Effects of photon field on heat transport through a quantum wire attached to leads

We theoretically investigate photo-thermoelectric transport through a quantum wire in a photon cavity coupled to electron reservoirs with different temperatures. Our approach, based on a quantum master equation, allows us to investigate the influence of a quantized photon field on the heat current and thermoelectric transport in the system. We find that the heat current through the quantum wire is influenced by the photon field resulting in a negative heat current in certain cases. The characteristics of the transport are studied by tuning the ratio, $?{\omega }_{\gamma }/k_{\mathrm{B}}\mathrm{\Delta }T$, between the photon energy, $?{\omega }_{\gamma }$, and the thermal energy, $k_{\mathrm{B}}\mathrm{\Delta }T$. The thermoelectric transport is enhanced by the cavity photons when $k_{\mathrm{B}}\mathrm{\Delta }T>?{\omega }_{\gamma }$. By contrast, if $k_{\mathrm{B}}\mathrm{\Delta }T<?{\omega }_{\gamma }$, the photon field is dominant and a suppression in the thermoelectric transport can be found in the case when the cavity-photon field is close to a resonance with the two lowest one-electron states in the system. Our approach points to a new technique to amplify thermoelectric current in nano-devices.     

Electronic structure and optical properties of ABP2O7 double phosphates

Luminescence and luminescence excitation under VUV radiation of ${\mathrm{ABP}}_2{\mathrm{O}}_7$ ($\mathrm{A}=\mathrm{Na}$, K, Cs; $\mathrm{B}=\mathrm{Al}$, In) double phosphates are studied. Two emission bands peaking near 330 and 420 nm are common for investigated ${\mathrm{ABP}}_2{\mathrm{O}}_7$ crystals. The band structure and partial densities of electronic states of perfect ${\mathrm{KAlP}}_2{\mathrm{O}}_7$, ${\mathrm{LiInP}}_2{\mathrm{O}}_7$ and ${\mathrm{NaTiP}}_2{\mathrm{O}}_7$ crystals are calculated by the full-potential linear-augmented-plane-wave (FLAPW) method. It is found that the structures of the conduction bands of ${\mathrm{ABP}}_2{\mathrm{O}}_7$ crystals, which have different B cations, are appreciably different. Experimental results are compared with results of calculations of the electronic structure. Assumptions concerning the origin of luminescence in double phosphates are made.     

Spin-glass behavior in the antiperovskite manganese nitride Mn3CuN codoped with Ge and Si

Antiperovskite manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_x{\mathrm{Ge}}_{0.4?x}\right)N$ ($x=0.05$, 0.1, 0.15) were prepared and their negative thermal expansion, magnetic and specific heat properties were investigated. A frozen state with a freezing temperature was found at ～207 K in ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$. This indicates that ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$ exhibits a spin glass state at low temperatures. We discussed the cause of spin glass behavior and correlated this spin glass behavior with broadening of the negative thermal expansion operation-temperature window of the manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$.     

Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin SiOx matrix

Metal/${\mathrm{SiO}}_2$/a-Si-${\mathrm{SiO}}_x$/c-Si structures containing amorphous silicon nanoparticles (a-Si NPs) embedded in ultra thin ${\mathrm{SiO}}_x$ matrix are fabricated by thermal evaporation of ${\mathrm{SiO}}_x$ and sputtering of ${\mathrm{SiO}}_2$ layers followed by thermal annealing at $700{}^{\circ }\mathrm{C}$. A memory effect, due to charging of a-Si NPs in ${\mathrm{SiO}}_x$, is observed. The processes of NP charging and discharging are accomplished by applying pulses with alternative polarities. The observed shift of the flat band voltage of the high-frequency C–V curve caused by a voltage pulse of $-15\mathrm{V}$ having duration of 1 s is more than 3 V. In addition, the structures show good retention characteristics which make them promising for application in non-volatile memory devices.     

Traffic flow behavior at un-signalized intersection with crossings pedestrians

Mixed traffic flux composed of crossing pedestrians and vehicles extensively exists in cities. To study the characteristics of the interference traffic flux, we develop a pedestrian-vehicle cellular automata model to present the interaction behaviors on a simple cross road. By realizing the fundamental parameters (i.e. injecting rates ${\alpha }_1$, ${\alpha }_2$, the extracting rate β and the pedestrian arrival rate ${\alpha }_P$), simulations are carried out. The vehicular traffic flux is calculated in terms of rates. The effect of the crosswalk can be regarded as a dynamic impurity. The system phase diagrams in the $({\alpha }_1,{\alpha }_P)$ plane are built. It is found that the phase diagrams consist essentially of four phases namely Free Flow, Congested, Maximal Current and Gridlock. The value of the Maximal current phase depends on the extracting rate β, while the Gridlock phase is achieved only when the pedestrians generating rate is higher than a critical value. Furthermore, the effect of vehicles changing lane ($P_{\mathrm{ch}1},P_{\mathrm{ch}2}$) and the location of the crosswalk $X_P$ on the dynamic characteristics of vehicles flow are investigated. It is found that traffic situation in the system is slightly enhanced if the location of the crosswalks $X_P$ is far from the intersection. However, when $P_{\mathrm{ch}1}$, $P_{\mathrm{ch}2}$ increase, the traffic becomes congested and the Gridlock phase enlarges.