Metastable structures of Dy layers adsorbed on Mo(112) and their transformations

Ordering of dysprosium on Mo(112) up to 1.5 monolayers has been investigated by LEED and work function analysis after adsorption at 100 K and annealing between 200 and 1000 K. At low annealing temperatures (< 350-600 K) ordered structures are found, which are changed or even destroyed irreversibly by annealing steps to higher temperatures. At coverages, θ, up to 0.3 monolayer a (6×1) not strictly commensurate chain structure is seen, which coexists up to θ = 0.58 with a one-dimensionally incommensurate c( 1.56×2) structure. At higher coverages up to the physical monolayer at θ≈ 0.77, incommensurate ( n×2) followed by oblique ( n×1) structures are seen with n continuously variable with coverage. The second layer forms a p (1.33×1) structure. Annealing to higher temperatures causes irreversible structural transitions with strongly coverage dependent properties. Up to θ = 0.58, only a glass-like disordered phase is formed, which cannot be ordered again. In contrast, the rectangular incommensurate structures between 0.58 < θ < 0.68 remain unchanged upon annealing, whereas the structures at higher coverages and those of the second layer are transformed into commensurate (s×1) structures with integer s. Geometrical models are presented for the non-annealed structures and possible origins for the two-dimensional concentration dependent vitrification of the Dy layers are discussed. Received 15 June 2001     

Gd adsorption on the Mo(2 1 1) surface

The adsorption of Gd thin layers on the Mo(2 1 1) face was investigated by using Auger electron spectroscopy (AES), low electron energy diffraction (LEED), scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS) and measurements of the work function changes (Δφ). It was found that at 300 K Gd does not form any dilute chain structures and from the very beginning of the adsorption process Gd forms a densely packed layer. The dilute p(4 × 1) chain structure was observed by LEED after annealing thin layers (θ < 1 ML) to temperatures above 770 K. STM images confirm the existence of the p(4 × 1) structure islands. The intermixing of the substrate and adsorbate atoms takes place.     

氮离子轰击钼(001)和钼(110)表面形成的有序结构

用能量为1千电子伏,束流为6微安的氮离子轰击含有痕量碳和氧的钼(001)和钼(110)表面10至15分钟,在俄歇能谱中出现了很强的氮的俄歇峰。从室温直到350℃退火,低能电子衍射观察表明,表面是无序层。样品加热到530℃和650℃之间,在钼(001)表面上得到c(2×2)-氮,p(2×2)-氮和(4(2^1/2)×2^1/2)R45°-氮、氧三种结构的低能电子衍射图;在密堆的钼(110)面得到单一结构的c(7×3)-氮的低能电子衍射图。低能电子衍射图与热脱附密切相关 关键词：     

Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces

At 300 K, an amorphous Al-oxide film is formed on NiAl(001) upon oxygen adsorption. Annealing of the oxygen-saturated NiAl(001) surface to 1200 K leads to the formation of thin well-ordered θ-Al₂O₃ films. At 300 K, and low-exposure oxygen atoms are chemisorbed on CoGa(001) on defects and on step edges of the terraces. For higher exposure up to saturation, the adsorption of oxygen leads to the formation of an amorphous Ga-oxide film. The EEL spectrum of the amorphous film exhibits two losses at ≈400 and 690 cm^-1. After annealing the amorphous Ga-oxide films to 550 K thin, well-ordered β-Ga₂O₃ films are formed on top of the CoGa(001) surface. The EEL spectrum of the β-Ga₂O₃ films show strong Fuchs-Kliewer (FK) modes at 305, 455, 645, and 785 cm^-1. The β-Ga₂O₃ films are well ordered and show (2×1) LEED pattern with two domains, oriented perpendicular to each other. The STM study confirms the two domains structure and allows the determination of the two-dimensional lattice parameters of β-Ga₂O₃. The vibrational properties and the structure of β-Ga₂O₃ on CoGa(001) and θ-Al₂O₃ on NiAl(001) are very similar. Ammonia adsorption at 80 K on NiAl(111) and NiAl(001) and subsequent thermal decomposition at elevated temperatures leads to the formation of AlN. Well-ordered and homogeneous AlN thin films can be prepared by several cycles of ammonia adsorption and annealing to 1250 K. The films render a distinct LEED pattern with hexagonal [AlN/NiAl(111)] or pseudo-twelve-fold [AlN/NiAl(001)] symmetry. The lattice constant of the grown AlN film is determined to be a_AlN= 3.11 Å. EEL spectra of AlN films show a FK phonon at 865 cm^-1. The electronic gap is determined to be E_g= 6.1±0.2 eV. GaN films are prepared by using the same procedure on the (001) and (111) surfaces of CoGa. The films are characterized by a FK phonon at 695 cm^-1 and an electronic band gap E_g= 3.5±0.2 eV. NO adsorption at 75 K on NiAl(001) and subsequent annealing to 1200 K leads to the formation of aluminium oxynitride (AlON). An oxygen to nitrogen atomic ratio of ≈2:1 was estimated from the analysis of AES spectra. The AlON films shows a distinct (2×1) LEED pattern and the EEL spectrum exhibits characteristic Fuchs-Kliewer modes. The energy gap is determined to be E_g= 6.6±0.2 eV. The structure of the AlON film is derived from that of θ-Al₂O₃ formed on NiAl(001). Received: 21 March 1997/Accepted: 12 August 1997     

The formation of a surface iodide on Ni{100} and adsorption of I2 at low temperatures

Iodine adsorption on clean Ni[100] has been investigated using low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At temperatures below 340 K. a saturated surface of adsorbed iodine atoms in a c(2 × 2) structure is observed. Adsorption of iodine on clean Ni{100} at temperatures in exces of 370 K forms a structure identified as a single layer of the layered compound NiI₂ on the metal substrate. Solid iodine is shown to grow epitaxially on both the c(2 × 2) chemisorbed surface and the surface iodide at temperatures less than 185 K. Heating to 185 < T < 226 K leaves a physisorbed molecular iodine layer, while on returning to room temperature the original c(2 × 2) or iodide is restored.     

STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 × √19) substrate

Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 × √19) substrates via Co evaporation and post deposition annealing. This (√19 × √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7×7) reconstruction occurred at the cost of Si(111)-(√19 × √19).      

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

Rapid solidification of Al-Cu-Ag ternary alloy under the free fall condition

The rapid solidification of Al-30%Cu-18%Ag ternary alloy is investigated by using the free fall method. Its solidified microstructure is composed of θ(Al₂Cu), α(Al) and ξ(Ag₂Al) phases. The liquidus temperature and solidus temperature are determined as 778 and 827 K, respectively. The alloy melt undercooled amounts up to ΔT _Max=171 K (0.20T _L). Its microstructural evolution is investigated based on the theoretical analysis of undercooling behavior and nucleation mechanics. It is found that the undercooling increases with the decrease of the diameter of the alloy droplet. When ΔT<78 K, the primary θ(Al₂Cu) phase of the alloy grows into coarse dendrite. When 78 K⩽ΔT⩽171 K, its refined θ(Al₂Cu) phase grows alternatively with α(Al) phase. Once ΔT⩾171 K, its microstructure is characterized by the anomalous (θ+α+ξ) ternary eutectic. Supported by the National Natural Science Foundation of China (Grant Nos. 50121101 and 50395105)     

X-ray photoemission study of MgB<Subscript>2</Subscript> films synthesized from in-situ annealed MgB<Subscript>2</Subscript>/Mg multilayers

Superconducting MgB₂ films were obtained by in-situ annealing of precursor multilayers deposited at low substrate temperature by sputtering from a MgB₂ stoichiometric target and by thermal evaporation of pure Mg. After an in-situ annealing at 500–600 °C, the films showed a zero resistance critical temperature up to 31 K. The as-obtained MgB₂ films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray auger electron spectroscopy (XAES). The electronic structure was studied by monitoring the B 1s, Mg 2p, O 1s core-levels and the Mg KL₂L₃ Auger line. For comparison, the electronic structure of an MgB₂ commercial superconducting sputtering target, of a not-annealed precursor film and of a sample obtained by direct sputtering from the MgB₂ target have also been investigated. Electron spectroscopy showed that in the superconducting systems the Mg KL₂L₃ Auger line kinetic energy position is always higher by about 0.9 eV with respect to the energy position of the same Auger line measured in the non-superconducting samples. PACS 74.25Jb; 74.78.Bz; 74.70.Ad     

Electrical transport properties of CuWO4

The temperature dependence of the electrical conductivity, thermoelectric power and dielectric constant of the antiferromagnetic CuWO₄ have been studied in the temperature range 300–1000 K. The conductivity results can be summarised by the equations σ_I=6.31 × 10⁻³ exp (−0.29 eV/kT) ohm⁻¹ cm⁻¹ in the temperature range 300–600 K and σ_II=3.16 × 10⁵ exp (−1.48 eV/kT) ohm⁻¹ cm⁻¹ between 600 K and 1000 K. The thermoelectric power can be expressed byθ=[− 1.25 (10³/T) + 3.9] mV/K. Initially dielectric constant increases slowly but for high temperatures its increase is fast.     

Bounds on charged lepton mixing with exotic charged leptons

We examine the effects of mixing induced light heavy charged lepton neutral currents on the partial wave amplitude for the process l⁺l⁻ →ZZ (withl = e,μ or τ). By imposing the constraints that the amplitude should not exceed the perturbative unitarity limit at high energy (√s = Λ), we obtain bounds on light heavy charged lepton mixing parameter sin²(2θ _L ^a ) where θ _L ^a is the mixing angle of the ordinary charged lepton with its exotic partner. For Λ = 1 TeV, no bound is obtained on sin² (2θ _L ^a ) form _E < 0.69 TeV. However, sin² (2θ _L ^a ) ≤ 1.52×10⁻⁵ form _E = 5 TeV, sin² (2θ _L ^a ) ≤ 2.41 ×10⁻⁷ form _E = 10 TeV. Similarity for Λ = ∞ no bound is obtained on sin² (2θ _L ^a ) for m_E < 1.97 TeV and sin² (2θ _L ^a ) ≤ 0.15 form _E = 5 TeV and sin² (2θ _L ^a ) ≤ 3.88×10^-2 form _E = 10 TeV.     

Preparation and characterization of iron–molybdate thin films

Mixed Fe–Mo oxides are used in industrial catalytic processes of selective oxidation of methanol to formaldehyde. For better understanding of the structure-reactivity relationships of these catalysts we aim to prepare well-ordered iron–molybdate thin films as model catalysts. Here we have studied Mo deposition onto Fe₃O₄ (111) thin films produced on Pt(111) as a function of Mo coverage and annealing temperature using LEED, AES, STM and IRAS. At low temperatures, the iron oxide film is covered by Mo = O terminated molybdena nanoparticles. Upon oxidation at elevated temperatures (T > 900 K), Mo species migrate into the film and form new bonds with oxygen in the film. The resulting films maintain the crystal structure of Fe₃O₄, and the surface undergoes a (√3 × √3)R30° reconstruction. The structure is rationalized in terms of Fe substitution by Mo in the surface layers.     

Adsorption of oxygen on Mo (112) surface precovered with beryllium: formation of overlayer and electronic properties

Adsorption of oxygen on the Mo?(112) surface precovered with a pseudomorphic monolayer of beryllium has been investigated at room temperature by AES, LEED and contact potential difference methods. Such a Be/Mo?(112) substrate is actually a bimetallic surface where closely-packed atomic Mo ridges alternate with rows of Be atoms. It has been found that at small oxygen exposures (Q < 0.3 Langmuir), the initial sticking coefficient for oxygen S _O on Be/Mo?(112) is lower by a factor of ~1/15 than on the clean Mo?(112) surface where S _O is close to unity. However, with increasing the oxygen coverage above θ _O ≈ 0.1, the sticking coefficient showed a nonlinear growth, and oxygen saturation of the surface was achieved at Q = 1.6–1.7 L. Oxygen adsorption decreases the work function of the Be/Mo?(112) surface and gives rise to appearance of some Auger peaks specific to beryllium oxide, which indicates a change in the chemical nature of the surface. The formation of a polar-covalent BeO compound may be responsible for a self-activation of the surface with respect to oxygen which is reflected in the increase of the sticking coefficient observed under growth of oxygen coverage (a kind of autocatalytic reaction). Annealing of the O/Be/Mo?(112) system to T _an  = 1100 K resulted in an additional decrease of the work function and a growth of the ratio between the Auger signals of Be in the oxide and metallic Be adsorbed phases. The presence of BeO molecules was detected up to T _an  = 1600 K, above which they dissociated with desorption of Be.     

The oxidation of Fe(111)

The oxidation of Fe(111) was studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), ion scattering spectroscopy (ISS) and scanning tunnelling microscopy (STM). Oxidation of the crystal was found to be a very fast process, even at 200 K, and the Auger O signal saturation level is reached within ~ 50 × 10^? 6 mbar s. Annealing the oxidised surface at 773 K causes a significant decline in apparent surface oxygen concentration and produces a clear (6 × 6) LEED pattern, whereas after oxidation at ambient temperature no pattern was observed. STM results indicate that the oxygen signal was reduced due to the nucleation of large, but sparsely distributed oxide islands, leaving mainly the smooth (6 × 6) structure between the islands. The reactivity of the (6 × 6) layer towards methanol was investigated using temperature programmed desorption (TPD), which showed mainly decomposition to CO and CO₂, due to the production of formate intermediates on the surface. Interestingly, this removes the (6 × 6) structure by reduction, but it can be reformed from the sink of oxygen present in the large oxide islands simply by annealing at 773 K for a few minutes. The (6 × 6) appears to be a relatively stable, pseudo-oxide phase, that may be useful as a model oxide surface.     

Size effect on the structure and magnetic properties of SmMn2O5 nanorods

Three sizes of SmMn₂O₅ nanorods that are labeled with (<L_C>) × axial lengths of 58(17) nm × 25(6) nm, 92(21) nm × 32(8) nm, and 126(25) nm × 52(13) nm were fabricated by the hydrothermal method. All the samples exhibited an antiferroicmagnetic (AFM) peak at approximately 6 K, which was associated with Sm magnetic ordering and no size independence. Another AFM magnetic ordering that belongs to the Mn ion was found with <L_C> = 58 nm, 92 nm, and 126 nm at 26 K, 28 K, and 30 K, respectively. The spin-orbit interaction increases with size in the magnetic susceptibility experiment. All the samples displayed a hysteresis loop at 2 K. The coercivity decreases as the size increases. The effects of the size on the crystal structure were elucidated from the Raman spectra of the <L_C> = 92 and 126 nm samples at various temperatures. The 126 nm sample displayed a red-shift for the Ag mode with warming, revealing that the Mn–O bonds are more sensitive to temperature in larger SmMn₂O₅ nanorods. These results demonstrate that the size effect importantly affects the structure and magnetic properties in SmMn₂O₅ multiferroic nanorods.     

4×288 readouts and FPAs properties

Analysis of four types 4×288 designed and manufactured readouts is presented. All the readouts have the direct injection input circuit with the circuits incorporated that allows testing procedure of readouts without the photodiodes attached to readout circuits. TDI registers have three delay elements between neighbouring inputs. Some characteristics of 4×288 FPAs with mercury-cadmium-telluride (MCT) arrays are presented too. Analysis have shown that in spite of different constructions of four readout types, different numbers of outputs and external service, rather similar parameters of FPAs have been obtained. Detectivity values measured for all 4×288 FPAs at operation temperature T ≈ 78 K with skimming mode included and background temperature T_b ≈295 K were in the range D*_λ ≅ (1.2−1.7)×10¹¹ cmHz^1/2/W.     

Chlorine superstructures on Mo(110) investigated by LEED and AES

C1₂ was adsorbed onto a clean Mo(110) surface at room temperature. Four well-defined structures occurred as coverage increased. Below half a monolayer (θ <0.5) a p'(2 × 1) pattern (with respect to the rectangular surface mesh) with p2mg glide-plane symmetry formed. Near θ = 0.5, a p'(1 × 1) structure formed, next p'(1 × 2) and at saturation (θ?0.8) p'(1 × 3). Physically plausible models based on compression structures (relatively even distribution influenced by adatom-adatom repulsion) with bonding sites restricted to the vicinity of quasi-four-fold hollows and three-fold wells are devised to explain these patterns. These models are suitable for the reinterpretation of other investigations of the related systems S on Mo(110) and Cl on Ta(110).     

Oxygen adsorption on clean Mo (100) surfaces

Oxygen adsorption on clean Mo (100) surfaces has been studied by LEED, AES, work function changes and energy loss spectroscopy. At room temperature, the oxygen uptake as determined by AES is linear up to one third of the saturation value. Data obtained with CO adsorption have been used to determine the oxygen coverage. With increasing oxygen exposure LEED shows three stages: a c (2 × 2) phase growing simultaneously with a (6 × 2) structure, a stage with (110) microfacets covered by two-dimensional structures and finally a p (3×1) structure together with a p (1×1) structure, probably due to an oxide phase. Even in the low temperature range (370–500 K) remarkable effects are observed: adsorption at 370 K produces a disordered c (4×4) structure which is followed by a (√5 × √5)?R 26° 33 structure. The same occurs when the inital c (2 × 2) structure formed at 295 K is heated above 370 K. Measurements of the work function indicate a minimum at the end of the c (2×2) structure, then a rapid increase and at saturation a value of about 1.5 V above that of the clean surface. Energy loss spectroscopy measurements point to an increase of the surface plasmon energy during the faceting stage. New transitions are observed which are due to new electronic levels induced by the adsorption. They are comparable with photoemission results on W and Mo.     

Surface phases of Se deposited on Ni(001)

Reflection electron diffraction and Auger electron spectroscopy have been used to study the temperature versus coverage (T versus θ) phase diagram for Se submonolayers on Ni(001). Disordered, p(2×2) and c(2×2) phases are observed for θ < 0.5. (2×1) and c(4×2) phases were nerver observed. High Se exposures (θ > 0.5) lead to bulk compound formation for substrate temperatures T>350 K with the only distinguishable diffraction pattern being c(4×4). The p(2×2)-disorder and c(2×2)-disorder transitions appear to be continuous (second-order) over the range observed. The character of the p(2×2)−c(2×2) transition may also be continuous but this cannot be unambiguously determined from the data. Symmetry arguments predict the Se/Ni(001) system to be a realization of the Ashkin-Teller model and thus make specific predictions which need to be confirmed in future studies. Good agreement with the phase diagram is obtained using a transfer matrix scaling calculation with up to fourth-nearest-neighbor pairwise interactions.     

Determination of the OH radical in atmospheric pressure dielectric barrier discharge plasmas using near infrared cavity ring-down spectroscopy

The hydroxyl radical (OH) plays an important role in combustion systems, atmospheric chemistry and the removal of air pollutants by non-thermal plasmas. The present work reports the determination of the hydroxyl radicals in atmospheric dielectric barrier discharge plasmas via near infrared continuous wave cavity ring-down spectroscopy. The P-branches of OH X²Π_i (ν' = 2 ←ν^′′ = 0) bands were used for its number density measurements. The minimum measurable absorption coefficient is about 3 × 10^-8 cm^-1 in DBD plasmas. At certain experimental conditions (a.c. frequency of 70 kHz, 6700 ppm H₂O in He, 1 atm), when the peak-to-peak discharge voltage varied from 6 kV to 10.4 kV, the determined OH radical concentration increased from (2.1 ± 0.1) × 10¹³ molecules cm^-3 to (3.7 ± 0.1) × 10¹³ molecules cm^-3. The plasma gas temperature, derived from the Boltzmann plots of OH rotational population distributions, ranged from 312 ± 10 K to 363 ± 10 K when the discharge voltage was raised in the above range. The influences of O₂ and N₂ addition on the production of OH radicals have been also investigated.