Fabrication and characterization of double-wall carbon nanotube absorber for passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the double-wall carbon nanotubes (DWCNT) onto a hydrophilic quartz substrate. The fast recovery time and the saturation intensity of the absorber were measured to be 228 fs and 130 μJ/cm², respectively, at 1060 nm. The modulation depth of the absorber was about 3.7%. Passive mode-locked Nd:GdVO₄ laser was demonstrated. The continuous wave mode-locked pulses pulse duration is 5.6 ps and the largest average output power is 1.2 W at the pump power of 9.5 W. To the best of our knowledge, this is the first demonstration of high power continuous wave mode locking laser with DWCNT absorber.     

Semiconductor type single wall carbon nanotube absorber for passive mode-locked Nd:YVO4 laser

The pure semiconductor type single wall carbon nanotubes (SWCNT) was transferred on hydrophilic glass substrate to fabricate saturable absorbers by vertical evaporation technique. The recovery time of the absorber is 350 fs. The saturation intensity of the absorber was found to be 115 μJ/cm² at 1060 nm. The modulation depth of the absorber could be about 7%. Passive mode-locked Nd:YVO₄ laser using this kind of absorber was demonstrated. The largest average output power of the mode-locked laser is 1.4 W at the pump power of 7.8 W. The continuous wave mode-locked pulses with the repetition of 80 MHz were achieved.     

Cavity-dumped mode-locked Nd:GdVO<Subscript>4</Subscript> laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO₄ laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.     

High power ultrafast Nd:YVO<Subscript>4</Subscript> laser mode locked by single wall carbon nanotube absorber

We use a single walled carbon nanotubes (SWCNTs) absorber to demonstrate a high power mode locking for Nd:YVO₄ lasers. Under the pump power of 12 W, continuous wave mode-locked (CWML) pulse were generated with the maximum average output power of 3.6 W and the pulse duration of 7.6 ps. The peak power and the single pulse energy of the mode-locked laser were up to 4.9 kW and 37.5 nJ, respectively. To our knowledge, this is the highest average output power of the CWML laser with the SWCNTs absorber reported.     

Passive mode-locked Nd:YVO<Subscript>4</Subscript> laser using a multi-walled carbon nanotube saturable absorber

We report a passive mode-locked Nd:YVO₄ laser pumped by 880 nm LD using a transmission-type multi-walled carbon nanotube saturable absorber. At the pump power of 6.1 W, the average output power of 0.8 W of continuous wave mode-locked laser with optical conversion efficiency of 13.1% was generated. The repetition rate and pulse energy of the mode-locked pulse were 88 MHz and 9.1 nJ, respectively.     

A passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with a carbon nanotube saturable absorber

We report the mode locking of a diode pumped Nd:YVO₄ crystal laser by using a transmission-type single-walled carbon nanotube saturable absorber. The laser operated at 1064 nm pumped by a fiber coupled laser diode with the cavity length of 1826 mm, generated a pulse width of 14 ps at a repetition rate of 82 MHz. The output power of 120 mW was obtained at the absorbed pumping power of 1400 mW.     

Diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser

By using both an acoustooptical (AO) modulator and a Cr⁴⁺:YAG saturable absorber in the cavity, a diode-pumped doubly Q-switched Nd:GdVO₄ laser, which can generate short pulses with high peak powers and symmetric temporal profiles, has been demonstrated. A peak power of 3.05 kW with a corresponding pulse width of 16 ns has been achieved at an incident pump power of 7.7 W. A reasonable analysis about the experimental results has been given by considering the ground-state absorption and excited-state absorption of a Cr⁴⁺:YAG crystal.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

A high beam quality laser-diode end-pumped Nd:GdVO<Subscript>4</Subscript> slab laser

An 83 W, near-diffraction-limited LD end-pumped Nd:GdVO₄ slab laser with hybrid resonator was presented with the pumping power of 238 W, the slope efficiency and optical-to-optical conversion efficiency were 39.4 and 34.9%, respectively. At the output power of 70 W, beam quality M² factors were 1.2 in stable direction and 1.3 in unstable direction.     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

Performance improvement of high repetition rate electro-optical cavity-dumped Nd:GdVO<Subscript>4</Subscript> laser

We improved the electro-optical cavity-dumped Nd:GdVO₄ laser performance at high repetition rates by employing continuous-grown GdVO₄/Nd:GdVO₄ composite crystal under 879 nm diode-laser pumping. A constant 3.8 ns duration pulsed laser was obtained and the repetition rate could reach up to 100 kHz with a maximum average output power of 13.1 W and a slope efficiency of 56.4%, corresponding to a peak power of 34.4 kW.     

High average power and short pulse duration continuous wave mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO₄ laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd³⁺ doped Nd:GdVO₄ crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.     

Theoretical and experimental studies on the self-Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP green laser

A diode-pumped self-Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/KTP green laser is presented. The self mode-locking is self-starting and stable. About 100% modulation depth for the self-mode-locked green pulses has been achieved. We propose a developed rate equation model for self-Q-switched and mode-locked lasers, using the hyperbolic secant function methods and the theory of Kerr-lens mode-locking. This will consider the cascading of second-order nonlinearities of KTP crystal, the third-order nonlinearity of the laser medium, influences of the continuous pump rate, and the stimulated radiation lifetime of the active medium. With the model developed, theoretical calculations are shown to be in good agreement with experimental results. The width of the mode-locked green pulse is estimated to be about 120 ps. PACS 42.60.Fc; 42.60.Gd; 42.65.Hw     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.     

Diode single-end-pumped AO Q-switched Nd:GdVO<Subscript>4</Subscript> 266 nm laser

By simple extra-cavity frequency conversion, the performance of a diode single-end-pumped AO Q-switched Nd:GdVO₄/KTP/BBO 266 nm laser was demonstrated. Under the incident pump power of 14.32 W, the maximum average output power at 266 nm was 374 mW at the repetition of 20 kHz; the opticaloptical conversion efficiency was 2.6%. The corresponding pulse width was 5 ns, with the single-pulse energy and peak power calculated to be 18.7 μJ and 3.74 kW, respectively. The dependence of the operational parameters on the pump power was also investigated experimentally.     

Diode-pumped passively Q-switched and Q-switch mode-locked Nd:YVO<Subscript>4</Subscript> laser using single-wall carbon nanotube based saturable absorber

We present the performance of diode end-pumped Nd:YVO₄ laser in Q-switched and Q-switched mode-locking oscillation using a single-walled carbon nanotube based saturable absorber, which was fabricated using similar vertical evaporation technique. The average output power, repetition rate and pulse width of the Q-switched laser output were studied with different output couplers. The maximum average output power was 130 mW. For Q-switched mode-locking operation, the repetition rate of the mode-locked pulses concentrated in the Q-switched envelope was 58 MHz. The repetition rate of the Q-switched envelope maintained at 18 kHz, while the pulse width decreased along with the increasing of pump power. The maximum average output power was 53 mW.     

Comparison of electro-optical and acousto-optical Q-switched,high repetition rate Nd:GdVO<Subscript>4</Subscript> laser

The differences between the performances of electro-optical (EO) and acousto-optical (AO) Q-switched, diode pumped Nd:GdVO₄ laser at high repetition rates were detailed in this paper. The results revealed that EO Q-switch was more favorable to obtain short pulse width and high peak power laser than AO Q-switch under high repetition rate operation. The minimum pulse widths at 100 kHz were 20.2 ns under EO operation and 28.7 ns under AO operation, corresponding to peak powers of 3.1 kW and 2.2 kW, respectively. The corresponding values at 10 kHz were 5.3 ns, 9.0 ns and 77.4 kW, 45.6 kW, respectively.     

LD end-pumped passively mode-locked Nd:YVO<Subscript>4</Subscript> laser with single-walled carbon nanotubes

We demonstrate a LD end-pumped passively mode-locked Nd:YVO₄ laser using a single-walled carbon nanotubes saturable absorber (SWCNT-SA). The SWCNT wafer was fabricated by electric arc discharge method on quartz substrate with absorption wavelength of 1064 nm. At the absorbed pump of 15.8 W, an output power of 750 mW CW (continuous wave) mode-locked laser pulse was achieved with the repetition of 79.7 MHz, corresponding to optical-optical efficiency of 4.75%.