X-ray double crystal topographic measurements of distorted crystals

A procedure to measure local variations in lattice distortions based on the shrink and enlarge effect of contours, observed on topographs taken by X-ray double crystal reflection technique has been proposed and applied in the study of CdTe crystals. A domination of the orientational component of distortions has been established, reaching to hundreds of arcsec for points at a distance of 1 cm. The variation in spacings Δd/d does not exceed hundredths of a per cent.     

Channeling‐enhanced EDX for polarity resolved crystal orientation determination

Using channeling‐enhanced energy‐dispersive X‐ray spectroscopy (EDX), we demonstrate polarity sensitive orientation determination of a non‐centrosymmetric crystal in the scanning electron microscope. The authors observe a characteristic asymmetry in the channeling‐enhanced, angle‐dependent EDX data of a GaAs sample, which is in good agreement to simulations using the dynamical theory of diffraction for the incident electron beam. This allows us to assign the orientation of the GaAs crystal according to the non‐centrosymmetric point group. The method shown here overcomes the limitation of a reduced point‐group sensitivity of electron backscatter diffraction patterns and electron channeling patterns for crystalline phases that contain atoms of approximately equal electron scattering cross sections.     

Effect of ultrasound on the growth of semiconductor single crystals

Crystallography Reports - The influence of ultrasound on striations in InSb, GaAs, and Bi-Sb single crystals grown by the modified Czochralski method was studied. Ultrasonic waves with a frequency...     

X-ray double crystal diffractometer for testing of plane analyser crystals of LiF

A double crystal diffractometer (DCD) for testing LiF crystals is presented. It is possible to distinguish in a relatively short measuring time (nearly 10 minutes including change of sample and adjustment) between crystals with block desorientation angles >1′ and ≦ 1′ (1′ = 0.291 · 10⁻³ rad). The extention of area registered during a measurement depends on the kind of section of crystal and the kind of reflection; at the examination of {100}-cleavage faces of LiF an elliptical area of a height of 15 mm and a length of 115 mm is registered.     

X-ray determination of the polarity of zincblende-structure crystals

An X-ray diffraction procedure for the determination of the polarity of noncentrosymmetric crystals by measuring the integrated reflections of opposite polarity on one surface of the crystal is described. The observed intensities must be corrected for the different asymmetries of the two reflections. To estimate the influence of crystal perfection on the correction factor, the ratios of the integrated reflections were calculated numerically for dynamic diffraction. The method has been applied for determining the polarity of CdTe.     

Hybrid technique for growing homogeneous single crystals of semiconductor solid solutions from melt

A concept and fundamentals of a hybrid technique for growing homogeneous single crystals of semiconductor solid solutions (SSs) from melt are presented. The growth consists of two stages. In the first stage, a single crystal with a specified concentration of the more refractory component is grown by an innovative method of directional constitutional supercooling of a melt in the steady-state mode. In the second stage, the melt is fed with the second component. Using an example of the classical Ge-Si system, the concentration profiles of the components along the crystal axis are calculated and the SS growth dynamics ensuring single crystallinity over the entire ingot length is determined. An analysis of the results yields the optimal technological parameters and conditions for growing homogeneous single crystals of SSs of a specified composition and size.     

X-ray investigations of BaLaGa3O7 single crystals

X-ray investigations have been carried out on single crystals of BaLaGa₃O₇. Debye temperature as well as thermal expansion coefficients were determined, and values of which are respectively     

X-ray and Raman studies of single crystals of CsSbF6

Crystals of CsSbF₆ belong to the rhombohedral space groupR¯3-C _3i ² witha=7.904(1)andc=8.261(1) Å,V=446.95 ų,Z=3,D _c=4.11 gcm^–3. The antimony atom is surrounded by six fluorine atoms in a nearly perfect octahedral configuration with Sb-F 1.875(9) Å, while 12 fluorine atoms surround the cesium atom with closest contact 3.116 Å. Polarized Raman spectra of single crystals of CsSbF₆ have been obtained, and it is shown that these results can be interpreted in terms of a unimolecular rhombohedral structure. The small distortion from an octahedral arrangement for the SbF ₆ ^– group is clearly reflected in the spectra. The Raman results are in better agreement with the space groupR¯3m-D _3d ⁵ than withR¯3-C _3i ² , but this conclusion must be regarded with caution since the two features in the vibrational spectra of CsSbF₆ which can be used to distinguish between the two structures are weak and ill-defined.     

Zinc oxide single crystals: Influence of temperature and orientation of crystals on their mechanical properties

Zinc oxide single crystals are grown hydrothermally and their microhardness is measured on different {hkil} faces in the temperature range from liquid nitrogen temperature to 900°C. The coefficient K_1C of fracture roughness and the surface energy γ of fracture are estimated. The (0001) plane of a positive monohedron is characterized by the maximum hardness and plasticity over the whole temperature range studied. The shape of indenter prints and dislocation rosettes on the planes of monohedra, hexagonal prisms, and the pyramid are studied. The indenter print on the basal plane has an isotropic shape, whereas on the planes of prisms and the pyramid the prints indicate the first-kind anisotropy of mechanical properties. The first-kind anisotropy coefficient k equal to H_max/H_min increases with an increase in the temperature for the \(\{ 10\bar 10\} , \{ 11\bar 20\} \), and \(\{ 10\bar 11\} \) planes. For the \(\{ 10\bar 10\} \) plane, the coefficient k varies from ～1.4 at room temperature to ～2 at 900°C.     

Morphology and orientation relations of BaCl2 precipitates in NaCl single crystals

In the present paper morphology and orientation relations of BaCl₂ precipitates in NaCl single crystals are described. It is shown that BaCl₂ precipitates of large dimensions are formed at the dislocations of a/2〈110〉{100}, the dislocation lines of which are oriented in the directions 〈210〉.     

X-ray,optical and electrical study of melt-grown CdI2 single crystals

CdI₂ has been purified using the zone-refining technique by giving 20 passes. Single crystals grown from the starting material showed arcing in the X-ray oscillation photographs whereas it is absent in the crystals grown from the zone refined material. These crystals are found to be of the 4 H type. DC conductivity studies were made on these crystals at various stages of purification. The surface morphology of these crystals have been studied using an optical microscope.     

Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likely due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.     

A method for automated determination of the crystal structures from X-ray powder diffraction data

An algorithm is proposed for determining the crystal structure of compounds. In the framework of this algorithm, X-ray powder diffraction patterns are compared using a new similarity index. Unlike the indices traditionally employed in X-ray powder diffraction analysis, the new similarity index can be applied even in the case of overlapping peaks and large differences in unit cell parameters. The capabilities of the proposed procedure are demonstrated by solving the crystal structures of a number of organic pigments (PY111, PR181, Me-PR170).     

Growth of semiconductor silicon crystals

This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.     

Structural study of thiosaccharin by single crystal X-ray diffraction and infrared spectroscopy

The structure of thiosaccharin (1,2-benzisothiazol-3(2H)-thione 1,1-dioxide) has been investigated by X-ray diffraction and infrared spectroscopic methods. The compound crystallizes in the orthorhombic space groupFdd2 witha=26.591(3),b=25.058(3),c=4.934(5) Å,Z=16. The structure consists of thiosaccharin molecules bonded to each other through N–H...O intermolecular hydrogen bonds. The infrared spectra of the thiosaccharin at room and liquid-nitrogen temperature were recorded. The spectral features in the N–H stretching region were correlated with the crystallographic data on the geometry of the N–H...O hydrogen bonding. In an attempt to assign the bands due to the SO₂ stretching modes, the spectrum of thiosaccharin was compared with that of saccharin (1,2-benzoisothiazole-3(2H)-one, 1,1-dioxide).     

Growth of single crystals of semiconductor solid solutions by double feeding of the melt method

Crystallography Reports - The problem of component distribution in solid solution crystals grown from a melt fed by rods made of the components of the system, with allowance for the dependence of...     

X-ray investigations of friction stressed α-Fe single crystals

A translation of a α-Fe single crystal on a glass plate causes elastic and plastic deformations in regions near the surface. The dislocation density caused by the deformations and its dependence on the friction way were determined from Rocking curves. After having reached a certain friction way the monocrystalline surface layer changes into a polycrystalline layer. At the same time a friction texture develops within the polycrystalline layer.     

The X-ray method for the determination of damaged layer thickness of the Si crystal surface

In this paper the X-ray section topograph method was used for determination of damaged layer thickness of silicon crystal surface. For measurements such reflections should be chosen for which the “margine” effect is very sharp. It was used the fact that in the ranges of strong perturbances the approximation of kinematic theory could be applied.