The effect of laser field intensity on polarizability in a quantum well

A systematic study of binding energy of the ground state of a hydrogenic donor in a quantum well is calculated in the presence of a uniform electric field for different measure of laser intensities. Binding energy of the ground state of a donor is calculated, within the effective mass approximation, with the Bessel and Airy functions. Polarizability of a laser dressed donor impurity in the presence of electric field is reported. It is observed that the polarizability (i) increases as intensity of the laser field increases (ii) increases with the electric field strength and (iii) increases drastically when both the fields are applied. The dependence of the donor binding energy on the well width, the laser field intensity and the electric field is discussed. Our results are in good agreement with the previous investigations for other heterostructures in the presence of laser intensity.     

Magnetic field effects on THz quantum cascade laser: A comparative analysis of three and four quantum well based active region design

We consider the influence of additional carrier confinement, achieved by application of strong perpendicular magnetic field, on inter Landau levels electron relaxation rates and the optical gain, of two different GaAs quantum cascade laser structures operating in the terahertz spectral range. Breaking of the in-plane energy dispersion and the formation of discrete energy levels is an efficient mechanism for eventual quenching of optical phonon emission and obtaining very long electronic lifetime in the relevant laser state. We employ our detailed model for calculating the electron relaxation rates (due to interface roughness and electron–longitudinal optical phonon scattering), and solve a full set of rate equations to evaluate the carrier distribution over Landau levels. The numerical simulations are performed for three- and four-well (per period) based structures that operate at 3.9 THz and 1.9 THz, respectively, both implemented in GaAs/Al_0.15Ga_0.85As. Numerical results are presented for magnetic field values from 1.5 T up to 20 T, while the band nonparabolicity is accounted for.     

Diamagnetic susceptibility of a laser dressed donor in a quantum well

The binding energy of laser dressed donor impurity is calculated under the influence of a magnetic field in a quantum well. The binding energy of the ground state of a donor is investigated, within the single band effective mass approximation, variationally for different concentrations at the well centre. The effect of laser and magnetic fields on diamagnetic susceptibility of the hydrogenic donor is reported. The Landau energy levels of electrons in the quantum well as a function of magnetic field are reported. The results show that the diamagnetic susceptibility (i) decreases drastically as intensity of the laser field increases (ii) increases with the magnetic field strength (iii) decreases as the Al-concentration decreases and (iv) a variation of increase in binding energy is observed when non-parabolicity is included and this effect is predominant for narrow wells. Our results are in good agreement with previous investigations for other heterostructures in the presence of laser intensity.     

THz laser field effect on the optical properties of cylindrical quantum well wires

The oscillator strength and the linear and third order nonlinear refractive index changes of a cylindrical quantum well wire under intense non-resonant laser field have been investigated within the effective mass-approximation by using a finite element method. We found that the laser amplitude, the incident light and the intersubband relaxation time have an important influence on the refractive index changes.     

Anisotropic optical absorption in quantum well wires induced by high-frequency laser fields

The subband structure and optical properties of a cylindrical quantum well wire under intense non-resonant laser field are investigated by taking into account the correct dressing effect for the confinement potential. The energy levels and wave functions are calculated within the effective mass- approximation using a finite element method. It is found that the absorption coefficient and the saturation intensity are strongly affected by the laser amplitude and frequency as well as by the incident light polarization. As a key result, a large anisotropy in the linear and nonlinear optical absorptions for very intense laser field is predicted. These effects can be useful for the design of polarization sensitive devices.     

Polaronic effects on laser dressed donor impurities in a quantum well

The effect of laser field on the binding energy in a GaAs/Ga1_1−xAl_xAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree–Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor–metal transition.     

外电场对直接带隙Ge量子阱中的光学性质的影响

在有效质量近似下,考虑到外电场的影响,详细研究了直接带隙Ge/GeSi量子阱中带间光跃迁吸收系数和阈值能量随量子阱阱宽,外电场强度的变化情况。结果表明：随着外电场的增强,带间光跃迁吸收强度会逐渐减弱,阈值能量减小,吸收曲线向低能方向移动,出现了红移现象。此外,当量子阱比较大时,外电场对量子阱中带间光跃迁阈值能量的影响更加明显。     

On the simulation by a magnetic field of the quantized states in a quantum-well laser diode

The quantized states in a quantum-well semiconductor laser are simulated analytically by a magnetic field perpendicular to the well (infinite quasi-one-dimensional potential well) by deriving a close relationship for the magnetic-field strength which becomes a discrete quantity.     

Density of impurity states of shallow donors in a quantum well under intense laser field

The density of donor impurity states in a square GaAs–AlGaAs quantum well under an intense laser field is calculated taking into account the laser dressing effects on both the Coulomb potential and the confining potential. Using the effective-mass approximation within a variational scheme, the donor binding energy is obtained as a function of the laser dressing parameter, and the impurity position. Our results point out that a proper consideration of the density of impurity states may be of relevance in the interpretation of the optical phenomena related to shallow impurities in quantum wells, where the effects of an intense laser field compete with the quantum confinement.     

The quantum acoustomagnetoelectric field in a quantum well with a parabolic potential

The acoustomagnetoelectric (AME) field in a quantum well with a parabolic potential (QWPP) has been studied in the presence of an external magnetic field. The analytic expression for the AME field in the QWPP is obtained by using the quantum kinetic equation for the distribution function of electrons interacting with external phonons. The dependence of the AME field on the temperature T of the system, the wavenumber q of the acoustic wave and external magnetic field B for the specific AlAs/GaAs/AlAs is achieved by using a numerical method. The problem is considered for both cases: The weak magnetic field region and the quantized magnetic field region. The results are compared with those for normal bulk semiconductor and superlattices to show the differences, and we use the quantum theory to calculate the AME field in the QWPP.     

Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Donor impurity states in coupled quantum well wires under hydrostatic pressure and applied electric field

In this work we study the binding energy of the ground state for a hydrogenic donor impurity in laterally coupled GaAs/Ga_1−xAl_xAs quantum well wires, considering the simultaneous effects of hydrostatic pressure and applied electric field. We have used a variational method and the effective mass and parabolic band approximations. The low dimensional structure consists of two quantum well wires with rectangular transverse section coupled by a central Ga_1−xAl_xAs barrier. Our results are reported for several sizes of the structure and we have taken into account variations of the impurity position along the growth direction of the heterostructure.     

Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well

Based on the effective-mass approximation, the competition effects between the laser field and applied electric field on impurity states have been investigated variationally in the ZB GaN/AlGaN quantum well (QW). Numerical results show that for any laser field, the electric field makes the donor binding energy present asymmetric distribution with respect to the center of the QW. Moreover, when the laser field is weak, the electric field effects are obvious on the donor binding energy; however, the electric field effects are insensitive to the variation of donor binding energy in the ZB GaN/AlGaN QW with strong laser field.     

Spectroscopic ellipsometry of layer by layer deposited colloidal HgTe nanocrystals exhibiting quantum confinement

We have explored the optical properties of bilayers of Mercury telluride (HgTe) nanocrystals (NCs) embedded in polymer which were prepared from a colloidal solution. These NCs show strong luminescence in the near infrared at room temperature, which makes them an interesting material for the telecommunication area. The emission wavelength can efficiently be tuned by controlling the size of the NCs. We report spectroscopic ellipsometry measurements, which clearly show an energy shift of the critical points (CPs) in the dielectric function to higher energies compared to the HgTe bulk properties. This is caused by quantum confinement in the crystals. The exact peak energies of the transitions are fitted with line-shape models for CPs. Surprisingly, concepts coming from semiconductor bulk optics, as CPs, can be applied to NCs with a diameter of less than 5 unit cells.     

Comparative study of (1 0 0) and (1 1 1)B InGaAs single quantum well laser diodes

In this work, a series of identical In_xGa_1−xAs/Al_yGa_1−yAs single quantum well laser diodes, grown on (1 0 0) and (1 1 1)B GaAs substrates, have been thoroughly studied. For all samples, clear evidence of reduced threshold current densities in the (1 1 1)B substrate has been observed in electroluminescence spectra at 17 and 300 K. Modelling of the devices, based on a self-consistent solution of Schrödinger–Poisson's equations, was utilised in order to reproduce the experimental results. The model incorporates strain and piezoelectric effects on the quantum well states, free carrier screening, overlap integral computation, and optical gain calculation. The underlying mechanism, that explains the threshold reduction observed in the (1 1 1)B laser diodes, is discussed based on the results of the modelling.     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.     

Linear and nonlinear optical absorption in different graded quantum wells modulated by intense laser field

The laser field dependence of the linear and nonlinear intersubband optical absorption in different graded quantum wells (GQWs) is investigated in the effective mass approximation. Results obtained show that the position and the magnitude of the linear and total absorption coefficients depend on the laser parameter and the shape of GQW. The resonant peak of total absorption coefficient can be bleached at sufficiently high incident optical intensities. Such a dependence of the exciting optical intensity on the external field strengths in different GQWs can be very useful for several potential device applications. It should point out that by applying the laser field we can obtain a blue shift or a red shift in the intersubband optical transitions.     

Donor electron in a quantum well under the influence of an electric field

The ionization energies and the polarizabilities of a donor in an isolated well of a quasi two dimensional (Q2D) GaAs/Ga_1−x Al _x As heterostructure have been obtained for different well widths including electron-lattice coupling. A wave function that properly reduces to the hydrogenic function in the limiting case has been used. For fields of the order of 10⁵ V/m, the ionization energies decrease slightly with electric fields for all well widths (10 nm to 50 nm) studied. Also for a given electric field, as the well width increases, the ionization energy decreases. For fields of the order of 10⁷ V/m and for smaller well widths (<10 nm), the ionization energy generally increases with electric field. The results also show that for electric fields of this order, no donor bound state associated with the lowest subband is possible for well widths greater than 20 nm. The polarizabilities estimated using the expression for the dipole operator show that as the well width increases, the polarizability values also increase and do not show any abnormal behaviour.