DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

Structural,elastic, electronic,optical and thermoelectric properties of the Zintl-phase Ae3AlAs3 (Ae = Sr,Ba)

First-principles calculations were performed to investigate the structural, elastic, electronic, optical and thermoelectric properties of the Zintl-phase Ae₃AlAs₃ (Ae = Sr, Ba) using two complementary approaches based on density functional theory. The pseudopotential plane-wave method was used to explore the structural and elastic properties whereas the full-potential linearised augmented plane wave approach was used to study the structural, electronic, optical and thermoelectric properties. The calculated structural parameters are in good consistency with the corresponding measured ones. The single-crystal and polycrystalline elastic constants and related properties were examined in details. The electronic properties, including energy band dispersions, density of states and charge-carrier effective masses, were computed using Tran-Blaha modified Becke-Johnson functional for the exchange-correlation potential. It is found that both studied compounds are direct band gap semiconductors. Frequency-dependence of the linear optical functions were predicted for a wide photon energy range up to 15 eV. Charge carrier concentration and temperature dependences of the basic parameters of the thermoelectric properties were explored using the semi-classical Boltzmann transport model. Our calculations unveil that the studied compounds are characterised by a high thermopower for both carriers, especially the p-type conduction is more favourable.     

Electronic structure calculations and optical properties of a new organic-inorganic luminescent perovskite: (C9H19NH3)2PbI2Br2

(C₉H₁₉NH₃)₂PbI₂Br₂ compound is a new crystal belonging to the large hybrid organic-inorganic perovskites compounds family. Optical properties are investigated by optical absorption UV-visible and photoluminescence (PL) techniques. Bands to band absorption peak at 2.44 eV as well as an extremely strong yellow-green photoluminescence emission at 2.17 eV is observed at room temperature. First principle calculations based on the DFT and FLAPW methods combined with LDA approximation are performed as well. Density of state close to the gap is presented and discussed in terms of optical absorption and photoluminescence experimental results. The perfect agreement between experimental data and electronic structure calculations is highlighted.     

Theoretical investigation of Cu-containing materials with different valence structure types: BaCu2S2, Li2CuSb,and LiCuS

Optoelectronics research requires cheap materials with a broad spectrum of optical, electronic, and structural properties. The class of Heusler compounds and ternary structures provide many possibilities for finding alternative group IV and III–V semiconductor compounds. This study introduces wider band gap materials for use in solar cells as an alternative to cadmium sulfide buffer layers. The buffer layer is inserted between the absorber layer (p-type) and the transparent window layer (n-type) to enhance the maximum amount of light transmission. Reasonable calculations are reported for the band gaps of copper-containing materials: LiCuS, BaCu₂S₂, and Li₂CuSb. Previous optical analysis measurements of these films determined that the band gaps were 1.8 and 1.9 eV for BaCu₂S₂ and LiCuS, respectively. In general, semiconductor compounds have been studied theoretically, but there are major differences between the experimental and theoretically calculated band gaps. A suitable calculation method for semiconductor compounds is described in this study. For the first time, calculations based on the Engel and Vosko method are introduced for these semiconductor compounds. This method yields band gaps that are comparable to the experimental values, which facilitate the development of microscopic analyses of these compounds. Direct band gaps of 1.15 and 1.7 eV were obtained for BaCu₂S₂ and LiCuS, respectively, whereas the indirect band gap was 0.7 eV for Li₂CuSb.     

Influence of valence electron concentration on elastic, electronic and optical properties of the alkaline-earth tin oxides A3SnO (A=Ca, Sr and Ba): A comparative study with ASnO3 compounds

By employing first principles method of the plane wave pseudo potential calculations (PP-PW), based on the density functional theory (DFT), within the local density approximation (LDA), the correlation between valence electron concentration and structural, elastic, electronic as well as optical properties of A₃SnO and ASnO₃ compounds where A=Ca, Sr and Ba are investigated. The elastic constants and their pressure dependence are calculated using the static finite strain technique. We derived the bulk, shear and Young's moduli for ideal monocrystalline and for polycrystalline A₃SnO and ASnO₃ aggregates. Band structures reveal that alkaline-earth tin oxides A₃SnO are direct energy band gap (G-G) materials.The hardness of these compounds was explained using chemical bonding properties and Milliken charges transfer. The optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss, are calculated for radiation up to 20 eV. We have found that the static dielectric constants of all these compounds are in good agreement with Penn model.     

The under-pressure behaviour of mechanical,electronic and optical properties of calcium titanate and its ground state thermoelectric response

Abstract

In this study, the elastic, electronic, optical and thermoelectric properties of CaTiO₃ perovskite oxide have been investigated using first-principles calculations. The generalised gradient approximation (GGA) has been employed for evaluating structural and elastic properties, while the modified Becke Johnson functional is used for studying the optical response of this compound. In addition to ground state physical properties, we also investigate the effects of pressure (0, 30, 60, 90 and 120 GPa) on the electronic structure of CaTiO₃. The application of pressure from 0 to 90 GPa shows that the indirect band gap (Γ-M) of CaTiO₃ increases with increasing pressure and at 120 GPa it spontaneously decreases transforming cubic CaTiO₃ to a direct (Γ-Γ) band gap material. The complex dielectric function and some optical parameters are also investigated under the application of pressures. All the calculated optical properties have been found to exhibit a shift to the higher energies with the increase of applied pressure suggesting potential optoelectronic device applications of CaTiO₃. The thermoelectric properties of CaTiO₃ have been computed at 0 GPa in terms of electrical conductivity, thermal conductivity and Seebeck coefficient.     

First-principles study on the electronic and optical properties of BiFeO3

The structural, electronic, and optical properties of multiferroic bismuth ferrite (BiFeO₃) are investigated using density functional theory within generalized gradient approximation (GGA). The calculated lattice parameters are in good agreement with the experimental data. The electronic structure shows that BiFeO₃ has an indirect (very close to direct) band gap of 1.06 eV. The complex dielectric function, absorption spectra, refractive index, extinction coefficient, energy-loss spectrum and reflectivity are calculated, and the results are compared with the available experimental data. Finally, the optical properties of BiFeO₃ are discussed based on the band structure calculations.     

Structural,electronic and optical properties of Ca3Bi2: First-principles investigation

In this work by applying first principles calculations structural, electronic and optical properties of Ca₃Bi₂ compound in hexagonal and cubic phases are studied within the framework of the density functional theory using the full potential linearized augmented plane wave (FP-LAPW) approach. According to our study band gap for Ca₃Bi₂ in hexagonal phase are 0.47, 0.96 and 1?eV within the PBE-GGA, EV-GGA and mBJ-GGA, respectively. The corresponding values for cubic phase are 1.24, 2.08 and 2.14?eV, respectively. The effects of hydrostatic pressure on the behavior of the electronic properties such as band gap, valence bandwidths and anti-symmetry gap are investigated. It is found that the hydrostatic pressure increases the band widths of all bands below the Fermi energy while it decreases the band gap and the anti-symmetry gap. In our calculations, the dielectric tensor is derived within the random phase approximation (RPA). The first absorption peak in imaginary part of dielectric function for both phases is located in the energy range 2.0–2.5?eV which are beneficial to practical applications in optoelectronic devices in the visible spectral range. For instance, hexagonal phase of Ca₃Bi₂ with a band gap around 1?eV can be applied for photovoltaic application and cubic phase with a band gap of 2?eV can be used for water splitting application. Moreover, we found the optical spectra of hexagonal phase are anisotropic along E||x and E||z.     

Structural,elastic, electronic and optical properties of the cubic perovskites CaXO3 (X=Hf and Sn)

The structural, elastic, electronic and optical properties of CaXO₃ compounds with the cubic perovskites structure have been investigated, by employing a first principles method, using the plane wave pseudo potential calculations (PP-PW), based on the density functional theory (DFT), within the local density approximation (LDA). The elastic constants and their pressure dependence are calculated using the static finite strain technique. We derived the bulk, shear and Young’s moduli for ideal monocrystalline and for polycrystalline CaXO₃ aggregates which we have classified as ductile in nature. Band structures reveal that these compounds are indirect energy band gap (R-G) semiconductors; the analysis of the site and momentum projected densities, valence charge density bond length, bond population and Milliken charges, shows that bonding is of covalent–ionic nature. We have found that the elastic constants C₁₁, C₁₂, C₄₄ are in good correlation with the bonding properties. The optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss, are calculated for radiation up to 20 eV.     

First principles prediction of the elastic,electronic and optical properties of Sn3X4 (X = P,As, Sb,Bi) compounds: Potential photovoltaic absorbers

We report a first-principles study of structural, mechanical and optoelectronic properties of the Sn₃X₄ (X = P, As, Sb, Bi) compounds. The calculations were performed using the full-potential linearized augmented plane wave approach (FP-LAPW). The structural and mechanical properties of Sn₃X₄ (X = P, As, Sb, Bi) compounds were obtained using GGA-PBE. In addition, The Tran-Blaha modified Becke-Johnson exchange potential (TB-mBJGGA) technique was used to calculated the optoelectronic properties. The calculated electronic band structures and density of states reveal a direct band gap at Γ points varied from 0.11 eV to 1.23 eV for X = P, As, Sb, Bi. The optical absorption calculations show that all compounds have high absorption coefficients about twenty times greater than that of CuInSe₂ and CdTe in the visible region. The high absorption of these materials could be attributed to the localized p-states of cation (X = P, As, Sb, Bi) in the lower region of the conduction band.     

Density functional calculations of Pb1−xCaxSySe1−y alloys lattice matched to different substrates

Density functional calculations are performed to study the structural and electronic properties of technologically important Pb_1?xCa_xS_ySe_1?y quaternary alloys. The calculations are based on the total-energy calculations within the full-potential augmented plane-wave (FP-LAPW) method. For exchange-correlation energy and corresponding potential, the generalized gradient approximation (GGA) by Perdew–Burke–Ernzerhof (PBE) and Engel–Vosko (EVGGA) have been used. We investigated the effect of composition on lattice constant, bulk modulus and band gap for pseudobinary as well as for quaternary alloys, which showed non-linear dependence on the composition x and y. The presented contour maps of energy band gap and lattice constants versus concentrations could be useful for designing new structures with the desired optical properties. In addition, the energy band gap and natural band offset of simple cubic Pb_1?xCa_xS_ySe_1?y quaternary alloys lattice matched to PbS and SrS substrates are investigated. The obtained results show that the quaternary alloys of interest could be appropriate materials for designing heterostructures with desired optical and interfacial properties.     

Structural,electronic, and optical properties of ZnO:ZnSnN2 compounds for optoelectronics and photocatalyst applications

Semiconductors with suitable band gap are highly desirable for the applications in optoelectronic and energy conversion devices. In this work, using the recently developed strongly constrained and appropriately normed (SCAN) density functional calculations in conjunction with hybrid functional, we investigate the structural, electronic, and optical properties of earth abundant element based ZnO:ZnSnN₂ compounds formed through alloying. The proposed ZnO:ZnSnN₂ compounds in the low energy configurations possess band gaps of 2.28 eV-2.52 eV. The decrease in band gap compared to ZnO is mainly attributed to the p-d repulsion between N 2p+O 2p and Zn 3d electrons that lifts the top of valence band. For the ZnO:ZnSnN₂ compounds studied the band edges straddle the water redox potentials and the absorption onsets lie in the visible light range. Our studies are helpful for ZnO:ZnSnN₂ compounds' experimental synthesis and future application in optoelectronics and photocatalyst.     

Electronic and optical properties under pressure effect of alkali metal oxides

We report results of first-principles calculations for the electronic and optical properties under pressure effect of Li₂O, Na₂O, Ki₂O and Rb₂O compounds in the cubic antifluorite structure, using a full relativistic version of the full-potential augmented plane-wave plus local orbitals (FP-APW+lo) method based on density functional theory, within the local density approximation (LDA) and the generalized gradient approximation (GGA). Moreover, the alternative form of GGA proposed by Engel and Vosko (GGA-EV) is also used for band structure calculations. The calculated equilibrium lattices and bulk moduli are in good agreement with the available data. Band structure, density of states, and pressure coefficients of the fundamental energy gap are given. The critical point structure of the frequency dependent complex dielectric function is also calculated and analyzed to identify the optical transitions. The pressure dependence of the static optical dielectric constant is also investigated.     

Electronic Structure,Optical Properties,and Pressure Behavior of the CdB<Subscript>4</Subscript>O<Subscript>7</Subscript> and HgB<Subscript>4</Subscript>O<Subscript>7</Subscript> Compounds

Ab initio calculations of the structural, electronic, and optical properties of the CdB₄O₇ and HgB₄O₇ tetraborate compounds in three structural modifications with the Pbca, Cmcm, and Pmn2₁ symmetry have been performed in the framework of the density functional theory using the VASP package. The calculations of the electronic band structure showed that these compounds in all the investigated modifications are dielectrics with a band gap of 2–4 eV. The calculation of the structural properties of the tetraborates under pressure showed that the phase transition between the Pbca and Pmn2₁ structures in cadmium and mercury tetraborates occurs under pressures of 4.8 and 4.7 GPa, respectively.     

Structural,optoelectronic and thermoelectric properties of antiperovskite compounds Ae3PbS (Ae = Ca,Sr and Ba): A first principles study

In the last years, alkaline-earth based antiperovskite compounds with small semiconductor band gap have been proven to be promising candidate for optoelectronic and thermoelectric applications. In this work, the structural, electronic, optical and thermoelectric properties of Ae₃PbS (Ae = Ca, Sr and Ba) compounds have been predicted using first principles calculations based on the full-potential linearized augmented plane-wave (FP-LAPW) method and semiclassical Boltzmann transport theory. Exchange-correlation effect is treated with the generalized gradient approximation with Perdew–Burke–Ernzerhof scheme (GGA-PBE) and Tran–Blaha modified Becke–Johnson exchange potential. The lattice constant of considered materials increases as Ae goes in order from Ca to Ba and the hardness slightly decreases in this order. Ca₃PbS and Sr₃PbS are semiconductor with direct band gap of 0.199 eV and 0.116 eV, respectively, while Ba₃PbS is nearly metallic. Important optical responses of studied antiperovskites are found in the visible and ultraviolet energy range. Finally, the thermoelectric properties including Seebeck coefficient, electrical conductivity, thermal conductivity, power factor and figure of merit are calculated. Obtained results show that Ca₃PbS and Sr₃PbS could be candidate for applications in thermoelectric generators at low and moderate temperatures due to their high figure of merit values.     

Electronic and optical properties of Sr3X2 (X=N,P, As,Sb and Bi) compounds: first principles study

ABSTRACT

Direct bandgap semiconductors are very essential to fulfil the demand for the advancement in optoelectronic devices. Therefore it is important to predict new potential candidates having such unique features. In current work, Sr₃X₂ (X=N, P, As, Sb and Bi) compounds have been reported for the first time by well trusted FP-APW+lo method. For the better prediction of the energy band gap, mBJ is used alongwith routine generalised gradient approximation (GGA). The results show small and direct energy band gaps at Γ-Γ symmetry points with magnitude in the range from 0.62?eV (Sr₃P₂) to zero energy band gap (Sr₃Bi₂). In partial density of state Sr-d state and X-p state are contributed in the band structure. The compounds show mostly covalent bonding nature. The frequecy dependent optical properties in the linear optical range are also investigated.     

Tunability of electronic and optical properties of the Ba–Zr–S system via dimensional reduction

Transition metal sulfide perovskites offer lower band gaps and greater tunability than oxides, along with other desirable properties for applications. Here, we explore dimensional reduction as a tuning strategy using the Ruddlesden–Popper phases in the Ba–Zr–S system as a model. The three-dimensional perovskite BaZrS₃ is a direct gap semiconductor, with a band gap of 1.5 eV suitable for solar photovoltaic application. However, the three known members of the Ruddlesden–Popper series, are all indirect gap materials, and additionally have lower fundamental band gaps. This is accompanied in the case of Ba₂ZrS₄ by a band structure that is more favorable for carrier transport for oriented samples. The layered Ruddlesden–Popper compounds show significantly anisotropic optical properties, as may be expected. The optical spectra show tails at low energy, which may complicate experimental characterization of these materials.     

First-principles study of the optical properties of PbFX (X = Cl,Br, I) compounds in its matlockite-type structure

We present the results of the ab initio theoretical study of the optical properties for PbFX (X = Cl, Br, I) compounds in its matlockite-type structure using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in the WIEN2K code. We employed generalized gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure calculations. Our calculations show that the valence band maximum (VBM) and conduction band minimum (CBM) are located at Z resulting in a direct energy gap. We present calculations of the frequency-dependent complex dielectric function ε( ω) and its zero-frequency limit ε₁ ( 0 ). We find that the values of ε₁ ( 0 ) increases with decreasing the energy gap. The reflectivity spectra and absorption coefficient has been calculated and compared with the available experimental data. The optical properties are analyzed and the origin of some of the peaks in the spectra is discussed in terms of the calculated electronic structure.     

Electronic,optical and thermoelectric investigations of Zintl phase AE3AlAs3 (AE = Sr,Ba): First-principles calculations

First principles calculations were performed to investigate the electronic, optical and thermoelectric properties of Zintl orthorhombic phase AE₃AlAs₃ (AE?=?Sr, Ba) compounds using the full potential linearized augmented plane wave method. The exchange-correlation potential is treated with the generalized gradient approximation (GGA) and modified Becke-Johnson potential (TB-mBJ) to improve the electronic structure calculations. These two compounds are semiconductors have direct band gaps. The optical transitions are investigated via dielectric function along with other related optical constants such as refractive index and absorption coefficient. Thermoelectric properties are examined using the combination of electronic structure and Boltzmann transport theory. In detail, the calculated results of Seebeck coefficient, electrical and thermal conductivity, figure of merit and power factor are reported as a function of temperature.