Photoluminescence of chromium doped CdIn2S4

Well-resolved photoluminescence spectra of CdIn₂S₄: Cr³⁺ recorded at 77K and 2K have been analysed. The R-lines from the doublet ²E-⁴A₂ transition and their associated vibronic spectra have been assigned. These results yield a revised value for the crystal field parameter of B = 618 cm^-1     

Polarization-modulated magnetoreflection in magnetic semiconductors: CdCr2S4 and EuSe

The polarization-modulated (PM) magnetoreflection technique has been used to study magnetic ordering effects in CdCr₂S₄ and EuSe. The energy gap for direct band-band transitions in CdCr₂S₄ has been measured to be E_G = 2.3 eV, and the exchange splitting of the valence band to be about 0.03 eV. Good agreement with thin film absorption measurements is obtained in the temperature dependence of spectral structure, observed at energies less than E_G, associated with crystal field and charge transfer transitions. No strongly blue-shifting peak is observed with magnetic order. PM magnetoreflection spectra of the E₁ peak of EuSe show a direct manifestation of the spin alignment from the ferrimagnetic to ferromagnetic state of this crystal at 2 K in external fields up to 16 kOe. An attempt is made to explain resonant Raman scattering in EuSe (observed by other workers) in terms of the field-induced shift of one of the polarized E₁ reflectivity components into coincidence with the 5145 Å argon-ion laser line.     

Electron band structure of α-ZnIn2S4 and related polytypes

Pseudopotential calculations have been carried out for the α, β and γ polytypic forms of the layer semiconductor ZnIn₂S₄, respectively, corresponding to space groups C⁵_3v, C¹_3v and D³_3d. The required form factors are consistent with those used in our previous calculations for ZnS and CdIn₂S₄. The band structure of the α phase, the only one up to now for which optical data are available, compares quite satisfyingly with very recent photoemission and reflectivity experimental data. The computed band structures of the β and γ phases are very alike; on the contrary, interesting differences exist between these structures and the α phase which could easily be verified by experimental investigations.     

Raman scattering in Ag-intercalated TiS2

Ag-intercalated TiS₂ has been investigated using electron diffraction and Raman scattering. The energies of the E_g-1 and A_1g modes in 1T-TiS₂ at 300 K were found to be 232 and 336 cm^-1, respectively. In Ag_0.3TiS₂, at an ambient temperature of 4.2 K, modes were observed at 207, 239, 277, 311, and 347 cm^-1. Three of these modes have been associated with the formation of a superlattice at low temperatures. The superlattice formation was observed by electron diffraction and is attributed to an ordering of the silver atoms at interlayer interstices.     

Detection of partial inverse spinel structure in CdIn2S4 by fourier transform spectroscopy

The lattice vibrational spectrum of a single crystal of CdIn₂S₄ has been recorded at low temperature (4.2 K) by using Fourier transform spectroscopy. The absorption line corresponding to the T_1u IR active mode has been studied in detail. It has been observed that this line is split into two closely spaced lines located at 69.9 and 71.1 cm^?1. This splitting is explained on the basis of the existence of a partially inverse spinel structure.     

Study of the band edge in CdIn2S4 by photovoltaic effect

Photovoltaic spectra were measured at 300 and 100 K on AuCdIn₂S₄ Schottky barriers in the spectral range near the band edge of the compound. Analysis of the spectra gives the values of the direct and indirect gaps at both temperatures together with the associated phonon energies. The results are compared with the predictions of the most recent band calculations on CdIn₂S₄.     

Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4

We present the infrared and Raman study of the optical phonon modes of the defective compounds ZnGa₂Se₄ and ZnGa₂S₄. Most of the compounds have been found to crystallize in the thiogallate structure (defect chalcopyrite) with space group where all cations and vacancies are ordered. For some Zinc compounds a partially disordered cationic sublattice with various degrees of cation and vacancy statistical distribution, which lead to the higher symmetry (defect stannite), has been reported. For ZnGa₂Se₄ we have found three modes of A symmetry, showing Raman activity only. In addition, we have observed each five modes of B and E symmetry, showing infrared as well as Raman activity. The number of modes and their symmetry assignment, based on polarized measurements, clearly indicate space group for the investigated crystals of ZnGa₂Se₄.Regarding ZnGa₂S₄ we have found three modes exclusively showing Raman activity (2A⊕1B₁), and only eight modes showing infrared as well as Raman activity (3B₂⊕5E). The assignment of the modes has been derived by analyzing the spectral positions of the vibrational modes in comparison to a number of compounds. From the number and symmetry assignment of the optical phonon modes we confirm that ZnGa₂S₄ most likely crystallizes in space group .     

Raman and infrared spectra of ZnSiAs2

The optical phonons at k = 0 of ZnSiAs₂ have been investigated by Raman scattering and infrared reflectivity measurements at 300 K. Eleven of thirteen expected optically active phonons have been observed and identified with respect to their symmetry types. The phonon frequencies appear in the range from 415 cm^-1 to 75 cm^-1 with predominant polar modes at 400 cm^-1 (gG₅), 389 cm^-1 (Γ₄) and 242 cm^-1 (Γ₄). The dielectric dispersion for E ⊥ c and E 6 c has been determined by Kramers-Kronig integrations.     

Morphology, structure and photocatalytic performance of ZnIn2S4 synthesized via a solvothermal/hydrothermal route in different solvents

Hexagonal ZnIn₂S₄ photocatalysts with different morphology and crystallinity (micro-structures) were prepared in aqueous-, methanol- and ethylene glycol-mediated conditions via a solvothermal/hydrothermal method. The aqueous- and methanol-mediated ZnIn₂S₄ presented to be Flowering-Cherry-like microsphere, while the ethylene glycol-mediated ZnIn₂S₄ presented to be micro-cluster. In comparison with two other products, aqueous-mediated ZnIn₂S₄ possessed the best crystallinity (micro-structure), which resulted in the highest photocatalytic activity for hydrogen evolution under visible-light irradiation. Additionally, aqueous-mediated ZnIn₂S₄ was found to be more stable than the other two ZnIn₂S₄ photocatalysts while undergoing the photocatalytic process. During the photocatalytic reaction, the average rates for hydrogen production over aqueous-, methanol- and ethylene glycol-mediated ZnIn₂S₄ were determined to be 27.3, 12.4 and 9.1 μmol h^-1, respectively, in the present photocatalytic systems.     

Valence band photoemission spectroscopy of a ternary layered semiconductor: ZnIn2S4

UV photoemission spectroscopy (UPS) experiments have been carried out on the layer compound ZnIn₂S₄ employing several different photon energies in the range $\text{h}\text{?}{}_{\mathrm{\omega }}\text{= 9.5?21.2}\text{eV}$. The energy distribution curves (EDC's) exhibit four valence band density of states structures besides the Zn 3d peak. These five peaks appear 0.90 eV, 1.6 eV, 4.3 eV, 5.8 eV and 8.7 eV respectively below the top of the valence band, E_v. The atomic orbital character of the shallowest peak A appears different from that of the three deeper valence band peaks B, C and D and this is discussed in terms of the more or less pronounced ionic character of the intralayer chemical bonds. These results demonstrate that an overall understanding of the electronic states in complex structures can be achieved by an approach based on photoemission experiments and chemical bonding considerations which has been widely used in the past to study simple binary layer compounds.     

Valence band densities of states of CdIn2S4 and In2S3 from x-ray photoelectron spectroscopy

X-ray photoelectron spectra of the valence band of CdIn₂S₄ and In₂S₃ single crystals have been measured. The spectrum of CdIn₂S₄ has a strong resemblance to its synthesized spectrum from the In₂S₃ and CdS spectra, which is in good agreement with the theoretical density of states (DOS). The contribution of constituent atoms to the valence band DOS in CdIn₂S₄ is corresponding to those in In₂S₃ and CdS.     

High-pressure Raman spectroscopic studies on orthophosphates Ba3(PO4)2 and Sr3(PO4)2

By using diamond anvil cell (DAC), high-pressure Raman spectroscopic studies of orthophosphates Ba₃(PO₄)₂ and Sr₃(PO₄)₂ were carried out up to 30.7 and 30.1 GPa, respectively. No pressure-induced phase transition was found in the studies. A methanol:ethanol:water (16:3:1) mixture was used as pressure medium in DAC, which is expected to exhibit nearly hydrostatic behavior up to about 14.4 GPa at room temperature. The behaviors of the phosphate modes in Ba₃(PO₄)₂ and Sr₃(PO₄)₂ below 14.4 GPa were quantitatively analyzed. The Raman shift of all modes increased linearly and continuously with pressure in Ba₃(PO₄)₂ and Sr₃(PO₄)₂. The pressure coefficients of the phosphate modes in Ba₃(PO₄)₂ range from 2.8179 to 3.4186 cm⁻¹ GPa⁻¹ for ν₃, 2.9609 cm⁻¹ GPa⁻¹ for ν₁, from 0.9855 to 1.8085 cm⁻¹ GPa⁻¹ for ν₄, and 1.4330 cm⁻¹ GPa⁻¹ for ν₂, and the pressure coefficients of the phosphate modes in Sr₃(PO₄)₂ range from 3.4247 to 4.3765 cm⁻¹ GPa⁻¹ for ν₃, 3.7808 cm⁻¹ GPa⁻¹ for ν₁, from 1.1005 to 1.9244 cm⁻¹ GPa⁻¹ for ν₄, and 1.5647 cm⁻¹ GPa⁻¹ for ν₂.     

Raman spectra of As4S4 polymorphs: Structural implications for amorphous As2S3 films

Raman-scattering spectra of α-As₄S₄ and β-As₄S₄ have been determined at 300 and 10 K. Although similar in overall aspect, the spectral signatures of the two polymorphs are clearly distinct. We have made a careful comparison of these first-order crystal line spectra to the sharp features reported in the Raman spectra of freshly-deposited films of amorphous As₂S₃. Prior proposals for the presence of As₄S₄ molecules in the unannealed films are supported by these comparisons, but recent contentions that actual microcrystals of β-As₄S₄ are present in the as-deposited material are clearly contradicted by the absence of any of the lattice-phonon lines which are prominent in the crystals at frequencies below 70 cm^-1.     

Raman studies of (Fe,V)3S4 solid solution

Raman scattering of Fe_xV_3-xS₄ with 0?x?2 has been studied. The observed spectra of V₃S₄, one of the end members of this solid solution, have been assigned to the Raman active lattice modes based on the C_2h³ space group symmetry. On the basis of the results obtained for V₃S₄, the nature of the metal-metal interactions and the site distributions of Fe atoms in (Fe, V)₃S₄ have been discussed.     

Structural,elastic and thermodynamic properties under pressure and temperature effects of MgIn2S4 and CdIn2S4

A density functional-based method is used to investigate the structural, elastic and thermodynamic properties of the cubic spinel semiconductors MgIn₂S₄ and CdIn₂S₄ at different pressures and temperatures. Computed ground structural parameters are in good agreement with the available experimental data. Single-crystal elastic parameters are calculated for pressure up to 10 GPa and temperature up to 1200 K. The obtained elastic constants values satisfy the requirement of mechanical stability, indicating that MgIn₂S₄ and CdIn₂S₄ compounds could be stable in the investigated pressure range. Isotropic elastic parameters for ideal polycrystalline MgIn₂S₄ and CdIn₂S₄ aggregates are computed in the framework of the Voigt–Reuss–Hill approximation. Pressure and thermal effects on some macroscopic properties such as lattice constant, volume expansion coefficient and heat capacities are predicted using the quasi-harmonic Debye model in which the lattice vibrations are taken into account.     

Dark-current relaxation in EuGa2S4 single crystals

The results of the investigation of dark-current relaxation in EuGa₂S₄ single crystals are reported. The depth and concentration of the traps are found to be E_t = 0.79 eV and N_t = 1.64 × 10¹⁴ cm^?3, respectively.The charge accumulation region (d_c = 3.3 × 10^?5 cm) and contact capacitance (C_c = 1.23 × 10^?10 F) are also estimated.     

Optical phonons in CuAlS2

The optical phonons at k=0 of CuAlS₂ have been investigated by Raman scattering, infrared reflectivity and absorption measurements from 50 to 1000 cm^-1 at T=300 K. Eleven of the thirteen expected optically active phonons have been observed and identified with respect to their symmetry types. The phonon frequencies appear in a range from 498 to 76 cm^-1 with predominant polar modes at 445 and 266 cm^-1. The dielectric dispersion for E ⊥ c and E ∥ c has been determined by Kramers-Kronig integrations.     

Inelastic light scattering and photoluminescence in the mixed valence systems Eu3O4, Eu3S4 and Sm3S4

The thermally activated valence fluctuations of Eu₃S₄ and Sm₃S₄ have been studied using light scattering and photoluminescence techniques and are compared with measurements on the non-fluctuating compound Eu₃O₄, Eu₃S₄ exhibits an anomalous vibrational mode which is associated with the frequency factor of hopping, ν₂=1.3×10¹³ sec^?1. In Sm₃S₄ electronic Raman scattering is observed within the ⁷F₉ multiplet of the Sm²⁺ ion. An anomalous frequency shift of the5d-4f photoluminescence emission band in Eu₃S₄ is related to the temperature dependent fluctuation rate which passes through the reference time scale of the photoluminescence. Intra-4f photoluminescence has also been observed in Eu₃S₄ and Sm₃S₄.     

Photoelectrochemical properties of electrochemically deposited CdIn2S4 thin films

Thin films of CdIn₂S₄ have been deposited on to stainless steel and fluorine-doped tin oxide (FTO)-coated glass substrates from aqueous acidic bath using an electrodeposition technique. Ethylene diamine tetra-acetic acid (EDTA) disodium salt is used as complexing agent to obtain good-quality deposits by controlling the rate of the reaction. The different preparative parameters like concentration of bath, deposition time, bath temperature, pH of the bath have been optimized by the photoelectrochemical (PEC) technique in order to get good-quality photosensitive material. Different techniques have been used to characterize CdIn₂S₄ thin films. Optical absorption shows the presence of direct transition with band gap energy 2.17 eV. The X-ray diffraction (XRD) analysis of the as-deposited and annealed films showed the presence of polycrystalline nature. Energy-dispersive analysis by X-ray (EDAX) study for the sample deposited at optimized preparative parameters shows that the In-to-Cd ratio is almost 2 and S-to-Cd ratio is almost 4. Scanning electron microscopy (SEM) for samples deposited at optimized preparative parameters reveals that spherical grains are uniformly distributed over the surface of the substrate indicates the well-defined growth of polycrystalline CdIn₂S₄ thin film. PEC characterization of the films is carried out by studying photoresponse, spectral response and photovoltaic output characteristics. The fill factor (ff) and power conversion efficiency (η) of the cell are 69 and 2.94%, respectively.     

Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4

The photoconductivity of ZnIn₂Se₄ and CdIn₂Se₄ single crystals has been studied at 4.2 K. The spectra are compared to reflectivity spectra and relevant structures are interpreted in terms of interband transitions. The absence of excitonic transitions is discussed in connection with the crystalline perfection.