Transport properties of MoS<Subscript>2</Subscript> nanoribbons: edge priority

We report about results from density functional based calculations on structural, electronic and transport properties of one-dimensional MoS₂ nanoribbons with different widths and passivation of their edges. The edge passivation influences the electronic and transport properties of the nanoribbons. This holds especially for nanoribbons with zigzag edges. Nearly independent from the passivation the armchair MoS₂ nanoribbons are semiconductors and their band gaps exhibit an almost constant value of 0.42 eV. Our results illustrate clearly the edge priority on the electronic properties of MoS₂ nanoribbons and indicate problems for doping of MoS₂ nanoribbons.     

The electronic properties tuned by the phase transition between the semiconducting and metallic phase of monolayer MoS2/WS2

Using first-principles methods, we systematically investigate the electronic properties and atomic mechanism of the monolayer MoS₂/WS₂ homo-junction structure, which contains different phase structures, either the semiconducting hexagonal (H) structure or metallic trigonal (T) structure. Through tuning the size of the lateral homo-junction structure of either MoS₂ or WS₂, it can produce different boundaries which induce different phase transferred styles. More interestingly, the electronic structures of homo-junction structures can also be tuned by changing the size of the armchair and zigzag shapes of nanoribbons. The homo-junction structure of either MoS₂ or WS₂ exhibits alterable band structure and band edge position with the changing of the size. The strong dependence of the band offset on the sizes of the homo-junction monolayer also implicates a possible way of patterning quantum structures with size engineering.     

A metal-semiconductor transition triggered by atomically flat zigzag edge in monolayer transition-metal dichalcogenides

Due to the structure of three stacked layers, monolayer transition-metal dichalcogenides (TMDs) is different from graphene. Creating atomically flat graphene-like edges in them has long been expected, which is crucial to the modulation of electronic structures in two-dimensional systems. Recently, by thermal annealing, Chen et al. [21] successfully synthesized atomically flat Mo-terminated edge in monolayer MoS₂. Inspired by this, through first-principles calculations, we studied the electronic and transport properties of typical TMD monolayers with transition atom-terminated flat zigzag edges, i.e., ScS₂, VS₂, CrS₂, FeS₂, NiS₂, MoS₂ and WS₂. It is found that the nanoribbons with and without flat edges are both metallic. Interestingly, the vacancy in the flat edge could open a transmission gap at the Fermi level in the ScS₂ ribbon, and trigger a metal-semiconductor transition. Further analysis shows that, the opening of bandgap around the Fermi level induced by the specific pattern of vacancies is the mechanism behind, which could be used as an modulating method for electronic structures. We believe our results are quite beneficial for the development of many other monolayer transition-metal dichalcogenides configurations, showing great application potential.     

Manipulating edge current spin polarization in zigzag MoS2 nanoribbons

The electronic structure and quantum transport of a zigzag monolayer molybdenum disulfide (MoS₂) nanoribbon are investigated using a six-band tight-binding model. For metallic edge modes, considering both an intrinsic spin–orbit coupling and local exchange field effects, spin degeneracy and spin inversion symmetry are broken and spin selective transport is possible. Our model is a three-terminal field effect transistor with a circular-shaped gate voltage in the middle of scattering region. One terminal measures the top edge current and the other measures the bottom edge current separately. By controlling the circular gate voltage, each terminal can detect a totally spin-polarized edge current. The radius of the circular gate and the strength of the exchange field are important, because the former determines the size of the channel in both S-terminated (top) and Mo-terminated (bottom) edges and the latter is strongly related to unbalancing of the density of spin states. The results presented here suggest that it should be possible to construct spin filters using implanted MoS₂ nanoribbons.     

Electronic and transport properties of V-shaped defect zigzag MoS_2 nanoribbons

Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.     

Hydrogen passivation tunes edge magnetism in the ZMoS2NR with a sulfur vacancy

We performed density functional theory study on electronic structure, magnetic properties and stability of zigzag MoS₂ nanoribbons with a S vacancy (ZMoS₂NRs-V_S) and considered their different edge passivation. The ZMoS₂NR-V_S systems are magnetic metals with ferromagnetic (FM) edge states. The magnetic moments are greatly influenced by the site of S vacancy and edge passivation because the vacancy and edge states significantly change the structure of the systems. Importantly, we can achieve distinct FM states such as both edge FM and single edge FM states in the ZMoS₂NRs-V_S by tuning edge passivated pattern. Additionally, edge passivation can not only tune the magnetism of the ZMoS₂NRs-V_S but also enhance their stability by eliminating dangling bonds. These interesting findings on the ZMoS₂NRs may open the possibility of their application in nanodevices and spintronics.     

Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects

We have studied the electronic structures of arsenene nanoribbons with different edge passivations by employing first-principle calculations. Furthermore, the effects of the defect in different positions on the transport properties of arsenene nanoribbons are also investigated. We find that the band structures of arsenene nanoribbons are sensitive to the edge passivation. The current-voltage characteristics of unpassivated and O-passivated zigzag arsenene nanoribbons exhibit a negative differential resistance behavior, while such a peculiar phenomenon has not emerged in the unpassivated and O-passivated armchair arsenene nanoribbons. The vacant defects on both top and bottom edges in unpassivated armchair arsenene nanoribbon can make its current-voltage characteristic also present a negative differential resistance behavior. After expanding the areas of the top and bottom defects in unpassivated armchair arsenene nanoribbon, the peak-to-valley ratio of the negative differential resistance behavior can be enlarged obviously, which opens another way for the application of arsenene-based devices with a high switching ratio.     

Symmetrical metallic and magnetic edge states of nanoribbon from semiconductive monolayer PtS2

Transition metal dichalcogenides (TMD) MoS₂ or graphene could be designed to metallic nanoribbons, which always have only one edge show metallic properties due to symmetric protection. In present work, a nanoribbon with two parallel metallic and magnetic edges was designed from a noble TMD PtS₂ by employing first-principles calculations based on density functional theory (DFT). Edge energy, bonding charge density, band structure, density of states (DOS) and simulated scanning tunneling microscopy (STM) of four possible edge states of monolayer semiconductive PtS₂ were systematically studied. Detailed calculations show that only Pt-terminated edge state among four edge states was relatively stable, metallic and magnetic. Those metallic and magnetic properties mainly contributed from 5d orbits of Pt atoms located at edges. What's more, two of those central symmetric edges coexist in one zigzag nanoribbon, which providing two atomic metallic wires thus may have promising application for the realization of quantum effects, such as Aharanov–Bohm effect and atomic power transmission lines in single nanoribbon.     

Influence of edge passivation on the transport properties of the zigzag phosphorene nanoribbons

By using first-principles calculation based on density functional theory and non-equilibrium Green's function method, we investigate the transport properties of zigzag phosphorene nanoribbons (ZPNRs). The edges of the ZPNRs can be passivated in three ways named W1, W2, W3. These calculated results show that the electronic transport properties of the ZPNRs can be seriously influenced by the edge passivation ways, and the transport is determined by both the two edges and the interaction between them. Moreover, we find the width of the ZPNR can switch on or switch off the transport channel of the W3-type ZPNR. Furthermore, we present the transmission spectra, the band structures of both left and right electrodes, the molecular energy levels, and transmission eigenstates of the H-S-passivated W3-type ZPNRs to uncover the transport mechanism. This study provides a theoretical support for designing the related nanodevices by changing the passivation ways, which is an effective route for tuning the electronic structures and the transport properties of the phosphorene nanoribbons.     

First-principles calculations of magnetic edge states in zigzag CrI3 nanoribbons

CrI₃ monolayer has recently drawn much attention due to its two-dimensional long range ferromagnetic order. We find that CrI₃ nanoribbons, which are strips of CrI₃ monolayer, can be used as building blocks of nanodevices. In this paper, we studied the atomic and electronic structures of CrI₃ zigzag nanoribbons by using first-principles calculations. CrI₃ zigzag nanoribbons are also ferromagnet. Interestingly, edge states exist in the system and play an important role in their electronic structures. They dominate the band structures around Fermi level and can be tuned by edge atomic structures. The intrinsic ferromagnetism and rich electronic structures enable CrI₃ zigzag nanoribbons a group of promising candidate materials for spintronics.     

Carbon nanoribbons and nanotubes based on δ-graphyne: A first-principles study

As a stable allotropy of two-dimensional (2D) carbon materials, δ-graphyne has been predicted to be superior to graphene in many aspects. Using first-principles calculations, we investigated the electronic properties of carbon nanoribbons (CNRs) and nanotubes (CNTs) formed by δ-graphyne. It is found that the electronic band structures of CNRs depend on the edge structure and the ribbon width. The CNRs with zigzag edges (Z-CNRs) have spin-polarized edge states with ferromagnetic (FM) ordering along each edge and anti-ferromagnetic (AFM) ordering between two edges. The CNRs with armchair edges (A-CNRs), however, are semiconductors with the band gap oscillating with the ribbon width. For the CNTs built by rolling up δ-graphyne with different chirality, the electronic properties are closely related to the chirality of the CNTs. Armchair (n, n) CNTs are metallic while zigzag (n, 0) CNTs are semiconducting or metallic. These interesting properties are quite crucial for applications in δ-graphyne-based nanoscale devices.     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现，完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带，边缘空位缺陷的存在使得纳米带能隙变小，且缺陷浓度越大，能隙越小，并发生了半导体-金属转变. 利用这些研究结果，将有助于在能带工程中实现其电子结构裁剪.     

Zigzag型石墨纳米带电子结构和输运性质的第一性原理研究

采用第一性原理电子结构和输运性质计算研究了zigzag型单层石墨纳米带(具有armchair 边缘)的电子结构和输运性质及其边缘空位缺陷效应. 研究发现,完整边缘的zigzag型石墨纳米带是具有一定能隙的半导体带,边缘空位缺陷的存在使得纳米带能隙变小,且缺陷浓度越大,能隙越小,并发生了半导体-金属转变. 利用这些研究结果,将有助于在能带工程中实现其电子结构裁剪. 关键词： 石墨纳米带 空位缺陷 电子结构 输运性质     

Electronic and magnetic properties of copper-family-element atom adsorbed graphene nanoribbons with zigzag edges

We have investigated the electronic and magnetic properties of copper-family-element (CFE) atom adsorbed graphene nanoribbons (GNRs) with zigzag edges using first-principles calculations based on density functional theory. We found that CFE atoms energetically prefer to be adsorbed at the edges of nanoribbons. Charges are transferred between the CFE atom and carbon atoms at the edge, which reduce the local magnetic moment of carbon atoms in the vicinity of adsorption site and change the electronic structure of GNRs. As a result, Cu adsorbed zigzag GNR is a semiconductor with energy band gap of 0.88 eV in beta-spin and energy gap of 0.22 eV in alpha-spin, while Ag adsorbed zigzag GNR and Au adsorbed zigzag GNR are both half-metallic with the energy gaps of 0.68 eV and 0.63 eV in beta-spin, respectively. These results show that CFE atom adsorbed zigzag GNRs can be applied in nanoelectronics and spintronics.     

The influence of random edge defects on the electric and optical properties of phosphorene nanoribbons along zigzag direction

Phosphorene nanoribbons are one-dimensional semiconductors with possible edge states falling within its energy bandgap. We build the connection between the possible configurations of edge defects and the corresponding electric and optical properties in practice systems. The influence of the random defects or roughness at the edges of phosphorene nanoribbons cutting along zigzag direction is investigated quantitatively. Theoretical calculations show that the absorption peak due to the transitions involving edge states has an obvious blue shift with the zigzag-type positions at the edges increasing. The absorption thus can be used to estimate the random defects or roughness of the edges of phosphorene nanoribbons.     

Vanadium sulfide nanoribbons: Electronic and magnetic properties

We report the structural, electronic and magnetic properties of zigzag-type 2H-VS₂ nanoribbons based on the first-principles calculations. Our results suggest that the zigzag-type 2H-VS₂ nanoribbons are intrinsic ferromagnetic or ferrimagnetic materials dependent on their edge structures. The S-terminated VS₂ nanoribbons with or without hydrogen saturation at the edges are ferromagnetic, whereas V-terminated VS₂ nanoribbons are ferrimagnetic at their ground states. The average magnetic moment per V atom of VS₂ nanoribbons increases monotonously with their width, but still smaller than that of perfect VS₂ monolayer. These results imply the great potential of VS₂ nanoribbons in spintronics application.     

Electronic and magnetic properties of zigzag edge graphene nanoribbons with Stone-Wales defects

The electronic and magnetic properties of zigzag graphene nanoribbons (ZGNRs) with Stone-Wales defects are studied by extensive first-principles calculations. It is shown that the asymmetry distribution of the Stone-Wales defects can induce finite magnetic moment in the defective ZGNRs. As the defect near one of the ribbon edges moving to the centre region, the magnetic moment of the defective ZGNRs gradually decreases to zero, following a transition from metal to semi-half-metal and eventually to semiconductor. In addition, by symmetrically placing an additional defect at the opposite side of the defective ZGNRs, the finite magnetic moment vanishes, and the electronic properties depend on the distance between the defect and the closer ribbon edge. These findings are robust within a wide range of defect concentration.     

Structural, electronic, and magnetic properties of pristine and oxygen-adsorbed graphene nanoribbons

The structural, electronic and magnetic properties of pristine and oxygen-adsorbed (3,0) zigzag and (6,1) armchair graphene nanoribbons have been investigated theoretically, by employing the ab initio pseudopotential method within the density functional scheme. The zigzag nanoribbon is more stable with antiferromagnetically coupled edges, and is semiconducting. The armchair nanoribbon does not show any preference for magnetic ordering and is semiconducting. The oxygen molecule in its triplet state is adsorbed most stably at the edge of the zigzag nanoribbon. The Stoner metallic behaviour of the ferromagnetic nanoribbons and the Slater insulating (ground state) behaviour of the antiferromagnetic nanoribbons remain intact upon oxygen adsorption. However, the local magnetic moment of the edge carbon atom of the ferromagnetic zigzag ribbon is drastically reduced, due to the formation of a spin-paired C-O bond.     

Chemically decorated boron-nitride nanoribbons

Motivated by recent studies of graphenen nanoribbons (GNRs), we explored electronic properties of pure and chemically modified boron nitride nanoribbons (BNNRs) using the density functional theory method. Pure BNNRs with both edges fully saturated by hydrogen are semiconducting with wide band gaps. Values of the band gap depend on the width and the type of edge. The chemical decoration of BNNRs’ edges with four different functional groups, including -F, -Cl, -OH, and -NO₂, was investigated. The band-gap modulation by chemical decoration may be exploited for nanoelectronic applications.      

Transport properties and device-design of Z-shaped MoS2 nanoribbon planar junctions

Based on MoS₂ nanoribbons, metal-semiconductor-metal planar junction devices were constructed. The electronic and transport properties of the devices were studied by using density function theory (DFT) and nonequilibrium Green's functions (NEGF). It is found that a band gap about 0.4 eV occurs in the planar junction. The electron and hole transmissions of the devices are mainly contributed by the Mo atomic orbitals. The electron transport channel is located at the edge of armchair MoS₂ nanoribbon, while the hole transport channel is delocalized in the channel region. The I-V curve of the two-probe device shows typical transport behavior of Schottky barrier, and the threshold voltage is of about 0.2 V. The field effect transistors (FET) based on the planar junction turn out to be good bipolar transistors, the maximum current on/off ratio can reach up to 1 × 10⁴, and the subthreshold swing is 243 mV/dec. It is found that the off-state current is dependent on the length and width of the channel, while the on-state current is almost unaffected. The switching performance of the FET is improved with increasing the length of the channel, and shows oscillation behavior with the change of the channel width.