首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 31 毫秒
1.
Quantitative low energy electron diffraction has been used to determine the structure of the Ni(1 1 1)(√3×√3)R30°-Sn surface phase. The results confirm that the surface layer comprises a substitutional alloy of composition Ni2Sn as previously found by low energy ion scattering (LEIS), and also shows that there is no stacking fault at the substrate/alloy interface as has been found in (√3×√3)R30°-Sb surface alloys on Ag and Cu(1 1 1). The surface alloy layer is rumpled with the Sn atoms 0.45 ± 0.03 Å higher above the substrate than the surrounding Ni atoms. This rumpling amplitude is almost identical to that previously reported on the basis of the LEIS study. Comparison with similar results for Sn-induced surface alloy phases on Ni(1 0 0) and Ni(1 1 0) shows a clear trend to reduced rumpling with reduced surface atomic layer density, an effect which can be rationalised in terms of the different effects of valence electron charge smoothing at the surface.  相似文献   

2.
The local surface structures of in the ( √3 × √3) R30° and (5√3 × 2) phases have been investigated by means of polarization-dependent sulfur K-edge surface EXAFS. In the (√3 × √3 ) R30° phase, sulfur adatoms are found to occupy threefold hollow sites with a S---Ni distance of 2.13 Å and an inclination angle ω of the Sz.sbnd;Ni bonds at 44° from the surface plane. In contrast, in the (5√3 × 2) phase, it is determined that the Sz.sbnd;Ni bond is longer, 2.18 Å, more inclined, ω = 31°, and that the coordination number is not 3 but 4. These results strongly support a picture involving reconstruction of the top nickel layer to form a rectangular structure. Consideration of several models proposed for the (5√3 × 2) phase leads to one which is compatible with both the present results and results recently reported using STM.  相似文献   

3.
S. Schwegmann  H. Over 《Surface science》1996,360(1-3):271-281
The local adsorption geometries of K, Rb and Cs in the (√3 × √3)R30° and (2 × 2) phases on a Rh(111) surface at coverages of 0.33 and 0.25 ML, respectively, are determined by analyzing LEED intensity data. For all (√3 × √3)R30° phases investigated, the three-fold hcp site is found. For the (2 × 2) overlayer, K remains in the hcp position, while Cs favors the on-top position. For the case of Rb-(2 × 2), LEED analysis suggests occupation of the unusual two-fold bridge site. Since LEED analysis of the Rb-(2 × 2) phase is not completely conclusive, additional experimental evidence is necessary to firmly establish this adsorption geometry.  相似文献   

4.
The Si(111)−(√3 × √3)R30°−Ag surface has been investigated using the technique of Li+ impact collision ion scattering spectroscopy. Typical LEED √3 domain sizes were estimated to be on the order of 150 Å for a 1 ML coverage of Ag, with the √3 structure persisting for coverages of Ag up to 35 ML. Silver islanding was found to influence the appearance of the 5 keV Li+ ICISS angular scans even for 1 ML coverages of Ag deposited at 480°C. A detailed structural analysis of the Si(111)−√3−Ag surface (0.25 ML deposition) involved the comparison of 5 keV Li+ ICISS experimental data along the [11 ], [ 10] and [2 1] azimuths with computer simulations of the scattered ion intensities based on previously proposed models for the √3 surface. Nine structurally different models were tested, and only the missing-top-layer (MTL) and the honeycomb-chained-trimer (HCT) models were found to be consistent with all the experimental results. An estimate of 0.4 Å for the maximum downward vertical displacement of the Ag atoms with resect to the surface Si atoms in the MTL model is made. The effects of increased thermal vibrational amplitude in the simulation of Si---Ag shadowing effects is also discussed. The interpretations of previous noble gas ICISS results are shown to be inconsistent with the present alkali metal ICISS study of the √3 surface.  相似文献   

5.
An angle resolved photoemission study of a surface state on the SiC(0001)-(√3 × √3) surface is reported. Experiments carried out on the 6H and 4H polytypes give essentially identical results. A surface state band with semiconducting occupation is observed, centered around 1.0 eV above the valence band maximum (VBM) and with a width of about 0.2 eV. Recently calculated results for a Si-adatom-induced √3 × √3 reconstruction give a metallic surface state band centered about 1.2 eV above the VBM and with a width of 0.35 eV. The dispersion determined experimentally is smaller than calculated but exhibits the same trend, the surface state disperses downwards towards the VBM with increasing parallel wavevector component along both the qG--- and qG--- directions of the √3 × √3 surface Brillouin zone. The VBM is determined to be located at about 2.3(±0.2) eV below the Fermi level. The results indicate that Si adatoms on top of an outermost Si---C bilayer may be an inadequate structural model for explaining recent experimental findings for the SiC(0001)-(√3 × √3) surface.  相似文献   

6.
The 180° low energy impact collision ion scattering spectroscopy with detection of noble gas neutrals (180°-NICISS) has been used to investigate the nitrogen saturated Cu(110) surface, which is known to exhibit a (2 × 3) diffraction pattern. The nitrogen induced (2 × 3) phase appears to be the result of a surface reconstruction of a new missing row type, in which every third 100 row of Cu atoms of the first layer is missing. The 180° NICISS patterns further indicate within an accuracy of 0.1–0.2 Å, that the double periodicity in the [1 0] direction is not due to the reconstruction of the Cu surface. Its origin has to be found in the arrangement of the N atoms.  相似文献   

7.
M. Sotto 《Surface science》1992,260(1-3):235-244
A LEED and AES study on oxygen adsorption on Cu(100) and (h11) faces with 5 h 15 has been performed under various adsorption conditions (220 K T 670 K and 1 × 10−8 P 6 × 10−5 Torr of oxygen). The dependence of adsorption temp on the oxygen surface superstructures is pointed out. At least, three oxygen surface states exist on a Cu(100) face. For low temperature exposures to oxygen, under conditions of slow surface diffusion, on the (100) face, two oxygen surface phases exist: a “four spots” and a c(2 × 2) superstructure, both observed even at saturation coverage; on all the stepped faces, a c(2 × 2) appears and no faceting is observed. For high temperature exposures, on the (100) face, two oxygen superstructures are observed, a “four spots” followed by a (2√2 × √2)R45° at higher coverages; on all the stepped faces, surface diffusion is activated and oxygen induced faceting occurs. The appearance of faceting is associated with the onset of the formation of the (2√2 × √2)R45° structure on the (100) face. The oxygen induced faceting and the oxygen surface meshes are reversible with coverages. At saturation coverage, a non-reversible surface transition between the c(2 × 2) and (2√2 × √2)R45° superstructures is observed at 420 ± 20 K. The importance of impurity traces on the surface meshes is emphasized. Oxygen coverage at saturation is independent of the studied faces and adsorption temperature. Faceting occurs at a critical coverage value, whatever the stepped faces and adsorption temperature are. Models of the oxygen structure on the (h10) stepped faces are discussed.  相似文献   

8.
The structure of the Si(111)√3 × √3-Au surface has been investigated by the use of the surface X-ray diffraction with synchrotron radiation. The structure perpendicular to the surface was determined with respect to the Si bulk crystal. The results of least-squares analysis indicate that Au atoms are adsorbed on the Si substrate in which the first Si layer is missing. The heights of the Au layer and the Si second layer with respect to the intact Si third layer were estimated to be 3.09 ± 0.03 rA and 2.16 ± 0.10 rA, respectively. A possible model of the surface structure is proposed.  相似文献   

9.
The formation of the c(6 × 2)−O phase on a Cu(110) surface, after completion of the (2 × 1)−O structure, was observed by scanning tunneling microscopy (STM). The phase is composed of isotropic structural elements on fourfold hollow sites of the substrate lattice, which form a quasi-hexagonal array and manifest themselves as large protrusions in the STM images. Individual units of this type are mobile and also represent stable nuclei within a (2 × 1) surrounding. Nucleation is activated and occurs preferentially at steps, in contrast to previous findings with the (2 × 1) phase. Structural implications of additional weak features in high resolution images and of the observed change in two-dimensional density of Cu atoms are discussed.  相似文献   

10.
The growth of PbI2 precipitates on single crystal substrates from colloidal solutions has been investigated with in air scanning tunneling microscopy and synchrotron-based X-ray photoelectron spectroscopy. The PbI2 growth on Rh(1 0 0) results in nano-clusters with lateral dimensions between 30 and 60 Å, consistent with earlier reports. However, the growth of PbI2 on a well-ordered iodinated Rh(1 0 0), denoted as (√2×√2)R45°-I, leads to atomically smooth PbI2 films having a hexagonal symmetry with lattice constant identical to the bulk value of 4.5 Å. The heteroepitaxy is believed to be effected by the atomic iodine monolayer that helps to accommodate large lattice mismatch between PbI2 and Rh surface with short-range van der Waals interaction.  相似文献   

11.
Chen Xu  Bruce E. Koel   《Surface science》1994,310(1-3):198-208
The adsorption of NO on Pt(111), and the (2 × 2)Sn/Pt(111) and (√3 × √3)R30°Sn/Pt(111) surface alloys has been studied using LEED, TPD and HREELS. NO adsorption produces a (2 × 2) LEED pattern on Pt(111) and a (2√3 × 2√3)R30° LEED pattern on the (2 × 2)Sn/Pt(111) surface. The initial sticking coefficient of NO on the (2 × 2)Sn/Pt(111) surface alloy at 100 K is the same as that on Pt(111), S0 = 0.9, while the initial sticking coefficient of NO on the (√3 × √3)R30°Sn/Pt(111) surface decreases to 0.6. The presence of Sn in the surface layer of Pt(111) strongly reduces the binding energy of NO in contrast to the minor effect it has on CO. The binding energy of β-state NO is reduced by 8–10 kcal/mol on the Sn/Pt(111) surface alloys compared to Pt(111). HREELS data for saturation NO coverage on both surface alloys show two vibrational frequencies at 285 and 478 cm−1 in the low frequency range and only one N-O stretching frequency at 1698 cm−1. We assign this NO species as atop, bent-bonded NO. At small NO coverage, a species with a loss at 1455 cm−1 was also observed on the (2 × 2)Sn/ Pt(111) surface alloy, similar to that observed on the Pt(111) surface. However, the atop, bent-bonded NO is the only species observed on the (√3 × √3)R30°Sn/Pt(111) surface alloy at any NO coverage studied.  相似文献   

12.
We reconsider the Kaluza-Klein compactifications of D = 11 supergravity on AdS4 × (G/H)7 manifolds that were classified in the eighties, in the modern perspective of AdS4/CFT3 correspondence. We focus on one of the three N = 2 cases: (G/H)7 = M111 = SU(3) × SU(2) × U(1) /SU(2) × U(1)′ × U(1)′'. Relying on the systematic use of the harmonic analysis techniques developed in the eighties by one of us (P. Fré) with R. D'Auria, we derive the complete spectrum of long, short and massless Osp(2|4) × SU(3) × SU(2) unitary irreducible representations obtained in this compactification. Our result also provides a general scheme for the other N = 2 compactifications. Furthermore, it is a necessary comparison term in the AdS4/CFT3 correspondence: the complete AdS/CFT match of the spectra that we obtain will provide a much more stringent proof of the ACS/CFT correspondence than in the S7 case, since the structure of the superconformal field theory on the M2-brane world volume must be such as to reproduce, at the level of composite operators, the flavor group representations, the conformal dimensions and the hyperchanges that we obtain in the present article. The investigation of this match is left to future publications. Here we provide an exhaustive construction of the Kaluza-Klein side of our spectroscopy.  相似文献   

13.
We determined surface structures in a structural sequence c(2 × 2)→(4 × 4)→(5 × 5) formed on Ni(001) at 370 K with increasing Li coverage by a dynamical low-energy electron diffraction analysis. The (4 × 4) and (5 × 5) are complex surface-structures involving restructuring of substrate surface atoms, and are analogous to the previously determined (3 × 3) and (4 × 4) structures formed for Li/Cu(001). The c(2 × 2) at low coverages is a Li adlayer, so a change of the adsorption mode from adlayer- to restructuring-type is evidenced in the course of increasing coverage within a monolayer range.  相似文献   

14.
A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p5 3s3P0 (F = 3/2) state of 21Ne. A magnetic resonance experiment leads to the measurement of the g factor g (3P0) = 3.027 (8) × 10−4 to be compared with the theoretical prediction (3.025(6) × 10−4). One obtains also the metastability exchange cross section σ(3P0) = 18.4 ± 4 Å2 for collisions between metastable (3P0) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.  相似文献   

15.
The local adsorption structure of oxygen on Cu(1 0 0) has been studied using O 1s scanned-energy mode photoelectron diffraction. A detailed quantitative determination of the structure of the 0.5 ML (√2×2√2)R45°-O ordered phase confirms the missing-row character of this reconstruction and agrees well with earlier structural determinations of this phase by other methods, the adsorbed O atoms lying only approximately 0.1 Å above the outermost Cu layer. At much lower coverages, the results indicate that the O atoms adopt unreconstructed hollow sites at a significantly larger O–Cu layer spacing, but with some form of local disorder. The best fit to these data is achieved with a two-site model involving O atoms at Cu–O layer spacings of 0.41 and 0.70 Å in hollow sites; these two sites (also implied by an earlier electron-energy-loss study) are proposed to be associated with edge and centre positions in very small c(2×2) domains as seen in a recent scanning tunnelling microscopy investigation.  相似文献   

16.
The role of kinetics in the superstructure formation of the Sb/Si(0 0 1) system is studied using in situ surface sensitive techniques such as low energy electron diffraction, Auger electron spectroscopy and electron energy loss spectroscopy. Sb adsorbs epitaxially at room-temperature on a double-domain (DD) 2 × 1 reconstructed Si(0 0 1) surface at a flux rate of 0.06 ML/min. During desorption, multilayer Sb agglomerates on a stable Sb monolayer (ML) in a DD (2 × 1) phase before desorbing. The stable monolayer desorbs in the 600–850 °C temperature range, yielding DD (2 × 1), (8 × 4), c(4 × 4), DD (2 × 1) phases before retrieving the clean Si(0 0 1)-DD (2 × 1) surface. The stable 0.6-ML (8 × 4) phase here is a precursor phase to the recently reported 0.25-ML c(4 × 4) surface phase, and is reported for the first time.  相似文献   

17.
The production rate for η′ in ppppη′ at rest is calculated in a covariant one boson exchange model, previously applied to study π0 and η production in NN collisions. The transition amplitudes for the elementary BN → η′N processes with B being the meson exchanged (B = π, σ, η, , ω and a0) are taken to be the sum of s- and u-channels with a nucleon in the intermediate states, and an a0 meson pole in a t-channel. The couplings of the η′ to hadrons are a factor 0.4 weaker than the respective η-hadron couplings, as suggested by a quark model and a singlet-octet mixing angle θ = −23°. The model reproduces near threshold cross sections for the quasielastic processes πpnη(η′) and ppppη(η′) reactions.  相似文献   

18.
The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2) structure was observed between 0.5 and 0.7 ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1 ML and Sb atoms rearrange to and (2×1) reconstructions; released In atoms agglomerate into islands of irregular shapes. During the phase transition process from InSb(2×2) to Sb (θSb>0.7 ML), we observed the formation of a metastable (4×2) structure. Possible atomic arrangements of the InSb(2×2) and metastable (4×2) phases were discussed.  相似文献   

19.
The lifetimes of the Cd+ 52P3/2 and 52P1/2 states have been measured by the Hanle effect. The Cd+ ions are produced in a d.c. discharge in cadmium vapor, with helium as buffer gas. The results are: τ(52P3/2) = (2.60±0.20) ×10−9sec, and τ(52P1/2) = (3.05 ± 0.13) × 10−9sec.

We measured also the cross sections for the destruction of the orientation in the 52P1/2Cd+ state (<5Å2), of the orientation (18±10Å2) and of the alignment (46±10Å2) in the 52P3/2 state due to collisions with the helium atoms.  相似文献   


20.
The interaction of monolayer coverages of pentacene with the √3 × √3 silver terminated Si(1 1 1) surface has been studies by high resolution core level and valence band photoemission spectroscopies. Core level Si 2p spectra reveal that there is only a very weak interaction between the pentacene and the underlying silicon, however, there is evidence of Fermi level movement. Valence band spectra acquired with both s and p polarised light indicate that for the surface coverages investigated, the molecular layers are oriented parallel to the plane of the surface. These results are in agreement with recent scanning tunneling microscopy (STM) studies which indicated that the pentacene molecules form highly ordered layers with the plane of the molecule parallel to the surface. Changes in the workfunction and Fermi level movements have been used to determine the energy level alignment at the interface. A 0.35 eV interface dipole forms between the pentacene and the silver terminated Si(1 1 1) surface within a two monolayer deposition. Photoemission measurements of the energy level alignment at the interface reveal that there is almost no barrier to charge injection from the conduction band of the semiconductor to the lowest unoccupied molecular orbital (LUMO) of the pentacene molecule.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号