Tuning the dispersion of 4f bands in the heavy-fermion material YbRh2Si2

Localized Yb 4f and itinerant Rh 4d states are subject to substantial hybridization effects in the heavy-fermion material YbRh₂Si₂. The proximity to the Fermi level and the high anisotropy in k space naturally raise questions regarding the role of these hybridization effects for the observed, unusual physical properties. Using angle-resolved photoemission spectroscopy (ARPES) we found that the non-dispersive behavior of the localized Yb f states is broken around the Γ point due to interaction with approaching Rh 4d bands. The intriguing point here is that the hybridization strength turns out to be systematically tunable by electron doping of the material. Gradual deposition of silver atoms onto the atomically clean, silicon terminated surface of YbRh₂Si₂ leads to transfer of Ag 5s charge into the Rh 4d bands. This substantially changes the energy overlap, and thus the hybridization strength, between the interacting Yb 4f and Rh 4d bands in the surface and subsurface region. The shown possibility to control the variation of the f-d hybridization at the surface of heavy-fermion materials may also be helpful for other ARPES studies on the diverse phenomena in electron-correlated materials.     

The surface state of URu2Si2

The ‘hidden-order’ (HO) transition of URu₂Si₂ remains a puzzle after 25 years of research. Using high-resolution angle-resolved photoemission spectroscopy (ARPES) we found that a hole-like band around Γ having its band maximum at E = −35 meV, and previously thought to be a bulk band of the system, is indeed a surface state not related to the HO phase transition. Here we present our detailed investigations to assign that state to a surface feature, and discuss on the possible origins of this surface band.     

Theoretical investigation of ESR spectra and local structure for VO in Ba2Zn(HCOO)6(H2O)

The electron spin resonance spectra (characterized by g factors g_, g_⊥ and hyperfine structure constants A_ and A_⊥) of Ba₂Zn(HCOO)₆(H₂O) (BZFA): VO²⁺ crystal are calculated from high order perturbation formulas. The calculated results are in good agreement with the observed values. The local structure parameters of [VO(H₂O)₅]²⁺ clusters are also obtained from the calculation. The magnitudes of the metal-ligand distances parallel and perpendicular to the C₄-axis are, respectively, R_≈0.163 nm and R_⊥≈0.210 nm. It is shown that the local structure around the V⁴⁺ ion possesses a compressed tetragonal distortion along C₄-axis.     

Spin pumping at the Co2FeAl0.5Si0.5/Pt interface

Spin pumping at the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces has been studied by ferromagnetic resonance technology(FMR). The spin mixing conductance of the Co2FeAl0.5Si0.5/Pt and Pt/Co2FeAl0.5Si0.5 interfaces was determined to be 3.7×1019m 2and 2.1×1019m 2 by comparing the Gilbert damping in a Co2FeAl0.5Si0.5single film, Co2FeAl0.5Si0.5/Pt bilayer film and a Pt/Co2FeAl0.5Si0.5/Pt trilayer film. Spin pumping is more efficient in the Co2FeAl0.5Si0.5/Pt bilayer film than in permalloy/Pt bilayer film.     

Investigation of defect centres responsible for TL/OSL in MgAl2O4:Tb

Magnesium aluminate doped with Tb³⁺ (MgAl₂O₄:Tb³⁺) was prepared by combustion synthesis. Three thermoluminsence (TL) peaks at 120, 220 and 340 °C were observed. PL and TL emission spectrum shows that Tb³⁺ acts as the luminescent centre. Optically stimulated luminescence (OSL) was observed when stimulated by 470 nm blue light.Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the TL and OSL processes in MgAl₂O₄:Tb³⁺. Two defect centres were identified in irradiated MgAl₂O₄:Tb³⁺ phosphor by ESR measurements which was carried out at room temperature and these were assigned to V and F⁺ centres. V centre (hole centre) is correlated to 120 and 220 °C TL peaks and F⁺ centre (electron centre), which acts as a recombination centre is correlated to 120, 220 and 340 °C.     

Microstructural changes in Fe-doped Gd5Si2Ge2

Gd₅Si₂Ge₂-based alloys can exhibit a giant magnetocaloric effect (GMCE); this gives them the potential for use in cooling technologies. It has also been reported that a small addition of iron reduces the hysteresis losses in Gd₅Si₂Ge₂-based alloys, thus increasing the net refrigerating capacity. In this investigation, we have been the first to look at the effect on the microstructure and magnetic properties of Gd₅Si₂Ge₂ resulting from a wide range of substitutions of Si by Fe. The macrostructures of the arc-melted buttons revealed some very unusual surface morphologies, and the analytical results revealed a gradual substitution of the Gd₅(Si,Ge,Fe)₄-type phase by a Gd₅(Si,Ge,Fe)₃-type phase and the presence of three grain-boundary phases, two of which contain substantial amounts of iron. The magnetic measurements indicated that larger amounts of iron reduced the hysteresis losses, but at the same time reduced the Curie temperatures to below lower values that would make the material useful in practice.     

Magnetic characterization of Mn5SiB2 and Mn5Si3 phases

In this work the Mn₅Si₃ and Mn₅SiB₂ phases were produced via arc melting and heat treatment at 1000 °C for 50 h under argon. A detailed microstructure characterization indicated the formation of single-phase Mn₅Si₃ and near single-phase Mn₅SiB₂ microstructures. The magnetic behavior of the Mn₅Si₃ phase was investigated and the results are in agreement with previous data from the literature, which indicates the existence of two anti-ferromagnetic structures for temperatures below 98 K. The Mn₅SiB₂ phase shows a ferromagnetic behavior presenting a saturation magnetization M_s of about 5.35×10⁵ A/m (0.67 T) at room temperature and an estimated Curie temperature between 470 and 490 K. In addition, AC susceptibility data indicates no evidence of any other magnetic ordering in 4-300 K temperature range. The magnetization values are smaller than that calculated using the magnetic moment from previous literature NMR results. This result suggests a probable ferrimagnetic arrangement of the Mn moments.     

TSL, OSL and ESR studies in ZnAl2O4:Tb phosphor

ZnAl₂O₄:Tb phosphor was prepared by combustion synthesis. ZnAl₂O₄:Tb exhibits three thermally stimulated luminescence (TSL) peaks around 150, 275 and 350 °C. ZnAl₂O₄:Tb exhibits optically stimulated luminescence (OSL) when stimulated with 470 nm light.Electron spin resonance (ESR) studies were carried out to identify defect centres responsible for TSL peaks observed in ZnAl₂O₄:Tb. Two defect centres are identified in irradiated ZnAl₂O₄:Tb phosphor and these centres are assigned to V and F⁺ centres. V centre appears to correlate with the 150 °C TSL peak, while F⁺ centre could not be associated with the observed TSL peaks.     

Low temperature magnetism of Cd-doped Ce2RhIn8 heavy fermion antiferromagnet

We report the low temperature magnetic properties of Cd-doped single crystals of Ce₂RhIn₈ grown from In-flux. Measurements of temperature-dependent magnetic susceptibility, heat capacity, electrical resistivity and X-ray magnetic scattering revealed that Cd-doping enhances the antiferromagnetic ordering temperature from for crystals with nominal Cd-concentration of ~20%. Similarly to the pure compound, Cd-doped Ce₂RhIn₈ presents just below T_N a commensurate antiferromagnetic structure with a propagation vector . Comparisons between our results and the general effects of Cd-doping on the single layer related family CeMIn₅ (M=Co, Rh and Ir) will also be given.     

Anomalous upper critical field in ternary iron-silicide superconductor Lu2Fe3Si5

We report the upper critical field H_c2 in a ternary iron-silicide superconductor Lu₂Fe₃Si₅ with T_c  6 K obtained by the resistivity measurements. We find that H_c2 increases linearly with decreasing temperature down to T_c/3, and H_c2(T = 0) exceeds the orbital depairing field described by the Werthamer–Helfand–Hohenberg theory. We also find that the anisotropy of H_c2 is nearly independent of temperature and the angular dependence of H_c2 is well-described by the anisotropic Ginzburg–Landau model. These results strongly indicate the presence of two distinct superconducting gaps in Lu₂Fe₃Si₅ although the behavior is slightly different from that of the typical two-gap superconductor MgB₂.     

Non-magnetic impurity effect in two-gap superconductor Lu2Fe3Si5

We report detailed study of non-magnetic impurity effects in a two-gap superconductor Lu₂Fe₃Si₅ by replacing Lu with Sc. We find that the superconducting transition temperature T_c is drastically suppressed by slight substitution of Sc, while lattice constants change linearly with the substitution. These results strongly indicate that a slight substitution of Sc increases the inter-band scattering and causes averaging the amplitude of two gaps, which leads to the drastic suppression of T_c.     

Crystal structure and magnetic properties of Nd（Mn1-xFex）2Si2 compounds

X-ray powder diffraction,resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 ≤ x ≤ 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm.The field-cooled temperature dependence of the magnetization curves shows that,at low temperatures,NdFe2Si2 is antiferromagnetic,while the other compounds show ferromagnetic behaviour.The substitution of Fe for Mn leads to a decrease in lattice parameters a,c and unit-cell volume V .The Curie temperature of the compounds first increases,reaches a maximum around x = 0.7,then decreases with Fe content.However,the saturation magnetization decreases monotonically with increasing Fe content.This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe.The temperature’s square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature,which is typical of simple metals.     

Submillimeter wave ESR measurements of metamagnetic Y2Cu2O5

Submillimeter wave ESR system in Kobe University is presented. It covers the frequency region from 60 to 383GHz and can apply the pulsed magnetic field up to 30T. The measurement of Y₂Cu₂O₅ single crystals using our system is presented.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

Acetate reduction synthesis of Sr2Si5N8:Eu phosphor and its luminescence properties

A novel synthesis method was developed for the efficient red phosphor, Eu²⁺-activated Sr₂Si₅N₈, by employing the strontium acetate as both the reducing agent and strontium source. The phase purity of final product was strongly dependent on the heating rate of the precursors. Sr₂Si₅N₈:Eu²⁺ (2 at%) phosphor presented a broadband excitation spectrum in the range 300–500 nm, matching well with the blue emission (400/460 nm) of current InGaN light-emitting diodes (LEDs). The red emission peaking at 619 nm gave the relatively high (about 155%) intensity compared with the Y₃Al₅O₁₂ (YAG) (P46-Y3) standard phosphor. In addition, the saturated chromatic coordinates (0.638, 0.359) allowed it a promising candidate as a red phosphor in white LEDs application for illumination or display.     

Non-Fermi liquid behavior in polycrystalline Ce2PdIn8

We report on the formation of a novel ternary compound Ce₂PdIn₈ that is isostructural with the heavy-fermion superconductors Ce₂CoIn₈ and Ce₂RhIn₈. Its magnetic, electrical transport and thermodynamic properties were studied on polycrystalline samples in wide ranges of temperature and magnetic field strength. The results revealed Ce₂PdIn₈ to be a paramagnetic Kondo lattice with a coherence temperature of about 12 K. The C/T ratio of the specific heat reaches at 350 mK a strongly enhanced magnitude of about per Ce-atom, thus clearly indicating a heavy-fermion nature of this material. Moreover, a logarithmic divergence of C/T vs. T, observed below 3 K, which is accompanied by a linear temperature dependence of the electrical resistivity below 6 K, hint at a non-Fermi liquid character of the electronic ground state in the new compound reported.     

XPS investigation of diffusion of two-layer ZrO2/SiO2 and SiO2/ZrO2 sol–gel films

Two-layer ZrO₂/SiO₂ and SiO₂/ZrO₂ films were deposited on K9 glass substrates by sol–gel dip coating method. X-ray photoelectron spectroscopy (XPS) technique was used to investigate the diffusion of ZrO₂/SiO₂ and SiO₂/ZrO₂ films. To explain the difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films, porous ratio and surface morphology of monolayer SiO₂ and ZrO₂ films were analyzed by using ellipsometry and atomic force microscopy (AFM). We found that for the ZrO₂/SiO₂ films there was a diffusion layer with a certain thickness and the atomic concentrations of Si and Zr changed rapidly; for the SiO₂/ZrO₂ films, the atomic concentrations of Si and Zr changed relatively slowly, and the ZrO₂ layer had diffused through the entire SiO₂ layer. The difference of diffusion between ZrO₂/SiO₂ and SiO₂/ZrO₂ films was influenced by the microstructure of SiO₂ and ZrO₂.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.