Electrochromism by polarization of semiconducting ionic materials

Electrochromic effects are observed by employing a single mixed ionic and electronic conducting layer in-between two transparent electronic leads. Besides the simplicity of the arrangement, the advantage is the displacement of ions only within one phase rather than across phase boundaries as required by conventional devices. The applied voltage controls the compositions at the two interfaces according to Nernst's law independent of ions being majority or minority charge carriers. Appropriate materials are intrinsic conductors in the unpolarized transparent state which become n-type and p-type conducting at the negative and positive electrode side, respectively. Several materials have been investigated, such as lithiated tungsten oxide and lithium/tantalum co-doped tungsten oxide. Paper presented at the 1st Euroconference on Solid State Ionics, Zakynthos, Greece, 11–18 September 1994.     

Controlled fabrication of gallium nitride nano- and micro-wires by dielectrophoretic force and torque

This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current–voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz–5 MHz.     

Metallization of the semiconducting carbon nanotube by encapsulated bromine molecules

We use ab initio density-functional calculations to investigate the electronic structure of the bromine-adsorbed carbon nanotubes. When a Br₂ molecule is inside the (10,0) carbon nanotube, a trace of electron charge transfers from the nanotube to the Br₂ adsorbate, resulting in an increased Br–Br bond length. When the supercell contains two Br₂ molecules, total energy calculations reveal the formation of a linear chain of bromine atoms inside the carbon nanotube. Electron transfer from the nanotube to the atomic chains of the bromine adsorbates is much enhanced even in large-diameter nanotubes. We suggest that an exposure of the tip-opened carbon nanotube samples to a modest Br₂ partial pressure could result in a strong hole-doping of the nanotube, which makes the semiconducting nanotubes nearly metallic.     

Scattering of excitons by excitons in semiconducting quantum well structures

We have theoretically investigated the scattering of excitons by excitons in a two-dimensional semiconducting quantum well system. The scattering cross sections have been calculated using the Born approximation for both the elastic and inelastic scattering of the excitons by excitons. The threshold for inelastic scattering is increased over the value in a bulk semiconductor because of the enhancement of the exciton binding energy by its confinement. The behavior of the scattering cross section as a function of the energy of relative motion of the excitons is different than in the bulk and the cross section is a more sensitive function of the ratio of the electron and hole masses than in the bulk.     

金刚石、碳纳米管、碳纳米管/纳米金刚石复合物的制备及生长机制研究

采用PECVD技术,通过对基片使用不同的预处理方法和沉积参数,合成了金刚石、碳纳米管及碳纳米管/纳米金刚石复合物.利用SEM,TEM,拉曼光谱对样品的形貌、成分和结构进行了研究.结果表明,在制备样品的过程中,基片的预处理方法和CH4/H2流量比至关重要,它们将影响所制得样品的晶粒大小、形核密度以及微观结构.     

Scattering of a Gaussian electromagnetic beam by a thin semiconducting cylinder

The scattering of a three-dimensional Gaussian electromagnetic beam by a thin (compared to the wavelength) semiconducting cylinder of infinite length is considered. Expressions for the scattered field and for the current induced in the cylinder are obtained. A numerical analysis of the distribution of the secondary current along the cylinder axis was made. It is shown that the dependence of the induced current on the distance along the cylinder axis becomes Gaussian as the aperture of the incident beam is increased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 78–80, January, 1991.     

Refraction of light by a semiconducting prism near the excitonic resonance

Summary The refraction of light by a prism-shaped semiconducting crystal near the exciton resonance is investigated. The angles of deflection and intensities of two simultaneously transmitted waves are calculated. Calculations are performed in the one-dimensional model of Stahl’s coherent wave approach. Numerical results for CdS crystal are in qualitative agreement with experimental data. From comparison of theoretical calculations with measurements the exciton collision time as a function of the frequency of incident light is determined.

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Riassunto Si studia la rifrazione della luce da parte di un cristallo semiconduttore a forma di prisma vicino alla risonanza dell’eccitone. Si calcolano gli angoli di deflessione e le intensità di due onde trasmesse simultaneamente. Si fanno calcoli nel modello unidimensionale dell’approccio d’onda coerente di Stahl. I risultati numerici per il cristallo CdS sono in accordo qualitativo con i dati sperimentali. Si determina il tempo di collisione dell’eccitone, mediante un confronto tra calcoli teorici e misurazioni, in funzione della frequenza della luce incidente.

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Резюме Исследуется преломление света сверхпроводяшей кристаллической призмой вблизи экситонного резонанса. Вычисляются углы отклонения и интенсивности двух одновременно прошедших волн. Вычисления проводятся в рамках одномерной модели. Численные результаты для кристалла CdS качественно согласуются с экспериментальными данными. Из сравнения теоретических вычислений с результатами измерений определяется время соударения экситонов, как функция частоты падаюшего света.

     

Luminescence of semiconducting VO2

The cathodoluminescence spectrum of VO₂ in the low temperature semiconducting phase has been observed. It contains typically two lines at 2.67 and 3.15 eV. An interpretation of these lines in terms of 3d→2p transitions is proposed and yields a d level splitting of the order of 0.5 eV.     

TEM-nanoindentation studies of semiconducting structures

This paper reviews the application of nanoindentation coupled with transmission electron microscopy (TEM) to investigations of the plastic behaviour of semiconducting structures and its implication for device design. Instrumented nanoindentation has been developed to extract the mechanical behaviour of small volumes scaled to those encountered in semiconductor heterostructures. We illustrate that TEM is a powerful complementary tool for the study of local plasticity induced by nanoindentation. TEM-nanoindentation allows for detailed understanding of the plastic deformation in semiconducting structures and opens practical routes for improvement of devices. Performances of heterostructures are deteriously affected by dislocations that relax the lattice mismatched layers. Different ways to obtain compliant substructures are being developed in order to concentrate the plastic relaxation underneath the heterostructure. Such approaches allow for mechanical design of micro- and opto-electronic devices to be considered throughout the fabrication process.     

Composition profile in semiconducting alloys by second derivative wavelength modulation

The wavelength (λ) and composition (x) modulations are used simultaneously in order to obtain the second derivative ∂² R/∂λ∂x of the reflectivity. A great sensitivity to a small composition difference is obtained. This method is applied to the determination of the compositional profile for a ternary alloy Mg _x Zn_1−x Te withx<0.01. A good agreement is observed with the theoretical profile calculated on the basis of a regular associated solution model.     

Scattering of excitons by free carriers in semiconducting quantum well structures

We have theoretically investigated the scattering of excitons by free electrons and holes in a two-dimensional semiconducting quantum well system. The scattering cross-sections have been calculated using the Born approximation for both the elastic and inelastic scattering of the excitons by the free carriers. The threshold for inelastic scattering is increased over the value in a bulk semiconductor because of the enhancement of the exciton binding energy by its confinement. The behavior of the scattering cross-section as a function of the energy of relative motion of the free carriers and the excitons is different than in the bulk and the cross-section is a more sensitive function of the ratio of the electron and hole masses than in the bulk. In fact, the scattering of light hole excitons is suppressed relative to that of heavy hole excitons by several orders of magnitude.     

Thermoelectric properties of Bi-Sb semiconducting alloys prepared by quenching and annealing

Bi_100−xSb_x (x=8-17) alloys were prepared by direct melting of constituent elements, which was followed by quenching and annealing. The synthesis of high-homogeneity alloys was confirmed by X-ray diffraction, differential thermal analyses and electron microprobe analysis. The semiconducting and thermoelectric properties of the samples were investigated by measuring Hall coefficient, electrical resistivity and Seebeck coefficient in the temperature range from 20 to 300 K for both the as-quenched and annealing samples. The properties change gradually with the Sb concentration x, which is attributed to the variation of the energy gap. The Hall mobility was enhanced by annealing, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, large values of about 8.5 mW/mK² for the power factor were obtained in the annealed alloys of x=8,12, and 14.     

An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

An improved planar-gate triode with carbon nanotubes (CNTs) field emitters has been successfully fabricated by conventional photolithography, screen printing and electrophoretic deposition (EPD). In this structure, cathode electrodes and ITO arrays linked with gate electrodes were interdigitated and paralleled on the same plane although the gate electrodes and cathode electrodes were isolated by dielectric layer, a so-called improved planar-gate triode structure. An electrophoretic process was developed to selectively deposit CNTs field emitters onto cathode electrodes in the CNTs suspension by an applied voltage between the gate electrodes and cathode electrodes. The optical microscopy and FESEM image showed that the CNTs emitters with the uniform packing density were selectively defined onto the cathode electrodes. In addition, field emission characteristics of an improved planar-gate triode with CNTs field emitters were investigated. The experiment results indicated that the turn-on voltage of this triode structure at current density of 1 μA/cm² was approximately 55 V. The anode current and gate current came to 396 μA and 325 μA, at gate voltage and anode voltage of 100 V and 4000 V, respectively and at the anode-cathode spacing of 2000 μm. The emission image became brighter and the luminous image with dot matrix on the anode plate obviously increased with the increase of the gate voltage. Moreover, the emission current fluctuation was smaller than 5% for 11 h, which indicated that the improved planar-gate triode has a good field emission performance and long lifetime.     

Excitonic susceptibility of semiconducting crystals influenced by a uniform electric field

Summary The Stahl’s polariton equations for crystals, influenced by a uniform electric field, can be solved by means of an appropriate Green’s function. The Green’s function is calculated for the half-space geometry and the field directed along the z-axis. Using its asymptotic form a formula for the excitonic susceptibility is derived.     

Thin films of semiconducting lithium ferrite produced by pulsed laser deposition

Thin films of lithium ferrite (Li_0.5Fe_2.5O₄) have been deposited on (0 0 1) Al₂O₃ by pulsed laser deposition, with substrate deposition temperatures ranging between 500 and 800 °C, and oxygen pressures between 1 × 10⁻¹ and 4 × 10⁻⁷ mbar. X-ray diffraction shows that films grow with a (1 1 1) orientation. Conversion electron Mössbauer spectra for the high-pressure films show a single sextet with a hyperfine field of 49 T, while the low-pressure films show two sextets with hyperfine fields of 47 and 49 T. The spectra also reveal paramagnetic ferric iron in both types of films. Magnetization measurements of the films show a saturation magnetization of between 1.7 and 3.1μ_B per formula unit and a coercivity of between 10 and 44 mT. The films prepared under the lower oxygen pressures are semiconducting with resistivities of 2 × 10⁻² to 8 × 10⁻² Ω cm. They exhibit an anomalous Hall effect with p-type conduction at 175 K.     

Formation of fibrous filtering membranes by electrospinning

A technique for production of fibrous materials containing layers of variable-thickness fibers is considered. Membranes in the form of alternating layers of thin and thick fibers are obtained from cellulose acetate and fluoroplastic solutions. The layers of thin fibers specify the filtering properties of the membranes, and those of thick fibers impart them mechanical strength.     

Differentiation of phase objects by spatial filtering

A filter function has been theoretically arrived at, which in a coherent optical system produces an irradiance image distribution that is quasi-linear to the first derivative of the phase of a purely phase varying object. The filter function is generated with the aid of a computer-controlled plotter and experimental results of phase differentiation are presented.     

Speckle reduction by energy time-frequency filtering

Structural noise is a very important limitation to the visibility of flaw echoes in ultrasonic testing and evaluation of highly scattering materials. In order to enhance the signal-to-noise ratio, different algorithms have been developed. One of these techniques is based on filtering the spectrum low band of the received echo to obtain a significant improvement of the defect visibility. Based on this idea, in this work a new time-frequency technique is presented. In this method, block-processing autoregressive techniques are used to estimate the instantaneous center frequency of the traveling wave. From this information, a time-frequency filter is designed tuned at half the estimated instantaneous center frequency. Experimental results and the comparison with the non-time-frequency filtering technique are also included, showing that the proposed method has an excellent performance on SNR enhancement.     

Super-resolution by pupil plane phase filtering

Resolution capability of any optical imaging system is limited by residual aberrations as well as diffraction effects. Overcoming this fundamental limit is called super-resolution. Several new paradigms for super-resolution in optical systems use ‘a posteriori’ digital image processing. In these ventures the three-dimensional point spread function (PSF) of the lens plays a key role in image acquisition. A straightforward tailoring of the PSF can be performed by appropriate pupil plane filtering. With a brief review of the state-of-art in this research area, this paper dwells upon the inverse problem of global optimization of the pupil function by phase filtering in accordance with the desired PSF.