共查询到20条相似文献,搜索用时 15 毫秒
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The characteristic growth features observed on the top free surface of InBi single crystals grown by the zone-melting method are reported. These features are analysed by stereographic technique and a possible mechanism responsible for the appearance of the characteristic growth features is discussed. A new etchant capable of revealing dislocations inclined to the cleavage plane is also reported. 相似文献
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采用垂直布里奇曼法生长了尺寸为φ30 mm×120 mm的Cd0.8Mn0.2Te晶锭.采用X射线粉末衍射及X射线双晶摇摆曲线分析了晶体的结构与结晶质量,结果显示所生长的晶体为单一立方闪锌矿结构,半峰宽为47.2aresec,结晶质量良好.采用化学腐蚀方法显示了晶体中的多种缺陷,包括位错,Te夹杂和孪晶.采用光学显微镜,扫描电镜和X射线能谱仪对缺陷形态和分布进行了研究.结果表明,晶体中位错密度在105~106cm-2之间.晶体局部存在Te夹杂相,尺寸为l~5μm.晶体中孪晶主要以共格孪晶存在.并提出了缺陷形成的原因和减少缺陷的方法. 相似文献
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利用单温区机械振荡法合成出高纯单相AgGa0.2In0.8Se2多晶,单次合成量超过400 g;DSC测试结果显示其熔点为782℃,结晶温度为771℃.利用坩埚下降法在小温度梯度(2℃/cm)下生长出尺寸为φ25 mm× 75 mm高品质无开裂AgGa0.2In0.8Se2单晶.解离面(112)面摇摆曲线半峰宽为0.056°.厚度为3 mm双面抛光的(112)面晶片在1.5~18 μm波段透过率为65.0; ~ 67.5;,表明所生长AgGa0.2In0.8Se2晶体具有较低的吸收系数,为0.01 ~0.1之间. 相似文献
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本文采用物理气相传输法对不同衬底温度和温差下制备的氮化铝(AlN)晶体形貌进行研究,研究结果表明AlN晶体生长受到AlN晶面表面能、Al基元平均动能和AlN晶体表面极性的共同影响。当温差为60℃时, AlN晶体(0001)面生长速率小于(10-10)面,AlN以带状形式生长。将该工艺应用于AlN同质生长中,研究结果表明:温差为60℃时AlN晶体(0001)面呈现畴生长模式,该晶体质量最差;温差为35℃时AlN晶体(0001)面呈现台阶流生长模式,该晶体质量最优;温差为20℃时AlN晶体(0001)面呈现台阶簇生长模式,该晶体容易开裂。通过工艺优化最终获得了直径为40 mm AlN单晶衬底,完全满足器件制备需求。 相似文献
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Troyanchuk I. O. Bushinsky M. V. Tereshko N. V. Sikolenko V. V. Ritter C. 《Crystallography Reports》2019,64(6):975-978
Crystallography Reports - The crystal structure and magnetic state of Sr0.8Y0.2CoO2.65 layered perovskite have been studied using neutron diffraction and synchrotron radiation diffraction and... 相似文献
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Rhombic single crystals of bariumchromate were grown in silica gels up to 1.5 mm in size. The influence of the initial pH-value of the gel and the kind and concentration of reactants are studied. The crystal structure has been determined. The compound crystallizes in space group Pnma, with cell dimensions a = 9.113(4) Å, b = 5.528(3) Å, c = 7.336(4) Å and Z = 4. The structure was refined to R = 0.062 on the basis of 364 reflections. Every barium atome, centered in a distorted archimedian antiprism, is coordinated to 8 oxygen atoms each belonging to a chromate tetrahedron. Interatomic distances and bond angles were calculated. 相似文献
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采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备.通过优化热场,可重复生长出非掺和掺Te 整锭(100)单晶,单晶锭的重量为5~8 kg, 成晶率可达80;以上.4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm-2,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好.晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性.经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片.通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底. 相似文献
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Zhen-Hui Li Wei-Tang Li Jun Liu Shi-Fu Zhu Bei-Jun Zhao Shu-Jun Yin Guan-Xion Chen Hong Yuan Hua-Peng Xu 《Crystal Research and Technology》1996,31(8):979-983
The HgI2 single crystal with few large smooth faces, high quality and 360 g in weight has been grown by a new technique of modified vapour phase located point method, and the growth characteristics of HgI2 single crystals have been investigated in detail. It is found by means of X-ray diffraction that the crystals grown with the c-axis parallel or perpendicular to the pedestal plane have both the prism faces {110}. 相似文献
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氮化镓(GaN)具有高击穿场强、高饱和电子漂移速率、抗辐射能力强和良好的化学稳定性等优良特性,是制作宽波谱、高功率、高效率光电子、电力电子和微电子的理想衬底材料。除气相法(包括HVPE(氢化物气相外延)、MOCVD(金属有机化合物化学气相沉淀)、MBE(分子束外延))生长GaN单晶外,液相法(包括氨热法和助熔剂法)近几年在制备GaN单晶方面取得了较大的进展。本文介绍了氨热法和助熔剂法的生长原理、装备特点及生长习性;综述了两种液相生长方法的研究历程及研究进展,并对液相法生长GaN单晶的发展趋势及主要挑战进行了展望。 相似文献
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采用重结晶技术,对CdSiP2多晶进行快速下降提纯,以提纯后的晶锭为原料,利用改进的垂直布里奇曼法生长出CdSiP2单晶体,尺寸达φ18 mm×51 mm.经能量色散仪(EDS),X射线衍射(XRD),X射线光电子能谱(XPS)以及电感耦合等离子体光谱仪(ICP)测试表明,重结晶提纯能有效降低CdSiP2多晶中Fe、Mn等影响晶体性能的微量元素含量,获得高纯四方黄铜矿结构的CdSiP2多晶材料.采用X射线衍射仪和红外傅立叶变换分光光度计分别对生长的CdSiP2单晶体自然解理面与厚度2 mm的CdSiP2晶片进行测试,获得了{101}晶面族六级衍射峰,晶片在2~7μm波段范围的红外透过率高于53;,对应的吸收系数低于0.09 cm-1.上述研究结果表明,采用提纯后原料生长的CdSiP2单晶体结晶性好,光学性能优良,可进一步用于制作CdSiP2激光频率转换器件. 相似文献
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G. A. Gamal M. M. Nassary S. A. Hussein A. T. Nagat 《Crystal Research and Technology》1992,27(5):629-635
Single crystals of GaTe were prepared in our laboratory by a special modified Bridgman technique method. Measurements of the electrical conductivity and Hall effect between 210 and 450 K were carried out on GaTe samples in two crystallographic directions. The Hall coefficient is positive and varies with the crystallographic direction. A unique mobility behaviour and strong anistropy in the carrier mobility were observed. The Hall mobilities parallel and perpendicular to the C-axis, at room temperature, were 12 cm/V · s and 25.12 cm2/V ·s, respectively. The free carrier concentration lies between 1013 − 1014 cm−3 at room temperature. 相似文献
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Bei-Jun Zhao Shi-Fu Zhu Feng-Liang Yu Hong-Yu Li De-You Gao Zheng-Hui Li 《Crystal Research and Technology》1998,33(6):943-948
A modified two temperature vapor transport procedure has been used to synthesize AgGaS2 polycrystalline materials at 1060 °C from high-purity Ag, Ga, S elements. The results showed that the polycrystalline materials are pure single phase AgGaS2 by X-ray powder diffraction analysis. The polycrystalline ingot includes a few interior voids and has a high mass density. The AgGaS2 ingot with 12 mm in diameter and 20 mm in length has been grown by the modified Bridgman technique in two-zone vertical furnace. As-grown AgGaS2 ingot was characterized by the X-ray diffraction technique, obtained the rocking curve of the crystal (011) face, it is shown that the ingot is AgGaS2 single crystal. The infrared transparent of the crystal at 2 ∼ 10μm is 49% (and absorption coefficient is 0.74 cm—1). 相似文献