Diode-pumped passively mode-locked Nd:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> laser

We have experimentally demonstrated a diode-pumped passively mode-locked Nd:CaNb₂O₆ laser for the first time to our best knowledge. With a semiconductor saturable absorber mirror (SESAM) as a passive mode locker, the laser generated stable mode-locked pulses with pulse duration of 17.3 ps and repetition rate of 88.4 MHz. With a singe-emitter laser diode pumping, the maximum average output power of the mode-locked laser was 0.843 W, with a slope efficiency of 23%. The experimental results show the Nd:CaNb₂O₆ crystal is a promising laser gain medium for picosecond pulse generation.     

Diode-pumped passively Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with a GaAs saturable absorber

By using a-cut Nd:Lu_0.15Y_0.85VO₄ mixed crystal as laser gain medium, a diode-pumped passively Q-switched and mode-locked (QML) laser with a GaAs saturable absorber in a Z-type folded cavity is demonstrated for the first time. The Q-switched mode-locked laser pulses with about 90% modulation depth are obtained as long as the pump power reached the oscillation threshold. The repetition rate of the passively Q-switched pulse envelope ranges from 50 to 186 kHz as the pump power increases from 0.915 to 6.520 W. Under an incident pump power of 6.52 W, the QML pulses with the largest average output power of 694 mW, the shortest pulse width of 200 ns and the highest pulse energy of 3.73 μJ are obtained. The mode-locked pulse width inside the Q-switched envelope is estimated to be about 275 ps. The experimental results show that Nd:Lu_0.15Y_0.85VO₄ is a promising mixed crystal for QML laser.     

Experimental study on a diode-pumped passively mode-locking Nd:GdVO<Subscript>4</Subscript>/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO₄ laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO₄ laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.     

High power passively mode-locked Nd:YVO<Subscript>4</Subscript> laser using graphene oxide as a saturable absorber

We report on a passively mode-locked Nd:YVO₄ laser using a novel graphene oxide saturable absorber fabricated by vertical evaporation method. An 880 nm LD pump source was used to reduce the thermal load of the laser crystal. At the pump power of 7.4 W, 1.2 W average output power of continuous wave mode-locked laser with optical conversion efficiency of 16.2% was achieved. To the best of our knowledge, this is the highest output power of passively mode-locked solid-state laser using graphene oxide saturable absorber. The repetition rate of passively mode-locked pulse was 88 MHz with the pulse energy of 13.6 nJ.     

Passive mode-locked Nd:YVO<Subscript>4</Subscript> laser using a multi-walled carbon nanotube saturable absorber

We report a passive mode-locked Nd:YVO₄ laser pumped by 880 nm LD using a transmission-type multi-walled carbon nanotube saturable absorber. At the pump power of 6.1 W, the average output power of 0.8 W of continuous wave mode-locked laser with optical conversion efficiency of 13.1% was generated. The repetition rate and pulse energy of the mode-locked pulse were 88 MHz and 9.1 nJ, respectively.     

High efficiency passive mode-locked Nd:YVO<Subscript>4</Subscript> laser based on SESAM under direct pumping at 880 nm

We report on an 880 nm LD pumped passive mode-locked TEM₀₀ Nd:YVO₄ laser based on a semiconductor saturable absorber mirror (SESAM), with a high optical-to-optical conversion efficiency of 67.3%, and a slope efficiency of 71%. When the absorbed pump power was 11 W, 7.4 W average output power of 1064 nm continuous-wave mode-locked laser was achieved. To our knowledge, this is the highest optical-to-optical conversion efficiency among all the published reports of 880 nm LD pumped SESAM passive mode-locked lasers. The repetition rate of mode-locked pulse was 80 MHz with 26 ps pulse width. The maximum pulse energy and peak power were 92.5 nJ and 3.6 kW, respectively.     

Frequency conversion of CO laser radiation in the ZnGeP<Subscript>2</Subscript> nonlinear crystal

The experimental results of the study of CO laser frequency doubling in ZnGeP₂ and GaSe nonlinear crystals of high optical quality are presented. A multifrequency low-pressure Q-switched CO laser and a selective pulsed electroionization mode-locked CO laser with cryogenic cooling were used in the experiments. The highest external factor of radiation conversion into the second harmonic of the pulse-periodic Q-switched CO laser and pulsed mode-locked CO laser was 1% and 3.5%, respectively. Theoretical calculations showed the possibility of obtaining far IR and terahertz radiation using difference frequency generation of CO laser lines in these crystals.     

Cavity-dumped mode-locked Nd:GdVO<Subscript>4</Subscript> laser at low repetition rate

We report a cavity-dumped mode-locked Nd:GdVO₄ laser with semiconductor saturable absorber mirrors at low repetition rate. In this laser system, a single mode-locked laser pulse is generated, amplified and cavity-dumped by means of electro-optic modulator at 1 to 10 Hz repetition rate. The energy of the pulse is about 150 nJ and the pulse duration is determined to be 10 ps.     

880 nm LD pumped passive Q-switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser using a single-walled carbon nanotube saturable absorber

We report a 880 nm LD pumped passive Q-switched and mode-locked Nd:YVO₄ laser using a single-walled carbon nanotube saturable absorber (SWCNT-SA). At the pump power of 7.78 W, the average out-put power of 330 mW of Q-switched and mode-locked laser with optical conversion efficiency of 4.2% was generated. The repetition rate and pulse width of the Q-switched envelope were 33 kHz and 5.6 μs, respectively. The repetition rate and pulse energy of the mode-locked pulse within the Q-switched envelope were 80 MHz and 4.1 nJ, respectively.     

Passively Q-Switched and mode-locked Nd:YVO<Subscript>4</Subscript> laser with sandwich structured wallpaper graphene oxide absorber

We report on a passively Q-switched and mode-locked Nd:YVO₄ laser using a novel low-cost wall-paper graphene oxide absorber. Sandwich structured wallpaper graphene oxide absorber was constructed by a high transmission mirror, a piece of wallpaper graphene oxide absorber and a reflective mirror. The average output power of 310 mW of passively Q-switched and mode-locked laser was successfully achieved. The repetition rate and pulse width of the Q-switched envelope were 213 kHz and 770 ns, respectively. The repetition rate of passively mode-locked pulse within the Q-switched envelope was 81.3 MHz with the pulse energy of 3.8 nJ.     

Fabrication of aligned single wall carbon nanotube absorbers for high power passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the water-soluble single wall carbon nanotubes (SWCNT) onto a hydrophilic quartz substrate. The fast recovery times of the absorber were measured to be 136 and 790 fs. The modulation depth of the absorber was about 2%. Passive mode-locked Nd:GdVO₄ laser using such an absorber was demonstrated. The continuous wave mode-locked pulses with the pulse duration of 12.4 ps and the repetition of 120 MHz were achieved. The maximum average output power of the mode-locked laser is 2.4 W at the pump power of 13 W. Such kind of absorber has potential to be put into practical use for high power solid-state laser mode locking.     

Diode-pumped simultaneously Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/LBO red Laser

A diode-end-pumped simultaneously Q-switched and mode-locked intracavity frequency doubled Nd:GdVO₄/LBO red laser with an acousto-optic Q-switch was realized. The maximum red laser output power of 250 mW was obtained at the incident pump power of 8.3 W and the repetition rate of 10 kHz. At 5 kHz, the maximum mode-locking modulation depth of about 80% was achieved with the Q-switched pulse width of 440 ns. The red mode-locked pulse inside the Q-switched pulse had a repetition rate of 115 MHz, its average pulse width was estimated to be about 350 ps.     

Diode-pumped passively mode-locked Nd:GdVO<Subscript>4</Subscript> laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO₄ laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO₄ laser using a GaAs wafer as the saturable absorber. PACS 42.55.Rz; 42.60.Fc; 42.55.Xi.     

Analysis of a laser-diode end-pumped intracavity frequency-doubled passively Q-switched and mode-locked Nd:GdVO<Subscript>4</Subscript>/KTP laser with a semiconductor saturable absorber

A diode-pumped passively Q-switched mode-locked (QML) intracavity frequency-doubled Nd:GdVO₄/KTP green laser with a semiconductor saturable absorber is presented. Nearly 100% modulation depth for the mode-locked green pulses can be achieved at any pump power over 1.92 W. The width of the mode-locked green pulse was estimated to be about 150 ps. The mode-locked pulse interval within the Q-switched envelope of 320 ns and the repetition rate of 97.5 kHz were obtained, at an incident pump power of 4.4 W. The repetition rate of the mode-locked green pulses inside the Q-switched envelope was 140 MHz.     

Experimental study on doubly QML Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser with AO modulator and central SESAM

By using double-mixed crystal Nd:Lu_0.15Y_0.85VO₄ as laser medium, a diode-pumped doubly Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and central semiconductor saturable absorption mirror (SESAM) is realized for the first time. The Q-switched envelope modulation depth is nearly 100%.The average output power and the pulse width of the Q-switched envelope etc. for different AO modulator repetition rates have been measured. The experimental result show that Nd:Lu_0.15Y_0.85VO₄ crystal is an excellent laser medium for doubly QML lasers.     

Passively Q-switched mode-locking in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser with V:YAG

A passively Q-switched and mode-locked Nd:LuVO₄ laser with V:YAG at 1.34 μm was successfully demonstrated. Comparisons between c-cut and a-cut Nd:LuVO₄ lasers were experimentally made. The maximum average output power of 170 mW, the highest Q-switched pulse energy of 4.5 μJ were obtained in c-cut Nd:LuVO₄ laser. The duration of mode-locked pulse was estimated to be less than 540 ps with repetition rate of 110 MHz.     

Characteristics of diode-pumped dual-loss-modulated Q-switched and mode-locked Nd:Lu<Subscript>0.15</Subscript>Y<Subscript>0.85</Subscript>VO<Subscript>4</Subscript> laser

A diode-pumped dual-loss-modulated Q-switched and mode-locked (QML) Nd:Lu_0.15Y_0.85VO₄ laser with acousto-optic (AO) modulator and Cr⁴⁺:YAG saturable absorber is presented. The stable QML laser pulse with high peak power and complete modulation depth has been obtained. The QML laser characteristics such as the pulse width, single-pulse energy etc. have been measured for different small-signal transmissions (T ₀) of Cr⁴⁺:YAG, different reflectivity (R) of output coupler and modulation frequencies of the AO modulator (f _p ). The results show that the pulse energy increases with decreasing f _p and increasing T ₀, while the pulse width decreases with decreasing f _p and increasing T ₀. At f _p = 10 kHz, R = 90%, and T ₀ = 91%, the highest pulse energy and peak power of mode-locked pulses is obtained.     

Non-critical phase-matched second harmonic generation in Gd<Subscript>x</Subscript>Y<Subscript>1-x</Subscript>COB

We have characterized non-critical phase-matching (NCPM) for both Type I and Type II second harmonic generation (SHG) in y-cut Gd_xY_1-xCOB using a nanosecond optical parametric oscillator (OPO). The variation of the NCPM wavelength with temperature was investigated for different values of the compositional parameter x. Efficient SHG of 1064 nm was achieved by choosing the suitable compositional parameter x=0.28 and by tuning the temperature of the crystal to 52 °C. Using a 25-mm-long Gd_0.28Y_0.72COB crystal, conversion efficiencies of 41 and 43% were obtained respectively from a mode-locked Nd:YAG and a Q-switched Nd:YAG laser. PACS 42.25.Lc; 42.65.Ky; 42.70.Mp; 42.79.Nv     

Stable Q-switch mode-locking of Nd:YVO<Subscript>4</Subscript> lasers with a semiconductor saturable absorber

This paper reports on a passively mode-locked and Q-switched Nd:YVO₄ laser generating picosecond pulses with an average output power exceeding 7 W. In a first step Q-switch mode-locking was obtained by self Q-switching of a mode-locked oscillator with appropriate cavity design, pump power and output coupling. In a second system the Q-switching was actively controlled and stabilized by modulating the resonator internal losses with an acousto-optic modulator. In the Q-switch mode-locking operation the laser provided 12.8 ps long mode-locked pulses with a repetition rate of 80 MHz. The repetition rate of the Q-switch envelope was 185 kHz. The maximum pulse energy of a single ps pulse was 0.55 μJ which is 5.5 times the pulse energy measured for cw mode locking. The total energy of the pulses within the Q-switch envelope was 42 μJ. PACS  42.55.Xi; 42.60.Fc; 42.60.Gd     

High power ultrafast Nd:YVO<Subscript>4</Subscript> laser mode locked by single wall carbon nanotube absorber

We use a single walled carbon nanotubes (SWCNTs) absorber to demonstrate a high power mode locking for Nd:YVO₄ lasers. Under the pump power of 12 W, continuous wave mode-locked (CWML) pulse were generated with the maximum average output power of 3.6 W and the pulse duration of 7.6 ps. The peak power and the single pulse energy of the mode-locked laser were up to 4.9 kW and 37.5 nJ, respectively. To our knowledge, this is the highest average output power of the CWML laser with the SWCNTs absorber reported.