Crystallization and optical properties of CaWO4 and SrWO4

Single crystals of calcium tungstate and strontium tungstate have been grown by double decomposition flux reaction technique using lithium chloride as flux. Growth conditions are optimized to synthesize well faceted crystals. Effect of primary and secondary flux density in the growth charge has been studied. Thermogravimetric study reveals that the grown crystals are highly stable in the temperature range 25 – 1000°C. Analysis of optical absorption normal to the ab‐plane in the spectral range of 200 – 800 nm reveals the true absorption edge, the nature of transition being the allowed indirect one at 4.60 eV and 4.56 eV respectively for CaWO₄ and SrWO₄. The crystals have been characterized by determining useful pertinent optical and dielectric parameters. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CaWO4晶体振动谱的理论分析

本文借助商群方法对CaWO4晶体的振动谱进行了理论分析,明确地指出了红外吸收光谱(IR)和喇曼散射光谱(R)的激活结果.利用总散射截面和喇曼张量,对如何测量该晶体的谱线问题,在几何配置方面做了深入的讨论.     

Inclusions in flux-grown crystals of corundum

Single crystals of corundum were grown by the seeded techniques, such as stationary, seed-rotation, and top-seeded, from molten Na- or Li-cryolite (Na₃AlF₆ or Li₃AlF₆) flux. Inclusions, which are flux inclusion, negative crystal, and cavity, included in the crystals are examined under an optical microscope, and the formation mechanism and the shape of them depending on the differences of growth technique and growth condition are briefly described.     

Studies on macrospiral observed in flux-grown YAG single crystals

Presence of spirals with unit cell dimension step height has been established over a large variety of materials. But often spirals with large step height are also being reported. In this paper such a macrospiral observed over the barium based flux grown YAG crystals is reported. Nature of this depressed spiral and growth conditions are discussed. A possible formation mechanism is suggested for the development of spiral with large step height of giant step, which is termed as macrospiral.     

Glow curves of flux-grown NaMgF3 crystals

Glow curves and optical absorption spectra of X-irradiated flux grown crystals are studied. Two glow peaks at 370, 585 K and three shoulders at 420, 540 and 610 K are obtained. Optical absorption studies reveal two absorption bands at 405 and 475 nm and a well defined peak at 295 nm. Room temperature annealing and bleaching studies have suggested that the glow peaks at 370 and 585 K may correspond to impurities and F-centers of 295 nm band respectively. The other shoulders at 420, 540 and 610 K are attributed to other F-aggregate centers. The glow peaks are analysed using first order kinetics.     

Edge-defined film-fed growth of Yb:YVO4 single crystal plates

The applicability of the edge-defined film-fed growth (EFG) technique for Yb_xY_(1−x)VO₄ (x=0.05, 0.1 and 1) was approved by successful growth of crystals up to 80 mm in length as the thin plates. Low-angle grain boundaries and the crystal coloration as main defects were found. Optimal seed orientation was suggested on the strength of vanadate crystal plate morphology. Optical properties, chemical composition and the crystalline quality were investigated.     

Growth of large oriented metal single crystal plates

A method of growing large oriented metal single crystal plates is presented. Crystal plates without any mechanical treatment are suitable for neutron diffraction work. The mosaic spread of these crystals is smaller than that of cylindrical single crystals.     

Composite phase plates with elements of different thickness

A calculation method is proposed for composite phase plates consisting of two elements of different thickness. These crystal-optics elements make it possible to vary the type of polarization of radiation. For the known values of the phase shifts produced by the elements, the required type of polarization is attained by specific orientation of the fast axes of both elements with respect to the direction of maximum transmission of the polarizer. The azimuthal angles of the fast axes of these elements are set according to the formulas listed below.     

Na+对制备Al4SiC4/Al4O4C复合耐火材料的影响

以焦宝石、活性炭和铝粉为原料,添加Na2CO3制备Al4SiC4/Al4O4C复合耐火材料.采用化学分析、XRD和SEM等测试技术,研究了Na+对材料物相组成和显微结构的影响.结果表明:添加Na2CO3加速了Al2O3和活性炭的反应,促进了Al4O4C的生成.未添加Na2CO3时生成的Al4SiC4晶粒表面光滑,添加Na2CO3后Al4SiC4晶粒粗糙、凹凸,缺陷明显增加.此外,未添加Na2CO3的试样中生成的Al4O4C呈短纤维状,添加Na2CO3后全部转变为细小颗粒.     

X-ray Studies on the Liquid Crystalline Phases of the 4-[4-n-Heptyloxy-Benzylidene-Amino]4'-cyanobiphenyl

By means of X-ray diffraction studies of oriented and non-oriented samples the lattice parameters of the orthorhombic cell of the S_E phase as well as of the hexagonal cell of the S_B phase were determined. By packing considerations a bimolecular building unit with oppositely arranged cyano-groups was assumed in the case of the S_E phase. The S_B phase is characterized by an ABAB sequence of the smectic layers in which the molecules are hexagonal arranged. The increasing mobility of the molecules at increasing temperature offers the possibility for a part of the molecules to slide in a more stable dimerized form. In the N_R and S_A phase the existence of monomers as well as of dimers is assumed. In this way a conception of the phase transitions S_E → S_B → N_R → S_A is given on the base of a decrease by steps of the dipole-dipole repulsion.     

Fractal processing for an analysis of the quality and resistivity of large semiconductor plates

A nondestructive method is suggested for the analysis of the quality and resistivity inhomogeneity of semiconductor plates in an ionization system with a SI GaAs semiconductor plate. At the same time, a device for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution throughout the bulk material in high‐resistivity and photosensitive semiconductor plates of large diameter (50‐100 mm) is described. Semiconductor plates with the resistivity from 10⁵ to 10⁹ Ωcm can be analyzed in the proposed device. The possibilities of the device have been evaluated, i.e. a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission intensity when a current is passed through an ionization cell. For the quantitative analysis of quality and resistivity inhomogeneity of semiconductor plates, fractal dimension analysis was used following the records of the discharge light emission intensity. The quality of plates was analyzed using both the profile and spatial distributed light emission intensity data showing the internal inhomogeneity in the semiconductor plate. Thus, by using fractal concept, the surface quality of the high‐resistivity semiconductor plate can be assessed exactly and the size and location of the internal inhomogeneities in the semiconductor plate to be ascertained. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

YVO4晶体缺陷分析

运用同步辐射白光X射线形貌术分析了YVO4的结构和缺陷行为,也观测了YVO4晶体(001)、(100)面的缺陷.发现在(001)面出现应力生长区、沿[100]方向的位错线以及晶体中镶嵌结构.运用白光形貌术拍摄到的劳埃斑,证明晶体为四方晶系.确定了小角晶界是引起多晶的主要原因.采用电子探针仪分析了散射颗粒形成是由杂质铁和铝的引入造成.     

PbWO4晶体吸收中心的研究

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法计算了PbWO4晶体中与吸收中心相关的本征缺陷态密度分布,并运用过渡态方法计算了激发能.结果表明:PbWO4晶体中WO3+Vo缺陷的O2pW5d跃迁可以引起350nm和420nm附近的吸收,并且发现VPb的存在可以使WO2-4基团的禁带宽度明显变小.     

激光晶体镁橄榄石结构探讨

镁橄榄石Mg2 SiO4 :Cr4 + 是重要的激光晶体 ,它的发射带为 85 0～ 14 0 0nm ,函盖激光通讯的两个窗口 1.3μm和 1.5 μm ,是迄今为止所发现的终端声子激光晶体中光谱范围最宽的一种。此外 ,金绿宝石铝酸铍BeAl2 O4 :Cr3+ 也是一种可调谐激光晶体 ,目前在红光区输出能量最高。这两种晶体同属于镁橄榄石型结构。但是在一些教科书和文献中 ,这个结构却被描述得相当混乱。主要有以下几种表述 :(1)镁橄榄石属斜方晶系Pbnm空间群 ,a =0 .4 76nm ,b =1.0 2 1nm ,C =0 .5 99nm[1 5] 。(2 )橄榄石结构 (Mg ,Fe) 2 SiO4 属斜方晶系 ,空间群为D2…     

CePO4含量对可加工 Ce-ZrO2/CePO4陶瓷材料性能的影响

研究了CePO4含量对Ce-ZrO2/CePO4陶瓷材料性能的影响.结果表明,当CePO4含量较少时,材料的力学性能变化不大,可加工指数增大,当CePO4含量大于25;,二者匀下降.可见CePO4的含量为25;时,材料的加工性与其力学性能结合的最好;同时研究了不同的CePO4含量引起材料的断口、表面形貌的变化及对材料断裂性能的影响.     

Dielectric studies on binary mixtures containing 4-trans-4′ -n-hexyl-cyclohexyl-isothiocyanato-benzene

We have studied binary mixtures with an induced smectic phase of 4-trans-4′ -n-hexylcycohexyl isothiocyanatobenzene (6CHBT) with 4-n-ethyl-4′-pentylazoxybenzene (EPAB) by means of dielectric, microscopic and refractometric measurements. The effective values of components p ⟂ and p∥ of the dipole moment per one molecule of the mixture have been calculated from values of ϵ ⟂ and ϵ ∥. As a result of our studies, we have established that the heterocomplexes formed in the mixture are so weak that they do not cause any essential changes in the distribution of molecule charges. The observed deviations from additivity of the dielectric constant of the mixture are caused solely by a non-additive behavior of the mixture density.     

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

A process optimization of the growth of silicon carbide (SiC) epilayers on 4° off-axis 4H-SiC substrates is reported. Process parameters such as growth temperature, C/Si ratio and temperature ramp-up conditions are optimized for the standard non-chlorinated growth in order to grow smooth epilayers without step bunching and triangular defects. The growth of 6-μm-thick n-type-doped epitaxial layers on 75-mm-diameter wafers is demonstrated as well as that of 20-μm-thick layer. The optimized process was then transferred to a chloride-based process and a growth rate of 28 μm/h was achieved without morphology degradation. A low growth temperature and a low C/Si ratio are the key parameters to reduce both the step bunching and the formation of triangular defects.     

Mesomorphic Properties of the 4-(4-n-Alkoxybenzoyloxy)-Benzylidene-4-n-Alkoxyanilines and 4-(4-n-Alkoxybenzoyloxy)-3-Methoxy-Benzylidene-4-n-Alkoxyanilines

Transition temperatures, transition enthalpies and X-ray results are reported for 4-(4-n-heptyloxybenzoyloxy)-benzylidene-4-n-alkoxyanilines, 4-(4-n-nonoxybenzoyloxy)-benzylidene-4-n-alkoxyanilines and their 3-methoxy-benzylidene substituted derivatives.     

CdLa2(WO4)4晶体的生长及发光性能的研究

以高温固相法成功合成了CdLa2(WO4)4多晶料,采用垂直坩埚下降法进行了晶体的生长.CdLa2(WO4)4晶体属于四方晶系白钨矿结构,其晶胞参数为:a=b=5.209 ?,c=11.325 ?,晶胞的体积为307.26 ?3,其密度为7. 494 g/cm3.在室温下测量了晶体的光致发光光谱、X射线激发发射光谱、光致发射衰减时间等.结果表明:在296 nm紫外光的激发下,样品在350~600 nm范围内具有宽阔的蓝绿发光带,发射峰的峰值为470 nm.并且其光致发射衰减时间为3.4 ns,在X射线激发下也有良好的发光性能.