Kinetics of the b{su1}Σ{sk{su\s+}/{in{itg}}→\ga{su1}\gD{in{itg}} fluorescence of molecular oxygen in solutionsfluorescence of molecular oxygen in solutions

The kinetics of sensitized fluorescence of O₂ has been recorded for the first time in solutions at transition from the second singlet excited state b{su1}Σ{sk{su\s+}/{in{itg}} to the first excited state \ga{su1}\gD{in{itg}} (b→a. We measured the quantum yield of the b→a-fluorescence at γ≈1.93 μm and assessed its probability with respect to the a→ X-phosphorescence at 1.27 μm. We show that the lifetime of the b→a-fluorescence (105 nsec for CCl₄ and 140 nsec for CS₂) becomes much shorter on addition of solvents with large frequencies of intramolecular vibrations. The measured radiative velocity constant of the b→a-transition K_b→a is by three orders of magnitude larger than for the phosphorescence (≈1.27 μm) of the a→X-transition from the first singlet to the ground triplet state. The method of recording IR fluorescence is promising for determining O₂ in solutions and biosystems. Institute of Molecular and Atomic Physics of the National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp 5–8, January–February, 1998.     

Applicability of approximate methods of calculation of the frequency-contrast characteristics of aerosol layers within the wavelength range of 0.4–14 μm

The spectral dependences of the optical characteristics governing radiation transfer in scattering media are analyzed within the wavelength range of 0.4–14 μm for three types of aerosols. The wavelength ranges where approximate methods of calculation of frequency-contrast characteristics are applicable are established; the corresponding limitting masses of aerosol particles in a layer per unit of surface area are determined for which approximate methods provide acceptable accuracy. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 70 F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 419–425 May–June, 1998.     

Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots

Spectral dependences of the coefficients of absorption by free carriers and of multiphoton absorption by a silicon lattice in the region of the interstitial oxygen band at 5.8 μm are established. A procedure for measurement of the distribution of oxygen and alloying impurities in silicon ingots is given. The effectiveness of the spectrometers developed for controlling the segregation of impurities and nonstationary convection of the silicon melt in growing ingots by the Czochralski method is shown. Belarusian State University, 4, F. Skorina Ave., Minsk, 220080, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 655–659, September–October, 1997.     

Influence of laser heating on the optical properties of a superhigh-modulus organoplastic material

The degree and azimuth of polarization and the indicatrix of the intensity of radiation (λ=0.63 μm) reflected by the surface of a monodirectional superhigh-modulus organoplastic material after structural transformations induced in it by CO₂-laser radiation are measured. It is shown that the space-polarization characteristics of the radiation reflected by the organoplastic material charred as a result of laser heating correspond to the parameters of radiation scattered by a nontransparent material with an isotropic surface in the approximation of geometrical optics. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 635–639, September–October, 1999.     

Remote spectrophotometry as applied to determination of the degree of mineralization of peat soils in polesie

Regression relations between the first main component, slope of the SBC curve towards the wavelength axis, and the degree of mineralization of peat soils are established from experimental data. Errors in determination of peat soil productivity are estimated using different spectral indices. For practical use it is recommended to measure the spectral brightness coefficients of peat soils in the 0.50–0.75 μm range. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 102–106, January–February, 1998.     

Transformation of radiation-induced defects responsible for theF-band of absorption in NaF crystals subjected to irradiation with light and annealing

It has been found that the F-band of optical absorption which is observed in ψ-irradiated NaF crystals consists of three overlapping bands. The band at 345 nm of width 40 nm is independent of the impurity composition of the crystals; it disappears upon exposure to radiation at 345 nm and appears again upon annealing at 460±15 K for 15 min. This band is correlatable in intensity with the superfine structure of an EPR spectrum. The width (65–110 nm) and the spectral position (355–375 nm) of the second band depend on the impurity composition of the crystal. The band of width 90–110 nm at 320–325 nm disappears upon annealing and appears after exposure to light simultaneously with the disappearance of an EPR signal. It is established that the band at 345 nm is caused by quasimolecules based on fluorine atoms, that at 355–375 nm is triggered by F-centers with a different impurity composition near the haloid vacancy, and the band at 320–325 nm owes its appearance to F-centers in a negatively charged state (F′). Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70 F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 6, pp. 849–853, November–December, 1999.     

Photoelectric coupling in silicon multielement phototransistor structures

The spectral dependence of the coefficient of photoelectric coupling between photosensitive elements in rulers of silicon bipolar transistors is investigated. It is shown that in the spectral range 0.5–1.0 μm with weak radiation power the coefficient of photoelectric coupling in bipolar phototransistors with separate bases is lower than in photodiode rulers. Institute of Electronics, National Academy of Sciences of Belarus, 22, Logoiskii Trakt, Minsk, 220090, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 293]2-295, March–April, 1998.     

Shaping dynamics and structure of large-scale surface plasma formations under single-pulse laser action on various materials

It is established that, in the case of laser action on materials in large illuminated spots in atmospheric-pressure air for a laser radiation power density q≤2 MW/cm² (λ=1.315 μm), an evaporative regime with plane scattering of the laser-produced erosion plasma is realized while, for q≈5–17 MW/cm², the plasma front is transferred to the air, leading to plasma screening of the target and shaping of a subsonic radiation wave in the air. As the duration of the laser pulses increases (τ∼160 μsec), in spite of the large illuminated spots (S∼150 cm²) the evaporative regime of the laser action with plane plasma scattering goes over into a regime with jet outlow and formation of a quasistationary shock wave. Deceased. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 261–268, March–April, 1998.     

Band structure of electronic levels and the formation of the fluorescence spectra of polar compounds in polar media

The paper sets out a statistical theory of the effect exerted by interactions of constant dipoles in solutions on the fluorescence spectra of polar compounds. The theory is based on the concept of band structure of the electronic levels of a polar impurity (dissolved) molecule in polar media. Institute of Molecular and Atomic Physics, Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 2, pp. 209–216, March–April, 1997.     

A two-frequency He−Ne laser at the 3S 2→3P 4 transition in mutually orthogonal transverse magnetic fields

By taking as an example a He−Ne laser that operates at the 3S₂−3P₄ transition (λ=3.39 μm), we studied the specific features of nonlinear interaction of the waves of linear orthogonal polarizations in a transverse magnetic field. Using mutually orthogonal transverse magnetic fields on the neighboring portions of an active medium, we implemented a regime of two-frequency generation, which was investigated theoretically and experimentally. To whom correspondence should be addressed. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 4, pp. 568–573, July–August, 1999.     

Remote detection of sulfur dioxide by means of a CO2 laser

The possibility of remote detection of SO₂ in the 9-μm region of the spectrum by means of a TEA CO₂ laser was theoretically and experimentally investigated with regard to the real state of the atmosphere and the contribution of background concentrations of H₂O, CO₂ and NH₃ to absorption. For sounding along short paths (2L=2 km), the method of detection of small concentrations of SO₂ (at the MPC level) with the use of the lines of the CO₂-molecule regular transitions (00^o1–02^o0 band) has been devised and experimentally tested. It is shown that in sounding along longer paths (2L=6 km), a noticeable increase in sensitivity can be achieved by the generation lines of the CO₂-molecule sequential 00^o2–02^o1 band. B. I. Stepanov Institute of Physics of the National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 508–515, July–August, 1998.     

A measuring system for reflection coefficient investigations of materials heated by CO2-laser radiation in a controllable atmosphere

An experimental system is described which is intended for measurements of reflection coefficients at wavelengths of 0.63; 1.15; 3.39, and 10.6 μm and of the thermodynamic temperature of the surface of materials heated in air or in an inert atmosphere at pressures from 1.3·10² to 1.3·10⁵ Pa. An analysis of the errors in reflection coefficient and temperature measurements is made. B. I. Stepanov Institute of the Physics of the National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 608–611, July–August, 1998.     

Chalcogenide glasses as a medium for controlling ultrashort IR pulses: Part I

Chalcogenide glasses are ideal materials for developing fiber lasers and amplifiers, remote sensors, high-speed switches, and other devices that operate in the IR range of 1–10 μm. The nonlinear refractive index of chalcogenide glasses may exceed that of quartz glass by a factor of 100–1200 or even more. The data on the dispersion properties of some chalcogenide glass compositions in the IR range are presented. The possibility of forming waveguide structures with specified dispersion properties (in particular with a fixed wavelength at which the group velocity dispersion is zero) from these glasses is numerically investigated. It is shown by the example of completely glassy periodic waveguide structures with planar geometry that the use of photonic band gap modes makes it possible the change the position of zero dispersion in a wide wavelength range. In the calculations the contrast of waveguide structures was varied using parameters of glasses of different composition.     

Dynamics of erosion plasma formation and formation of a plasma flame with a condensed disperse phase when quasi-continuous laser radiation acts on bismuth

The dynamics of near-surface plasma formation and the formation of an erosion plasma flame was investigated for quasi-continuous laser radiation (λ=1.06 μm, q=0.1–10 MW/cm², τ∼1.5 msec) acting on bismuth targets in air. The absence of low-threshold plasma formation at q<2 MW/cm² was established and explained. Instabilities in the plasma formation were revealed and the range of laser radiation power densities (2≤q≤4 MW/cm²) at which these instabilities take place was determined. At q≥5.4 MW/cm², brightening of the flame was noted. The dependence of the luminescence temperature of the flame on the laser radiation power density q was determined. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 126–133, January–February, 1998.     

5-μm vertical external-cavity surface-emitting laser (VECSEL) for spectroscopic applications

Mid-IR tunable VECSELs (Vertical External-Cavity Surface-Emitting Lasers) emitting at 4–7 μm wavelengths and suitable for spectroscopic sensing applications are described. They are realized with lead-chalcogenide (IV–VI) narrow band gap materials.     

Extra-liganding effects in Zn-octaethylporphyrin solutions in a temperature interval of 300-77 K

It is established experimentally for the first time that Zn-octaethylporphyrin in a solution of dried methyl cyclohexane is in unliganded form in the temperature interval of 293-77 K. This form is characterized by the shortest-wave position of absorption and luminescence spectra, the independence of the degrees of fluorescence and phosphorescence polarizations from the excitation wavelength, and high phosphorescence time (τ_T=126 μsec) and quantum yield (φp=0.085) at 77 K. Adding electrodonor components to the methyl cyclohexane or going over to alcohol-containing polar media leads to the formation of a monoliganded form of ZnOEP, for which we observe a bathochromic shift of ≈150–350 cm⁻¹ for Q(0,0) absorption and luminescence bands, a splitting of ≈50–100 cm⁻² for the Q(0, 0) absorption band, and phosphorescence quenching (τ_T=60 μsec, φp=0.05-0.03 at 77 K). The effects revealed are explained by a decrease in the symmetry of a ZnOEP molecule in extra liganding and by an increase in the probability of nonradiative activation for a T₁-state due to the extra ligand being involved in the exchange of electron-excitation energy and to the enhancement of a spin-orbital coupling as a result of the disturbance of the planarity, of a macrocycle. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 6, pp. 900–907, November–December, 1998.     

An In4(Se3)1−x Te3x solid solution as a material for absorption optical filters

We suggest using crystals of the In₄(Se₃)_1−xTe_3x solid solution for manufacturing absorption optical filters with the boundary wavelength regulated from 1.7 to 2.5 μm by changing the composition of the solution. The refractive index is determined for different compositions, and the possibility of making the filters antireflecting is shown. The advantages of the proposed filters are connected with the specific features of the absorption edge of crystals and their structure. To whom correspondence should be addressed. Chernovtsy State University, 2, Kotsyubinskii Str., Chernovtsy, 274012, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 4, pp. 577–579, July–August, 1999.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Spectral studies of the structure of copper phthalocyanin-polyimide composites produced by vacuum deposition

Visible and IR absorption spectra are studied for copper phthalocyanin (CuPc)-polyyimide composites. The composite films are obtained by vacuum codeposition of CuPc, pyromellitedianhydride, and diaminodiphenyloxide followed by temperature-induced imidization. On the basis of IR spectra it is shown that in the prepared composites imidization occurs over the whole CuPc concentration range (10–90%). From the visible spectra it is found that CuPc is deposited mainly in the form of a-microcrystals, which are destroyed during imidization to produce noncrystalline molecular aggregates. Subsequent heat treatment (320–350°C) gives rise to CuPc β-microscrystals. A. N. Sevchenko Research Institute of Applied Physical Problems, 7, Kurchatov St., 220064, Minsk, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 502–506, July–August, 1997.     

Infrared transmissivity of heavily doped contact layers on extrinsic silicon IR-detectors

The infrared transmissivity of heavily dopedp-type contact layers on silicon was studied in the 3–5 μm and 8–14 μm wavelength range in order to optimise the layer thickness and doping concentration for antireflection coating. The transmissivity of surface layers and buried layers was computed taking into account the free carrier optical dispersion by the Drude theory and corrections due to intervalence band transitions as well as multiple reflections and interferences in the layer. The computations are in quantitative agreement with measurements on contact layers formed by multiple boron implantation. It was found that the free carrier absorption loss completely cancels the gain due to the antireflection effect for a surface layer. Transmissivities of around 73% may be obtained by a buried heavily doped layer.