Control of electronic state in organic conductors by systematic band filling

Organic superconductors have been usually obtained by the bandwidth control of antiferromagnetic insulator. In order to find another parameter to control the electronic state, the band filling control has been applied to obtain the carrier-controlled organic conductors. As a result, the systematic band filling control for four kinds of organic conductors has been succeeded. The obtained crystals were (a) 2:1 salts, λ-ET₂(GaCl₄¹⁻)_1−x(CoCl₄²⁻)_x [ET=bis(ethylenedithio)tetrathiafulvalene], doping to the antiferromagnetic insulator, (b) 2:1 salts, δ′-ET₂(GaCl₄)_1−x(CoCl₄)_x, doping to the non-magnetic insulator, (c) 3:1 salts, α-ET₃(CoCl₄)_1−x(GaCl₄)_x(TCE), doping to the charge ordered salt, and (d) 3:2 salts, β′-ET₃(CoCl₄)_2−x(GaCl₄)_x, doping to the half-filled band insulator. For both 2:1 salts, (a) and (b), the semiconducting behaviors have transferred to relatively conductive semiconducting ones by doping. The largest change of transport property is observed for (d) β′-phase from semiconducting behavior of parent material to metallic ones [β′-ET₃(CoCl₄)_2−x(GaCl₄)_x (x=0.88, 0.66)] down to 140 and 100 K, respectively.These systematic band filling control suggests that the doping to the 1/2-filled band insulator is most effective.     

生长在GexSi1-x(001)衬底上应变GaAs层的价电子能带结构与光学性质

采用紧束缚方法对生长在Ge_xSi_1-x(001)衬底上的应变ＧａＡｓ层的价电子能带结构和空穴的三次非线性光学极化率x⁽³⁾进行了计算结果表明，由于应变的存在，使ＧａＡｓ层的空穴有效质量和价带态密度变小，而使偏振方向在（００１）面内的三次非线性光学极化率x_xxxx⁽³⁾变大． 关键词：     

Exciton-phonon coupling in indirect AlxGa1−xAs

Several persistent high-energy peaks in the photo-luminescence spectrum of indirect Al_xGa_1?xAs are reported. These transitions are assigned to zero-phonon and phonon-assisted bound-exciton annihilation processes. Symmetry determined selection rules indicate that the major interband recombination mechanism is due to LO phonon scattering of electrons near X(100) to the energetically adjacent Γ^CB₁ (000) intermediate state. Scattering associated with alloy disorder may also contribute to the spectrum. The change in the phonon-assisted spectra at x = 0.43 ± 0.01 provides an additional means of identification of the direct-indirect conduction band crossover.     

Disorder-induced Raman scattering of In1−xGaxP in the transverse acoustic phonon region

Raman scattering measurements have been performed on In_1?xGa_xP (0.62?x?1) over the entire frequency range of first and second order scattering. Besides the already known disorder activated band between the LO(Γ) and TO(Γ) modes a new disorder activated band is found in the region of transverse acoustic phonons around 87 cm^-1. The position of the new band shifts only slightly with composition while its strength and line-shape change.     

Spectral line parameters in the (2 ← 0) overtone band and the dipole moment function of the HI molecule

We present here new high-resolution experimental data on the linestrengths and pressure-broadened Lorentzian widths for the P₂(13) to R₂(12) vibration-rotation lines in the first overtone absorption band of hydrogen iodide. By combining the measured linestrengths with our previous results for the fundamental band [J. Mol. Spectrosc. 218 (2003) 75] and with other published data for the higher-overtone bands of this molecule, an improved dipole moment expansion as a function of the dimensionless reduced nuclear displacement x is obtained: μ(x)=0.4471(5)−0.0772(2)x+0.542(3)x²−1.90(2)x³. This experimental dipole moment function is compared with the results of a few recent non-relativistic and relativistic ab initio calculations. The agreement between theoretical and experimental Herman-Wallis coefficients for the first two vibrational bands of HI is found best as ever reported before.     

Coupled mode behavior of the soft E(TO) phonon of Pb(Ti1-x,Zrx)O3 and (Pb1-3x2, Lax)TiO3

We report the temperature dependence of the low frequency part (ω < 100 cm^?1) of the Raman spectra of the Pb(Ti_1-x, Zr_x)O₃ and $\text{(}\text{Pb}{}_{\mathrm{<mtext>1-</mtext><mtext>3x</mtext><mtext>2</mtext>}}$, La_x)TiO₃ systems. The spectra indicate a coupled mode behavior between the soft E(TO) phonon and a mode which produces an additional band in the spectra. We discuss the possibility that the additional band might be due to zone boundary tranverse acoustical phonons which couple to the q ～ 0 soft E(TO) mode because of the disorder existing in the systems.     

Magnetic and magneto-transport properties of (Ba0.8Sr0.2)2−xNdxFeMoO6

The variation in structural, magnetic and magneto-transport properties of the double perovskite system (Ba_0.8Sr_0.2)_2?xNd_xFeMoO₆ {0.0<X<0.5} induced by Nd³⁺ doping (electron doping) has been studied and compared. The samples were prepared by standard solid state reaction method in a reducing atmosphere. The parent compound showed a saturation magnetic moment value of 3.75 μ_B/f.u. at an applied field of 0.5 T and a change in magnetoresistance value up to 26% (77 K, 0.8 T). The Rietveld refinement of the X-ray diffraction data showed a continuous decrease in lattice parameters and Fe–Mo ordering with increasing Nd³⁺ doping. The Curie temperature was found to increase with Nd³⁺ doping (3 K per % of Nd) while the saturation magnetic moment values and magnetoresistance values were found to decrease. The observed variations in magnetic and magneto-transport properties of the system are explained on the basis of increasing antisite disorder defects and band filling effects induced by electron doping. We have observed the dominant role of band filling in determining the low field magnetoresistance of these systems.     

Preparation,surface state and band structure studies of SrTi(1 − x)Fe(x)O(3 − δ) (x = 0–1) perovskite-type nano structure by X-ray and ultraviolet photoelectron spectroscopy

In this report, SrTi_(1 ? x)Fe_(x)O_(3 ? δ) photocatalyst powder was synthesized by a high temperature solid state reaction method. The morphology, crystalline structures of obtained samples, was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscopy (TEM), respectively. The electronic properties and local structure of the perovskite STF_x (0 ≤ x ≤ 1) systems have been probed by extended X-ray absorption fine structure (EXAFS) spectroscopy. The effects of iron doping level x (x = 0–1) on the crystal structure and chemical state of the STF_x have been investigated by X-ray photoelectron spectroscopy and the valence band edges for electronic band gaps were obtained for STF_x by ultraviolet photoelectron spectroscopy (UPS). A single cubic perovskite phase of STF_x oxide was successfully obtained at 1200 °C for 24 h by the solid state reaction method. The XPS results showed that the iron present in the STF_x perovskite structure is composed of a mixture of Fe³⁺ and Fe⁴⁺ (SrTi_(1 ? x)[Fe³⁺, Fe⁴⁺]_(x)O_(3 ? δ)). When the content x of iron doping was increased, the amount of Fe³⁺ and Fe⁴⁺ increased significantly and the oxygen lattice decreased on the surface of STF_x oxide. The UPS data has confirmed that with more substitution of iron, the position of the valence band decreased.     

Low-temperature specific heat of orientational glasses

This review summarizes specific heat data measured at low temperatures (T<1 K) on orientational glasses. Three species of mixed molecular crystals exhibiting orientational disorder are considered, namely (KBr)_1–x (KCN) _x , (NaCN)_1–x (KCN) _x (Rb)_1–x (NH₄) _x H₂PO₄. For intermediate concentrations of the anisotropic components, glass-like excitations have been observed. It is demonstrated that with respect to thermal properties, orientational disorder leads to the same universal behaviours than for structural disorder, i.e. a specific heat which varies below 1 K and for times 10^–4 s–10 s as:C _p(T,t)T ¹×ln(t). The variation of the glass-like anomaly with compositional disorder is also discussed. It is concluded that the low-energy excitations are related to orientational degrees of freedom which are frozen at low temperatures but still perform reorientations via quantum tunneling motions.     

Frequency dependence of the large,electronic χ(3) in polyacetylene

The third order optical susceptibilities (χ⁽³⁾) of trans- and cis- (CH)_x have been determined in the spectral region below the gap by measuring the third harmonic generation efficiency. The magnitude of χ⁽³⁾ parallel to the polymer chains in trans-(CH)_x is in excess of 10⁻⁹ esu for wavelengths larger than 1.3 μm, and the spectrum of χ⁽³⁾ in trans-(CH)_x has a sharp two-photon resonance at an energy corresponding to half the semiconducting gap. Both the off resonance and the two-phonon resonance enhanced values of χ⁽³⁾ are explained by a simple band picture.     

Spectral line parameters in the (3 ← 0) overtone band of the HI molecule and line-mixing in the band head

The linestrengths, self-pressure broadening and shifting coefficients have been measured for P₃ (10)- R₃ (12) lines in the second overtone band of hydrogen iodide. A dipole moment function in terms of the reduced nuclear displacement x = (R − R_e)/R_e is obtained using rotationless dipole matrix elements determined by the Herman-Wallis analysis of the (1, 2, 3 ← 0) HI bands: μ (x) = 0.4471(5) − 0.0770(2)x + 0.547(3)x² − 1.93(2)x³, in a full agreement with the function proposed previously [J. Mol. Spectrosc. 223 (2004) 67]. A close match is demonstrated of the results of most recent relativistic calculations [Phys. Chem. Chem. Phys. 6 (2004) 3779] with the spectroscopically derived electric dipole parameters for HI. Line-mixing in the band head is observed, the self-pressure shifting and broadening coefficients for the (3 ← 0) band lines are determined.     

Disorder activated Raman scattering in Ga1−xAlxAs alloys

We report Raman scattering experiments in mixed crystals Ga_1?xAl_xAs in the spectral range 20 – 400 cm^?1. We performed the measurements for several incident and scattered light polarizations. Besides the D.A.L.A. already observed¹ we find a new band at lower energy. We interpret this structure as due to disorder activated transverse acoustical phonons and label it D.A.T.A. Several weaker bands corresponding to disorder activated optical processes are also seen. Our results are compared with recent calculations of Talwar et al².     

Optical absorption of zinc selenide doped with cobalt (Zn1−xCoxSe) under hydrostatic pressure

Abstract

The optical absorption of the diluted magnetic semiconductor Zn_1?xCO_xSe (x = 0.02) has been measured at room temperature under hydrostatic pressure up to 14GPa in a membrane diamond-anvil cell. We found two absorption features: (i) an absorption structure in the energy range 1.6?1.8eV, with a negligible pressure shift (i.e., 0.45 ± 0.05 meV/GPa) which we have identified as the Co²⁺(3d⁷) internal transition ⁴A₂(F)→+⁴T₁(P) and (ii) an onset in the energy range 2?2.7eV which redshifts with pressure (?8.1±0.6meV/GPa). We have attributed such absorption edge to charge transfer between the ZnSe valence band and the Co²⁺(3d⁷) levels.     

T-band phenomena in 183Re

Abstact: High-spin states in ¹⁸³Re have been studied using the ¹⁷⁶Yb(¹¹B,4n) reaction at 52 and 57 MeV. Two high-K bands have been observed directly by a time-correlated γ-γ coincidence measurement. One of the bands is built on an isomeric K ^π=(25/2)⁺ state at E _x= 1908 keV with a half-life of 0.82(2) ms. The other band, assigned as K ^π=(29/2)⁻ at E _x= 2739 keV, decays to the (25/2)⁺ band. These bands are interpreted as three-quasiparticle structures, π(5/2)⁺[402] &⊗ν(9/2)⁺[624] ⊗ν(11/2)⁺[615] for the (25/2)⁺ band and π(9/2)⁻[514] ⊗ν(9/2)⁺[624] ⊗ν(11/2)⁺[615] for the (29/2)⁻ band. The K ^π= (29/2)⁻ band becomes strongly Coriolis mixed with increasing spin and is gradually changing into a low-K s-band structure. Received: 20 April 1998     

Luminescent properties of red-emitting LiSr4B3O(9−3x/2)Nx:Eu2+ phosphor for white-LEDs

An Eu²⁺-activated oxynitride LiSr_(4?y)B₃O_(9?3x/2)N_x:yEu²⁺ red-emitting phosphor was synthesized by solid-state reactions. The synthesized phosphor crystallized in a cubic system with space group Ia–3d. The LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphors exhibited a broad red emission band with a peak at 610 nm and a full width at half maximum of 106 nm under 410 nm excitation, which is ascribed to the 4f⁶5d¹→4f⁷ transition of Eu²⁺. The optimal doped nitrogen concentration was observed to be x=0.75. The average decay times of two different emission centers were estimated to be 568 and 489 ns in the LiSr_3.99B₃O_8.25N_0.5:0.01Eu²⁺ phosphors, respectively. Concentration quenching of Eu²⁺ ions occurred at y=0.07, and the critical distance was determined as 17.86 Å. The non-radiative transitions via dipole–dipole interactions resulted in the concentration quenching of Eu²⁺-site emission centers in the LiSr₄B₃O₉ host. These results indicate LiSr₄B₃O_(9?3x/2)N_x:Eu²⁺ phosphor is promising for application in white near-UV LEDs.     

EPR of an exchange-coupled,hydrogen-bridged one-dimensional Cu(II) complex containing both octahedral and square pyramidal geometries in the same unit cell

Single-crystal X and Q band EPR of a hydrogen-bridged l-dimensional Cu(II) complex, [Cu(stpy)₂(CH₃COO)₂(H₂O)₂] [CU(stpy)₂(CH₃COO) ₂(H₂O)], containing both octahedral and square pyramidal geometries in the same unit cell, has been studied at 300 K. EPR of powder samples at X band frequencies at 300 K and 77 K show exchange-narrowed resonance. The peak-to-peak linewidths of the signals are 80 G and 85 G, respectively. However, at Q band frequencies it exhibits an axially symmetric spectrum with spin Hamiltonian parameters g_|| = 2.303 and g_⊥ = 2.077, corresponding to an |x² ? y²〉 ground state. Single-crystal X band EPR spectra show a single resonance line for all the orientations, indicating the complex to be in the strong exchange regime. On the other hand, Q band spectra exhibit two lines corresponding to the weak exchange regime. An estimate of the interchain-site exchange coupling constant J′ = 0.0125(3) cm^?1 also reveals weak coupling between the magnetically distinct Cu(II) centres. The ratio of J′/J = 8.25 × 10^?2 is low enough to make the interactions almost l-dimensional, in agreement with X-ray data. EPR linewidth and lineshape analyses also support l-dimensional behaviour of the system.     

Spectroscopic properties of the rubidium and cesium aluminum double molybdate crystals

Infrared, Raman, electron absorption, excitation and emission spectra were measured for RbCr_xAl_1−x(MoO₄)₂ and CsCr_xAl_1−x(MoO₄)₂ crystals (x=0-2%) at the temperatures ranging from 7 to 300 K. A very rich vibronic structure of the emission band was explained and assigned to the respective vibrational modes. One Cr³⁺ center characterized by 2.35 ms lifetimes for rubidium derivative and 1.3 ms for cesium one at 7 K for the ²E→⁴A₂ transition was identified for both crystals. The local structure of the Cr³⁺ surrounding is discussed in terms of the spectroscopic results and the crystal field parameters are derived for both materials.     

Band alignment and interfacial properties of atomic layer deposited (TiO2)x(Al2O3)1?x gate dielectrics on Ge

(TiO₂) _x (Al₂O₃)_1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO₂)_0.8(Al₂O₃)_0.2 film annealed at 500°C is amorphous with sharp interface between (TiO₂)_0.8(Al₂O₃)_0.2 and Ge. The conduction-band offsets are enhanced from 1.04 to 1.40 eV with increasing Al content. Capacitance equivalent thickness of 15.8 ? for (TiO₂)_0.9(Al₂O₃)_0.1 gate dielectrics is achieved with a gate leakage current of 2.70×10⁻⁵ A/cm² at V _g=+1 V.     

Variations of ionic binding energies and the distribution of charge carriers in orthorhombic La2−x Sr x CuO4

The significance of heterovalent, substitutional disorder for the distribution of charge carriers in La_2−x Sr _x CuO₄ has been investigated. Disorder is shown to cause strong variations of binding energies of the ions ranging to some eV for Sr contentsx=0.1. Balancing the energy for a hole transport, Cu³⁺+O²⁻→Cu²⁺+O⁻, and taking binding energy variations into account, the process is realized to become possible without consuming energy for a subset Θ for allx Cu³⁺ in one formula unit of La_2−x Sr _x CuO₄. The functions Θ(x) are presented for hole transports to apex and in-plane oxygens, respectively. The delocalization of charge carriers is interpreted to be caused by valency disorder on metal lattice sites.     

Nanomechanical properties inside the scratch grooves of soda–lime–silica glass

Zn_2?2x Mn_2x GeO₄ (x=0, 0.001, 0.01) phosphors were prepared by conventional solid state reaction technique. X-ray powder diffraction (XRD), field emission scanning electron microscopy (FE-SEM), diffuse reflection spectra, photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the synthesized phosphors. The Mn²⁺-activated Zn₂GeO₄ phosphors exhibit narrow emission band at 532 nm under the excitation of ultraviolet light, which due to the ⁴T₁(⁴G)–⁶A₁(⁶S) transition of Mn²⁺ ions. Also it is observed that there exists energy transfer between the Zn₂GeO₄ host lattice and the activator (Mn²⁺). Under excitation of low-voltage electron beams, Zn₂GeO₄:Mn²⁺ shows strong green emission band dominating at 535 nm, corresponding to the ⁴T₁(⁴G)–⁶A₁(⁶S) emission of Mn²⁺ ions. The emission intensity and chromaticity coordinates of Zn₂GeO₄:Mn²⁺ as a function of accelerating voltage and the filament current were also investigated.