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1.
橙红色荧光粉BaZnP2O7∶Eu3+的制备与发光特性   总被引:3,自引:0,他引:3  
采用高温固相法合成了BaZnP2O7∶Eu3+荧光粉, 并对其发光性质进行了研究.  相似文献   

2.
采用高温固相法合成R2-x(MoO4)3∶xEu3+(R=Y,Gd)系列红色荧光粉.研究了煅烧温度、助熔剂的含量和Eu3+的掺杂量对样品发光性能的影响,并对样品的物相组成、激发和发射光谱进行分析.结果表明,样品Gd0.6(MoO4)3∶1.4Eu3+在800℃左右煅烧时呈单斜晶结构,当煅烧温度提高到950℃左右,呈正交斜晶结构;样品Y0.2(MoO4)3∶1.8Eu3+在800℃左右煅烧时已经完全形成了正交结构,当煅烧温度升高到1000℃左右时,其正交结构得到保持,没有发生相变.其中,助熔剂NH4Cl的含量占样品总量的3%,煅烧温度为1000℃,保温3h得到的样品Gd0.6(MoO4)3∶1.4Eu3+和Y0.2(MoO4)3∶1.8Eu3+的发光性能达到最佳.另外,由激发和发射光谱分析表明,该荧光粉可以被近紫外光(395nm)和蓝光(465nm)有效激发,发射峰值位于612nm的红光,对应于Eu3+离子的5 D0→7 F2跃迁,是一种可应用在紫外光和蓝光芯片激发产生白光LED的红色荧光粉.  相似文献   

3.
电荷补偿对红色LED用荧光粉体的荧光性能改进   总被引:3,自引:2,他引:3  
通过高温动态球磨固相法, 采用三种电荷补偿方式: (a) 3Ca2+/Sr2+→2Eu3+/Gd3++空穴; (b) 2Ca2+/Sr2+→2Eu3+/Gd3++M+(M+=Li+, Na+, K+中的一种或多种离子); (c) Ca2+/Sr2+→2Eu3+/Gd3++X-(X-=F-, Cl-, Br-, I-), 制备了红色发光二极管(LED)荧光粉体Ca0.54Sr0.16-δEu0.08Gd0.12(MoO4)0.2(WO4)0.8(δ=0-0.16). 研究表明, 方法(b)是一种较优的电荷补偿方式. 利用此荧光粉和390-405 nm发射LED芯制备了红色LED, 当正向驱动电流为20 mA时, 色坐标为x=0.66, y=0.33; 色纯度100%; 光强达6200 cd·m2; 发光效率约为95 lm·W-1. 器件的色坐标和显色指数等参数随正向驱动电流的变化起伏很小, 颜色稳定. 该红光荧光粉在新一代白色LED照明领域具有广阔应用前景.  相似文献   

4.
Sr2SiO4:Eu3+发光材料的制备及其光谱特性   总被引:3,自引:0,他引:3  
采用溶胶-凝胶法制备了Sr2SiO4:Eu3+发光材料. 测量了Sr2SiO4:Eu3+材料的激发与发射光谱, 发射光谱主峰位于618 nm处;监测618 nm发射峰时, 所得激发光谱主峰分别为320、397、464 和518 nm. 研究了Sr2SiO4:Eu3+材料在618 nm的主发射峰强度随Eu3+浓度的变化情况. 结果显示, 随Eu3+浓度的增大, 发射峰强度先增大; 当Eu3+浓度为7%时(x), 峰值强度最大; 而后随Eu3+浓度的增大, 峰值强度减小. 在Eu3+浓度为7%的情况下, 研究了电荷补偿剂Li+的掺杂浓度(x(Li+))对Sr2SiO4:Eu3+材料发射光谱强度的影响. 结果显示, 随x(Li+)的增大, 材料发射光谱强度先增大后减小, 当x(Li+)为8%时, 峰值强度最大.  相似文献   

5.
As an Hg-free lamp using phosphor, the Bi3+ and Eu3+ co-doped Y2O2S phosphors were prepared and their luminescence properties under vacuum ultraviolet(VUV) excitation were investigated. The VUV photoluminescent intensity of Y2O2S:Eu3+ was weak, however, considerably stronger red emission at 626 nm with good color purity was observed in Y2O2S:Eu3+,Bi3+ systems. Investigation on the photoluminescence reveals that the strong VUV luminescence of Y2O2S:Eu3+,Bi3+ at 147 nm is mainly because the Bi3+ acts as a med...  相似文献   

6.
以化学沉淀法制备单相的铕离子掺杂硼铝酸盐红色荧光粉YAl3(BO3)4∶Eu3+,考察了焙烧温度、掺铕量等因素对材料性能的影响,用X射线衍射、扫描电镜、激发光谱和发射光谱对荧光粉的结构、形貌和发光性能进行了表征.以尿素为沉淀剂,900℃焙烧沉淀前驱体可得到单相荧光粉YAl3(BO3)4∶Eu3+,反应温度比传统高温固相法降低了300℃;沉淀法制备的荧光粉粒径分布范围小,无团聚现象,粒径约300nm.掺铕量为10%(物质的量比)时发光强度最大.在260nm的紫外光激发下,Eu3+的5 D0→7 F2的电偶极跃迁最强,发射光为618nm的红光.  相似文献   

7.
用高温固相反应法合成了铌酸根NbO^3-4和Eu^3 共掺杂的正钽酸盐化合物Y1-xEuxTa1-yNbyO4,研究该体系中紫外光和X射线激发下的发光性能,研究表明,在紫外光激发下,YTaO4:Nb,Eu是一种比较有效的红色发光材料,激发能可以通过NbO^3 4离子传递给Eu^3 ,随钽酸盐中NbO^3-4基团浓度的增中,化合物的结构从M'型YTaO4变成褐钇铌型YNbO4结构,它的发光性质也随之改变。  相似文献   

8.
解文杰  徐鑫 《无机化学学报》2011,27(9):1738-1742
通过固相反应制备了系列Ca掺杂的Ba2Al2Si10N14O4∶Eu2+绿色荧光粉,发现当半径较大的Ba被Ca取代后导致了晶格的收缩,通过X射线衍射(XRD)测量和Unitcell软件计算发现Ca的最大掺杂量在20%。Ca掺入Eu0.4Ba1.6Al2Si10N14O4荧光粉后,可有效地提高光转换性能,并使激发光谱发生一定程度的红移和宽化,从而被近紫外宽波段光有效激发,与近紫外LED的发射光谱匹配。同时Ca的掺杂也使发射光谱发生了可控的红移,可以由520 nm的绿光红移至548 nm的黄光区域。进一步发现Eu2+的淬灭浓度随着20%Ca的掺入而降低,这是由于Ca掺入导致的晶格收缩使Eu2+离子间距离减小。最后在CIE色度图中对不同Ca,Eu浓度的荧光粉的色坐标位置进行比较,发现可通过Ca,Eu浓度的变化在很大范围内调制荧光粉的发光性能。  相似文献   

9.
As an Hg-free lamp using phosphor,the Bi3+ and Eu3+ co-doped Y2O2S phosphors were prepared and their luminescence properties under vacuum uitraviolet(VUV) excitation were investigated.The VUV photolumineseent intensity of Y2O2S:Eu3+ was weak,however,considerably stronger red emission at 626 nm with good color purity was observed in Y2O2S:Eu3+,Bi3+ systems.Investigation on the photoluminescence reveals that the strong VUV luminescence of Y2O2S:Eu3+,Bi3+ at 147 nm is mainly because the Bi3+ acts as a medium and effectively performs the energy transfer process: Y3+-O2→Bi3+→Eu3+,while the intense emission band at 172 nm is attributed to the absorption of the characteristic 1So-1P1 transition of Bi3+ and the direct energy transfer from Bi3+ to Eu3+.The Y2O2S:Eu3+,Bi3+ shows excellent VUV optical properties compared with the commercial (Y,Gd)BO3:Eu3+.Thus,the Y2O2S:Eu3+,Bi3+ can be a potential red VUV-excited candidate applied in Hg-free lamps for backlight of liquid crystal display.  相似文献   

10.
Sr2SiO4∶Dy3+材料制备及发光特性   总被引:2,自引:1,他引:1  
采用高温固相法制备了Sr2SiO4∶Dy3+发光材料. 在365 nm紫外光激发下, 测得Sr2SiO4∶Dy3+材料的发射光谱为一个多峰宽谱, 主峰分别为486, 575和665 nm; 监测575 nm的发射峰, 所得材料的激发光谱为一个多峰宽谱, 主峰分别为331, 361, 371, 397, 435, 461和478 nm. 研究了Dy3+掺杂浓度对Sr2SiO4∶Dy3+材料发射光谱强度的影响. 研究结果显示, 随着Dy3+浓度的增大, 黄、蓝发射峰比值(Y/B)也逐渐增大; 随着Dy3+浓度的增大, 575 nm发射峰强度先增大后减小. 加入电荷补偿剂Li+, Na+和K+均提高了Sr2SiO4∶Dy3+材料的发射光谱强度, 其中以Li+的情况最为明显.  相似文献   

11.
使用NH4HCO3-NH3.H2O混合沉淀剂,采用化学共沉淀法合成(Ca1-x-yLuy)MoO4:xEu3+红色荧光粉,通过XRD、EDS、荧光光谱和CIE色度图研究该荧光粉的晶体结构、成分组成及发光性能。结果表明,实验按照理论化学计量比成功合成了(Ca1-x-yLuy)MoO4:xEu3+红色荧光粉,该荧光粉为CaMoO4白钨矿结构;(Ca1-x-yLuy)MoO4:xEu3+具有7F0→5L6(394 nm)和7F0→5D2(465 nm)的强电子吸收,且在613 nm处可发射高强度红光,其色坐标为(0.666 5,0.332 9),明显优于传统的Y2O2S:Eu3+红色荧光粉;此外,当Lu含量为30mol%时,荧光粉发光强度最佳。  相似文献   

12.
采用固相法制备了蓝白色LiSrBO3∶Ce3+材料. 测得LiSrBO3∶Ce3+材料的发射光谱为一个主峰位于436 nm的非对称单峰宽谱; 监测436 nm发射峰时所得材料的激发光谱为一个主峰位于369 nm的宽谱. 利用Van Uitert公式计算了Ce3+取代LiSrBO3中Sr时所占晶体学格位, 得出433 nm发射带归属于九配位的Ce3+发射, 469 nm发射带起源于八配位的Ce3+发射. 研究了Ce3+浓度对LiSrBO3∶Ce3+材料发光强度的影响, 研究结果显示, 随着Ce3+浓度的增大, 发光强度呈现先增大后减小的趋势, 在Ce3+摩尔分数为3%时到达峰值, 根据Dexter理论, 其浓度猝灭机理为电偶极-偶极相互作用. 引入Li+, Na+和K+作为电荷补偿剂时发现, LiSrBO3∶Ce3+材料的发射光谱强度均得到了明显的增强. 利用InGaN管芯(370 nm)激发LiSrBO3∶Ce3+材料时, 获得了很好的蓝白光发射, 色坐标为(x=0.289, y=0.293).  相似文献   

13.
空气中合成M2B4O7:Eu3+(M=Na,K)荧光体及其性质表征   总被引:7,自引:0,他引:7  
以M2B4O7(M=Na,K)为基质,在空气中掺杂稀土元素Eu3+得到了Na2B4O7:Eu3+和K2B4O7:Eu3+荧光体.探讨了体系的烧结条件和荧光性质,分析了晶体的结构.结果表明,虽然两种体系的最佳合成条件不同,但是体系中都同时存在[BO4]和[BO3]结构;稀土离子Eu3+的发光以电偶极跃迁5D0-7F2为主,处于非中心对称的格位上,并且可以很好地存在于基质中,Na2B4O7:Eu3+具有较强的发光强度.  相似文献   

14.
The luminescent materials SrB4O7: Eu and BaB8O13: Eu were synthesized, and the valence states of europium in the materials were measured by means of XANES at Eu-L3 edge. It is found that the Eu3 and Eu2 ions are all present in the materials, and more Eu3 ions can be reduced in SrB4O7: Eu than in BaB8O13:Eu. The excitation and emission spectra of Eu3 in SrB4O7: Eu and BaB8O13:Eu were determined.  相似文献   

15.
Ce3+,Tb3+,Eu3+共掺杂Sr2MgSi2O7体系的白色发光和能量传递机理   总被引:1,自引:0,他引:1  
通过正交试验,采用高温固相法制备了Sr2-x-y-zMgSi2O7∶xCe3+,yTb3+,zEu3+系列样品.使用X射线衍射仪和荧光光谱仪表征了样品的物相和发光性质,并讨论了Ce3+-Tb3+-Eu3+共掺杂Sr2MgSi2O7体系中的能量传递过程.实验结果表明,在327 nm波长激发下,所合成荧光粉的发射峰主要位于387 nm(蓝紫)、542nm(绿)和611 nm(红)处;分别以387,542和611 nm为监控波长,所得激发光谱显示荧光粉在327 nm处有最好的激发.在327 nm光激发下,系列样品发光进入白光区.最优化的荧光粉为Sr1.91MgSi2O7∶0.01Ce3+,0.05Tb3+,0.03Eu3+,其色坐标为(0.337,0.313),是一种潜在的发光二极管(LED)用白色荧光粉.  相似文献   

16.
采用均相沉淀法制备了Ag@SiO2@(Y,RE)(OH)CO3.H2O(RE=Eu,Tb)核壳结构微球,经过700℃焙烧后成功制备出Ag@SiO2@Y2O3:RE3+(RE=Eu,Tb)核壳结构发光材料。XRD谱图表明Ag核具有结晶良好的面心立方结构;SiO2层为无定型;Y2O3层为立方晶系。FTIR谱图表明核壳之间以化学键相结合。TEM照片表明合成了核壳结构的表面光滑的复合微球,分散良好,大小均匀,Ag核的粒径分布为50±20 nm;SiO2层的厚度为20~30 nm;Y2O3:RE3+(RE=Eu,Tb)层厚度约为125 nm。电子衍射图像表明Ag@SiO2@Y2O3:RE3+(RE=Eu,Tb)为多晶结构。UV-Vis光谱表明表面包覆使Ag离子的等离子体共振吸收峰发生了红移。荧光光谱表明Ag@SiO2@Y2O3:Eu3+具有Eu3+的特征红光发射,Ag@SiO2@Y2O3:Tb3+具有Tb3+的特征绿光发射,但是发光强度均比纯的Y2O3:RE3+有所减弱,说明贵金属的引入对稀土Y2O3:RE3+(RE=Eu,Tb)的发光起到了荧光猝灭的作用。  相似文献   

17.
One-dimensional La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) microfibers were fabricated by a simple and cost-effective electrospinning method. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and low voltage cathodoluminescence (CL) as well as kinetic decay were used to characterize the resulting samples. SEM and TEM results indicated that the diameter of the microfibers annealed at 1000 °C for 3 h was 200-245 nm. The microfibers were further composed of fine and closely linked nanoparticles. La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) phosphors showed the characteristic emission of Ce(3+) (5d → 4f), Eu(3+) ((5)D(0)→(7)F(J)) and Tb(3+) ((5)D(3,4)→(7)F(J)) under ultraviolet excitation and low-voltage electron beams (3-5 kV) excitation. An energy transfer from Ce(3+) to Tb(3+) was observed in the La(9.33)(SiO(4))(6)O(2): Ce(3+), Tb(3+) phosphor under ultraviolet excitation and low-voltage electron beam excitation. Luminescence mechanisms were proposed to explain the observed phenomena. Blue, red and green emission can be realized in La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) microfibers by changing the doping ions. So the La(9.33)(SiO(4))(6)O(2): Ln(3+) (Ln = Ce, Eu, Tb) phosphors have potential applications in full-color field emission displays.  相似文献   

18.
A novel blue-emitting phosphor, LiSrPO4:Eu2+, was prepared by the solid-state reaction and X-ray powder diffraction (XRD) analysis confirmed the formation of LiSrPO4:Eu2+. Photoluminescence (PL) results showed that the phosphor can be efficiently excited by UV-visible light from 250 to 440 nm, and exhibited bright blue emission. The effects of the doped-Eu2+ concentration in LiSrPO4:Eu2+ on the PL were investigated in detail. The results showed that the relative PL intensity increases with Eu2+-concentration increasing until a maximum intensity is reached, and then it decreases due to concentration quenching and a red-shift appears, which are explained satisfactorily with the luminescent theory. Upon excited with 396 nm light, the present synthesized phosphor has higher emission intensity than that from the commercial blue phosphor, BaMgAl10O17:Eu2+. Bright blue light-emitting diodes were fabricated by the combination of the synthesized LiSrPO4:Eu2+ with ∼397 nm emitting InGaN-based chips.  相似文献   

19.
合成了2个新的配合物Eu2(btb)3(H2O)4(1)和Eu2(btb)3(phen)2(2)[H2btb=4,4′-双(4″,4″,4″, -三氟代 - 1″,3″-二氧代丁基)联苯, phen=1,10-邻菲罗啉]. 采用元素分析、红外光谱、紫外光谱和快原子轰击质谱表征了2个配合物的结构. 在近紫外光激发下, 配合物1和2都发射出强的铕离子特征红光. 对614 nm 红光进行监控, 其激发光谱在395 nm处具有最大的激发强度, 与InGaN芯片发射的近紫外光激发相匹配. 将配合物1和2与395 nm 发射的InGaN芯片进行组合制备了红色发光二极管. 在配合物和硅树脂的质量比为1∶25的情况下, 2个红色发光二极管的色坐标分别为x1=0.5210, y1=0.2285(配合物1); x2=0.5835和y2=0.2857(配合物 2), 位于标准的国际色坐标红色区域; 器件的发光效率分别为0.65和0.76 lm/W. 研究结果表明, 配合物1和2是制作白光二极管可供选用的红色发光材料.  相似文献   

20.
采用一步反应法制备了BaFBr:Eu2+,Ce3+X射线影像存储材料.通过荧光光谱和光激励发光谱研究了材料的光致发光及其经X射线辐照后的光激励发光性质.结果发现,Ce离子的掺入使得BaFBr:Eu2+的发光性能明显增强,存在Ce3+离子向Eu2+离子的能量传递,Ce离子的掺杂浓度为0.7%(摩尔分数)左右时可得到较高的光致发光及光激励发光强度.且掺入Ce3+后,可以有效的形成能稳定存储的较低能级的电子陷阱,使得在信息读出过程中所需激励光能量降低,从而使得读出光的能量与价廉、便携的长波激光器的读出波长匹配得更好.  相似文献   

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