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1.
本文研究了Pd2Si的生成对周期性Pd/Si多层膜X射线衍射性能的影响。X射线衍射强度的测量数据表明Pd2Si的生成对长周期多层膜的衍射强度影响不大,但对短周期多层膜衍射强度的影响较大。在引入折射率修正后,我们不仅用单个峰的位置计算了多层膜的周期,而且还用了以两个峰的位置联立消去折射率修正的方法计算了多层膜的周期,前者的误差大于后者。模拟计算的结果说明:均匀Pd2Si层的生成不足以解释Pd/Si多层膜衍射强度随退火温度的变化,界面的平整化或粗糙化是影响衍射强度的另一个要素。
关键词: 相似文献
2.
利用X射线衍射(XRD),X射线光电子能谱(XPS)和俄歇电子能谱(AES)对Pd/W/Si(111)界面进行了研究。实验结果表明,当系统作低温退火时,受W膜的阻挡,未生成硅化物,但Pd/W界面和W/Si(111)界面均有互扩散。升高退火温度,Pd-W原子在Si衬底上形成互溶体,Pd原子已穿过W阻挡层而到达W/Si(111)界面处,随着退火温度的继续升高,首先在W/Si(111)界面处生成PdSix,WSix也随之生成,这样就形成Pd-W原子分布的“反转”,在薄 相似文献
3.
利用改进的solgel法,在Pt/Ti/SiO2/Si衬底上制备了PbZr0.5Ti0.5O3(PZT50/50)薄膜.采用了一种新的方式,从同一前驱体溶液得到了厚度各异的单一退火层.研究了薄膜的结构和性质随单层退火厚度的改变而发生的变化,发现随着单一退火层厚度的降低,薄膜(111)取向的程度增大,同时薄膜的剩余极化和介电常量也逐渐增高.当单一退火层厚度降低到约为40nm时,可得到高度(111)择优取向的PZT薄膜.从薄膜成核机理的基础上讨论了薄膜结构变化的内在因素,认为随单一退火层厚度的增加薄膜由单一的
关键词: 相似文献
4.
Si衬底上ZnSe外延膜的低压MOCVD生长 总被引:2,自引:2,他引:0
以硒化氢(H2Se)和二甲基锌为源材料,生长温度是300℃时,用低压金属有机化学气相沉积(LP-MOCVD)系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射(XRD)、扫描电子显微镜的能量色散(EDS)以及光致发光(PL)实验验证ZnSe外延膜的质量,在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰,这说明外延膜是(111)取向的单晶薄膜,在能量色散谱中除了Si,Zn和Se原子外,没有观测到其他原子,说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1,有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰,表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。 相似文献
5.
通过高温退火注入了铝的Si(100)样品,探讨偏析出来的铝在硅表面的热力学行为.由900℃的退火实验发现,偏析出来的铝原子一方面形成Si(100)基底的外延铝膜和铝岛,另一方面与硅原子结合形成尺度约为2—3nm的铝硅团簇.而1200℃的退火实验显示,铝和硅的快速冷凝形成了立方晶系的Al4Si合金晶粒、尺度约为20—30nm.细小的铝硅团簇在结构上独立于样品基底并且趋于聚集成团,很可能是在高温退火和快速降温过程中形成铝硅合金晶粒的前驱.
关键词:
硅表面
铝掺杂
团簇
4Si')" href="#">Al4Si 相似文献
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研究了铸态Mg-Sn-Si合金中Mg2(Si,Sn)复合相的结构、 特性以及该相对Mg-Sn-Si合金变质作用的影响. 结果表明: Sn原子能取代Mg2Si中的部分Si生成Mg2(Si,Sn)复合相, 该三元相与Mg2Si, Mg2Sn相的结构相同, 属于面心立方结构, Mg2(Si,Sn)相的元素含量并不固定, 在Si富集区形成的Mg2(Si,Sn)相中, Si元素含量高, 在Si贫乏区形成的Mg2(Si,Sn)相中, Si元素含量低. Si含量较多的Mg2(Si,Sn)相性能与Mg2Si相接近, Sn含量较多的Mg2(Si,Sn)相性能与Mg2Sn相接近, 实验中发现Mg2(Si,Sn)复合相的纳米硬度、 弹性模量与维氏硬度等物理性能介于Mg2Si与Mg2Sn之间, Mg2(Si,Sn)相对汉字状Mg2Si相的变质处理起到桥梁作用.
关键词:
Mg-Sn-Si合金
2Si')" href="#">Mg2Si
2Sn')" href="#">Mg2Sn
2(Si,Sn)复合相')" href="#">Mg2(Si,Sn)复合相 相似文献
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用直流磁控溅射法在Si(001)衬底上制备了以Ta为缓冲层、含有15周期的Ni80Fe20(4nm)/Cu(6nm)多层膜.样品分别在150,250,350℃进行了真空退火处理.用低角和高角X射线衍射法研究了多层膜的微结构.结果表明,所有样品均有较好的[111] 取向,而且随退火温度或时间的增加,[111]取向程度变得更高.超晶格周期、平均面间距在退火后略有减小,表明多层膜结构在退火后变得更为致密.多层膜界面粗糙度随退火温度或时间的增加而增大,平均相关长度随退火温度或时间的增加而减小,分析认为这是由于Ni80Fe20/Cu界面存在严重的互扩散所导致的.模拟Ni80Fe20/Cu多层膜高角X射线衍射谱,发现在Ni80Fe20/Cu蜀面有非常厚的混合层存在,而且混合层厚度随退火温度或时间的增加而增大.模拟结果还表明,随退火温度或时间的增加,Ni80Fe20层面间距几乎保持不变,Cu层面间距则随退火温度的增加而略有减小.
关键词: 相似文献
11.
A system Pd (deposit)-Si (substrate) has been studied by LEED and AES. Pd2Si formed on Si(111) became epitaxial after a short time of annealing at a temperature between 300 and 700°C, while the Pd2Si formed on Si(100) did not, in both cases the surfaces of the Pd2Si being covered with a very thin Si layer. A sequence of superstructures (3√3 × 3√3), (1 × 1), and (2√3 × 2√3) was observed successively in Pd/Si(111) as the annealing temperature was increased. A (√3 × √3) structure was obtained by sputtering the 3√3 surface slightly. It was found that the √3 structure corresponds to Pd2Si(0001)-(1 × 1) grown epitaxially on Si(111), and that the 3√3 structure comes from the thin Si layer accumulated over the silicide surface, while the 2√3 and 1 structures arise from a submonolayer of Pd adsorbed on Si(111). Superstructures observed on a Pd/Si(100) system are also studied. 相似文献
12.
《Applied Surface Science》1987,29(3):287-299
The formation and epitaxial orientation of Pd silicide on clean and native oxide covered Si(100) and (111) surfaces was studied by Auger electron spectroscopy (AES) and reflection high energy electron diffraction (RHEED). Pd was vapor deposited in UHV on to the substrates up to thicknesses of about 6 nm. On clean Si substrates, ultra-thin Pd deposits reacted to form Pd2Si already at room temperature, as detected by a characteristic splitting of the Si LVV Auger peak. However, a polycrystalline structure with very small crystallite sizes was indicated by diffuse ring patterns in RHEED. When the initial thickness of the Pd deposit exceeded about 3 nm, the diffraction ring pattern of unreacted metal developed. During annealing of room temperature deposits of Pd, the (100) and (111) substrates behaved differently. Larger crystallites formed on Si(100), but the films remained polycrystalline, though textured. On Si(111), virtually perfect epitaxial re-orientation of the silicide was found. When the substrates were initially covered with native oxide of about 2 nm thickness, silicide formation started at about 200°C, resulting in polycrystalline, but strongly textured Pd2Si. Upon further annealing at temperatures up to 600°C, an additional phase of epitaxially oriented Pd2Si developed on Si(111), similar to that on clean Si(100). In all experiments, extended annealing at temperatures above 250°C caused segregation of Si to the surface. This was accompanied by the development of an additional peak in the Auger electron spectra at about 313 eV, which we assign to a plasmon loss of δE = 17 eV in the Si overlayer, being excited by Pd Auger electrons of energy 330 eV. 相似文献
13.
《Applied Surface Science》1987,29(4):418-426
We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200°C in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as PdxSi with x<2 is found at the interface Pd/Si and Pd2Si/Si, before and after annealing respectively. 相似文献
14.
Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd2Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 °C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd2Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed. 相似文献
15.
D. Levy A. Grob J. J. Grob J. P. Ponpon 《Applied Physics A: Materials Science & Processing》1984,35(3):141-144
The formation of palladium silicide Pd2Si by rapid thermal annealing of Pd layers on silicon has been studied as a function of annealing time (1–60s) in the temperature range 350–500 °C. It is shown that the results found for conventional furnace annealing (long duration, low temperature) can be extrapolated for rapid thermal annealing (shorter time, higher temperature) when taking into account the exact time dependence of the short temperature cycle. The growth rate is essentially diffusion limited and the activation energy is close to 1.1±0.1 eV. Silicide resistivity of about 30–40 cm was obtained for 200–400 nm thick Pd2Si layers formed at 400 °C for a few seconds. 相似文献
16.
In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon (100) substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon (100) substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon (100) substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer. 相似文献
17.
本文通过在硅衬底发光二极管(LED)薄膜p-GaN表面蒸发不同厚度的Ni覆盖层,将其在N2 ∶O2=4 ∶1的气氛中、400℃—750℃的温度范围内进行退火,在去掉薄膜表面Ni覆盖层之后制备Pt/p-GaN欧姆接触层.实验结果表明:退火温度和Ni覆盖层厚度均对硅衬底GaN基LED薄膜p型欧姆接触有重要影响,Ni覆盖退火能够显著降低p型层中Mg受主的激活温度.经牺牲Ni退火后,p型比接触电阻率随退火温度的升高呈先变小后变大的规律,随Ni覆盖层厚度的增加呈先变小后变
关键词:
氮化镓
发光二极管
牺牲Ni退火
p型接触 相似文献
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19.
Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate 总被引:1,自引:0,他引:1
D.K. Sarkar M. Falke H. Giesler S. Teichert G. Beddies H.-J. Hinneberg 《Applied Physics A: Materials Science & Processing》2000,70(6):681-684
The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline
Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of
the interlayer silicide is found to be 2.02 e/?3 by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited
Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy
of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide
on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation
and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni3Si and the local temperature is 1389 K if the interlayer compound is Ni2Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous
interlayer and produced highly textured Ni film.
Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000 相似文献
20.
Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate 下载免费PDF全文
Ultrathin InSb thin films on SiO2/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500℃, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500℃, which is higher than its melting temperature (about 485℃), shows a monocrystalline-like feature. High-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO2/Si(111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RAT is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500℃. 相似文献