白宝石衬底上生长的MgxZn1-xO晶体薄膜的结构和光学性能

在白宝石 (sapphire)衬底上低温外延生长出了MgxZn1 -xO晶体薄膜 .x射线衍射 (XRD)及能量色散x射线 (EDX)分析表明 ,MgxZn1 -xO薄膜的晶体结构依赖于薄膜中Mg的组分x,随着Mg组分的增大 ,MgxZn1 -xO薄膜的结构从与ZnO晶体一致的六方结构转变为与MgO晶体一致的立方结构 .对MgxZn1 -xO薄膜的紫外透射光谱及紫外光致荧光谱 (UVPL)的分析表明 ,随着Mg组分的增大 ,光学吸收边产生明显的蓝移 ,表明MgxZn1 -xO晶体薄膜的带隙增大 ,且带隙连续可调 .吸收光谱和XRD测量显示 ,带隙高达 5 6 5eV的MgxZn1 -xO晶体薄膜与MgO之间的晶格失配仅为0 16 % .     

射频磁控溅射法生长MgxZn1-xO薄膜的结构和光学特性

用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x≤0.30)薄膜.x射线衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构,没有形成任何显著的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现锐利的吸收边,由透射谱估算出MgxZn1-xO薄膜的带隙宽度由3.32eV(x=0)线性地增加到3.96eV(x=0.30).     

退火温度对低温生长MgxZn1-xO薄膜光学性质的影响

用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0.16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(FWHM)减小.结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量MgxZn1-xO薄膜.     

利用P-MBE制备高质量MgxZn1-xO的结构和光学特性

利用等离子体辅助分子束外延(P-MBE)的方法,在c平面的蓝宝石衬底上制备了高质量的MgxZn1-xO合金薄膜。通过改变Mg源的温度,得到了不同Mg组份的MgxZn1-xO合金薄膜;通过引入ZnO的低温缓冲层,有效地提高了MgxZn1-xO合金薄膜的结晶质量。随着Mg组份的增加,MgxZn1-xO的X射线衍射的(002)衍射峰逐渐向大角度方向移动。对样品进行光致发光(PL)谱的测量,在室温下观察到了较强的紫外发光。随Mg浓度的增加,紫外发光峰向高能侧移动,并且发光峰逐渐展宽。通过对x=0.15的样品进行变温光谱的测量研究了紫外发光峰起因,得到了MgxZn1-xO的发光是来自于自由激子的发光。自由激子束缚能为54meV。     

MgxZn1-xO/Au/MgxZn1-xO夹层透明导电薄膜的制备及光电性质研究

采用操作简单的溶胶-凝胶法和射频磁控溅射法在石英衬底上分别制备了MgxZn1-xO薄膜和MgxZn1-xO/Au/MgxZn1-xO夹层结构的透明导电薄膜并对样品进行退火处理。利用紫外-可见分光光度计、X射线衍射仪、光致发光、霍尔效应测试对在不同退火温度下薄膜的晶体结构、光学和电学性质进行表征分析,并研究退火温度对其影响。测试结果表明:所制备的薄膜样品均具有良好的c轴(c-axis)取向并呈现出六角纤锌矿结构。Mg组分的增加使得ZnO基薄膜的光学带隙逐渐增大,PL发光谱和吸收光谱的谱线出现了明显的蓝移现象,但薄膜的电学特性有所降低。而在MgxZn1-xO/Au/MgxZn1-xO夹层结构的薄膜样品中,Au夹层的存在使薄膜的光学性质变差,在紫外区域透光率约为60%。但薄膜的电学性质得到明显改善,相比MgxZn1-xO薄膜,其电阻率和迁移率显著提高。此外通过高温退火处理可以有效提高所制备薄膜的晶体质量,进一步提高样品电学特性,其中经过500℃退火后的薄膜迁移率达到了40.9cm2·Vs-1,电阻率为0.005 7Ω·cm。但随着退火温度的进一步升高,薄膜晶体尺寸从25.1nm增大到32.4nm,从而降低了该薄膜的迁移率。因此该夹层结构的MgxZn1-xO/Au/MgxZn1-xO薄膜对于促进ZnO基透明导电薄膜在深紫外光学器件中的应用有重要作用。     

高温高压下Mg_xZn_(1-x)O固溶体的制备

研究了高温高压下制备MgxZn1-xO(0.30x0.60)固溶体的过程.在1000—2000℃和4—5.6GPa的条件下,制备出稳定的单一立方相MgxZn1-xO(x=0.4,0.5,0.6)固溶体,解决了常压下MgxZn1-xO的分相问题.通过X射线衍射仪和扫描电子显微镜等测试手段,对MgxZn1-xO样品进行了表征,阐明了立方相MgxZn1-xO的形成机制,给出了高压下MgxZn1-xO固溶体的温度与组分相图.     

MgxZn1-xO单晶薄膜的结构和光学性质

用等离子辅助分子束外延(P-MBE)的方法,在蓝宝石c平面上外延生长了MgxZn1-xO合金薄膜。在0≤x≤0．2范围内薄膜保持着ZnO的纤锌矿结构不变。X射线双晶衍射谱的结果表明生长的样品是单晶薄膜。据布喇格衍射公式计算得到,随着Mg含量的增加,薄膜的品格常数C由0．5205nm减小到0．5185nm。室温光致发光谱出现很强的紫外近带发射(NBE)峰,没有观察到深能级(DL)发射,且随着Mg的掺入量的增加,紫外发射峰有明显的蓝移。透射光谱的结果表明,合金薄膜的吸收边随着Mg离子的掺入逐渐向高能侧移动,这与室温下光致发光的结果是相吻合的,并计算出随着x值增加,带隙宽度从3．338eV逐渐展宽到3．682eV。通过研究Mg0.12Zn0.88O样品的变温光谱,将紫外发射归结为束缚在施主能级上的束缚激子发射。并详细地研究了在整个温度变化过程中,束缚激子的两个不同的猝灭过程以及谱线的半峰全宽与温度变化的关系。     

电子束蒸发结合热处理方法制备高质量MgxZn1-xO薄膜

利用电子束蒸发结合热处理方法在150℃下,石英衬底上生长了纤锌矿结构的MgxZn1-xO薄膜。用X射线衍射(XRD),扫描电镜(SEM),吸收光谱和室温光致发光(PL)光谱研究了退火条件和降温方式对MgxZn1-xO薄膜的微结构和光学性质的影响。在吸收光谱中,吸收边和吸收峰的蓝移说明:通过改变退火条件和降温方式,可以将MgxZn1-xO薄膜的带隙从3.37eV提高到3.61eV。从SEM的结果得出:吸收边和吸收峰的蓝移不是由量子限制效应引起的,而是形成了MgxZn1-xO合金薄膜。在XRD谱图中,没观察到属于MgO的衍射峰,700℃退火快速降温至室温薄膜的衍射峰的半高全宽(FWHM)较其他薄膜的衍射峰有所展宽,说明Mg2 已经成功地取代了ZnO中的Zn2 。薄膜的室温光致发光谱说明:通过采用快速降温,可制得高质量的MgxZn1-xO薄膜。     

Mg_xZn_(1-x)O粉体的制备及性能表征

MgxZn1-xO材料是一种新型的光电功能材料,近年来受到人们的广泛关注.文章采用Sol-Gel法制备了MgxZn1-xO粉体,研究Mg含量对MgxZn1-xO结构和发光性能的影响,结果表明在x从0到1的整个区间中MgxZn1-xO样品存在六方纤锌矿与面心立方两种结构,当x＜0.2时为六方纤锌矿结构,x＞0.8时为面心立方结构,在两者之间为其混合结构;光谱分析表明不同组分的MgxZn1-xO样品均具有紫外和可见发射特性,紫外发射峰位于370～384 nm,可见发射峰位于468 nm附近;粉体的平均粒径在100 nm左右.     

梯度组分缓冲层诱导的单一立方相Mg_(0.3)Zn_(0.7)O薄膜外延生长

为了实现MgZnO合金带隙全跨度调制,利用低压MOCVD设备,在c面蓝宝石衬底上采用MgO籽晶层和组分渐变缓冲层控制立方相MgxZn1-xO薄膜的生长,获得了Zn组分达到0.7的单一立方相MgxZn1-xO薄膜,把MgZnO合金带隙调制范围从MgO一侧扩展到了4.45 eV,覆盖了整个日盲紫外波段。对比实验分析表明,这种高Zn组分立方相MgZnO薄膜的生长得益于缓冲层晶格模板的结构诱导作用和适宜的生长温度(350~400℃)。Mg0.3Zn0.7O基MSM结构紫外探测器响应峰位于270 nm,截止波长295 nm。     

Elastic scattering of He from Be,B, B,Mg, Mg,Mg and Al

Elastic scattering angular distributions of ³He particles from ⁹Be, ¹⁰B, ¹¹B, ²⁴Mg, ²⁵Mg, ²⁶Mg and ²⁷A1 at E(³He) ≈ 13 to 27 MeV have been measured and some of the representative results are reported. In most cases the angular range of the measured cross sections was from 8° to 150° (lab). The results have been analyzed in terms of a six-parameter optical model and are compared with previous work.     

Transient field measurements of g-factors for 24Mg AND 26Mg

The g-factors of the first-excited J^π = 2⁺ states of ²⁴Mg and ²⁶Mg have been measured with the ion-implantation perturbed angular correlation technique (IMPAC). The precession of the spins of nuclei recoiling into a magnetized iron backing is predominantly caused by the transient magnetic field for these very light and short-lived (τ_m ≈ 1 ps) nuclei. The transient field, which attains a value of 200 T for the Mg isotopes, is present only during the slowing-down of the recoiling nucleus and results in average precession angles of about 1.5 mrad. The experimental results are treated in the framework of the transient field theory of Lindhard and Winther. This yields g-factors of g = +0.42b ± 0.09 and g = +1.3 ± 0.3 for ²⁴Mg and ²⁶Mg, respectively. The results are compared with theoretical predictions and for ²⁴Mg also with a recent time-differential deorientation experiment.     

Statistical analysis of24Mg+24Mg elastic and inelastic scattering

The data on the excitation functions of²⁴Mg+²⁴Mg elastic and inelastic (²⁴Mg +²⁴Mg^*(2⁺),²⁴Mg^*(2⁺)+²⁴Mg^*(2⁺),²⁴Mg+²⁴Mg^*(4⁺),²⁴Mg^*(4⁺)+²⁴Mg^*(2⁺),²⁴Mg+²⁴Mg^*(6⁺)) scattering fromE _c.m=42 to 56 MeV have been subjected to a statistical analysis consisting of calculations of deviation function, cross-correlation function, cross-channel correlation coefficients, coherence widths, and the distribution of cross sections. On the basis of the analysis resonant structures atE _c.m=45.70, 46.65, 47.35 and 47.75 MeV have been confirmed. Two new resonant structures atE _c.m=44.55 and 50.50 MeV have been identified.     

Spin alignment in the resonant 24Mg+24Mg system

The spin alignment P_zz in large-angle ²⁴Mg+²⁴Mg inelastic scattering, 1α-transfer, and 2α-transfer at the resonance energy E_CM=45.7 MeV is deduced from the out-of-plane anisotropy of the particle-coincident γ radiation. Except for low-lying single excitations, rather large values around P_zz=0.8 are found for all prominent states, in accordance with the expected spin distribution for a fissioning strongly deformed intermediate complex.     

Magnetic moment of23Mg

The magnetic moment of the²³Mg (I =3/2⁺, T_1/2=11.3 s), has been determined as |(²³Mg)|=0.5364±0.003 µ_N by use of -NMR detection with the recoil polarization obtained through a low energy nuclear reaction.     

The structure of25Mg

Gamma-decay modes and spin(-parity) assignments of levels in²⁵Mg have been systematically investigated up to 10 MeV excitation energy by particle-γ-ray angularcorrelation measurements with the²⁴Mg(d, pγ) reaction at 6.5 MeV bombarding energy and with the²²Ne(α,nγ) reaction at 11.8, 12.5, 14.4 and 15.5 MeV bombarding energy. A level scheme has been established which is comprehensive up to 8.3 MeV excitation energy forI≦9/2 and up to 10 MeV for 9/2O d _5/2 — 1s _1/2-O d _3/2 shell and the unifieds-d shell Hamiltonian. The agreement is good to excellent. The first intruder states are located near 6.8 MeV excitation energy. The collective properties of²⁵Mg beyond the well established rotational bands are investigated using both the new experimental information and theB(E2)'s obtained from the shell model. The spectrum of²⁵Mg is completely rotational for the first five to six MeV above the yrast line. Shell modelB (M 1)'s reflect the Nilsson model structure of²⁵Mg in great detail. The prospectiveI ^π=9/2^?, 13/2^?, and 15/2^? members of the established negative-parity,K=1/2 band are found in levels atE _x=7801, 9410, and 8896 keV.     

The mass of 22Mg

Mass measurements with a relative precision of better than 1.5 x 10(-8) were performed on 22Mg and its reaction partners 21Na and 22Na with the ISOLTRAP Penning trap mass spectrometer at CERN, yielding the mass excesses D(22Mg)=-399.92(27) keV, D(21Na)=-2184.71(21) keV, and D(22Na)=-5181.56(16) keV. The importance of these results is twofold. First, a comparative half-life (Ft value) has been obtained for the superallowed beta decay of 22Mg to further test the conserved-vector-current hypothesis. Second, the resonance energy for the 21Na proton capture reaction has been independently determined, allowing direct comparisons of observable gamma radiation in nova explosions with the yield expected from models.     

Control Al/Mg intermetallic compound formation during ultrasonic-assisted soldering Mg to Al

To prevent the formation of Al/Mg intermetallic compounds (IMCs) of Al₃Mg₂ and Al₁₂Mg₁₇, dissimilar Al/Mg were ultrasonic-assisted soldered using Sn-based filler metals. A new IMC of Mg₂Sn formed in the soldered joints during this process and it was prone to crack at large thickness. The thickness of Mg₂Sn was reduced to 22 μm at 285 °C when using Sn-3Cu as the filler metal. Cracks were still observed inside the blocky Mg₂Sn. The thickness of Mg₂Sn was significantly reduced when using Sn-9Zn as the filler metal. A 17 μm Mg₂Sn layer without crack was obtained at a temperature of 200 °C, ultrasonic power of Mode I, and ultrasonic time of 2 s. The shear strengths of the joints using Sn-9Zn was much higher than those using Sn-3Cu because of the thinner Mg₂Sn layer in the former joints. Sn whiskers were prevented by using Sn-9Zn. A cavitation model during ultrasonic assisted soldering was proposed.     

Mg1+xB2中过量Mg对其超导电性的影响

利用固相反应法制备了非化学计量的二元金属硼化物超导体Mg1+xB2(x=0,0.1,0.2).粉末X光衍射(XRD)表明较多的过量Mg极易导致绝缘的MgB6和MgO杂相,Mg与MgB2不易形成固溶体.当杂相较少时,对样品电阻率和交流磁化率研究发现其超导临界温度Tc几乎不受杂相的影响,但正常态电阻率随Mg过量增加而迅速增大,同时抗磁屏蔽信号下降.对交流磁化率的实部、虚部与Mg含量等关系作了讨论.我们的结果说明过量Mg导致的杂质对晶界区的Josephson耦合有破坏作用.