8-羟基喹啉镧两亲性配合物LB膜的双层电致发光器件

以具有不同层数的两亲配合物二[2-(N-十六烷基氨基甲酰基)-8-羟基喹啉]合镧[La(HQ)₂Cl]的LB膜为发光层,PBD为电子传输层,制备了双层结构的电致发光(EL)器件:ITO/LB膜/PBD/Al.器件产生黄绿色注入式发光.LB膜的层数和沉积压对器件的性能具有重要影响.在16V激发电压下,5,11和21层LB膜双层EL器件的电流密度分别为48,29和16.4mA/cm²,启亮电压阀值为7.5,8.5和9.5V.器件的亮度随电流密度和驱动电压的增加而增加.在相同偏压下,21层LB膜EL器件的亮度大于5和11层LB膜的器件.在25mN/m沉积的LB膜制备的EL器件具有较高的亮度(1219cd/m₂)和击穿电压.     

2-十八烷基-7,7,8,8-四氰基对醌二甲烷和3,3′,5,5′-四甲基联苯胺电荷转移配合物LB膜的制备和表征

利用LB技术制备了2-十八烷基-7,7,8,8-四氰基对醌二甲烷(C18TCNQ)和3,3,′5,5′-四甲基联苯胺(TMB)的电荷转移配合物(CT comp lex)薄膜,即TMB.C18TCNQ LB膜.利用红外(IR)光谱、紫外-可见-近红外(UV-V is-NIR)光谱以及原子力显微镜(AFM)研究了TMB.C18TCNQ在LB膜中的分子取向、结构及表面形貌.结果表明,配合物为混合堆积类型,LB膜中电子给体TMB和电子受体C18TCNQ的环面分别垂直于固体基板表面,而且给体和受体以面对面的方式堆积.5层TMB.C18TCNQ LB膜的AFM照片显示,其表面形貌是由许多堆积在一起的六边形片状微晶组成的,微晶的宽度约为180 nm.与通过LB技术和掺杂技术制备的TMB.C18TCNQ掺杂膜比较,TMB.C18TCNQ LB膜具有明显不同的结构,其长的脂肪烃链有向垂直于基板表面方向变化的趋势,LB膜与掺杂膜的表面形貌也有明显不同.这表明不同的制备方法可以影响薄膜的结构和形貌.     

新的碲络合物的合成、性质与电子结构的研究

应用有机-水混合溶剂共热沉淀法,合成了一种新的白色固体细粉末Te2(OH)8(H2O)2Cl2,即[Te(OH)4(H2O)Cl]2双碲络合物,并用多种物理化学方法,对其组成和性质进行了测定.考察了温度、溶剂、反应时间等因素对其生成量及稳定性的影响,结果表明该络合物是很稳定的,具有许多有意义的性质.结合实验,在B3LYP/CEP-4G水平上对其几何构型进行了优化,得到了最佳稳定形态的电子结构,最低总能量为-5 553246×105kJ·mol-1,每个中心原子Te净电荷为1 998958e,表明是电子"授体",反馈给四个"受体"配位体HO上的O原子,分别为-0 221138e,-0 209388e,-0 221098e和-0 250985e,也表明该络合物是稳定的.比较合理地说明了实验结果.     

八-4-(四氢糠氧基)酞菁铕(HI)的双酞菁衍生物LB膜特性

合成了八-4-(四氢糠氧基)酞菁铕(Ⅲ)(A)、八-4-(正壬氧基)酞菁铽(Ⅲ)(B)、双酞菁铽(C)和八-4-硝基酞菁铽(D),通过元素分析、红外光谱、质谱和紫外-可见光谱加以确认.测定了配合物A的π-A曲线,表明有很好的成膜性,Z型沉积形成的石英LB膜具有很强的荧光响应,随着LB膜厚度增加,荧光强度增加.掺杂邻菲咯啉的混合LB膜荧光强度比纯膜强,但不是邻菲咯啉加入的量越多发光性越强.研究结果表明nA:nphen=1:10时有最好的荧光行为.同时研究了A和LB膜对于NH3,NOx(x=1,2)和Cl2的气敏性.当A和LB膜分别在NH3和NOx(x=1,2)为5×10-5时,未观察到响应.而Cl2气中,在2×10-6的情况下,迅速产生了响应.在低体积分数条件下(2×10-6～8×10-5),电导率随着Cl2体积分数的改变而呈直线变化.     

聚马来酸偶氮萘己单酯LB膜对n—Si（100）的光敏化作用

合成了聚马来酸{6-[4-(1-偶氮)-萘氧]己基}单酯功能化合物,并在不同基底(CaF_2,n-Si(100))上沉积其LB膜,利用UV-Vis和IR光谱对膜性质和结构进行了表征.对膜修饰表面的硅片表面光电压谱测试发现,它对单晶硅具有很强的敏化作用.对界面电子过程也进行了初步讨论.     

八-4-(四氢糠氧基)酞菁铕(Ⅲ)的双酞菁衍生物LB膜特性

合成了八 - 4 - (四氢糠氧基 )酞菁铕 (Ⅲ ) (A)、八 - 4 - (正壬氧基 )酞菁铽 (Ⅲ ) (B)、双酞菁铽 (C)和八 - 4 -硝基酞菁铽 (D) ,通过元素分析、红外光谱、质谱和紫外 -可见光谱加以确认 .测定了配合物A的π—A曲线 ,表明有很好的成膜性 ,Z型沉积形成的石英LB膜具有很强的荧光响应 ,随着LB膜厚度增加 ,荧光强度增加 .掺杂邻菲咯啉的混合LB膜荧光强度比纯膜强 ,但不是邻菲咯啉加入的量越多发光性越强 .研究结果表明nA∶nphen=1∶10时有最好的荧光行为 .同时研究了A和LB膜对于NH3 ,NOx(x =1,2 )和Cl2 的气敏性 .当A和LB膜分别在NH3 和NOx(x =1,2 )为 5× 10 -5时 ,未观察到响应 .而Cl2 气中 ,在 2× 10 -6的情况下 ,迅速产生了响应 .在低体积分数条件下 (2× 10 -6～ 8×10 -5) ,电导率随着Cl2 体积分数的改变而呈直线变化     

含不同链长的三个卟啉LB膜修饰电极的光电响应研究

利用LB (Langmuir-Blodgett)技术将含不同链长的卟啉化合物(C4Py, C6Py和C8Py)单层膜转移到ITO (indium-tin oxide)导电玻璃上, 发现其具有良好的光电转换性质. 卟啉化合物修饰后的紫外吸收光谱与光电流工作谱重叠, 表明卟啉化合物起到了敏化光电流产生的效果; 而且电子给体、电子受体和偏压对其敏化效果的实验结果表明: 光诱导电子转移是产生光电响应的主要原因. 而且, 这三个卟啉化合物的光电响应性质与碳链长度相关, 其中含有六个碳链的C6Py表现出最佳的光电转化效果.     

八—4—（四氢糖氧基）酞菁铕（Ⅲ）的双酞菁衍生物LB膜特性

合成了八-4-(四氢糠氧基)酞菁铕(Ⅲ)(A)、八-4-(正壬氧基)酞菁铽(Ⅲ)(B)、双酞菁铽(C)和八-4-硝基酞菁铽(D),通过元素分析、红外光谱、质谱和紫外-可见光谱加以确认.测定了配合物A的π-A曲线,表明有很好的成膜性,Z型沉积形成的石英LB膜具有很强的荧光响应,随着LB膜厚度增加,荧光强度增加.掺杂邻菲咯啉的混合LB膜荧光强度比纯膜强,但不是邻菲咯啉加入的量越多发光性越强.研究结果表明nA:nphen=1:10时有最好的荧光行为.同时研究了A和LB膜对于NH3,NOx(x=1,2)和Cl2的气敏性.当A和LB膜分别在NH3和NOx(x=1,2)为5×10-5时,未观察到响应.而Cl2气中,在2×10-6的情况下,迅速产生了响应.在低体积分数条件下(2×10-6～8×10-5),电导率随着Cl2体积分数的改变而呈直线变化.     

非两亲性四硫代富瓦烯导电LB膜的研究

近年来，利用LB技术制备电活性的有机超薄膜受到广泛的关注．导电LB膜的膜材料主要是含有受体化合物7，7’，8，8’-四氰基二亚甲基苯醌（TCNQ）的电荷转移复合物[1~3]以及给体分子[4，5]，特别是四硫代富瓦烯（TTF）衍生物[6~8]．尽管LB膜多由带长链的两亲性分子组装而成，但是对非两亲性TTF衍生物LB膜的研究[9~11]结果表明，引入长链烷基并非制备TTF类电荷转移复合物LB膜的先决条件．该结果极大地拓展了LB膜材料的研究范围．本文报道非两亲性TTF衍生物与花生酸混合导电LB膜的制备、结构表征与导电性能研究．1实验部分利用亚磷…     

受体强度及D/A比对D-A型共轭聚合物几何结构和电子性质的影响研究

以Thieno[3,2-b]thiophene(TT)为电子供体(D),Benzo[c][1,2,5]thiadiazole(BT)、[1,2,5]thiadiazolo[3,4-g]quinoxaline(Td Q)、和Benzobis[1,2,5]thiadiazole(BBT)为电子受体(A),设计了供体-受体摩尔比(D/A比)分别为1∶1和2∶1的6种供体-受体交替排列的D-A型共轭聚合物.采用杂化的密度泛函方法(B3LYP),在6-31G(d)理论水平下研究了其几何结构和电子性质.研究发现,电子受体接受电子的能力和D/A比对基于TT的D-A型共轭聚合物的几何结构和电子性质有重要影响.对于D/A比相同的聚合物,电子受体接受电子的能力增强,聚合链上桥键的键长缩短,供体环上的碳碳双键的平均键长(L_(AD))增大而碳碳单键平均键长(L_(AS))减小.对由相同电子供体和受体构成的聚合物,D/A比增加,桥键变长.电子受体对D/A比为2∶1的聚合物的性质影响有显明的规律.当电子受体接受电子的能力增强,聚合物的能隙(Eg)变窄、价带(W_(VB))和导带(W_(CB))变宽、载流子有效质量(m_H和m_L)减小.研究发现,p-TdQ-TT和p-BBT-DTT能隙窄,能带相对较宽、载流子有效质量小,可能是的潜在的本征导电聚合物材料.     

Unique {H(SiR(3))(2)}, (H(2)SiR(3)), H(HSiR(3)), and (H(2))SiR(3) ligand sets supported by the {Fe(Cp)(L)} platform (L=CO, PR(3))

This work deals with the type and incidence of nonclassical Si--H and H--H interactions in a family of silylhydride complexes [Fe(Cp)(OC)(SiMe(n)Cl(3-n))H(X)] (X=SiMe(n)Cl(3-n), H, Me, n=0-3) and [Fe(Cp)(Me(3)P)(SiMe(n)Cl(3-n))(2)H] (n=0-3). DFT calculations complemented by atom-in-molecule analysis and calculations of NMR hydrogen-silicon coupling constants revealed a surprising diversity of nonclassical Si--H and H--H interligand interactions. The compounds [Fe(Cp)(L)(SiMe(n)Cl(3-n))(2)H] (L=CO, PMe(3); n=0-3) exhibit an unusual distortion from the ideal piano-stool geometry in that the silyl ligands are strongly shifted toward the hydride and there is a strong trend towards flattening of the {FeSi(2)H} fragment. Such a distortion leads to short Si--H contacts (range 2.030-2.075 A) and large Mayer bond orders. A novel feature of these extended Si--H interactions is that they are rather insensitive towards the substitution at the silicon atom and the orientation of the silyl ligand relatively the Fe--H bond. NMR spectroscopy and bonding features of the related complexes [Fe(Cp)(OC)(SiMe(n)Cl(3-n))H(Me)] (n=0-3) allow for their rationalization as usual eta(2)-Si--H silane sigma-complexes. The series of "dihydride" complexes [Fe(Cp)(OC)(SiMe(n)Cl(3-n))H(2)] (n=0-3) is different from the previous two families in that the type of interligand interactions strongly depends on the substitution on silicon. They can be classified either as usual dihydrogen complexes, for example, [Fe(Cp)(OC)(SiMe(2)Cl)(eta(2)-H(2))], or as compounds with nonclassical H--Si interactions, for example, [Fe(Cp)(OC)(H)(2)(SiMe(3))] (16). These nonclassical interligand interactions are characterized by increased negative J(H,Si) (e.g. -27.5 Hz) and increased J(H,H) (e.g. 67.7 Hz).     

Syntheses and structures of the infinite chain compounds Cs(4)Ti(3)Se(13), Rb(4)Ti(3)S(14), Cs(4)Ti(3)S(14), Rb(4)Hf(3)S(14), Rb(4)Zr(3)Se(14), Cs(4)Zr(3)Se(14), and Cs(4)Hf(3)Se(14)

The alkali metal/group 4 metal/polychalcogenides Cs(4)Ti(3)Se(13), Rb(4)Ti(3)S(14), Cs(4)Ti(3)S(14), Rb(4)Hf(3)S(14), Rb(4)Zr(3)Se(14), Cs(4)Zr(3)Se(14), and Cs(4)Hf(3)Se(14) have been synthesized by means of the reactive flux method at 823 or 873 K. Cs(4)Ti(3)Se(13) crystallizes in a new structure type in space group C(2)(2)-P2(1) with eight formula units in a monoclinic cell at T = 153 K of dimensions a = 10.2524(6) A, b = 32.468(2) A, c = 14.6747(8) A, beta = 100.008(1) degrees. Cs(4)Ti(3)Se(13) is composed of four independent one-dimensional [Ti(3)Se(13)(4-)] chains separated by Cs(+) cations. These chains adopt hexagonal closest packing along the [100] direction. The [Ti(3)Se(13)(4-)] chains are built from the face- and edge-sharing of pentagonal pyramids and pentagonal bipyramids. Formal oxidation states cannot be assigned in Cs(4)Ti(3)Se(13). The compounds Rb(4)Ti(3)S(14), Cs(4)Ti(3)S(14), Rb(4)Hf(3)S(14), Rb(4)Zr(3)Se(14), Cs(4)Zr(3)Se(14), and Cs(4)Hf(3)Se(14) crystallize in the K(4)Ti(3)S(14) structure type with four formula units in space group C(2)(h)()(6)-C2/c of the monoclinic system at T = 153 K in cells of dimensions a = 21.085(1) A, b = 8.1169(5) A, c = 13.1992(8) A, beta = 112.835(1) degrees for Rb(4)Ti(3)S(14);a = 21.329(3) A, b = 8.415(1) A, c = 13.678(2) A, beta = 113.801(2) degrees for Cs(4)Ti(3)S(14); a = 21.643(2) A, b = 8.1848(8) A, c = 13.331(1) A, beta = 111.762(2) degrees for Rb(4)Hf(3)S(14); a = 22.605(7) A, b = 8.552(3) A, c = 13.880(4) A, beta = 110.919(9) degrees for Rb(4)Zr(3)Se(14); a = 22.826(5) A, b = 8.841(2) A, c = 14.278(3) A, beta = 111.456(4) degrees for Cs(4)Zr(3)Se(14); and a = 22.758(5) A, b = 8.844(2) A, c = 14.276(3) A, beta = 111.88(3) degrees for Cs(4)Hf(3)Se(14). These A(4)M(3)Q(14) compounds (A = alkali metal; M = group 4 metal; Q = chalcogen) contain hexagonally closest-packed [M(3)Q(14)(4-)] chains that run in the [101] direction and are separated by A(+) cations. Each [M(3)Q(14)(4-)] chain is built from a [M(3)Q(14)] unit that consists of two MQ(7) pentagonal bipyramids or one distorted MQ(8) bicapped octahedron bonded together by edge- or face-sharing. Each [M(3)Q(14)] unit contains six Q(2)(2-) dimers, with Q-Q distances in the normal single-bond range 2.0616(9)-2.095(2) A for S-S and 2.367(1)-2.391(2) A for Se-Se. The A(4)M(3)Q(14) compounds can be formulated as (A(+))(4)(M(4+))(3)(Q(2)(2-))(6)(Q(2-))(2).     

Organic acid solutions in the chromatography of inorganic ions VIII. Cation-exchange of Mn(II), Cd(II), Co(II), Ni(II), Zn(II), Cu(II), Fe(III), Sc(III), Y(III), Eu(III), Dy(III), Ho(III), Yb(III), Ti(IV) and Nb(V) in malate media

Summary The cation-exchange behaviour of Mn(II), Cd(II), Co(II), Ni(II), Zn(II), Cu(II), Fe(III), Sc(III), Y(III), Eu(III), Dy(III), Ho(III), Yb(III), Ti(IV) and Nb(V) in malate media at various concentrations and pH, was studied with Dowex 50 WX8 resin (200–400 mesh) in the ammonium form. Separation of Fe(III)/Cu(II), Fe(III)/Cu(II)/Zn(II), Fe(III)/Co(II)/Mn(II), Cu(II)/Ni(II)/Mn(II), Fe(III)/Cu(II)/Co(II)/Mn(II), Fe(III)/Cu(II)/Ni(II)/Cd(II), Yb(III)/Eu(III), Sc(III)/Y(III),Sc(III)/Yb(III)/Dy(III) and Nb(V)/Yb(III)/Ho(III) has been achieved, among others.This work was supported by C.N.R. of Italy.     

Hexaaquacobalt(II) bis(hypophosphite) and hexaaquacobalt(II)/nickel(II) bis(hypophosphite)

The title compounds, hexa­aqua­cobalt(II) bis­(hypophosphite), [Co(H₂O)₆](H₂­PO₂)₂, and hexa­aqua­cobalt(II)/nickel(II) bis(hypophosphite), [Co_0.5Ni_0.5(H₂O)₆](H₂PO₂)₂, are shown to adopt the same structure as hexa­aqua­magnesium(II) bis­(hypophosphite). The packing of the Co(Ni) and P atoms is the same as in the structure of CaF₂. The Co^II(Ni^II) atoms have a pseudo‐face‐centred cubic cell, with a = b～ 10.3 Å, and the P atoms occupy the tetrahedral cavities. The central metal cation has a slightly distorted octahedral coordination sphere. The geometry of the hypophosphite anion in the structure is very close to ideal, with point symmetry mm2. Each O atom of the hypophosphite anion is hydrogen bonded to three water mol­ecules from different cation complexes, and each H atom of the hypophosphite anion is surrounded by three water mol­ecules from further different cation complexes.     

(K_(0.485)Na_(0.485)Li_(0.03))NbO_3-Pb(Zr_(0.53)Ti_(0.47))O_3陶瓷的介电铁电性能

采用传统电子陶瓷工艺制备新型钙钛矿体系(1-x)(K_(0.485)Na_(0.485)Li_(0.03))NbO_3-Pb(Zr_(0.53)Ti_(0.47))O_3陶瓷,研究了该体系陶瓷的介电铁电性能.X射线衍射分析表明:所有陶瓷样品都具有单一的钙钛矿结构,在0.65≤x≤0.75时,出现明显的正交相和四方相的准同型相界区.测试结果表明:陶瓷具有高介电常数.低介质损耗,良好的温度稳定性;获得了饱和的电滞回线,显示了优良的铁电性能.尤其在x=0.75时各项性能达到最佳,其中介电常数ε_r=1590,介电损耗tan δ=0.017,居里温度T_c=295℃,剩余极化强度P,=28.6 μC·cm~(-1),矫顽场强E_c=0.89 kV·mm~(-1).