Measurement of the barrier height of the reflective W {110} plane boundaries in surface diffusion of single atoms

Plane boundaries are in general reflective to diffusing atoms. From about 2000 heating periods of direct field ion microscope observations we have studied adatom plane edge interaction and determined the barrier heights of the W {110} plane boundaries in single atom diffusion of W, Re, and Ir. Using equations we have derived recently, the barrier heights ΔE_b are found to be about 200 meV for these adatoms.     

Diffusion of hydrogen and deuterium on the (111) plane of tungsten

The diffusion of ¹H and ²H on the (111) plane of a W field emitter has been studied by the fluctuation method at various coverages. Both activated and unactivated diffusion is observed; the latter shows very little isotope effect, suggesting that coupling to the substrate is so strong that mass renormalization makes the effective masses of ¹H and ²H nearly identical. Values of D in the tunneling, i.e. temperature independent, regime are 10^?13?5 × 10^?14 cm²/s depending on coverage. For activated diffusion at high coverages, corresponding to population of the β₁ state E = 2.4?3.2 kcal/mol and D₀ = 2 × 10^?8 ?5 × 10^?7 cm²/s, depending on coverage. For lower coverages, corresponding to β₂ population, E = 7–9 kcal/mol, D₀ = 9 × 10^?6 ?2 × 10^?3 cm²/s, again depending on coverage. Similar values are obtained for ²H, with E and D₀ values slightly reduced. An exponentially decaying correlation signal for clean W was also seen and interpreted in terms of flip-flop of W atoms.     

Mobility of CO on the (110) plane of Tungsten

The measurement of time autocorrelation functions of field emission current fluctuations has been applied to the adsorption of CO on the (110) plane of tungsten. For molecularly adsorbed virgin-CO, no evidence for diffusion was found at any coverage, although a weak, exponentially decaying correlation function, suggesting flip-flop between differing ad-sites, was seen. A hysteresis in the mean square fluctuation could be clearly identified with conversion to β-CO. For the latter state a flip-flop signal was seen for 280 ? T ? 650 K, and for T$\text{\$}\text{?}$650 K a correlation function corresponding to diffusion was found. The activation energy of diffusion was 23 kcal, independent of coverage. This value agrees closely with that found for oxygen diffusion at $\text{O}\text{W}$ = 0.5. For CO readsorbed on a β-layer (α-CO) neither diffusion nor flip-flop was seen.     

Adsorption of copper on single crystal planes of tungsten

Properties of copper condensed on selected areas of a thermally cleaned tungsten surface have been studied by probe hole field emission microscopy. Interpretation of the φ_hkl?$\text{}\text{?}$gq relationship observed on (211), (111) and (310) for adsorption at T > 300 K is based on hardsphere models of the plane surfaces upon which the first monolayer of copper raises φ_ithkl, the second reduces it to a minimum value, and the third achieves $\text{}\text{?}$gf_sat on each plane. At T > 300 K the relatively low binding energy of copper on (110) prevents is population below ～2$\text{}\text{?}$gq as previously observed for lead, and the plateaux in the φ₁₁₀?$\text{}\text{?}$gq curves are thought to result from the difficulty of nucleating the first and second monolayers of copper on (110). Comparison of our observations with those made by LEED/Auger techniques emphasise significant differences between the substrates used, in that, on field emitters (110) is step-free and surrounded by a sink/ source of adatoms, while the LEED specimen is stepped but has no comparable local sink/ source. The initial changes in φ are ascribed to formation of an adsorbate-substrate dipole whose sign and magnitude is controlled by electron equilibration between the substrate metal and a broadened and partly-filled resonance level lying approximately 5.2 eV below the vacuum level. Measurement of the total energy distribution of electrons field emitted from (110) and (132) supports this picture which contrasts with that of Polanski and Sidorski who consider the dipole sign and strength to be controlled principally by adsite geometry. Low activation energies characterise surface transport which is controlled by one-plane processes, and in some cases transport across the probed area is controlled by processes of relatively high activation energy which take place outside the examined plane.     

Magnetic anisotropy of strained epitaxial manganite films

The in-plane magnetic anisotropy of epitaxial La_0.7Sr_0.3MnO₃ (LSMO) films is studied at room temperature by the following three independent techniques: magnetooptical Kerr effect, ferromagnetic resonance at a frequency of 9.61 GHz, and recording of absorption spectra of electromagnetic radiation at a frequency of 290.6 MHz. The films are deposited onto NdGaO₃ (NGO) substrates in which the (110)NGO plane is tilted at an angle of 0–25.7° to the substrate plane. The uniaxial magnetic anisotropy induced by the strain of the film is found to increase with the tilt angle of the (110)NGO plane. A model is proposed to describe the change in the magnetic anisotropy energy with the tilt angle. A sharp increase in the radio-frequency absorption in a narrow angular range of a dc magnetic field near a hard magnetization axis is detected The anisotropy parameters of the LSMO films grown on (110)NGO, (001)SrTiO₃, and (001)[(LaAlO₃)_0.3 + (Sr₂AlTaO₆)_0.7] substrates are compared.     

Diffusion of hydrogen on metal surfaces: strong coupling limit

Recently DiFoggio and Gomer measured diffusion coefficients for ¹ H/W(110) and ² H/W(110) using the field emission fluctuation method. Qualitatively, they found two temperature regimes: high temperature thermally activated behavior and a low temperature regime of temperature independent diffusivity. We examine in detail the possibility that the thermal regime is due to phonon assisted tunneling (small polarons). By means of a Kubo formulation, we calculate the high temperature real part of the frequency dependent diffusivity. We conclude that for H/W (110) a polaronic mechanism would require an implausibly large adatom-phonon coupling. We also comment on the low temperature results.     

Diffusion and compressibility of sodium on the (110) plane of tungsten

The surface diffusion parameters and the compressibility of sodium on the (110) plane of tungsten have been measured using the field emission fluctuation method for sodium coverages from 0.2 to 3 × 10¹⁴ atoms cm^?2 and for temperatures from 170 to 500 K. Two temperature regimes can be defined. In the high temperature regime (? 300 K) the diffusion is essentially normal with an activation energy ranging from 0.28 to 0.58 eV and a preexponential coefficient D₀ from 10^?8.1 to 10^?2.7 cm² s^?1. In this regime the compressibility increases with temperature indicating an effective repulsive adatoms interaction. In the low temperature regime (? 300 K) the diffusion coefficient decreases with temperature at high coverage and slowly increases with temperature at lower coverage. The transition between both regimes appears on the compressibility versus temperature curve as an inflection point. The comparison of the present results with slow electron diffraction results furnishes strong evidence that the observed transition corresponds to a continuous short-range order-disorder transition.     

高JcBi-2223银包套带材的电阻转变展宽与磁通钉扎

系统地研究了高J_cBi-2223相银包套带材在0—1T磁场下的电阻转变展宽.实验结果表明,Bi-2223带材的电阻转变具有热激活的性质.研究了磁通钉扎势与温度的关系,得到电阻转变曲线的温度关系为R(T)=R₀exp{-u₀(1-T/T_c)ⁿ/kT},其中磁场平行于ab面时,n=4.5;磁场垂直于ab面时,n=3.在磁场平行于ab面时,耗散与Lorentz力无关,只与平行于ab面的磁场大小有关,这可 关键词：     

Electrical spin transport in a GaAs (110) channel

A homoepitaxial GaAs (110) channel gives a great interest in the field of semiconductor spintronics due to the longer spin diffusion. By utilizing optimal temperature process and V/III flux ratio control, the GaAs layer is grown without a serious defect. In a ferromagnet/semiconductor hybrid device, Tb₂₀Fe₆₂Co₁₈/Ru/Co₄₀Fe₄₀B₂₀ films are deposited on the GaAs (110) channel as a spin source to investigate the spin transport in (110)-oriented channel. To measure the Hanle signal, an in-plane magnetic field is applied to the perpendicularly polarized spins which are injected from the Tb₂₀Fe₆₂Co₁₈ layer. From the experimental results, the spin diffusion length in a GaAs (110) is longer than that in a GaAs (100) by up to 25%. The proper selection of crystalline growth direction for the spin transport channel is a viable solution for an efficient spin transport.     

Mössbauer effect study of SrEu2Fe2O7

The antiferromagnetic ferrite SrEu₂Fe₂O₇ was studied by Mössbauer effect of⁵⁷Fe in the range 77–650 K. Analysis of the data gives a Neel temperature of 544 K±2 K and an extrapolated effective magnetic fieldH(OK) of 545 kG. Good fit to the spectrum at 290 K is obtained withH _eff=475 kG, δ=0.37 mm/s, 1/2e ² qQ(1+η ²/3)=0.70mm/s, θ and ?=90°. The Brillouin function forS=5/2 poorly fits the experimental data of hyperfine magnetic fields. In the critical rangeH _eff can be described byH(T)=H(0)D(1?T/T _N )^β, where β nearly 0.29. The quadrupole interaction parameter is quite temperature independent, of the order of 0.69 mm/s in the paramagnetic state. Agreement with the value obtained by a point charge calculation is good. The largest axis of the EFG tensor,V _zz , lies in the plane (110), making an angle of 22.6° with thec axis. The direction of magnetization is nearly perpendicular toV _zz in [110] direction.     

Comment on the “cross-channel diffusion mechanism on the Pt(110) surface” BY S.H. Garofalini and T. Halicioglu

It is known that the Pt(110) surface exhibits in its stable state a 1 × 2 reconstruction. It seems therefore not appropriate to compare theoretical surface diffusion coefficients calculated for the regular, non-reconstructed Pt(110) surface with the experimental data obtained by field ion microscopy. In particular, the process of cross-channel diffusion by atom exchange which is observed on the regular (110) surface by molecular dynamics simulations may have no relationship to the experimental findings of cross-channel adatom diffusion on reconstructed Pt(110) and Ir(110) surfaces. An alternate mechanism for easy cross-channel adatom diffusion on reconstructed (110)?1 × 2 surfaces of Pt and Ir is proposed.     

Magnetization anisotropy in the AFM and SDW phases of CeB6

The angular dependences of the magnetization and Hall resistance have been investigated by the method of the sample rotation in the magnetic field in the high-quality single-crystal samples in the paramagnetic and magnetically ordered phases of CeB₆ in the magnetic field up to 60 kOe. It has been shown that, as CeB₆ undergoes the transition from the antiferromagnetic modulated phase to the so-called antiferroquadrupolar phase, the easy-magnetization axis in the [110] plane changes from 〈100〉 to 〈110〉. The magnetic field dependences of the anisotropic component of the magnetization differ radically in these magnetically ordered phases. The analysis provides evidence in favor of the formation of a state with the spin density wave (SDW phase) in the temperature range T _N ≈ 2.3 K < T < T _Q ≈ 3.3 K in CeB₆.     

Thermal stability of adsorbed CH3NCO on Cu{110} AND Pt{110} from vibrational and photoelectron spectroscopies

The thermal stability of CH₃NCO adsorbed on Cu{110} and Pt{110} is investigated using HREELS, TPD, and ARUPS. CH₃NCO desorbs largely without fragmentation from Cu{110}, but on Pt{110} only about 20% of the adsorbed CH₃NCO desorbs intact, with 80% decomposing on the surface at T > 200 K into CO(a), H(a), CH_x(a), N(a) and NH_y(a) fragments. The kinetics of the surface decomposition were characterised for 220 < T < 300 K by HREELS and the activation energy for CH₃NCO decomposition was found to vary strongly as a function of coverage.     

Field and temperature dependences of the specific heat of the La1.85Sr0.15CuO4 superconductor

This paper reports on the temperature and field dependences of the specific heat of high-quality La_1.85Sr_0.15CuO₄ single crystals carried out at low temperatures in magnetic fields of up to 8 T for two magnetic field orientations, namely, along the [100] and [110] crystallographic axes. The field dependence of the electronic density of states (DOS) was found to be anisotropic for different magnetic field orientations in the a–b plane, with the electronic density being the lowest along the a axis (for H ∥ [100]) and maximum for the field inclined at 45° to the a axis (for H ∥ [110]). Electronic specific heat in a magnetic field was observed to depend linearly on temperature T and nonlinearly on the magnetic field H: C _DOS=bTH ^1/2. In a zero field, the electronic specific heat grows quadratically with temperature as C _DOS=αT ². Estimation of the maximum superconducting gap width from the experimentally determined values of the α coefficient of T ² and of the electronic DOS in the normal state yields Δ ₀=300 K. The observed features indicate that La_1.85Sr_0.15CuO₄ is a superconductor with d symmetry of the order parameter.     

Nature of the N b absorption band in LiF crystals

It was found by the methods of optical spectroscopy and X-ray diffraction analysis that the N _b absorption band in LiF crystals is related to the reoriented F ₄ center when all the F centers lie in the (110) plane. These defects are decomposed into F ₂ centers at annealing.     

高Jc Tl系2223相银包套带材的磁通钉扎和耗散

测量了Ｔｌ系２２２３相银包套超导带（Ｊ_c＝１．５×１０^４Ａ·ｃｍ^-2，７７Ｋ，０Ｔ）在０－０．８Ｔ磁场下电阻转变展宽，实验结果引用热激活磁通蠕动模型加以解释。磁场平行于带面（Ｈ∥ａｂ面）和磁场垂直于带面（Ｈ⊥ａｂ面）两种情况下，激活能与磁场之间满足幂指数关系：Ｕ_0∥＝０．２１ H^-0.3(eV),Ｕ_0⊥＝０．１5 H^-0.4(eV)，其中Ｈ的单位为ｋＧ。 关键词：     

Defect-induced nonpolar-to-polar transition at the surface of CuInSe2

In contrast to zinc-blende semiconductors, where the nonpolar (110) surface has the lowest energy, our first-principles calculations on the chalcopyrite semiconductor CuInSe₂ reveal that facets terminated by the (112)-cation and (1̄1̄2̄)-Se polar surfaces are lower in energy than the unfaceted (110) plane, despite the resulting increased surface area. This explains the hitherto puzzling existence of polar microfacets on nominally nonpolar (110) chalcopyrite surfaces. The extraordinary stability of these polar facets originates from the effective neutralization of surface charge by low-energy ordered Cu_In antisite or Cu vacancy surface defects, while the relaxed but defect-free (112) surface is metallic and much higher in energy. We explain the low carrier density of the observed faceted surface in terms of autocompensation between opposite-polarity facets.     

Anisotropic longitudinal electron diffusion coefficient in wurtzite gallium nitride

The longitudinal electron diffusion coefficient (D _l ) of wurtzite (WZ) gallium nitride (GaN) is calculated by an ensemble Monte Carlo (EMC) method. By using the power spectral density associated with velocity fluctuation, the relationship between D _l and electric field strength, frequency, doping concentration and temperature is presented. The anisotropic D _l of GaN impacted by anisotropy of the electronic dispersion is also investigated. It has been found that the D _l in Γ–A direction (c-direction) is larger than that in Γ–M direction (basal plane) in most cases. For lower electric field, the D _l keeps constant at first, then decreases with increasing frequency. However, for higher electric field, the D _l firstly approaches a peak value, then decreases with increasing frequency. When the frequency is zero, the D _l decreases with the increasing electric field, and then increases until a peak value. Finally, it decreases with increasing electric field again. When the temperature increases, the D _l decreases in both directions for increasing scattering rate. A comparison between our calculated diffusion coefficient and the mobility under low electric field by Einstein equation is presented.     

Proton diffusion in the room-temperature phase of [(NH4)1−xRbx]3H(SO4)2 as studied by 1H spin-lattice relaxation in the rotating frame

Proton diffusion in the room-temperature phase (phase II) of [(NH₄)_1?xRb_x]₃H(SO₄)₂ (0≤x≤1) has been studied by means of ¹H spin-lattice relaxation times in the rotating frame, T_1ρ. The ¹H T_1ρ values were measured at 200.13 MHz in the range of 380–490 K. The ammonium protons and the acidic protons have independent T_1ρ values in the higher temperature range of phase II, suggesting that the spin diffusion between the two species is ineffective. The translational diffusion of the acidic protons is the most dominant mechanism to relax both the ammonium protons and the acidic protons in phase II. The ¹H T_1ρ values in phase II are analyzed theoretically and the motional parameters are obtained. The results of NMR well explain the macroscopic proton conductivity.     

Desorption kinetics and directional dependence of the surface diffusion of potassium on stepped W(100) surfaces

Using a surface ionisation ion microscope the desorption parameters and the diffusion constant of potassium were measured on stepped W(100) surfaces. The activation energy of ionic desorption as well as the corresponding prefactor do not depend on the step density; the mean adsorption lifetime τ can be expressed as τ=1.6×10^?14s exp(2.44 eV/kT).Whereas the surface diffusion of potassium on “flat” W(100) and on W(S)-[9(100)×(110)] was found to be isotropic, on W(S)- [5(100)×(110)] and W(S)-[3(100)×(110)] it occurs preferentially parallel to the step direction. The diffusion constant D_∥ for this direction has roughly the same value for all investigated surfaces: D_∥=7.8×10^?2 cm²s^?1 exp(?0.42 eV/kT). For the direction perpendicular to the steps D⊥ depends on the step density, whereby the activation energy as well as the prefactor increase with increasing step density.