Theoretical study of the molecular ions SiH−5 and SiH−3

Ab initio HF and Cl calculations were performed to determine the equilibrium geometry of SiH^?₅ and SiH^?₃, the barrier for internal rotation (SiH^?₅) and inversion (SiH^?₃) and the stability of SiH^?₅ and further to study the effect of electron correlation on reaction energies. The gaussian-type basis included d and f functions on Si and a p set on II. The D_3h structures of SiH^?₅ is lower in energy than the C_4v structure by 2.9(3.2) kcal/mol (corresponding HF results in parentheses). SiH^?₃ has C_3v structure, the inner-ion barrier computed is 26.2 (27.3) kcal/mol. SiH^?₅ turns out to be stable with respect to SiH₄ + H^? by 20.3 (13.8) kcal/mol, but it is unstable with respect to SiH^?₃ ← H₂ by 6.3 (5.6) kcal/mol. These results show that electron correlation has a small effect on barriers of inversion (SiH^?₃) or pseudorotation (SiH^?₅), but may have a pronounced effect on reaction energies even if all systems involved have closed shells. The correlation energy contributions are analyzed in terms of intrapair and interpair terms in order to get a better understanding of the influence of correlation on reaction and activation energies.     

The gas-phase decomposition of methylsilane. Part III. Kinetics

The homogeneous gas-phase decomposition kinetics of methylsilane and methylsilane-d₃ have been investigated by the comparative-rate-single-pulse shock-tube technique at total pressures of 4700 torr in the 1125–1250 K temperature range. Three primary processes occur: CH₃SiH₃ → CH₃SiH + H₂ (1), CH₃SiH₃ → CH₄ + SiH₂ (2), and CH₃SiH₃ → CH₂ = SiH₂ + H₂ (3). The high-pressure rate constants for the primary processes in CH₃SiH₃ obtained by RRKM calculations are log (k₁ + k₃) (s^?1) = 15.2 - 64,780 Cal/θ and log k₂ (s^?) = 14.50 - 67,600 → 2800 Cal/θ. For CH₃SiD₃ these same rate constants are log k₁ (s^?) = 14.99 - 64,700 cal/θ log k₂ (s^?) = 14.68 – 66,700 → 2000 cal/θ, and log k₃ (s^?) = 14.3 ? 64,700 cal/θ.     

Koopmans' theorem ionization potentials of methyl and silyl halides,chalcogenides, amines,and phosphines: An ab InitioSCF study

Koopmans' theorem ionization potentials have been calculated for a series of hydrides, methyls, and silyls H_nX, (CH₃)_nX, and (SiH₃)_nX (X = F, Cl, n = 1; X = O, S, n = 2; X = N, P, n = 3), together with some mixed species (MH₃)_nXH_3-n (X = N, P; M = C, Si) using ab initio SCF methods. The calculated values give excellent agreement with experimental values without the inclusion of d functions. For the chlorides, HCl, CH₃Cl, and SiH₃Cl, the values vary rather little over a wide range of basis sets, and are unaffected by the inclusion of d functions.     

An ab initio molecular orbital study of the structures and energies of neutral and charged bimolecular complexes of NH3 with the hydrides AHn (A = N,O, F,P, S,and Cl)

Hartree-Fock 6-31G(d) structures for the neutral, positive ion, and negative ion bimolecular complexes of NH₃ with the first- and second-row hydrides AH_n (AH_n = NH₃, OH₂, FH, PH₃, SH₂, and ClH) have been determined. All of the stable neutral complexes except (NH₃)₂, the positive ion complexes with NH₃ as the proton acceptor, and the negative ion complexes containing first-row anions exhibit conventional hydrogen bonded structures with essentially linear hydrogen bonds and directed lone pairs of electrons. The positive ion complex NH₄⁺ …? OH₂ has the dipole moment vector of H₂O instead of a lone pair directed along the intermolecular line, while the complexes of NH₄⁺ with SH₂, FH, and ClH have structures intermediate between the lone-pair directed and dipole directed forms. The negative ion complexes containing second-row anions have nonlinear hydrogen bonds. The addition of diffuse functions on nonhydrogen atoms to the valence double-split plus polarization 6-31G(d,p) basis set usually decreases the computed stabilization energies of these complexes. Splitting d polarization functions usually destabilizes these complexes, whereas splitting p polarization functions either has no effect or leads to stabilization. The overall effect of augmenting the 6-31G(d,p) basis set with diffuse functions on nonhydrogen atoms and two sets of polarization functions is to lower computed stabilization energies. Electron correlation stabilizes all of these complexes. The second-order Møller–Plesset correlation term is the largest term and always has a stabilizing effect, whereas the third and fourth-order terms are smaller and often of opposite sign. The recommended level of theory for computing the stabilization energies of these complexes is MP2/6-31+G(2d,2p), although MP2/6-31+G(d,p) is appropriate for the negative ion complexes.     

Ab initio calculations on (SiH3)2F+: stability in the gas phase and model for bridging fluorine atom in ion-implanted amorphous silicon

Ab initio calculations have been performed on model molecular clusters simulating bridging fluorine configurations in fluorinated amorphous silicon. Optimized geometries, total energies and vibrational frequencies have been computed for (SiH₃)₂F⁺ clusters with the terminal SiH₃ groups eclipsed or staggered. The stable minimum on the potential energy surface corresponds to a linear, but very flexible, Si-F-Si bridging configuration. (SiH₃)₂F⁺ appears to be stable with respect to unimolecular decomposition. The calculated vibrational frequencies include a strongly infrared-active antisymmetric stretch mode at 740 cm⁻¹, similar to the metastable “Bband” experimentally observed at 750 cm⁻¹ in the ion-implanted samples. These results are compared with calculated geometries and vibrational frequencies of SiH₃F, SiH₃F⁺, SiH₂F⁺ and Si₂H₅F.     

Infrared and raman spectra,vibrational assignment and barriers to internal rotation for methyldisilylamine

The Raman spectra of gaseous and liquid (SiH₃)₂NCH₃ and (SiH₃)₂NCD₃ have been recorded to within 10 cm^?1 of the exciting line. The IR spectra of (SiH₃)₂NCH₃ and (SiH₃)₂NCD₃ have been recorded from 80 cm^?1 to 3800 cm^?1 in the gaseous state, and from 80 cm^?1 to 450 cm^?1 in the solid state. A vibrational assignment has been made, and from the low-frequency vibrational data, an upper limit of 3.3 kcal mol^?1 was calculated for the barrier to internal rotation of the silyi groups, whereas a barrier of ~450 cal was calculated for internal rotation of the methyl group. It is concluded that there exists a significantly strong d_π—p_π interaction in methyldisilylamine.     

Theoretical study and rate constants calculation for the reactions of SiH3 radical with SiH3CH3 and SiH2(CH3)2

The multiple‐channel reactions SiH₃ + SiH₃CH₃ → products and SiH₃ + SiH₂(CH₃)₂ → products are investigated by direct dynamics method. The minimum energy path (MEP) is calculated at the MP2/6‐31+G(d,p) level, and energetic information is further refined by the MC‐QCISD method. The rate constants for individual reaction channels are calculated by the improved canonical variational transition state theory (ICVT) with small‐curvature tunneling (SCT) correction over the temperature range of 200–2400 K. The theoretical three‐parameter expression k₁(T) = 2.39 × 10⁻²³T^4.01exp(−2768.72/T) and k₂(T) = 9.67 × 10⁻²⁷T^4.92exp(−2165.15/T) (in unit of cm³ molecule⁻¹ s⁻¹) are given. Our calculations indicate that hydrogen abstraction channel from SiH group is the major channel because of the smaller barrier height among eight channels considered. © 2009 Wiley Periodicals, Inc. J Comput Chem 2010     

Ab initio chemical kinetics for reactions of H atoms with SiHx (x = 1–3) radicals and related unimolecular decomposition processes

Hydrogen atoms and SiH_x (x = 1–3) radicals coexist during the chemical vapor deposition (CVD) of hydrogenated amorphous silicon (a‐Si:H) thin films for Si‐solar cell fabrication, a technology necessitated recently by the need for energy and material conservation. The kinetics and mechanisms for H‐atom reactions with SiH_x radicals and the thermal decomposition of their intermediates have been investigated by using a high high‐level ab initio molecular‐orbital CCSD (Coupled Cluster with Single and Double)(T)/CBS (complete basis set extrapolation) method. These reactions occurring primarily by association producing excited intermediates, ¹SiH₂, ³SiH₂, SiH₃, and SiH₄, with no intrinsic barriers were computed to have 75.6, 55.0, 68.5, and 90.2 kcal/mol association energies for x = 1–3, respectively, based on the computed heats of formation of these radicals. The excited intermediates can further fragment by H₂ elimination with 62.5, 44.3, 47.5, and 56.7 kcal/mol barriers giving ¹Si, ³Si, SiH, and ¹SiH₂ from the above respective intermediates. The predicted heats of reaction and enthalpies of formation of the radicals at 0 K, including the latter evaluated by the isodesmic reactions, SiH_x + CH₄ = SiH₄ + CH_x, are in good agreement with available experimental data within reported errors. Furthermore, the rate constants for the forward and unimolecular reactions have been predicted with tunneling corrections using transition state theory (for direct abstraction) and variational Rice–Ramsperger–Kassel–Marcus theory (for association/decomposition) by solving the master equation covering the P,T‐conditions commonly employed used in industrial CVD processes. The predicted results compare well experimental and/or computational data available in the literature. © 2013 Wiley Periodicals, Inc.     

Eclipsed and staggered conformations of (SIH3)2F+: An ab initio study

Ab initio calculations at 6–31G**, 6–31++G**, and MP2/6–31G** levels were performed on disilyl–fluoronium, (SiH₃)₂F⁺, with the SiH₃ group eclipsed or staggered. Optimized geometries, total energies, dipole moments, atomic charges, electronic density, and vibrational frequencies were computed. The results were compared with calculated structural parameters and vibrational frequencies of H₃SiF, H₂SiF⁺, H₂SiF^?, and H₄SiF⁺ ions. The basis-set effects were studied. Several thermochemistry parameters—ZPE, thermal energy, rotational constants, and entropies—were also calculated. © 1994 John Wiley & Sons, Inc.     

On the additivity of basis set effects in some simple fluorine containing systems

The reactions F + H₂ → HF + H, HF → H + F, F → F⁺ + e^? and F + e^? → F^? were used as simple test cases to assess the additivity of basis set effects on reaction energetics computed at the MP4 level. The 6-31G and 6-311G basis sets were augmented with 1, 2, and 3 sets of polarization functions, higher angular momentum polarization functions, and diffuse functions (27 basis sets from 6-31Gd, p) to 6-31 ++ G(3df, 3pd) and likewise for the 6-311G series). For both series substantial nonadditivity was found between diffuse functions on the heavy atom and multiple polarization functions (e.g., 6-31 + G(3d, 3p) vs. 6-31 + G(d, p) and 6-31G(3d, 3p)). For the 6-311G series there is an extra nonadditivity between d functions on hydrogen and multiple polarization functions. Provided that these interactions are taken into account, the remaining basis set effects are additive to within ±0.5 kcal/mol for the reactions considered. Large basis set MP4 calculations can also be estimated to within ±0.5 kcal/mol using MP2 calculations, est. E_MP4(6-31 ++ G(3df, 3pd)) ≈ E_MP4(6-31G(d, p)) + E_MP2(6-31 ++ G(3df, 3pd)) – E_MP2(6-31G(d, p)) or E_MP4(6-31 + G(d, p) + E_MP2(6-31 ++ G(3df, 3pd)) – E_MP2(6-31 + G(d, p)) and likewise for the 6-311G series.     

Aminoderivate hydrierter Oligosilane: Darstellung,Charakterisierung und Eigenschaften

Summary Amino derivatives of linear and branched tri- und tetrasilanes R₂N-H₂Si(SiH₂)SiH₂-NR₂ H₃SiSiHNR₂SiHNR₂SiH₃, R₂N-H₂SiSiH₂SiH₂SiH₂-NR₂ und (R₂N-H₂Si)₂SiHSiH(SiH₂-NR₂)₂ with R = Et, SiMe₃ are formed by the reaction of the corresponding bromooligosilanes with suitable amines or alkali metal amides. Product distribution and yields are strongly influenced by the nucleophilicity of the amino reagent and by the structure of the SiSi-backbone. The structures proposed for the aminopolysilanes thus prepared are proved by²⁹Si-,¹H-NMR-and MS-investigations.

     

On the convergence properties of the Rayleigh–Schrödinger and the Hirschfelder–Silbey perturbation expansions for molecular interaction energies

By applying the powerful direct optimization technique of conjugate gradients as adapted for the optimization of an open shell energy functional, a uniformly balanced (15^s 10^p) Gaussian basis set was obtained for the silicon atom. The quality of this basis set, as defined in terms of “exponent forces” or energy gradient |g|, is compatible with the quality of suitably chosen (10^s 5^p) carbon and (5^s) hydrogen basis sets. Contractions better than double zeta were determined for all three bases of Si, C, and H. Using the primitive and contracted bases, ab initio SCF MO calculations were carried out on molecules of SiH₄, CH₄, and H₂. Some of the computed results obtained for H₂C = SiH₂ are also included as an illustration for organo-silicon compounds.     

Synthesis,Structural Characterization and Reactivity of a Bis(phosphine)(silyl) Platinum(II) Complex

Treatment of 1,2‐C₆H₄(SiH₃)(SiH₃) ( 1 ) with Pt(dmpe)(PEt₃)₂ (dmpe=Me₂PCH₂CH₂PMe₂) in the ratio of 1:1 leads to the complex {1,2‐C₆H₄(SiH₂)(SiH₂)}Pt^II (dmpe) ( 2 ), which can react with proton organic reagent bearing hydroxy group with low steric hindrance to form a tetra‐alkoxy substituted silyl platinum(II) compound ( 3 ). Compounds 2 and 3 are the very rare examples of silyl transition‐metal complexes derived from this chelating hydrosilane ligand. To the best of our knowledge, there are only 6 examples of silyl metal complexes prepared from this ligand with such structural features registered in the Cambridge Structural Database, among them, only one silyl platinum(II) compound is presented. The structures of complexes 2 and 3 were unambiguously determined by multinuclear NMR spectroscopic studies and single crystal X‐ray analysis.     

Conformational Stability,Structural Parameters,Vibrational Frequencies,and Raman and Infrared Intensities of Allylsilane

The Raman spectra (3500 to 30 cm^–1) of allylsilane, CH₂CHCH₂SiH₃, in the liquid with quantitative depolarization ratios and solid states and the infrared spectra (3500 to 30 cm^–1) of the gas and solid have been recorded. Similar data have also been recorded for the Si-d₃ isotopomer. Additionally, the mid-infrared spectra of the normal sample dissolved in liquified xenon as a function of temperature (–100 to –50°C) have been recorded. All these data indicate there is a single conformer, the gauche rotamer, in all three physical states. Utilizing the Si-H stretching frequencies from the infrared spectrum of the gaseous CH₂CHCH₂SiD₂H isotopomer, the three Si-H bond distances (r ₀) are calculated to be 1.484 Å for the gauche conformer. The other r ₀ parameters are estimated from the previously reported rotational constants. The fundamental frequencies for the asymmetric (78 cm^–1) and SiH₃ (137 cm^–1) torsions were obtained from sum and difference bands with the SiH₃ stretches. From the SiH₃ torsional frequency the barrier to internal rotation is calculated to have a value of 731 cm^–1 (8.74 kJ/mol). The optimized geometries, conformational stabilities, harmonic force fields, infrared intensities, Raman activities, depolarization ratios, and vibrational frequencies have been obtained from RHF/6-31G* and/or MP2/6-31G* ab initio calculations. These quantities are compared to the corresponding experimental quantities when appropriate as well as with some corresponding results for some similar molecules.     

Structure and stability of SiH+4

Ab initio calculations at the 4-31G level are carried out on the species SiH_n (n = 0 to 4) and the corresponding ions. SiH⁺₄ is found to distort from T_d to D_2d. C_2v, and C_3v, with the latter structure being the lowest in energy by 11 kcal/mole. Consistent with experimental mass spectroscopy, SiH⁺₄ is found to be much less stable to dissociation than CH⁺₄.     

Spectroscopic constants of SiH2, GeH2, SnH2, and their cations and anions from density functional computations

Local (LSD ) and nonlocal (NLSD ) spin density calculations using different exchangecorrelation functionals have been performed to determine equilibrium geometries, harmonic vibrational frequencies (ωe), ionization potentials (IP ), electron affinities (EA ), dipole moments (μ), and singlet-triplet energy gaps (Δ E_ST) of SiH₂, GeH₂, and SnH₂. Geometrical structures as well as vibrational frequencies are in agreement with the available experimental data and compare favorably with the most sophisticated postHartree-Fock computations performed until now. Both computed IPS (9.15 and 9.25 eV for SiH₂ and GeH₂, respectively) and EA of SiH₂ (1.17 eV) compare favorably with experimental data (9.17, 9.21, and 1.2 eV). Accurate values are obtained also for singlet-triplet energy gaps. We report for the first time the electron affinities of all neutral systems and the spectroscopic constants of the cations and anions. © 1995 John Wiley & Sons, Inc.     

Modification of Yttrium Silyl-Bridged Amide Alkyl Complexes through Si−H/C−H Cross-Dehydrocoupling of Silanes with a Silylamino Ligand: Synthesis,Reactivity, and Mechanism

A new method for the modification of a silylamino ligand has been developed through mono and dual C(sp³)−H/Si−H cross-dehydrocoupling with silanes. The reaction of [LY{η²-(C,N)-CH₂Si(Me₂)NSiMe₃}] (L=bis(2,6-diisopropylphenyl)-β-diketiminato, L′ ( 1^L ′); L=tris(3,5-dimethylpyrazolyl)borate, Tp^Me2 ( 1^TpMe2 )) with 2 equivalents of PhSiH₃ in toluene gave the complexes [LY{η²-(C,N)-C(SiH₂Ph)₂Si(Me₂)NSiMe₃}] (L=L′ ( 2^L’ ); L=Tp^Me2 ( 2^TpMe2 )). Moreover, 1^TpMe2 reacted with the secondary silanes Ph₂SiH₂ and Et₂SiH₂ to afford the corresponding mono C−H activation products [Tp^Me2Y{η²-(C,N)-CH(SiHR₂)Si(Me₂)NSiMe₃}] (R=Ph ( 4 b ); R=Et ( 4 c )). The equimolar reaction of 1^TpMe2 with PhSiH₃ also produced the mono C−H activation product 4 a ([Tp^Me2Y{η²-(C,N)-CH(SiH₂Ph)Si(Me₂)NSiMe₃}(thf)]). A study of their reactivity showed that 4 a facilely reacted with 2 equivalents of benzothiazole by an unusual 1,1-addition of the C=N bond of the benzothiazolyl unit to the Si−H bond to give the C−H/Si−H cross-dehydrocoupling product [(Tp^Me2)Y{η³-(N,N,N)-N(SiMe₃)SiMe₂CH₂Si(Ph)(CSC₆H₄N)(CHSC₆H₄N)}] ( 5 ). These results indicate that this modification endows the silylamino ligand with novel reactivity.     

Vibrational spectra and molecular symmetry of tetrasilylhydrazine and tetrasilylhydrazine-d12

The Raman spectra of tetrasilylhydrazine and tetrasilylhydrazine-d₁₂ have been recorded for the gas, liquid and solid phases from 25 to 2500 cm^?1. The infrared spectra of N₂(SiH₃)₄ and N₂(SiD₃)₄ have been recorded for the gas and solid phases from 40 to 2500 cm^?1. The vibrational data have been interpreted on the basis of a twisted (D_2d) molecular configuration for both the fluid and solid states.     

Mechanism and kinetics of the shock-tube decomposition of vinylsilane

The shock-induced thermal decompositions of vinylsilane and vinylsilane-d₃ (0.2% on argon) have been studied in the temperature range of 1085–1275 K, and at total pressures of about 3100 torr. In systems without silylene traps, some induced decomposition occurs which is attributed to the silylene chain sequence VSiH → C₂H₂ + SiH₂, S?iH₂ + VSiH₃ ? VSiH₂SiH₃ → VSiH₂S?iH + H₂, VSiH₂S?iH → VSiH + S?iH₂. In the presence of silylene traps (butadiene and acetylene), the overall decomposition kinetics are log k(VSiH₃, s^?1) = 14.95 ? 63,268 cal/2.303RT and log k(VSiD₃, s^?1) = 15.14 ? 64,815 cal/2.303RT. Three primary processes contribute to the decomposition: 1,1-H₂ elimination, 1,2-H₂ elimination, and ethylene elimination. Two mechanisms are proposed, one for exclusive primary process formation of C₂H₄, and the other for both primary and secondary formation routes. Modeling studies are reported which show that both mechanisms can be made compatible with the rate and product yield data within experimental errors.     

Theoretical investigations on the defect structures and g factors for V4+ in 30PbO-5Bi2O3-(65-x)SiO2 glasses at different concentrations

For 3d¹ (V⁴⁺) impurity in 30PbO-5Bi₂O₃-(65-x)SiO₂ glass systems with different concentrations x of V2O5, the defect structures and gyromagnetic factors are theoretically investigated by using the perturbation formulas of g factors for a tetragonally compressed octahedral 3d¹ group. The concentration dependences of d-d transition band and g factors are suitably explained from the Fourier type concentration functions of the cubic crystal field parameter Dq, covalency factor N and relative tetragonal compression ratio ρ. The above concentration dependences of these quantities are suitably illustrated by the modifications of the local crystal field strength and electron cloud distribution with increasing x. The concentration variations of the electrical conductivity and dielectric relaxation are further analyzed from the stability of the systems in view of two competitive factors (increasing network polymerization and bulk stability at low concentrations and decreasing former SiO₂ and stability at high concentrations).