the Yb:YAG laser pulse, in comparison with a more traditional Nd:YAG laser, is also substantiated. PACS 42.60.Gd     

Unusual Behavior of Nanocrystalline Strontium Oxide Toward Hydrogen Sulfide

The thermodynamically favored reaction of solid strontium oxide with gaseous hydrogen sulfide is kinetically enhanced to a large degree by the use of higher surface area nanocrystalline SrO in the form of brush-like collections of metal oxide fibers. An unusual feature is that the reaction SrO + H₂S SrS + H₂O proceeds stoichiometrically at room temperature, but at higher temperatures the reaction efficiency goes down, apparently due to rapid temperature induced crystal growth of the nanocrystalline SrO. The samples studied vary in crystallite size from 20 to 27nm, while average particle size (nanocrystal aggregates) varies in the following order; aerogel prepared SrO (100nm) 相似文献   

Tailoring of the functional properties of sol–gel films on Pt/TiO2/SiO2/(100)Si substrates: (Pb,La)TiO3/(Pb,Ca)TiO3 multilayer heterostructures

Preferentially oriented sol–gel (Pb,Ca)TiO₃/(Pb,La)TiO₃/(Pb,Ca)TiO₃ and (Pb,La)TiO₃/(Pb,Ca)TiO₃/(Pb,La)TiO₃ multilayer heterostructure thin films deposited on silicon-based substrates have been studied and compared with identically prepared (Pb,La)TiO₃ (PTL) and (Pb,Ca)TiO₃ (PTC) films. The existence in their texture of two components that contribute to the net polarization in the direction normal to the plane of the film, 001 and 111, results in significant ferroelectric and pyroelectric properties. P_r=26 Ccm^-2 and =28.5×10^-9 Ccm^-2K^-1, and P_r=17 Ccm^-2 and =22.8×10^-9 Ccm^-2K^-1, have been achieved, respectively, in the PTL/PTC/PTL and PTC/PTL/PTC heterostructures. The surface roughness of these films provides a high specific surface that can be interesting for infrared detectivity. An increase of the dielectric permittivity in the whole temperature interval up to the transition temperature has been observed for both heterostructures with respect to the PTL and PTC films. This effect is due to a release of stress in the heterostructures that is revealed by the increase of the tetragonal distortion, c/a, of these films. PACS 68.55.Jk; 77.80.-e; 77.84.Dy     

The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. II. Silicon and oxygen bonding states

The early oxidation stages of hydrogen-terminated single-crystalline (100) silicon have been studied by X-ray photoemission spectroscopy, following the evolution of the Si2p and O1s signals after exposure to N₂:N₂O ambient at 850 °C for different durations. Evidence is given that the usual analysis of the film in terms of the Si2p peak leads to inconsistencies, related to the presence in the film of non-siloxanic bridges, as oxygen-rich defects (like hydroxyl terminations or peroxo bridges) or oxygen-deficient defects (like amino bridges). Information on the film structure is obtained by combining the analysis of the Si2p peak with that of the O1s peak. PACS 82.65.+r; 68.35.Fx; 68.35.Dv; 79.60.Jv     

Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

Electrical and photoluminescence properties were investigated for epitaxial films of layered oxychalcogenides, LnCuOCh (Ln=La, Pr, and Nd, Ch=S or Se). Epitaxial films of Mg 10 at.% doped LaCuOS_1-xSe_x are the first demonstration of degenerate conduction with high hole concentration >10²⁰ cm^-3 in wide gap p-type semiconductors. Ion substitution varied the excitonic emission energy from 3.21 eV to 2.89 eV while lanthanide and chalcogenide ion substitutions displayed the opposite tendency against cell volume. These unique properties are discussed with respect to the electronic structure originating from the layered crystal structure. PACS 72.20.-i; 73.50.-h; 78.55.Hx; 78.66.-w     

Electrical and optical properties and stabilization of the Fermi level in GaP crystals irradiated by electrons and H+ ions

Electrical and optical properties and Fermi level stabilization are studied in GaP crystals irradiated by electrons (E2.2 MeV, D1·10¹⁹ cm^–2) and H⁺ ions (E5 MeV, D1.7·10¹⁶ cm^–2). It is shown that the limiting position of the Fermi level (F_limE_G/2±0.2 eV) is independent of the initial GaP parameters and the type of bombarding particle, but is determined by the condition of local neutrality of the defective GaP. Resistivity values for the irradiated specimens of _max(D)1·10¹³ ·cm were obtained at 300 K. At maximum integral particle fluxes a decrease in crystal resistivity to (3–6)·10⁹ ·cm was observed. The readjustment of GaP absorption spectra in the region hvE_G upon irradiation is related to recharging of gap states by radiation defects upon motion of the Fermi level toward F_lim.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 37–42, December, 1994.     

Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

Heteroepitaxial thin films of Cu-based oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=mixture of S and Se), were fabricated and their resulting film structures were characterized. A reactive solid-phase epitaxy method successfully yielded heteroepitaxial films on MgO(001) substrates. A high-resolution electron microscopic examination of a LaCuOS film revealed a sharp film-substrate interface. Four-axes high-resolution X-ray diffraction measurements revealed that crystalline lattices in the films are fully relaxed and that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO. Furthermore, systematic variations in the lattice constant by lanthanide or chalcogen ion substitutions were observed. PACS 81.10.Jt; 81.15.-z; 81.15.Np; 68.55.-a; 81.20.-n     

Q-switching of a diode cladding-pumped Erbium Fibrelaser at 2.7 μm

Reliable Q-switched operation of a cladding-pumped 2.7m ZBLAN fibre laser in the range of the power limit of self-destruction is shown for the first time. The laser is pumped by a multimode diode. Q-switching is achieved by two different techniques: a rotating mirror and an acousto-optical modulator. Pulse widths of 500ns with the rotating mirror and 300ns (FWHM) with the acousto-optical modulator and pulse energies in the J range are achieved.