Relaxation of interstitials in spherical colloidal crystals

Spherical colloidal crystals (CCs) self-assemble on the interface between two liquids. These 2D structures unconventionally combine local hexagonal order and spherical geometry. Nowadays CCs are actively studied by altering their structures. However, the statistical analysis of such experiments results is limited by uniqueness of self-assembled structures and their short lifetime. Here we perform numerical experiments to investigate pathways of CC structure relaxation after the intrusion of interstitial. The process is simulated in the frames of overdamped molecular dynamics method. The relaxation occurs due to interaction with extended topological defects (ETDs) mandatory induced in spherical CCs by their intrinsic Gaussian curvature. Types of relaxation pathways are classified and their probabilities are estimated in the low-temperature region. To analyze the structural changes during the relaxation we use a parent phase approach allowing us to describe the global organization of spherical order. This organization is preserved by only the most typical relaxation pathway resulting in filling one of vacancies integrated inside the ETD areas. In contrast with this pathway the other ones shift the ETDs centers and can strongly reconstruct the internal structure of ETDs. Temperature dependence of the relaxation processes and the mechanism of dislocation unbinding are discussed. Common peculiarities in relaxation of spherical structures and particular fragments of planar hexagonal lattice are found.     

Polycrystalline graphene: Atomic structure,energetics and transport properties

Recent experimental investigations show that large-area samples of graphene tend to be polycrystalline. Physical properties of such samples are strongly affected by the presence of intrinsic topological defects of polycrystalline materials—dislocations and grain boundaries. This article reviews recent progress in understanding dislocations and grain boundaries in graphene. First, a systematic approach towards constructing topological defects in graphene is introduced. Then, the review discusses the formation energies of these defects, stressing the dramatic stabilization of dislocations and small-angle grain boundaries in graphene due to the two-dimensional nature of this material. Finally, the electronic transport properties of polycrystalline graphene are considered, showing that topological defects may present novel opportunities towards engineering electronic devices based on graphene.     

Structure and scaling of helical modes of light

Modes of light that contain topological defects such as screw dislocations can be focused into optical traps with interesting and useful properties. The way in which the intensity distribution within helical modes of light varies with topological charge is discussed, and new scaling predictions for their radial profiles that are consistent with experimental observations are introduced.     

Torsion effects on condensed matter: like a magnetic field but not so much

In this work, we study the effects of torsion due to a uniform distribution of topological defects (screw dislocations) on free spin/carrier dynamics in elastic solids. When a particle moves in such a medium, the effect of the torsion associated to the defect distribution is analogous to that of an applied magnetic field but with subtle differences. Analogue Landau levels are present in this system but they cannot be confined to two dimensions. In the case of spinless carriers, zero modes, which do not appear in the magnetic Landau levels, show up for quantized values of the linear momentum projected on the defects axis. Particles with spin are subjected to a Zeeman-like coupling between spin and torsion, which is insensitive to charge. This suggests the possibility of spin resonance experiments without a magnetic field for charged carriers or quasiparticles without electrical charge, like triplet excitons, for instance.     

Visualizing the charge order and topological defects in an overdoped （Bi,Pb）2Sr2CuO6+x superconductor

Electronic charge order is a symmetry breaking state in high-Tc cuprate superconductors. In scanning tunneling microscopy, the detected charge-order-induced modulation is an electronic response of the charge order. For an overdoped(Bi,Pb)2Sr2CuO6+x sample, we apply scanning tunneling microscopy to explore local properties of the charge order. The ordering wavevector is nondispersive with energy, which can be confirmed and determined. By extracting its order-parameter field, we identify dislocations in the stripe structure of the electronic modulation, which correspond to topological defects with an integer winding number of ±1. Through differential conductance maps over a series of reduced energies, the development of different response of the charge order is observed and a spatial evolution of topological defects is detected. The intensity of charge-order-induced modulation increases with energy and reaches its maximum when approaching the pseudogap energy. In this evolution, the topological defects decrease in density and migrate in space. Furthermore, we observe appearance and disappearance of closely spaced pairs of defects as energy changes. Our experimental results could inspire further studies of the charge order in both high-Tccuprate superconductors and other charge density wave materials.     

Giant fluctuations of topological charge in a disordered wave guide

We study the fluctuations of the total topological charge of a scalar wave propagating in a hollow conducting waveguide filled with scatterers inside. We investigate the dependence of the screening on the scattering mean free path and on the presence of boundaries. Near the cut-off frequencies of the waveguide, screening is strongly suppressed close to boundaries. The resulting huge fluctuations of the total topological charge are very sensitive to the disorder.     

Nonuniversal ordering of spin and charge in stripe phases

We study the interplay of topological excitations in stripe phases: charge dislocations, charge loops, and spin vortices. In two dimensions these defects interact logarithmically on large distances. Using a renormalization-group analysis in the Coulomb-gas representation of these defects, we calculate the phase diagram and the critical properties of the transitions. Depending on the interaction parameters, spin and charge order can disappear at a single transition or in a sequence of two transitions (spin-charge separation). These transitions are nonuniversal with continuously varying critical exponents. We also determine the nature of the points where three phases coexist.     

Structure and dynamics of the Frenkel-Kontorova dislocations in electroconvection in liquid crystals

The Frenkel-Kontorova instability is studied in a 1D lattice of domains formed during electroconvection in nematic liquid crystals twisted by π/2. It is found that generation of defects by such instability can be observed in this model medium. Among other things, it is shown that several types of defects with singular and nonsingular cores, as well as with a extended core, are formed in the 1D domain structure above the electroconvective instability threshold. The extended cores of dislocations are dissociated into a line, and the entire structure is isomorphic to two partial dislocations spaced by a certain distance, which are not observed in free form. Defects with a nonsingular core (zero topological index) exist owing to spiral hydrodynamic flows in convective rolls and are not observed in layers with a homogeneous orientation of molecules. It is shown that the formation of both types of defects follows the scenario of decay of dislocations with extended cores via detachment of nonsingular defects (i.e., discretely); as a result, a dislocation with a singular core is left. “Breather” defects, which are the result of periodic creation and annihilation of dislocations with a topological index of ±1, are also observed. The effect of defects on the transition from the 1D to 2D structures is considered.     

Dislocations as linear topological defects

Dislocations and dislocation plasticity are considered and compared with such dissimilar physical phenomena as superfluidity of liquid helium and type II superconductivity. These phenomena share the common property that the dislocations, as well as quantum vortices in superconductors and superfluid helium, are topological defects. They arise during a phase transformation which is accompanied by spontaneous symmetry breaking caused by Bose condensation of acoustic phonons. The general problems of the evolution of ensembles of linear topological defects and the character of the spatial structures formed by them are discussed.     

Comparison between the EBIC and XBIC contrasts of dislocations and grain boundaries

The X-ray-beam-induced current (XBIC) method is used to calculate the contrasts of dislocations and grain boundaries perpendicular to a surface as a function of the diffusion length of minority charge carriers and the X-ray probe width. The results are compared with the contrasts of the same defects determined via the electron-beam-induced current (EBIC) techniques. It is demonstrated that the XBIC contrasts of grain boundaries and dislocations can be several times greater than those obtained in the EBIC mode in the case of a rather narrow X-ray beam. The XBIC contrast always exceeds that of EBIC in semiconductors with a large diffusion length even if the X-ray beam is rather wide.     

Grain Growth During Superplastic Deformation

Significant grain growth occurring during superplastic deformation is related to the micro-mechanism of superplastic flow. Observations performed on the deformed surface of superplastically deformed tensile and shear Pb-62%Sn samples and bi-axially formed AA7475 samples directly indicate that cooperative grain boundary sliding, i.e. sliding of grain groups, is accompanied by cooperative grain boundary migration that can result in an enhanced grain growth. Such a long range correlation in migration of sliding grain boundaries is related to movement of grain boundary dislocations having a step associated with its core. Observed correlation between grain size and strain measured in different regions of a superplastically formed Ti-alloy part and alignment of grain boundaries along shear surfaces support coupling of grain boundary sliding and migration. A model of grain growth considering climb of cellular dislocations, topological defects in a grain array, has been expanded to incorporate gliding and mixed cellular dislocations.     

Optical vortices in low-mode fibers: III. Dislocation reactions, phase transitions, and topological birefringence

Topological birefringence of waves in optical fibers resulting from the spin-orbit interaction in the field of optical vortices is manifested, as a rule, in the form of Rytov-Magnus unified optical effect. At the same time, the field transformations caused by this effect are not explicitly related to the evolution of phase dislocations of longitudinal and transverse components of the electric and the magnetic fields. This relation can be provided by the dislocation reactions proposed by Berry. As opposed to the Berry’s approach, where dislocation reactions at the wavefront surface are considered, it is suggested in this work that topological reactions at the specific characteristic surface of the wave field formed by the coordinate representation of the transverse components of the Poynting vector be considered. Using the action of topological birefringence in a low-mode optical fiber as an example, it is shown that the course of a topological reaction in a vector optical field is accompanied by rigorous conservation of the total topological index of the characteristic surface and does not depend on the presence of an interface (where topological charges can originate and annihilate). The total topological index of a dislocation reaction is found to be equal to the absolute value of the sum of the topological charge and the spirality of the vector wave field.     

纳米结构中磁斯格明子的原位电子全息研究

斯格明子(skyrmion)磁序结构与晶体微观结构的关联是新型功能磁材料和器件研发的重要问题.本文利用微纳加工技术制备了形状、尺寸均可控的磁纳米结构,通过电子全息术观察定量地分析了斯格明子磁序结构,确定了材料晶格缺陷和空间受限效应对斯格明子磁结构形成和稳定机制的影响,系统地分析了斯格明子基元的磁功能与材料微结构的关联.文中主要探讨了两个问题:1)斯格明子在磁纳米结构中的空间受限效应.重点研究斯格明子磁序随外磁场和温度变化的演变规律,探索其演变过程的拓扑属性和稳定性;2)晶格缺陷对斯格明子磁结构的影响,重点考察晶界原子结构手性反转对斯格明子磁序的影响.这些研究结果可为研发以磁斯格明子为基元的磁信息存储器及自旋电子学器件提供重要实验基础.     

Diffusive fluxes associated with interfacial defeet motion and interaction

The diffusional flux associated with the motion of interfacial defects is described by an equation expressed in terms of the topological parameters which characterise defects, namely their Burgers vectors and step heights, the defect velocity and the concentration of each atomic species in the two adjacent crystals. This expression demonstrates that glide/climb behaviour of grain boundary defects is analogous to motion of dislocations in single crystals; climb motion results if a component of b is perpendicular to the interface plane. However, the situation is more complex in the case of interphase interface defects, but the present approach, which considers the step and dislocation portions of defects separately, enables a straightforward analysis. Several examples are illustrated to show the various possibilities, such as climb motion even when b is parallel to the interface, and glide motion when b is not. The latter case arises in martensitic transformation where the existence of an invariant-plane-strain relation at the interface leads to equal and opposite fluxes to the step and dislocation portions of transformation defects so that overall the motion is diffusionless.Interfacial processes involve the motion and interaction of defects. The present analysis facilitates the consideration of diffusive fluxes associated with defect interaction since the step and dislocation portions can be treated independently. A general expression is derived for the total flux arising, and a particular case, the interaction of transformation dislocations with crystal dislocations which have reached the interface during lattice-invariant deformation in martensite formation, is considered.     

Breatherlike defects and their dynamics in the one-dimensional roll structure of twisted nematics

The dynamics of the nonsingular defects in the periodic structures of the rolls that appear in π/2-twisted nematic liquid crystals during electroconvection is studied experimentally and theoretically. The roll structures in twisted nematics are characterized by the presence of an axial component of the hydrodynamic flow velocity with opposite directions in neighboring rolls. The critical oscillation frequency of structural defects is quantitatively estimated using a nonlinear equation of motion for roll displacements. It is found that a pair of edge dislocations with topological charges of +1 and–1 nucleates and annihilates periodically during the oscillations of a defect with a nonsingular core. Oscillating defects with a zero topological charge is shown to correspond to the solution of the sine-Gordon equation in the form of standing breathers. Asymmetry is detected in the full oscillation cycle of a breather defect, and it is related to the twist symmetry of a twist nematic. This asymmetry is taken into account as effective anisotropic friction. The behavior of a breather on a trap, namely, a classical defect (dislocation), is investigated. Dislocation motion is shown to be anisotropic in the oscillation cycle: in one direction, a dislocation moves regularly; in the second phase, the transition into the initial state proceeds via the decay of the breather into a dipole pair of dislocations of opposite signs followed by their annihilation.     

Effect of dislocation distribution in twin boundaries on the nucleation of microcracks at the twin tip

The effect of dislocation distribution in the boundaries of an arrested twin on the nucleation of microcracks at its tip is investigated. The twin is simulated by a double step pileup (cluster) of twinning dislocations located in adjacent slip planes. The equilibrium equations for dislocations are solved numerically. Clusters with different total numbers of dislocations and with different ratios of the numbers of dislocations at the upper and lower twin boundaries are considered. The formation of microcracks as a result of coalescence of head dislocations according to the force and thermally activated mechanisms is analyzed. The equilibrium configurations of a single twin boundary and of the twin are calculated. It is found that the condition for microcrack formation at the twin tip considerably depends on the ratio of the numbers of dislocations in twin boundaries. In the limit, this condition coincides with the condition of crack formation at the tip of a single twin boundary with the same total number of dislocations. It is shown that thermally activated formation of a microrack corresponds to lower values of the critical stress.     

In-situ transmission electron microscopy observations and molecular dynamics simulations of dislocation-defect interactions in ion-irradiated copper

An in-situ transmission electron microscopy straining technique has been used to investigate the dynamics of dislocation-defect interactions in ion-irradiated copper and the subsequent formation of defect-free channels. Defect removal frequently required interaction with multiple dislocations, although screw dislocations were more efficient at annihilating defects than edge dislocations were. The defect pinning strength was determined from the dislocation curvature prior to breakaway and exhibited values ranging from 15 to 175 MPa. Pre-existing dislocations percolated through the defect field but did not show long-range motion, indicating that they are not responsible for creating the defect-free channels and have a limited contribution to the total plasticity. Defect-free channels were associated with the movement of many dislocations, which originated from grain boundaries or regions of high stress concentration such as at a crack tip. These experimental results are compared with atomistic simulations of the interaction of partial dislocations with defects in copper and a dispersed-barrier-hardening crystal plasticity model to correlate the observations to bulk mechanical properties.     

Dislocations and internal length measurement in continuized crystals. I. Riemannian material space

Distributions of dislocations creating point defects are considered. These point defects are described by a metric tensor, which supplements a Burgers field responsible for dislocations. The metric tensor depends on the distribution of dislocations and defines a Riemannian geometry of the material space of a continuized crystal and thus an internal length measurement in this crystal. The dependence of the distribution of dislocations on the existence of point defects created by these dislocations is modeled by treating the Burgers field as a field defined on the Riemannian material space. Field equations, following from geometric identities, are formulated as balance equations on this Riemannian space and their source terms, responsible for interactions of dislocations and point defects, are identified.     

Electronic properties of graphene with a topological defect

Various types of topological defects in graphene are considered in the framework of the continuum model for long-wavelength electronic excitations, which is based on the Dirac–Weyl equation. The condition for the electronic wave function is specified, and we show that a topological defect can be presented as a pseudomagnetic vortex at the apex of a graphitic nanocone; the flux of the vortex is related to the deficit angle of the cone. The cases of all possible types of pentagonal defects, as well as several types of heptagonal defects (with the numbers of heptagons up to three, and six) are analyzed. The density of states and the ground state charge are determined.