Body-centered tetragonal B2N2: a novel sp3 bonding boron nitride polymorph

A novel polymorph of boron nitride (BN) with a body-centered tetragonal structure (bct-BN) has been predicted using first-principles calculations. The structural, vibrational, and mechanical calculations indicated that bct-BN is mechanically stable at zero pressure. When pressure is above 6 GPa, bct-BN becomes energetically more stable than h-BN. The bct-BN appears to be an intermediate phase between h-BN and w-BN due to a low energy barrier from h-BN to w-BN via bct-BN. Our results also indicated that the structure of unknown E-BN phase might be bct-BN.     

Prediction of formation of cubic boron nitride by construction of temperature-pressure phase diagram at the nanoscale

The size-dependent phase diagram of BN was developed on the basis of the nanothermodynamic theory. Our studied results suggest that cubic BN (c-BN) is more stable than hexagonal BN (h-BN) in the deep nanometer scale and the triple point of c-BN, h-BN and liquid shifts toward the lower temperature and pressure with decreasing the crystal size. Moreover, surface stress, which is determined by the experimental conditions, is the main reason to influence the formation of c-BN nuclei. The developed phase diagram of BN could help us to exploit new techniques for the fabrication of c-BN nanomaterials.     

Structure, bonding, vibration and ideal strength of primitive-centered tetragonal boron nitride

First-principle calculations of the structural, electronic, vibrational and mechanical properties of the primitive-centered tetragonal boron nitride (pct-BN) structure are performed. Results reveal that pct-BN is more energetically favorable than h-BN above the pressure of 8.8 GPa and dynamically stable at up to 120 GPa. Electronic bonding indicates that pct-BN possesses a covalent character with near-tetrahedral sp(3)-hybridized electronic states. Vibrational property calculations show that its characteristic sp(3) Raman peaks are at 738 cm(-1), 1032 cm(-1) and 1155 cm(-1). The mechanical failure mode of pct-BN is dominated by the shear type. The lowest peak stress of 43.1 GPa under (110) [11(-)0] shear sets an upper bound for its ideal strength. The calculated minimum hardness of pct-BN is greater than that of w-BN. Its average hardness approached that of c-BN, indicating that this novel BN allotrope is a potential superhard material.     

Fluorinating hexagonal boron nitride into diamond-like nanofilms with tunable band gap and ferromagnetism

Cubic boron nitride (c-BN) possesses a number of extreme properties rivaling or surpassing those of diamond. Especially, owing to the high chemical stability, c-BN is desired for fabricating electronic devices that can stand up to harsh environments. However, realization of c-BN-based functional devices is still a challenging task due largely to the subtlety in the preparation of high-quality c-BN films with uniform thickness and controllable properties. Here, we present a simple synthetic strategy by surface fluorination of few-layered hexagonal boron nitride (h-BN) sheets to produce thermodynamically favorable F-terminated c-BN nanofilms with an embedded N-N bond layer and strong inbuilt electric polarization. Due to these specific features, the fluorinated c-BN nanofilms have controllable band gap by thickness or inbuilt and applied electric fields. Especially, the produced nanofilms can be tuned into substantial ferromagnetism through electron doping within a reasonable level. The electron-doping-induced deformation ratio of the c-BN nanofilms is found to be 1 order of magnitude higher than those of carbon nanotubes and graphene. At sufficient high doping levels, the nanofilm can be cleaved peculiarly along the N-N bond layer into diamond-like BN films. As the proposed synthesis strategy of the fluorinated c-BN nanofilms is well within the reach of current technologies, our results represent an extremely cost-effective approach for producing high-quality c-BN nanofilms with tunable electronic, magnetic, and electromechanical properties for versatile applications.     

Neutron damage of hexagonal boron nitride: h-BN

Hexagonal boron nitride (h-BN) was neutron damaged at an integral flux of 2.40 × 10¹² n cm⁻² s⁻¹ for 1, 2, 3 and 4 h. The h-BN samples undergo a transition from sp² to sp³ hybridization as a consequence of the neutron induced damage with the formation of cubic boron nitride (c-BN) spots, as suggested both by FT–IR and Raman spectroscopy. In addition to c-BN, also a certain degree of amorphization is achieved by h-BN already at the lowest neutron fluence of 8.64 × 10¹⁵ n cm⁻² as clearly evidenced by Raman spectroscopy. The Wigner or stored energy to the radiation-damaged h-BN samples was studied by DSC and also in this case there was a clear evidence that the neutron damage was partly irreversible and insensitive to the thermal annealing up to 630 °C. Electron spin resonance (ESR) was employed to further study the structural defects induced by the neutron bombardment of h-BN. Two kinds of paramagnetic defective structures centered on ¹¹B atoms were identified.

     

First-principles study on the adhesive and electronic property of c-BN(111)/Cu(111) interface

The interface properties of c-BN/Cu composite play an important role in its application. In this work, we employed first-principles calculation to investigate the bonding properties and electronic characteristics of the c-BN(111)/Cu(111) interface. The adhesion properties, partial density of states (PDOS), charge density, and charge density difference of different interfaces were analyzed. The results show that the interface of B-termination “OT” stacking mode is the most stable one. The density of states at the c-BN(111)/Cu(111) interface is similar to that of c-BN bulk phase, indicating that the electronic states of the c-BN layer are not affected by the Cu atoms. The PDOS diagram shows that the 2p orbital of B atoms and the 2p orbital of N atoms are hybridized in the c-BN layer. Besides, 2p orbital of B(N) atoms and 3d orbital of Cu atoms are hybridized in the interface. The covalent bonds and ionic bonds in the interface of N-termination and B-termination OT stacking mode structures are stronger than that of “SL” and “TL” stacking mode. So, the OT stacking mode has larger adhesive energy. Furthermore, Cu and c-BN can form a good coherent interface, which can be used to prepare c-BN/Cu composites and functional materials with excellent mechanical properties.     

Enrichment and desalting of tryptic protein digests and the protein depletion using boron nitride

Sample preparation still remains a great challenge in modern bioanalysis and the interest in new efficient solid phase extraction (SPE) materials still remains high. In this work, hexagonal boron nitride (h-BN) is introduced as a new SPE material for the isolation and enrichment of peptides. The h-BN is isoelectronic and structurally similar to graphite. It has remarkable properties including good thermal conductivity, excellent thermal and chemical stability and a better oxidation resistance than graphite. BN attracts increasing interest because of its wide range of applicability. In the present work, the great potential of h-BN, as a new SPE-material, on the enrichment, preconcentration and desalting of tryptic digest of model proteins is demonstrated. A special attention was dedicated to the efficient enrichment of hydrophilic phosphopeptides. Two elution protocols were developed for the enrichment of peptides compatible for subsequent MALDI-MS and ESI-MS analysis. In addition, the recoveries of 5 peptides and 3 phosphopeptides with wide range of pI values utilizing h-BN materials with different surface areas were investigated. 84–106% recovery rate could be achieved using h-BN materials. The results were compared with those obtained using graphite and silica C18 under the same elution conditions, and lower recoveries were obtained. In addition, h-BN was found to have a capability of protein depletion, which is requisite for the peptide profiling.     

N,N-Dimethyl formamide facilitated formation of hexagonal boron nitride from boric acid

In this paper, we report on a promoting novel process for the formation of h-BN plates by using N,N-dimethyl formamide-treated boric acid (DMF-BA). Using this B source, the formation of h-BN can be indeed improved greatly compared to using pure boric acid (BA). This method effectively reduces the content of boric acid and amorphous boric oxide, enhancing the transformation rate of h-BN. For preparation of pure h-BN, it can obviously lower the resultant temperature without further purification process. Via graphitization index (G.I.) calculation and thermostability analysis, the pure h-BN plates obtained from the DMF-BA would be a promising candidate for raw material of c-BN and low-temperature applications in the air.     

First principles investigation on the ultra‐incompressible and hard TaN

The structural, electronic, and mechanical properties of TaN were investigated by use of the density functional theory (DFT). Eight structures were considered, i.e., hexagonal WC, TaN, NiAs, wurtzite, and CoSn structures, cubic NaCl, zinc‐blende and CsCl structures. The results indicate that TaN in TaN‐type structure is the most stable at ambient conditions among the considered structures. Above 5 GPa, TaN in WC‐type structure becomes energetically the most stable phase. They are also stable both thermodynamically and mechanically. TaN in WC‐type has the largest shear modulus 243 GPa and large bulk modulus 337 GPa among the considered structures. The volume compressibility is slightly larger than diamond, but smaller than c‐BN at pressures from 0 to 100 GPa. The compressibility along the c axis is smaller than the linear compressibility of both diamond and c‐BN. The estimated hardness is 34 GPa. Thus, TaN in WC‐type structure is a potential candidate to be ultra‐incompressible and hard. The unique mechanical properties of TaN in WC‐type structure would make it suitable for applications under extreme conditions. © 2009 Wiley Periodicals, Inc. J Comput Chem, 2009     

3D-Graphene/Boron Nitride-stacking Material: a Fundamental van der Waals Heterostructure

The 3D periodic graphene/h-BN(G/BN) heterostuctures were studied. The stacking forms between the graphene and h-BN layers were discussed. The varieties of the geometric and electronic configurations at the interface between graphene and h-BN layers were also reported. The metal-semiconductor transform of the G/BN material can be achieved by adjusting the stacking form of the h-BN layers or changing the proportion of graphene layers in the unit cell. An electrostatic potential well was found at the interface. Due to the potential well and the only dispersion correlation at the interface, the dielectric constant ε_zz in vertical direction was independent on the variety of the thickness or the proportion of the compositions in an unit cell.     

A simple method to synthesize polyhedral hexagonal boron nitride nanofibers

Hexagonal boron nitride (h-BN) fibers with polyhedral morphology were synthesized with a simple-operational, large-scale and low-cost method. The sample obtained was studied by X-ray photoelectron spectrometer (XPS), electron energy lose spectroscopy (EELS), X-ray powder diffraction (XRD), Fourier transformation infrared spectroscopy (FT-IR), etc., which matched with h-BN. Environment scanning electron microscopy (ESEM) and transmission electron microscope (TEM) indicated that the BN fibers possess polyhedral morphology. The diameter of the BN fibers is mainly in the range of 100–500 nm.     

Origins of thermodynamically stable superhydrophobicity of boron nitride nanotubes coatings

Superhydrophobic surfaces are attractive as self-cleaning protective coatings in harsh environments with extreme temperatures and pH levels. Hexagonal phase boron nitride (h-BN) films are promising protective coatings due to their extraordinary chemical and thermal stability. However, their high surface energy makes them hydrophilic and thus not applicable as water repelling coatings. Our recent discovery on the superhydrophobicity of boron nitride nanotubes (BNNTs) is thus contradicting with the fact that BN materials would not be hydrophobic. To resolve this contradiction, we have investigated BNNT coatings by time-dependent contact angle measurement, thermogravimetry, IR spectroscopy, and electron microscopy. We found that the wettability of BNNTs is determined by the packing density, orientation, length of nanotubes, and the environmental condition. The origins of superhydrophobicity of these BNNT coatings are identified as (1) surface morphology and (2) hydrocarbon adsorbates on BNNTs. Hydrocarbon molecules adsorb spontaneously on the curved surfaces of nanotubes more intensively than on flat surfaces of BN films. This means the surface energy of BNNTs was enhanced by their large curvatures and thus increased the affinity of BNNTs to adsorb airborne molecules, which in turn would reduce the surface energy of BNNTs and make them hydrophobic. Our study revealed that both high-temperature and UV-ozone treatments can remove these adsorbates and lead to restitution of hydrophilic BN surface. However, nanotubes have a unique capability in building a hydrophobic layer of adsorbates after a few hours of exposure to ambient air.     

聚异丙胺基环硼氮烷裂解制备氮化硼及其抗氧化与介电性能

以异丙胺和三氯环硼氮烷(TCB)为原料,在较温和条件下合成了一种可溶可熔的聚异丙胺基环硼氮烷(PTPiAB),后经高温裂解制得六方氮化硼(h-BN).利用元素分析、TGA、FTIR、XRD和网络分析仪等对先驱体及裂解产物的组成、结构和性能进行了表征.结果表明,PTPiAB的结构中含有B3N3六元环,N-H、C-H和C-N键,其熔点约70 oC.1000 oC时在NH3和Ar中的陶瓷产率分别为45.9 %和52.8 %.NH3中裂解失重主要发生在800 oC以下,1000 oC左右开始结晶,1800 oC时得到BN的(002)晶面间距为0.334 nm,密度为2.03 g·cm-3.该BN表现出了较好的高温抗氧化性能,在空气中900 oC以下增重小于0.3%.此外,室温下测试频率为10 GHz时的介电常数实部和损耗角正切分别为2.48和0.03.     

X-ray absorption near edge structure study of BN nanotubes and nanothorns

Two boron nitride (BN) nanostructures, the bamboo-like nanotubes and nanothorns where the nanosize h-BN layers are randomly stacked looking like thorns, were synthesized selectively via thermal chemical vapor deposition of B/B(2)O(3) under the NH(3) flow at 1200 degrees C. Electron energy-loss spectroscopy reveals the N-rich h-BN layers with a ratio of B/N = 0.75-0.85. Angle-resolved X-ray absorption near edge structure of these two N-rich nanostructures has been compared with that of h-BN microcrystals. The pi transition in the N K-edge shifts to the lower energy by 0.8-1.0 eV from that of h-BN microcrystals, and the second-order signals of N 1s electrons become significant. We suggest that the N enrichment would decrease the band gap of nanostructures from that of h-BN microcrystals. The Raman spectrum shows the peak broadening due to the defects of N-rich h-BN layers.     

Simulation of structural, elastic, and electronic properties of new cubic crystals of carbon and BN nanotubes

Models of new cubic crystals from carbon and boron-nitrogen (BN) nanotubes are proposed. Within electronic density functional theory, their structural, elastic, and electronic properties are studied. These isotropic nanotubular crystals are found to have extremely high elastic modules B (～490–650 GPa) and low compressibility β (～0.0020–0.0015 1/GPa) and maintain the conductivity typical of their “building blocks,” i.e. isolated carbon and BN nanotubes.     

Aluminum nitride nanotubes

An AlN nanotube (AlNNT) was theoretically predicted in 2003. In comparison with the carbon nanotubes, the AlNNTs are wide-band-gap nanostructures with high reactivity, high thermal stability and sharp electronic sensitivity toward some chemicals. The B3LYP predicts an HOMO–LUMO gap of 3.74–4.27 eV for zigzag AlNNTs, while the experimental bad gap of bulk AlN is about 6.28 eV. The lowest strain energy of AlNNTs relative to its AlN nanosheet compared to the nanosheets of carbon and BN nanotubes with an equivalent diameter suggests the feasibility of AlNNT synthesis from its nanosheet. Theoretical methods predict a Young’s Modulus of about 453 GPa for AlNNTs that is smaller than that of carbon (1 TPa), BN (870 GPa) and GaN (796 GPa) nanotubes. In 2003, the faceted single-crystalline hexagonal AlNNTs were synthesized and extensively explored by means of density functional theory calculations. Several works have suggested different potential applications for AlNNTs including chemical sensors, hydrogen storage, gas adsorbent, and electron field emitter. This review is a comprehensive study on the latest achievements in the structural analyses, synthesis, and property evaluations based on the computational methods on the AlNNTs in the light of the development of nanotubes.     

Hexagonal boron nitride adsorbent: Synthesis,performance tailoring and applications

Hexagonal boron nitride(h-BN), with unique structural and properties, has shown enormous potentitoward variety of possible applications. By virtue of partially-ionic character of BN chemical bonds anusually large specific surface area, h-BN-related nanostructures exhibit appealing adsorption propertiewhich can be widely applied for separation and purification towards energy and environment treatmenIn this review, recent progress in designing h-BN micro, nano-structure, controlled synthesis, performancoptimizing as well as energy and environment-related adsorption applications are summarized. Strategieto tailor the h-BN can be classified as morphology control, element doping, defect control and surfacmodification, focusing on how to optimize the adsorption performance. In order to insight the intrinsimechanism of tuning strategies for property optimization, the significant adsorption applications of h-Btowards hydrogen storage, CO_2 capture, pollutants removal from water and adsorption desulfurization arpresented.     

Electron microscopic phase analysis of BN-thin films

A series of BN films was deposited by means of r.f. magnetron sputtering of a h-BN target onto Si(1OO) surfaces. Hereby, the substrate bias voltage was varied. Special interest is focussed to the influence of the deposition parameters on the orientation of the growing hexagonal BN film with respect to the substrate. For structural investigation, cross section samples were prepared. In addition to HRTEM and diffraction investigations, especially electron energy loss spectroscopy (EELS) was applied successfully for phase identification. For negative bias voltages of U _B =–300 V and U _B =–350V, we found a phase system consisting of a first-grown 25 nm thick layer of hexagonal structure with the c axis parallel to the substrate surface followed by the cubic phase.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

XPS investigations of thick,oxygen-containing cubic boron nitride coatings

Cubic boron nitride (c-BN) coatings produced by PVD and PECVD techniques usually exhibit very high compressive stresses and poor adhesion due to intense ion bombardments of the growing surface that are mandatory during the formation of the cubic phase. Our previous investigations indicate, however, that a controlled addition of oxygen during film deposition can lead to a drastic reduction of the detrimental stress, yet having minor effect on the cubic phase content in the resulting low-stress, oxygen-containing c-BN:O coatings (as already confirmed by various analytical methods like X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and electron diffraction, and Fourier transform infra-red spectroscopy (FTIR)). This stress-reduction technique makes possible the deposition of well-adhered, superhard c-BN:O layer about 2 μm thick through magnetron sputtering on top of an adhesion-promoting base layer and via a compositional-graded nucleation process. In the present paper, we report on the atomic bonding structure relating in particular to the incorporated oxygen within such a thick c-BN:O coating using X-ray photoelectron spectroscopy (XPS). The c-BN:O top layer was found to consist of about 49.8 at% boron, 42.2 at% nitrogen, 5.5 at% oxygen, as well as small amounts of carbon (1.4 at%) and argon (1.1 at%). Because of the low oxygen concentration, it was difficult to categorize the bonding state of oxygen according to the XPS spectra of B 1s and N 1s elemental lines. However, the detailed results in terms of the O 1s spectrum strongly indicated that the lattice nitrogen of c-BN was partially replaced by the added oxygen.     

An ice phase of lowest thermal conductivity

On pressurizing at temperatures near 130 K, hexagonal and cubic ices transform implosively at 0.8-1 GPa. The phase produced on transformation has the lowest thermal conductivity among the known crystalline ices and its value decreases on increase in temperature. An ice phase of similar thermal conductivity is produced also when high-density amorphous ice kept at 1 GPa transforms on slow heating when the temperature reaches approximately 155 K. These unusual formation conditions, the density and its distinguished thermal conductivity, all indicate that a distinct crystal phase of ice has been produced.