Red organic light-emitting devices with dotted-line doped emitting layers

High efficiency red organic light-emitting devices (OLEDs) with several dotted-line doped layers (DLDLs) were fabricated by using an ultra-high vacuum organic molecular-beam deposition system. The red OLEDs consisted of indium-tin-oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4, 4′-diamine (α-NPD): 40 nm/tris(8-hydroxyquinoline)aluminum (Alq₃)+4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljuloldyl-9-enyl)-4H-pyran (DCJTB); 3%wt.: x nm/(Alq₃+DCJTB; 3%wt./ Alq₃)_n−1: (30−x) nm/ Alq₃: 30 nm/Mg:Ag with n of 2, 4, 6, or 8, and x=30/(2n−1). The luminance yield of the device with 8 DLDLs was 75% higher than that of the device with a common doped layer. This was attributed to more formation of the excitons formed in a wider region resulting from the existence of the DLDLs. The dominant mechanisms of the dopant emission for the devices with DLDLs were described on the basis of the sequential carrier trapping process.     

Effect of laser-etched indium tin oxide on optoelectrical properties of organic light-emitting diodes

This study investigated how laser and wet etching methods of ITO substrates affect the optoelectrical properties of OLEDs. Experimental results indicated that the OLED with a laser-etched ITO substrate has a lower driving voltage than that with a wet-etched ITO substrate. According to scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurements, the ITO etching methods yielded different surface morphologies of ITO pattern edges. The lower luminance of the OLED with a laser-etched ITO substrate is attributable to the fringe at the edge of ITO pattern, which causes a high local electric field resulting in the recrystallization of organic materials.     

Solution-processed white organic light-emitting devices based on small-molecule materials

We investigated solution-processed films of 4,4′-bis(2,2-diphenylvinyl)-1,1′-bibenyl (DPVBi) and its blends with N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) by atomic force microscopy (AFM). The AFM result shows that the solution-processed films are pin-free and their morphology is smooth enough to be used in OLEDs. We have developed a solution-processed white organic light-emitting device (WOLEDs) based on small-molecules, in which the light-emitting layer (EML) was formed by spin-coating the solution of small-molecules on top of the solution-processed hole-transporting layer. This WOLEDs, in which the EML consists of co-host (DPVBi and TPD), the blue dopant (4,4′-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and the yellow dye (5,6,11,12-tetraphenylnaphtacene), has a current efficiency of 6.0 cd/A at a practical luminance of 1000 cd/m², a maximum luminance of 22500 cd/m², and its color coordinates are quite stable. Our research shows a possible approach to achieve efficient and low-cost small-molecule-based WOLEDs, which avoids the complexities of the co-evaporation process of multiple dopants and host materials in vacuum depositions.     

NaCl/Ca/Al as an efficient cathode in organic light-emitting devices

An efficient cathode NaCl/Ca/Al used to improve the performance of organic light-emitting devices (OLEDs) was reported. Standard N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4,4′-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq₃) devices with NaCl/Ca/Al cathode showed dramatically enhanced electroluminescent (EL) efficiency. A power efficiency of 4.6 lm/W was obtained for OLEDs with 2 nm of NaCl and 10 nm of Ca, which is much higher than 2.0 lm/W, 3.1 lm/W, 2.1 lm/W and 3.6 lm/W in devices using, respectively, the LiF (1 nm)/Al, LiF (1 nm)/Ca (10 nm)/Al, Ca (10 nm)/Al and NaCl (2 nm)/Al cathodes. The investigation of the electron injection in electron-only devices indicates that the utilization of the NaCl/Ca/Al cathode substantially enhances the electron injection current, which in case of OLEDs leads to the improvement of the brightness and efficiency.     

Work function of sol-gel indium tin oxide (ITO) films on glass

Indium tin oxide (ITO) films (physical thickness, 250-560 ± 25 nm) were deposited on soda lime silica (SLS) glass and silica layer coated (∼200 nm physical thickness) SLS glass substrates by sol-gel technique using alcohol based precursors containing different In:Sn atomic percentages, namely, 90:10, 70:30, 50:50, 30:70. Cubic phase of In₂O₃ was observed up to 50 at.% Sn while cassiterite SnO₂ phase was observed for 70 at.% Sn. Work function of the films was evaluated from inelastic secondary electron cutoff of ultraviolet photoelectron spectroscopy (UPS) energy distribution curve (EDC) obtained under two experimental conditions (i) as-introduced (ii) after the cleaning of the surface by sputtering. Elemental distribution and the presence of oxygen containing contaminant and carbon contaminant of the samples were done by XPS analysis under same conditions. The work function changed little due to the presence of surface contaminants. It was in the range, 3.9-4.2 eV (±0.1 eV).     

Improved performance and stability by an Al/Ni bilayer cathode in organic light-emitting diodes

Al/Ni bilayer cathode was used to improve the electroluminescent (EL) efficiency and stability in N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4,4′-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq₃)-based organic light-emitting diodes. The device with LiF/Al/Ni cathode achieved a maximum power efficiency of 2.8 lm/W at current density of 1.2 mA/cm², which is 1.4 times the efficiency of device with the state-of-the-art LiF/Al cathode. Importantly, the device stability was significantly enhanced due to the utilization of LiF/Al/Ni cathode. The lifetime at 30% decay in luminance for LiF/Al/Ni cathode was extrapolated to 400 h at an initial luminance of 100 cd/m², which is 10 times better than the LiF/Al cathode.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

Effect of spontaneous and piezoelectric polarization on optical characteristics of ultraviolet AlGaInN light-emitting diodes

Polarization is a crucial issue for electrical and optical characteristics of the UV AlGaInN light-emitting diodes. The effect of spontaneous and piezoelectric polarization on optical characteristics of the UV AlGaInN light-emitting diodes is investigated numerically. The simulation results indicate that the polarization-related effect for the UV AlGaInN light-emitting diodes is dominated by the piezoelectric polarization. When the UV AlGaInN light-emitting diodes are without piezoelectric polarization, the optical performance is enhanced effectively due to improved overlap of electron and hole wavefunctions, reduced electron leakage current, and increased density of holes in the active region.     

A light-emitting diode fabricated from horse-heart cytochrome c

We have fabricated a light-emitting diode from horse-heart cytochrome c and measured the electro-luminescence (EL) spectra. The spectra exhibit broad peaks around 530 and 690 nm, and a weak shoulder around 410 nm. The EL spectra are completely different from the photo-luminescence spectra previously reported. The appearance of the 690 nm emission band suggests the charge-transfer between the iron and the axial methionine ligand plays a crucial role in the electrical conduction in the cytochrome c film.     

Thickness dependence of structural, electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates

Without intentionally heating the substrates, indium tin oxide (ITO) thin films of thicknesses from 72 nm to 447 nm were prepared on polyethylene terephthalate (PET) substrates by DC reactively magnetron sputtering with pre-deposition substrate surfaces plasma cleaning. The dependence of structural, electrical, and optical properties on the films thickness were systematically investigated. It was found that the crystal grain size increases, while the transmittance, the resistivity, and the sheet resistance decreases as the film thickness was increasing. The thickest film (∼447 nm) was found of the lowest sheet resistance 12.6 Ω/square, and its average optical transmittance (400-800 nm) and the 550 nm transmittance was 85.2% and 90.4%, respectively. The results indicate clearly that dependence of the structural, electrical, and optical properties of the films on the film thickness reflected the improvement of the film crystallinity with the film thickness.     

Combinatorial fabrication and screening of organic light-emitting device arrays

The combinatorial fabrication and screening of 2-dimensional (2-d) small molecular UV-violet organic light-emitting device (OLED) arrays, 1-d blue-to-red arrays, 1-d intense white OLED libraries, 1-d arrays to study Förster energy transfer in guest-host OLEDs, and 2-d arrays to study exciplex emission from OLEDs is described. The results demonstrate the power of combinatorial approaches for screening OLED materials and configurations, and for studying their basic properties.     

The influence of substrate temperature variation on tungsten oxide thin film growth in an HFCVD system

Tungsten oxide (WO₃) thin films were deposited by a modified hot filament chemical vapor deposition (HFCVD) technique using Si (1 0 0) substrates. The substrate temperature was varied from room temperature to 430 °C at an interval of 100 °C. The influence of the substrate temperature on the structural and optical properties of the WO₃ films was studied. X-ray diffraction and Raman spectra show that as substrate temperature increases the film tends to crystallize from the amorphous state and the surface roughness decreases sharply after 230 °C as confirmed from AFM image analysis. Also from the X-ray analysis it is evident that the substrate orientation plays a key role in growth. There is a sharp peak for samples on Si substrate due to texturing. The film thickness also decreases as substrate temperature increases. UV-vis spectra show that as substrate temperature increases the film property changes from metallic to insulating behavior due to changing stoichiometry, which was confirmed by XPS analysis.     

A simplified reactive thermal evaporation method for indium tin oxide electrodes

Indium tin oxide (ITO) films approximately 120 nm thick were deposited onto unheated glass substrates by using reactive thermal evaporation (RTE) and in situ post-evaporation annealing in oxygen. We show that this simplified method can be used to produce high quality ITO thin films with low electrical resistivity (10⁻³ Ω cm) and high transmittance (approximately 80% at 550 nm). The refractive index is approximately 2.0 and the direct optical band gap of the films (above 3.0 eV) is in good agreement with previously reported values. Since this deposition method does not require heating the substrates or furnace annealing at high temperatures, it can be advantageous when it is necessary to decrease the thermal budget on underlying devices or layers.     

Surface modifications of ITO electrodes for polymer light-emitting devices

Surface modifications were performed on the indium tin oxide (ITO) substrates for polymer light-emitting devices, using the different treatment methods including solvent cleaning, hydrochloric acid treatment and oxygen plasma. The influence of modifications on the surface properties of ITO electrodes were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle, and four-point probe. The surface energies of the ITO substrates were also calculated from the measured contact angles. Experimental results demonstrate that the surface properties of the ITO substrates strongly depend on the modification methods, and oxygen plasma more effectively improves the ITO surface properties compared with the other treatments. Furthermore, the polymer light-emitting electrochemical cells (LECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized. It is observed that the surface modifications on ITO electrodes have a certain degree of influence upon the injection current, luminance and efficiency, but hardly upon the turn-on voltages of current injection and light emission which are close to the measured energy gap of electroluminescent polymer. Oxygen plasma treatment on the ITO electrode yields the better performance of the LECs, due to the improvement of interface formation and electrical contact of the ITO electrode with the polymer blend in the LECs.     

Supramolecular motif and macroscopic pattern in alpha-methylferrocenemethanol films cast from organic solution

The macroscopic patterns were formed in alpha-methylferrocenemethanol films cast from organic solutions. The macroscopic pattern was composed of concentric rings in the solid film. The concentric rings consist of convex ridges and concave valleys; the ordered phase constitutes the convex ridges, while the concave valleys barely contain anything. It has been found that, as for the solvent which can form hydrogen bonding with the solute and has suitable evaporation rate, macroscopic pattern could be observed in the solid film; while as for the solvent that cannot form hydrogen bonding with the solute, no macroscopic pattern would appear. It was suggested that, intermolecular hydrogen bonding and aromatic π stacking interactions of the solute is responsible for the formation of the microscopic crystalline structure; while the hydrogen bonding between the solute and the solvent, and the solvent-evaporation-induced crystallization process, as well as the solvent-evaporation-induced convections are responsible for the formation of the macroscopic pattern. The results could offer a facile way to the electronic material films with well-defined spatial alignment.     

Angular-dependent photoemission studies of indium tin oxide surfaces

Indium tin oxide (ITO) surfaces were treated by solvent cleaning, by plasma of oxygen, argon, nitrogen and by argon ion (Ar⁺) sputtering. Angular-dependent X-ray photoelectron spectroscopy (ADXPS) and ultraviolet photoelectron spectroscopy (UPS) were used to determine the chemical composition, the chemical states and the work function after each treatment. It was found that oxygen plasma and nitrogen plasma chemically reacted with the ITO surfaces. Yet little etching of the surface can be observed after plasma treatments. Among all treatments, oxygen-plasma-treated ITO achieved the highest work function of 4.40 eV, whereas Ar⁺-sputtered ITO surface had the lowest work function of 3.90 eV. The stoichiometry of the ITO surface is shown to be the major controlling factor of the ITO work function. Received: 7 February 2000 / Accepted: 28 March 2000 / Published online: 13 September 2000     

Efficiency improvement and spectral shift of an organic light-emitting device with a square-based microlens array

In this paper, we present and analyze the influences of the fill factor and the height ratio of square-based microlens arrays on the optical characteristics of an organic light-emitting device (OLED). These properties include spectral shift, CIE coordinates, viewing-angle dependence, luminous current efficiency and luminous power efficiency. Both the luminous current efficiency and luminous power efficiency of the OLED were found to increase linearly with increasing the fill factor of microlenses. It is also found that the full width at half maximum (FWHM) of the OLED spectra and CIE coordinate decreased linearly with increasing the fill factor of the microlenses. Besides, the efficiency improvement of the OLED increased with the height ratio of attached microlenses. Compared to the OLED, the luminous current efficiency and luminous power efficiency of the device can be enhanced by 42% and 47%, respectively, by attaching the microlens array having a fill factor of 90% and a height ratio of 0.57. We also observed blue shifts at different viewing angles when microlens arrays were attached to the OLED, which is the evidence that the waveguiding modes are being extracted. In our planar OLED, the peak wavelength blue shifted and the FWHM decreased with increasing the viewing angles due to the microcavity effect.     

The insert of zinc oxide thin film in indium tin oxide anode for organic electroluminescence devices

Zinc oxide films were prepared by rf magnetron sputtering on glass substrates with designed ZnO target using high-purity of zinc oxide (99.99%) powder. Systematic study on dependence of target-to-substrate distance (D_ts) on structural, electrical and optical properties of the as-grown ZnO films was mainly investigated in this work. XRD showed that highly preferred ZnO crystal in the [0 0 1] direction was grown in parallel to the substrate, while the D_ts did not effect to the peak position of XRD. With decreasing D_ts, the growth rate is increased while the electrical resistivity as well as crystal size in the ZnO films was decreased. The XPS data showed that the O/Zn ratio in ZnO films was increased with increasing D_ts in the films. The as-grown ZnO films have an average transmittance of above 85% at the visible region. The optical band gap of the as-grown ZnO films was changed from 3.18 to 3.36 eV with D_ts. With decreasing D_ts, the electrical resistivity was decreased, while the growth rate was increased.A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consists of an ultrathin ZnO layer adjacent to a hole-transporting layer and an Indium tin oxide (ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as a cathode, Al₂O₃ as an electro transport layer, Alq₃ as a luminously layer, TPD as a hole transport layer and ZnO (1 nm)/ITO (150 nm) as an anode. The result of this experiment was not good compared with the case of using ITO, nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 cd/m²) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.     

Investigation of an efficient YbF3/Al cathode for tris-(8-hydroxyquinoline)aluminum-based small molecular organic light-emitting diodes

Efficient tris-(8-hydroxyquinoline)aluminum (Alq₃)-based organic light-emitting diodes (OLEDs) using YbF₃ as the electron injection layer have been investigated. With an YbF₃ (3.0 nm)/Al cathode, the device with Alq₃ as the emitting layer achieved a better performance than the control device with a LiF (0.5 nm)/Al cathode. The release of the low-work-function metal Yb is responsible for the performance enhancement. From the analysis by atomic force spectroscopy and X-ray photoemission spectroscopy, it is observed that the Alq₃-cathode interface could be well covered by YbF₃ at an optimum thickness of 3.0 nm, which helps to prevent the contact between Alq₃ and Al, and to reduce the destruction of Alq₃ by Al.     

Improvement of the outcoupling efficiency of an organic light-emitting device by attaching microstructured films

In this paper, we present and analyse the optical characteristics, such as spectral shift, CIE coordinates, viewing angle dependence, luminous current efficiency and luminous power efficiency, of an organic light-emitting device (OLED) with a commercial diffuser film or a brightness-enhancement film (BEF) attached. Compared to a planar green OLED, the luminous current efficiencies of the OLED with an attached diffuser film or BEF increase by 29% and 23%, respectively. The overall luminous power efficiencies are enhanced by 28% and 7%. Compared to the planar green device, we observe blue shifts at different viewing angles when microstructured films are attached, which is the evidence that the waveguiding modes are being extracted. In our planar OLED, the peak wavelength blue shifts and the full width at the half maximum (FWHM) decrease with increasing viewing angles due to the microcavity effect. When the diffuser is attached, the spectral peak has a constant blue shift (6 nm) compared to that of the planar OLED. On the other hand, in the BEF case, the spectral shift depends on the viewing angle (2-12 nm blue shifts from 0 to 80°). This is due to the different operating principles (scattering and redirected light) of the diffuser and BEF. Since the transmittance spectra of both the diffuser film and the BEF are flat over the visible range, it is suitable for lighting applications by using white OLED. When attaching the films on a commercial white OLED, the luminous current efficiencies of the OLED with an attached diffuser film or BEF increase by 34% and 31%, respectively. The overall luminous power efficiencies are enhanced by 42% and 8%.