Relativistic theory of atom-laser interactions at very high laser intensities

The high-frequency approximation of Kristi? and Mittleman is considered in detail as a basis for the relativistic theory of atom-laser interactions. The properties of the 3D potentials are discussed. Within a one-dimensional model similar to that employed by Kylstra, Ermolaev, and Joachain in ab initio calculations on the time-dependent Dirac equation, the electron mass-shift due to dressing by a superstrong laser field is investigated. In the full domain of the laser parameters, the frequency ω and the peak field strength ?₀, the 1D bound states exhibit remarkable features. The numerical calculations show the existence of a very wide intermediate range of the field strengths where, in the zeroth order of the high-frequency approximation, the binding is stabilized by the field.     

Polaronic effects on laser dressed donor impurities in a quantum well

The effect of laser field on the binding energy in a GaAs/Ga1_1−xAl_xAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree–Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor–metal transition.     

Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric field

Using the effective mass and parabolic band approximations and a variational procedure we have calculated the combined effects of intense laser radiation, hydrostatic pressure, and applied electric field on shallow-donor impurity confined in cylindrical-shaped single and double GaAs-Ga_1−xAl_xAs QD. Several impurity positions and inputs of the heterostructure dimensions, hydrostatic pressure, and applied electric field have been considered. The laser effects have been introduced by a perturbative scheme in which the Coulomb and the barrier potentials are modified to obtain dressed potentials. Our findings suggest that (1) for on-center impurities in single QD the binding energy is a decreasing function of the dressing parameter and for small dot dimensions of the structures (lengths and radius) the binding energy is more sensitive to the dressing parameter, (2) the binding energy is an increasing/decreasing function of the hydrostatic pressure/applied electric field, (3) the effects of the intense laser field and applied electric field on the binding energy are dominant over the hydrostatic pressure effects, (4) in vertically coupled QD the binding energy for donor impurity located in the barrier region is smaller than for impurities in the well regions and can be strongly modified by the laser radiation, and finally (5) in asymmetrical double QD heterostructures the binding energy as a function of the impurity positions follows a similar behavior to the observed for the amplitude of probability of the noncorrelated electron wave function.     

Dependence of impurity binding energy on nitrogen and indium concentrations for shallow donors in a GaInNAs/GaAs quantum well under intense laser field

Within the framework of the effective-mass approximation, using a variational method, we have calculated the effect of intense laser radiation on the binding energy of the shallow-donor impurities in a Ga_{1- x} In _x N _y As_{1- y} /GaAs single quantum well for different nitrogen and indium mole concentrations. Our numerical results show that the binding energy strongly depends on the laser intensity and frequency (via the laser dressing parameter) and it also depends on the nitrogen and indium concentrations. Impurity binding energy under intense laser fields can be tuned by changing the nitrogen and indium mole fraction.     

Design of a nanoscale silicon laser

The recent observation of optical gain from silicon nanocrystals embedded in SiO₂ opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO₂ are used as the optical gain media. One design employs a SiO₂ membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO₂ membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO₂ membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO₂. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations. Received: 20 December 2002 / Accepted: 7 January 2003 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +1-434/982-2037, E-mail: supriya@virginia.edu     

Elongation rate measurements of nanofilms by microbump method induced by laser pulse

A laser pulse-induced microbump method that aims to measure the elongation rate of nanofilms is proposed. The sample structure is designed as “substrate/active layer/nanofilm” and the laser pulse is used as energy source to heat the active layer and to create microbump. These cause the nanofilm to expand and elongate. The surface area and length change of nanofilm is calculated by measuring the deflections and diameters of the microbumps, as well as to obtain the elongation rate of the nanofilms. A series of microbumps with different deflections are obtained. The deflections are measured precisely by atomic force microscopy (AFM) by taking AgO_x and ZnS-SiO₂ as the active layer and nanofilm, respectively, and by controlling pulse laser parameters. The line elongation rate and plane elongation rate of ZnS-SiO₂ nanofilm are measured at thickness of only 10 nm. Results show that both the two elongation rates linearly increases with laser power from 3.2 to 5.2 mW. Plane elongation rate is a little higher than the line elongation rate at the same laser power. The rupture at 5.4 mW laser power corresponds to fracture strength of the film. The maximum line elongation rate and plane elongation rate are 13.241% and 19.766%, respectively. This method applies a reproducible and efficient method for its applications in the near future.     

Manufacturing of Nd:Gd3Ga5O12 ridge waveguide lasers by pulsed laser deposition and ultrafast laser micromachining

Laser radiation is used both for the deposition of the laser active thin films and for the micro structuring to define wave guiding structures for the fabrication of waveguide lasers. Thin films of crystalline and amorphous neodymium doped Gd₃Ga₅O₁₂ are grown on single crystal yttrium aluminium garnet by pulsed laser deposition using excimer laser radiation.Manufacturing of the laser active waveguides by micro structuring is done using femtosecond laser ablation of the deposited films. The structural and optical properties of the films and the morphology of the structured waveguides are determined in view of the design and the fabrication of compact and efficient diode pumped waveguide lasers. The resulting waveguides are polished, provided with resonator mirrors, pumped using diode lasers and the waveguide lasers are characterized. The spectroscopic properties of the amorphous waveguide are investigated and an infrared waveguide laser is demonstrated. To our knowledge, there have been no reports by other groups of the successful operation of a structured waveguide laser fabricated by this technique or of a waveguide laser made from amorphous neodymium doped Gd₃Ga₅O₁₂.     

Importance of pre-ionisation for the non-chain discharge-pumped HF laser

The importance of pre-ionisation for the non-chain discharge-pumped HF laser is studied through experiments on an X-ray photo-triggered laser using mixtures of Ne, SF₆, and ethane. The discharge dynamic in Ne/SF₆ mixtures or pure SF₆, as well as the stabilisation effect induced by C₂H₆ and consequences for the laser performance, are investigated for pre-ionisation electron density values, n_eo, ranging from 10⁶ cm^-3 up to 10⁹ cm^-3, as well as for the so-called discharge self-breakdown mode. Without ethane, the minimum n_eo value which is needed to complete 100% homogeneous charge deposition in the plasma is a very sharply increasing function of the SF₆ pressure. This hinders performance optimisation when the molecule used to react with F-atoms, for instance H₂, has no effect on the discharge dynamic. The minimum ethane partial pressure that is needed to stabilise the discharge depends on n_eo, the pumping pulse duration, the deposited electric charge, and the SF₆ pressure. Discharges in Ne/SF₆ can be much more efficiently stabilised by addition of a small amount of ethane than by an increase of n_eo. A pre-ionisation density as low as 10⁶ cm^-3 is sufficient to achieve the maximum laser energy value, but total suppression of the pre-ionisation has a detrimental effect on the active medium homogeneity. Received: 30 May 2000 / Revised version: 9 October 2000 / Published online: 9 February 2001     

Infrared multi-line NH3 laser and its application for pumping an InSb laser

In this paper, infrared (IR) emissions from a TE CO₂ laser pumped NH₃ laser are reported. 38 IR laser lines were obtained from a CO₂ 9R(30) line pumped NH₃ : N₂ mixture by cooling a NH₃ laser tube, and 13 lines of them were new emission lines as far as we known. Four Q-branch lines were included and the others belonged to P-branch transitions. The 12.078 μm line, which was the strongest line in this experiment, was used to pump an InSb spin-fip Raman (SFR) laser which could be tuned from 13.35 to 13.55 μm.     

Design and performance of a transverse discharge, UV-preionized mercury-bromide laser

The design, construction, and operating characteristics of a pulsed, transverse discharge-pumped HgBr laser, capable of operation at pulse repetition frequencies as high as 100 Hz, are presented. Having an active length of 53 cm, this laser system is preionized by two sets of spark arrays and average single pulse energies of 55 mJ are produced from Ne/N₂/HgBr₂ (natural abundance) vapor mixtures, with an output coupling of 50% and 17 J of energy stored in the pulse forming network. Based on measurements of the laser pulse energy for several values of cavity output coupling, the small signal gain coefficient and saturation intensity for the laser were determined to be 4.7% cm^–1 and 260 kW cm^–2, respectively. The single pass gain-to-loss ratio is 12.4.     

High-efficiency,high-energy performance of a pulsed HF laser pumped by phototriggered discharge

A comparison of the performance of pulsed infrared HF lasers pumped by phototriggered discharges using either Ne/SF₆/H₂ or Ne/SF₆/C₂H₆ mixtures are presented. For an active volume of 50 cm³, a specific output energy as high as 11 J/ has been achieved with an efficiency higher than 3% when C₂H₆ is used as H atom fuel. The replacement of ethane by molecular hydrogen reduces the laser performance by 40%. The investigation of the temporal evolution of the laser intensity shows that this dramatic decrease results from a shortening of the laser pulse duration rather than from a decrease of the peak power. Indications are given that this behavior is correlated to a very different temporal evolution of the discharge parameters, especially at low reduced electric field E/N.     

New FIR laser lines from CHD2OH optically pumped by a cw CO2 laser

This work reports 83 new optically pumped far infrared laser lines, using deuterated methyl alcohol, CHD₂OH, as active medium. For each line we list the measured wavelength, its polarization relative to the pump line, the optimum gas pressure and the CO₂ laser pump power at the maximum absorption.     

F2 laser induced oxidation of inorganic material

Transparent SiO₂ thin films were selectively fabricated on Si wafer by 157 nm F₂ laser in N₂/O₂ gas atmosphere. The F₂ laser photochemically produced active O(¹D) atoms from O₂ molecules in the gas atmosphere; strong oxidation reaction could be induced to fabricate SiO₂ thin films only on the irradiated areas of Si wafer. The oxidation reaction was sensitive to the single pulse fluence of F₂ laser. The irradiated areas were swelled and the height was approximately 500-1000 nm at the 205-mJ/cm² single pulse fluence for 60 min laser irradiation. The fabricated thin films were analytically identified to be SiO₂ by the Fourier-transform IR spectroscopy. The SiO₂ thin films could be also removed by subsequent chemical etching to fabricate micro-holes 50 nm in depth on Si wafer for microfabrication.     

A CW DCN waveguide laser of high volumetric efficiency

This paper describes a CW submillimeter waveguide laser operating on 190 and 195 μm DCN lines with high volumetric efficiency. The laser cavity is a 3.2 cm inner diameter, 70 cm long, Pyrex tube with plane reflectors (one of them is a copper mesh) against its ends. After optimization of various parameters (such as the N₂:CD₄:He gas mixture, the pressure and the discharge current, the wall temperature and the output coupling), this laser, with only 57 cm long active discharge, delivers 8.4 and 7.6 mW on the 190 and 195 μm lines, respectively, for the EH₁₁ mode. This represents volumetric powers of 75 and 65 μW cm^-3. The free space propagation of the EH₁₁ fundamental mode was found to be as for a gaussian beam, and the absorption of the laser beam in the atmosphere was also measured.     

Characterizing laser dye performance

Several measures of laser performance are investigated for a generic dye laser operating under conditions where the input energy is limited by a maximum value and the output is required to be above some minimum value. Dimensionless expressions are developed that show the interrelationships between the efficiency, the number of laser pulses for a unit volume of dye solution, and the total laser output per volume of dye solution. For one of the performance measures, the total laser output per unit volume of dye solution, the initial slope efficiency divided by a parameter characteristic of the degradation process,k ₀/c, is identified as a reasonable figure of merit. It is readily evaluated from experimental degradation data and has reasonably simple properties relative to transfer between laser systems.     

Infrared and far-infrared laser emissions from a TE CO2 laser pumped NH3 gas

In this paper, infrared (IR) and far-infrared (FIR) laser emissions from a TE CO₂ laser pumped NH₃ gas are reported. 8 IR laser emissions near the wavelength of 12 μm were observed by using 4 different CO₂ laser lines for the pumping. 3 IR laser emissions in P-branch of vibrational-rotational band (ν₂ → G) oscillated simultaneously in two pumping cases, i.e. pumping with the R(30) or R(16) line of 9.4 μm band from the CO₂ laser. 26 FIR laser emissions (26.45 μm ～ 281.0 μm) were observed by using 12 different CO₂ laser lines, and the 10 FIR emissions of them may be new laser emissions as far as we know.     

Multiwavelength Q-switched CO2 laser with continuous discharge

A low-pressure (20 mbar) CO₂ laser allows to extract pulses at several selected wavelengths simultaneously from the same active medium. We demonstrated this, using an industrial laser modified by a Q-switch and a resonator with two branches. In one branch the wavelengths are spatially separated, whereas in the other they oscillate in one common transverse mode. We designed a multi-wavelength resonator which requires a single additional reflector compared to usual laser cavities. It provided tunable oscillation at six wavelength simultaneously.     

Pulsed-periodic laser on RM helium and strontium transitions

Conditions of generation of a running excitation wave in the active medium of gas lasers and efficiency of the running wave application for pumping of the active medium are considered by the example of a strontium vapor laser. It is demonstrated that the running excitation wave is generated directly in the active laser medium and is supported by the energy stored in the capacitive component of the impedance of a gas-discharge tube. Generation on the self-limited (2¹P₁-2¹S₀) transition of the helium atom at λ = 2058 nm and simultaneous generation on RM transitions of the strontium ion and strontium and helium atoms and on a number of neon atom transitions is first excited. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 6–9, January, 2008.     

Frequency-stabilized Nd:YVO4 thin-disk laser

We have developed a Nd:YVO₄ thin-disk laser at 914 nm with single-frequency operation and active frequency stabilization to a low-finesse reference cavity. The spectral density of laser frequency noise is analysed by means of noise measurements at the error point of the frequency control loop. To address the 3¹S₀→3³P₁ magnesium intercombination line at 457 nm, we use an external frequency doubling stage based on periodically poled KTiOPO₄ for the generation of more than 150-mW output power at 457 nm. Optical beat signal measurements at 457 nm with a frequency-stable dye laser show a short-time line width of the thin-disk laser of less than 100 kHz. PACS 42.55.Xi; 42.60.Lh; 42.62.Fi; 42.65.Ky     

A visible helium plasma recombination laser

A small (active volume ≈ 6 cm³), fast Blümlein type, pulsed, transverse-discharge driven laser device exhibited afterglow lasing on the 3s³S-2p³P He transition at 706.5 nm in mixtures of helium and hydrogen or deuterium over a pressure range of 200 mbar. The main features of the laser pulses and relevant time-resolved fluorescence investigations are presented. Population inversion is attributed to the enhanced recombination pumping of upper level population and to hampered lower level population in the presence of H₂ (D₂).