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The mean adsorption lifetimes of F, Cl and Br on (100) and (111) Mo surfaces have been obtained from the first order desorption kinetics observed in low converage conditions (θ < 10^?2 of a monolayer) using a pulsed ionic beam method. The mean adsorption lifetimes τ fit a general expression $\text{τ = τ}{}_0\text{exp}\text{(}\text{E}\text{kT}\text{)}$ in a large temperature range (1700–2400 K) allowing the determination of the binding energies E. The main results of this study are (1) the binding energies decrease from F through Br; (2) the binding energies on both (100) and (111) orientations are similar, E(F)～4.65 eV, E(Cl)～4.15 eV, and E(Br)～3.65 eV. These results are discussed and compared with those previously reported on (100) and (111) Nb and W surfaces. The close binding energies of F, Cl and Br on (100) and (111)^?Nb and Mo surfaces suggest that halogens have a different chemisorption behaviour with respect to O and N.     

Desorption of halogens from Nb,Mo, Ta and W polycrystalline surfaces

The desorption kinetics of halogens from Nb, Ta, Mo and W polycrystalline surfaces are studied, at low coverage (Θ ? 10^?2 of a monolayer) and high temperature (1800–2400 K), using a pulsed ionic beam method. For a relatively high energy incident positive ion beam (? = 2500 eV), the diffusion kinetics of implanted Br and I ions towards the surface are observed. At low energy (? < 500 eV), a first order kinetic corresponding to the desorption of halogens from these surfaces is found. Preliminary results are given on the desorption energy and the preexponential factor of halogens adsorbed on Nb, Mo, Ta and W polycrystalline surfaces. The main result of this systematic study is that the mean adsorption lifetime for a given temperature, as the desorption energy decreases for F through I on all of the studied surfaces. A similarity between Nb and Ta, as between Mo and W surfaces for the desorption energies of halogens is also found.     

Desorption kinetics and directional dependence of the surface diffusion of potassium on stepped W(100) surfaces

Using a surface ionisation ion microscope the desorption parameters and the diffusion constant of potassium were measured on stepped W(100) surfaces. The activation energy of ionic desorption as well as the corresponding prefactor do not depend on the step density; the mean adsorption lifetime τ can be expressed as τ=1.6×10^?14s exp(2.44 eV/kT).Whereas the surface diffusion of potassium on “flat” W(100) and on W(S)-[9(100)×(110)] was found to be isotropic, on W(S)- [5(100)×(110)] and W(S)-[3(100)×(110)] it occurs preferentially parallel to the step direction. The diffusion constant D_∥ for this direction has roughly the same value for all investigated surfaces: D_∥=7.8×10^?2 cm²s^?1 exp(?0.42 eV/kT). For the direction perpendicular to the steps D⊥ depends on the step density, whereby the activation energy as well as the prefactor increase with increasing step density.     

Mass spectrometry study of the kinetics of CdTe molecular-beam epitaxy: Part I. Cd, Te2, and CdTe

Surface processes in CdTe molecular-beam epitaxy were studied using in situ mass spectrometry. Modulated molecular Cd and Te₂ beams were used for measuring kinetic parameters. The experiments were performed at crystal temperatures of 600–730 K. The results were processed within a model in which condensation and evaporation occur through adsorption and desorption stages. The desorption rate was 2–10 s^?1 for Te₂ and more than 30 s^?1 for Cd. The CdTe evaporation activation energy and desorption energies were determined as E _ev = 1.1 eV, E _d (Cd) = 1.0 eV, and E _d (Te) = 0.6 eV. The adsorbate coverage was estimated as n(Cd) < 0.01 and n(Te) = 0.1–1 Te.     

Linear and nonlinear optical spectroscopy of gadolinium iron borate GdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The optical spectra and the second-harmonic generation (SHG) are studied in a noncentrosymmetric GdFe₃(BO₃)₄ magnet. In the region of weak absorption (α～20–400 cm^?1) below ～3 eV, three absorption bands are distinguished, which can be unambiguously assigned to forbidden electronic transitions from the ground ⁶A₁ state of the Fe³⁺ ion to its excited states ⁴T₁(～1.4 eV), ⁴T₂(～2 eV), and ⁴A₁, ⁴E(～2.8 eV). Intense absorption begins in the region above 3 eV (α～2–4×10⁵ cm^?1), where two bands at ～4.0 and 4.8 eV are observed, which are caused by allowed electric dipole charge-transfer transitions. The spectral features of SHG in the 1.2–3.0-eV region are explained by a change in the SHG efficiency caused by a change in the phase mismatch. It is shown that in the weak absorption region, phase matching can be achieved for SHG.     

Evaluation of plasmon-loss spectra of molybdenum using elastic-peak electron spectroscopy

Plasmon-loss spectra of clean polycrystalline molybdenum surfaces have been determined in the primary energy range E_p = 50–3000 eV. Spectra a distributions (nonderivative mode). A simplified model is described for evaluating plasmon-loss spectra using elastic-peak electron spectroscopy, as de of elastically reflected electrons is determined by integrating the N(E) spectrum of secondary and backscattered electrons. The ratio of the ar (23–24 eV) to that of the elastic peak is Pλ, the product of the probability for creating a volume plasmon loss and the inelastic mean free pat second plasmon-loss peak is (Pλ)². Evaluation of our experimental plasmon-loss spectra gives Pλ = 0.4–0.5 for E_p > 500 eV. Th constitutes ～50% of all losses determining the IMFP, interband loss processes being important in the remainder. For the low energy range, E_p found. For E_p < 100 eV, no volume plasmon-loss peak could be detected in our N(E) spectra. The simplified model proves to be valid fo plasmon-loss peak (11–12 eV), i.e., such that N_pls/N_e ? 10^?2. Some results are presented concerning surface plasmon losses as molybdenum surface.     

On the energy of the 8<Stack><Subscript>2</Subscript><Superscript>−</Superscript></Stack> 1479-keV level in <Superscript>178</Superscript>Hf

The difference in the 332-and 326-keV transition energies from ¹⁷⁸Ta decay is measured with a magnetic β spectrometer and a γ spectrometer. The energy of the 332-keV transition (E(332) = 331 607 ± 4 eV) and the energy of the 8 ₂ ^? 1479-keV level in ¹⁷⁸Hf (E(1479) = 1479001 ± 6 eV) are determined with high accuracy.     

Molecular binding states on clean and oxidized surfaces: SiO(g) + W(clean) and SiO(g) + W(oxidized)

The interactions between a molecular beam of SiO(g) and a clean and an oxidized tungsten surface were examined in the surface temperature range 600 to 1700 K by mass spectrometrically determined sticking probabilities, by flash desorption mass spectrometry (FDMS) and by Auger electron spectroscopy (AES). The sticking probability, S, of SiO has been determined as a function of coverage and of surface temperature for the clean and the oxidized tungsten surface. Over the temperature range studied and at zero coverage S = 1.0 and 0.88 for the clean and oxidized tungsten surfaces respectively. The results are consistent with both FDMS and AES. For coverage up to one monolayer there is one major adsorption state of SiO on the clean tungsten surface. FDMS shows that T_m = constant (T_m is the surface temperature at which the desorption rate is maximum) and that desorption from this state is described by a simple first order desorption process with activation energy, E_d = 85.3 kcal mole^?1 and pre-exponential factor, ν = 2.1 × 10¹⁴ sec^?1. AES shows that the 92 eV peak characteristic of silicon dominates. In contrast on the oxidized tungsten surface, T_m shifts to higher temperatures with increasing coverage. The data indicate a first order desorption process with a coverage dependent activation energy. At low coverage (θ ? 0.14) there is an adsorption state with E_d = 120 kcal mole^?1 and ν = 7.6 × 10¹⁹, while at θ = 1.0, E_d = 141 kcal mole^?1. This variation is interpreted as due to complex formation on the surface. AES shows that on oxidized tungsten, in contrast to clean tungsten, the dominant peaks occur at 64 and 78 eV, and these peaks are characteristic of higher oxidation states of silicon. Thus, it is concluded that SiO exists in different binding states on clean and oxidized tungsten surfaces.     

The adsorption of CO on Cu surfaces studied by electron energy loss spectroscopy

Electron energy loss spectroscopy (ELS) in the energy range of electronic transitions (primary energy 30 < E₀ < 50 eV, resolution ΔE ≈ 0.3 eV) has been used to study the adsorption of CO on polycrystalline surfaces and on the low index faces (100), (110), (111) of Cu at 80 K. Also LEED patterns were investigated and thermal desorption was analyzed by means of the temperature dependence of three losses near 9, 12 and 14 eV characteristic for adsorbed CO. The 12 and 14 eV losses occur on all Cu surfaces in the whole coverage range; they are interpreted in terms of intramolecular transitions of the CO. The 9 eV loss is sensitive to the crystallographic type of Cu surface and to the coverage with CO. The interpretation in terms of d(Cu) → 2π¹(CO) charge transfer transitions allows conclusions concerning the adsorption site geometry. The ELS results are consistent with information obtained from LEED. On the (100) surface CO adsorption enhances the intensity of a bulk electronic transition near 4 eV at E₀ < 50 eV. This effect is interpreted within the framework of dielectric theory for surface scattering on the basis of the Cu electron energy band scheme.     

Mass spectrometry study of the kinetics of CdTe molecular-beam epitaxy: Part II. Cd, Te2, Te, and CdTe

The results of an in situ mass-spectrometric study of surface processes occurring during CdTe molecular beam epitaxy are presented. The measurements of kinetic parameters are performed with modulated Cd and Te₂ molecular beams with an intensity of 0.1–5.0 ML/s at a crystal temperature of 550–730 K. The experimental results are treated using a model in which condensation and evaporation proceed through adsorption and desorption steps. The desorption rates are 2–15 and 150 s^?1 for Te₂ and Cd, respectively. The activation energy of CdTe “evaporation” is found to be 1.2 eV; the desorption energies are E _d(Cd) = 1.0 eV and E _d(Te₂) = 0.3 eV. The adsobate coverage with cadmium atoms and tellurium molecules is estimated to be n(Cd) < 0.01, n(Te₂) = 0.02–0.20, and n(Te) = 0.2–1.0.     

Interaction of aluminum with the rhenium surface: Adsorption, desorption, and growth of surface compounds

The interaction of aluminum with the ( $10\bar 10$ ) rhenium surface was studied experimentally within a broad temperature range, 300–2000 K. Surface aluminide (SA) ReAl with a concentration of adsorbed Al atoms N _Al=1.6×10¹⁵ cm^?2 was found to form. It was shown that aluminum escapes from the surface by thermal desorption at temperatures from 1300 to 1600 K, with the desorption activation energy changing abruptly from ～3.6 to ～4.2 eV when passing through the concentration corresponding to the SA.     

Electron impact desorption of Xe from the tungsten (110) plane

The electron stimulated desorption of Xe adsorbed on the clean and on oxygen and CO covered tungsten (110) surfaces has been investigated. Only neutral Xe desorption was observed; for Xe on clean W a very small initial regime with cross section 10^?17cm² is followed by a slow decay with cross section 3×10^?19cm². The Xe yield varies nonlinearly with coverage, suggesting desorption from edges of islands or from sites with less than their full complement of nearest neighbor Xe atoms. Desorption from oxygen or CO covered surfaces results in an apparent desorption cross section identical to that of the underlying adsorbate. This results from a kicking off of Xe by electron desorbed O or CO. The true cross sections for these processes are ～10^?14cm² for Xe-0 and ～10^?15 cm² for Xe-CO. Some speculations about the mechanism, particularly the absence of ions are presented.     

Isothermal desorption of indium from √31−In and √3−In on silicon (111) surfaces

Using RHEED (reflection high energy electron diffraction) techniques, superstructures of submonolayer indium films deposited on silicon (111) 7 × 7 surfaces have been investigated. Combination of the deposition experiments at a constant deposition rate and the desorption experiments under isothermal condition has yielded desorption energies and apparent vibrational periods of indium adatoms (66 kcalmol^?1, 6 × 10^?17 s for √31 phase and 63 kcalmol^?1, 3 × 10^?15 s for √3 phase). A pattern overlapping √31 + √31, observed in the desorption process, is interpreted as a fluctuation phenomenon caused by a finite interaction range of indium adatoms on silicon (111) surfaces. The range is determined to be ～24 Å.     

An interpretation of the energy-momentum tensor of the dirac field with anomalous magnetic moment

The ground state radiative widths of the 1.56 MeV (3/2⁺) and the 1.35 MeV (5/2^?) levels in¹⁹F were determined by inelastic electron scattering. The measured cross sections have been analysed using DWBA calculations. The resultsΓ _y ⁰ (5/2^?→1/2^?,E3)=(8.1±1.7)·10^?10eV andΓ _y ⁰ (3/2⁺→1/2⁺,E2=(1.76±0.15)·10^?4eV are in agreement with, but more accurate than, former measurements.     

On EAS spectrum with extremely low content of hadrons in the primary-energy range ∼10<Superscript>14</Superscript>−10<Superscript>15</Superscript> eV

The distribution of energy fluxes of the hadron component of extensive air showers through an ion-ization calorimeter in the primary-energy range ～3 × 10¹³?10¹⁶ eV is considered. Extensive air showers with zero and minimum energy fluxes of the hadron component are selected. It is concluded that the primary-energy range E ₀ ≈ 1 × 10¹⁴?2 × 10¹⁵ eV contains isotropic γ radiation with a spectrum close to bell-shaped, having a maximum near E ₀ ≈ 2.2 × 10¹⁴ eV and an additional peak near E ₀ ≈ 1.6 × 10¹⁵ eV.     

Chemisorption of H2 on W(100): Absolute sticking probability,coverage, and electron stimulated desorption

Measurements of both the absolute sticking probability near normal incidence and the coverage of H₂ adsorbed on W(100) at ~ 300K have been made using a precision gas dosing system; a known fraction of the molecules entering the vacuum chamber struck the sample crystal before reaching a mass spectrometer detector. The initial sticking probability S₀ for H₂/W(100) is 0.51 ± 0.03; the hydrogen coverage extrapolated to S = 0 is 2.0 × 10¹⁵ atoms cm^?2. The initial sticking probability S₀ for D₂/W(100) is 0.57 ± 0.03; the isotope effect for sticking probability is smaller than previously reported. Electron stimulated desorption (ESD) studies reveal that the low coverage β₂ hydrogen state on W(100) yields H⁺ ions upon bombardment by 100 eV electrons; the ion desorption cross section is ~ 1.8 × 10^?23 cm². The H⁺ ion cross section at saturation hydrogen coverage when the β₁ state is fully populated is ? 10^?25 cm². An isotope effect in electron stimulated desorption of H⁺ and D⁺ has been found. The H⁺ ion yield is ? 100 × greater than the D⁺ ion yield, in agreement with theory.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Multipole mixing ratios of γ-transltions in 182W

γ-γ directional correlation experiments were performed on 14 cascades in ¹⁸²W populated from the β^? decay of ¹⁸²Ta(115 d). Two Ge(Li) detectors were used in a coincidence arrangement, and the ¹⁸²Ta sources were dissolved in HF acid to minimize extranuclear perturbations. For the 1189keV, 2^? → 2⁺ transition, the measured directional correlation coefficients are consistent only with multipole mixing ratios $\text{δ}\text{(}\text{M}\text{2}\text{E}\text{1)}\text{= 0.45 ± 0.03}\text{and}\text{δ}\text{(E3}\text{E1)}\text{= ?0.67 ± 0.07}$. These mixing ratios are discussed and compared with the known conversion coefficients for the 1189keV transition. The E2/M1 multipole mixing ratios determined are (energy in keV): δ(66) = 0.15 ± 0.15, δ(85) = 0.31 ± 0.05, δ(114) = 0.31 ± 0.05, 0.56 ≦ δ(179) ≦ 1.36, δ(1121) = 12⁺²_?1, and δ(1231) = ?(32⁺¹⁴²_?15). The measured M2/E1 mixing ratios are: δ(68) = 0.03 ± 0.02, δ(152) = 0.014 ± 0.013 and δ(156) = ?0.13 ± 0.19.     

High spin states and neutron multiplicities after pion capture in181Ta and209Bi

The absorption of stoppedπ ^? in¹⁸¹Ta and²⁰⁹Bi has been investigated by studying prompt and delayedγ-ray spectra. Absolute cross-sections for the yield of isotopes per capturedπ ^? in (π ^?, xn) reactions, as well as the relative probability of populating nuclear states of different spins have been measured for the hafnium and lead isotopes, respectively. A spin as high as 20 has been observed in the production of²⁰⁴Pb. The ground-state rotational bands of the hafnium isotopes are excited to spin values up to 16. Neutron multiplicities as large as 15 have been observed for both targets. A neutron multiplicity of ?8 is most probable for both tantalum and bismuth targets. The strong interaction monopole energy shift? ₀ and widthΓ ⁰ for the 4f level are found to beε ₀(¹⁸¹Ta)=540±100eV; ?₀(²⁰⁹Bi)=1790±150 eV;Γ ₀(¹⁸¹Ta)=225±57 eV;Γ ₀(²⁰⁹Bi) =1166±70 eV. The quadrupole moments, determined from the hyperfine splitting of the 4f pionic atom level, areQ=3.30±0.06b andQ=}-0.50±0.08b for¹⁸¹Ta and²⁰⁹Bi, respectively.     

Estimate of the fraction of primary photons in the cosmic-ray flux at energies ∼1017 eV from the EAS-MSU experiment data

We reanalyze archival EAS-MSU data in order to search for events with an anomalously low content of muons with energies E _μ > 10 GeV in extensive air showers with the number of particles N _e ? 2 × 10⁷. We confirm the first evidence for a nonzero flux of primary cosmic gamma rays at energies E ～ 10¹⁷ eV. The estimated fraction of primary gamma rays in the flux of cosmic particles with energies E ? 5.4 × 10¹⁶ eV is ε_γ = (0.43 _?0.11 ^+0.12 )%, which corresponds to the intensity I _γ = (1.2 _?0.3 ^+0.4 ) × 10^?16 cm^?2 s^?1 sr^?1. The study of arrival directions does not favor any particular mechanism of the origin of the photon-like events.