Effect of nickel on the initial growth behavior of electroless Ni-Co-P alloy on silicon substrate

In this work the small amounts of NiSO₄ was added to a basic electroless plating bath of CoSO₄ with Na₂H₂PO₂ as reducing agent for the deposition of Co-Ni-P film on a silicon substrate. The initial growth behavior, containing plating rate, chemical composition, crystal structure, surface morphology and micro-structure, of the electroless plating film was characterized by scanning electron microscope (SEM) and transmission electron microscope (TEM). The results showed that the growth morphology variation of the Co-Ni-P films deposited in the basic CoSO₄ + small amounts of NiSO₄ bath is the same as that of Co-P film deposited in the basic CoSO₄ bath, the plating rate of the Co-Ni-P film is much more rapid than that of the Co-P film, the Ni/Co wt.% in the Co-Ni-P film is greatly larger than that in the plating bath, and the structure of as-deposited film is crystalline at first stage and later stage.     

Preparation, characterization and microwave absorption properties of electroless Ni-Co-P-coated SiC powder

Silicon carbide particles reinforced nickel-cobalt-phosphorus matrix composite coatings were prepared by two-step electroless plating process (pre-treatment of sensitizing and subsequent plating) for the application to lightweight microwave absorbers, which were characterized by scanning electron microscopy (SEM), X-ray diffraction analysis (XRD), vibrating sample magnetometer (VSM) and vector network analyzer, respectively. The results show that Ni-Co-P deposits are uniform and mixture crystalline of α-Co and Ni₃P and exhibit low-specific saturation magnetization and low coercivity. Due to the conductive and ferromagnetic behavior of the Ni-Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. The maximum microwave loss of the composite powder less than −32 dB was found at the frequency of 6.30 GHz with a thickness of 2.5 mm when the initial atomic ratio of Ni-Co in the plating bath is 1.5.     

The electrodeposition behaviors and magnetic properties of Ni-Co films

Ni-Co films with different compositions and microstructures were produced on ITO glasses by electrodeposition from sulphate bath at 25 °C. Cyclic voltammograms give a result that the increase in the Co²⁺ concentration displaces Ni-Co alloy oxidation peaks to negative potential with high Co current distributions. It is observed that the content of cobalt in the films increases from 22.42% to 56.09% as the molar ratio of CoSO₄/NiSO₄ varying from 0.015/0.085 to 0.045/0.055 in electrolyte. XRD patterns reveal that the structure of the films strongly depends on the Co content in the deposited films. The saturation magnetization (M_s) moves up from 144.84 kA m⁻¹ to 342.35 kA m⁻¹ and coercivity (H_c) falls from 15.27 kA m⁻¹ to 7.27 kA m⁻¹ with the heat treatment temperature increasing from 25 °C to 450 °C. The saturation magnetization (M_s) and coercivity (H_c) move up from 340.97 kA m⁻¹ and 7.98 kA m⁻¹ to 971.58 kA m⁻¹ and 18.62 kA m⁻¹ with the Co content increasing from 22.42% to 56.09% after annealing at 450.     

Magnetic properties of CoFeP films prepared by electroless deposition

Structure and magnetization of CoFeP films prepared by the electroless deposition were systematically investigated by varying the bath composition and deposition parameters to optimize soft magnetic properties. The cobalt content in the CoFeP films varies from 40.4 to 94.9 wt% by controlling the bath composition. Increase of the metallic ratio FeSO₄·7H₂O/(CoSO₄·7H₂O+FeSO₄·7H₂O) affects the films’ microstructure, which switches from amorphous to crystalline structure. The magnetic properties of CoFeP films reveal that the coercivity (H_c) values range from 80 up to 185 A/m and the saturation magnetization (M_s) from 82 to 580 eum/g depending on the bath composition, deposition parameters and heat-treatment conditions. Increase of M_s and remanent magnetization (M_r) as well as decrease of H_c are observed for the CoFeP films with bath pH, temperature and the metallic molar ratio increasing. It is also found that the H_c is enhanced with the increase of NaH₂PO₂·H₂O concentration. CoFeP films showing good soft magnetic properties with coercivities less than 140 A/m and M_s close to 600 emu/g can be obtained in high pH bath and thereafter heat treatment. The deposit is found to be suitable as soft magnetic materials for core materials.     

The effect of plating on magnetron sputtering: Residual stress and scratch behavior of Au/NiCr/Ta multi-layers

Au/NiCr/Ta multi-layers were deposited on Al₂O₃ substrate by magnetron sputtering and plating. The effect of plating technique on magnetron sputtering film in residual stress, crystal orientation and scratch resistance behavior was investigated. The all magnetron sputtering and plating films were highly textured with dominant Au-(1 1 1) orientation or a mixture of Au-(1 1 1) and Au-(2 0 0) orientation and the (1 1 1)/(2 0 0) intensity ratio were increased after plating. The residual stress in magnetron sputtering films at different substrate temperature was tensile stress with 155-400 MPa and it decreased approximately to 50 MPa after plating. The scratch resistance could be affected by the film thickness, and it increased approximately linearly with the increase of the thickness of metallic films after plating.     

Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH₄ and a mixture of C₂H₂ + H₂, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH₄, the G peak position around 1520 cm⁻¹ and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp³ fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C₂H₂ + H₂, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH₄ increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C₂H₂ + H₂ with increasing bias voltage is observed.     

Nanocrystalline soft ferromagnetic Ni-Co-P thin film on Al alloy by low temperature electroless deposition

Soft ferromagnetic ternary Ni-Co-P films were deposited onto Al 6061 alloy from low temperature Ni-Co-P electroless plating bath. The effect of deposition parameters, such as time and pH, on the plating rate of the deposit were examined. The results showed that the plating rate is a function of pH bath and the highest coating thickness can be obtained at pH value from 8 to10. The surface morphology, phase structure and the magnetic properties of the prepared films have been investigated using scanning electron microscopy (SEM), X-ray diffraction analysis (XRD) and vibrating magnetometer device (VMD), respectively. The deposit obtained at optimum conditions showed compact and smooth with nodular grains structure and exhibited high magnetic moments and low coercivety. Potentiodynamic polarization corrosion tests were used to study the general corrosion behavior of Al alloys, Ni-P and Ni-Co-P coatings in 3.5% NaCl solution. It was found that Ni-Co-P coated alloy demonstrated higher corrosion resistance than Ni-P coating containing same percent of P due to the Co addition. The Ni-Co-P coating with a combination of high corrosion resistance, high hardness and excellent magnetic properties would be expected to enlarge the applications of the aluminum alloys.     

Electroless gold deposition on silicon(100) wafer based on a seed layer of silver

This article describes a method of electroless gold deposition on a Si(100) wafer having a silver surface as seed layer. The seed layer was firstly deposited onto the surface of an etched wafer in an acidic solution of 0.005 mol/L AgNO₃+0.06 mol/LHF. The electroless gold deposition is performed by immersing the Ag-activated wafer in an electroless bath with a composition of 1.27×10^-3 mol/L[AuCl₄]^-+2.00×10^-2 mol/LNaH₂PO₂+8.32×10^-2 mol/L NH₂CH₂CH₂NH₂ (pH = 9.0–9.5). The bath temperature is 50–70 °C. The morphology of the seed layer and the gold film were characterized by atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS).PACS 82.45.Mp; 81.15.Pq; 81.10.Dn     

The influence of H2/(H2 + Ar) ratio on microstructure and optoelectronic properties of microcrystalline silicon films deposited by plasma-enhanced CVD

Hydrogenated microcrystalline silicon films were deposited by glow discharge decomposition of SiH₄ diluted in mixed gas of Ar and H₂. By investigating the dependence of the film crystallinity on the flow rates of Ar and H₂, we showed that the addition of Ar in diluted gas markedly improves the crystallinity due to an enhanced dissociation of SiH₄. The infrared-absorption spectrum reveals that the fraction of SiH bonding increases with increasing the rate ratio of H₂/(H₂ + Ar). The surface roughness of the films increases with increasing the flow rate ratio of H₂/(H₂ + Ar), which is attributed to the decrease of massive bombardment of Ar ions in the plasma. Refractive index and absorption coefficient of the films were obtained by simulating the optical transmission spectra using a modified envelope method. Electrical measurements of the films show that the dark conductivity increases and the activation energy decreases with the ratio of H₂/(H₂ + Ar). A reasonable explanation is presented for the dependence of the microstructure and optoelectronic properties on the flow rate ratio of H₂/(H₂ + Ar).     

The role of oxygen and hydrogen partial pressures on structural and optical properties of ITO films deposited by reactive rf-magnetron sputtering

Sn doped In₂O₃ films are deposited by rf-magnetron sputtering at 300 °C under Ar, Ar + O₂ and Ar + H₂ gas ambients. For the film prepared under argon ambient, electrical resistivity 6.5 × 10⁻⁴ Ω cm and 95% optical transmission in the visible region have been achieved optimizing the power and chamber pressure during the film deposition. X-ray diffraction spectra of the ITO film reveal (2 2 2) and (4 0 0) crystallographic planes of In₂O₃. With the introduction of 1.33% oxygen in argon, (2 2 2) peak of In₂O₃ decreases and resistivity increases for the deposited film. With further increase of oxygen in the sputtering gas mixture crystallinity in the film deteriorates and both the peaks disappeared. On the other hand, when 1.33% hydrogen is mixed with argon, the resistivity of the deposited film decreases to 5.5 × 10⁻⁴ Ω cm and the crystallinity remains almost unchanged. In case of reactive sputtering, the deposition rate is lower compared to that in case of non-reactive sputtering. HRTEM and first Fourier patterns show the highly crystalline structure of the samples deposited under Ar and Ar + H₂ ambients. Crystallinity of the film becomes lower with the introduction of oxygen in argon but refractive index increases from 1.86 to 1.9. The surface morphology of the ITO films have been studied by high resolution scanning electron microscopy.     

Deposition and wettability of silver nanostructures on Si(1 0 0) substrate based on galvanic displacement reactions

A new route for silver electroless deposition on Si(1 0 0) substrate is developed based on the galvanic displacement process. The basic electroless bath contains NaF and AgNO₃ with different concentrations. The morphologies of electrolessly deposited silver nanostructures, including silver nanowires and nanoparticles, are strongly dependent on the electrolyte composition. Adding an excess dosage of polyvinylpyrrolidone into the basic electrolyte yields final silver films of porous structures composed by multitudinous Ag nanoparticles. The porous silver films possess the surface hydrophobic property after the modification with n-dodecanethiol. Unidirectional wetting and spreading of a water droplet are also demonstrated on the patterned porous Ag films.     

Effects of substrate bias and nitrogen flow ratio on the surface morphology and binding state of reactively sputtered ZrNx films before and after annealing

ZrN_x films were sputtered in an Ar + N₂ atmosphere, with different substrate biases (0 to −200 V) at various nitrogen flow ratios (%N₂ = 0.5-24%). The surface morphology, resistivity, crystllinity, and bonding configuration of ZrN_x films, before and after vacuum annealing, were investigated. As compared with ZrN_x films grown without substrate bias, before and after annealing, the resistivity of 1% and 2% N₂ films decreases with increasing substrate biases. Simultaneously, if the applied bias is too high, the crystallinity of ZrN_x film will decrease. The surfaces of 1% and 2% N₂ flow films deposited without bias have small nodules, whereas the surface morphology of films deposited at −100 V of substrate bias exhibits large nodules and rugged surface. Once a −200 V of substrate bias is applied to the substrate, the surface morphology of ZrN_x films, grown at 1% and 2% nitrogen flow ratios, is smooth. Furthermore, there are two deconvoluted peaks in XPS spectra (i.e., Zr-O and Zr-N) of ZrN_x films deposited at −200 V of substrate bias before and after annealing. On the other hand, the surface morphology changes dramatically from rugged surfaces for film deposited at lower nitrogen flow ratio (%N₂ < 1%) to smoother and denser surfaces for film grown at higher nitrogen flow ratio (%N₂ ≥ 1%). The Zr-N bonding in 2% N₂ films still exist after annealing at 700 °C, while the Zr-N bonding in 0.5% and 16% N₂ flow film vanish at the same temperature. The connection between the resistivity, crystallinity, surface morphology, and bonding configuration of ZrN_x films and how they are influenced by the substrate bias and nitrogen flow ratio are discussed in this paper.     

Structural and optical properties of SrCu2O2 films deposited on sapphire substrates by pulsed laser deposition

We deposited SrCu₂O₂ (SCO) films on sapphire (Al₂O₃) (0 0 0 1) substrates by pulsed laser deposition. The crystallographic orientation of the SCO thin film showed clear dependence on the growth temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis showed that the film deposited at 400 °C was mainly oriented in the SCO [2 0 0] direction, whereas when the growth temperature was increased to 600 °C, the SCO film showed a dominant orientation of SCO [1 1 2]. The SCO film deposited at 500 °C was obvious polycrystalline, showing multi peaks from (2 0 0), (1 1 2), and (2 1 1) diffraction in the XRD spectrum. The SCO film deposited at 600 °C showed a band gap energy of 3.3 eV and transparency up to 80% around 500 nm. The photoluminescence (PL) spectra of the SCO films grown at 500 °C and 600 °C mainly showed blue-green emission, which was attributed to the intra-band transition of the isolated Cu⁺ and Cu⁺–Cu⁺ pairs according to the temperature dependent-PL analysis.     

Growth behavior and magnetic property of electroless NiCoFeP films

The electroless NiCoFeP films were deposited on a silicon substrate in a bath containing Ni²⁺, Co²⁺, and Fe²⁺ ions with a concentration ratio of 1:1.9:1.2. These films were characterized by using transmission electron microscope, energy dispersive X-ray spectrometer, and alternating gradient magnetometer for their microstructure, crystal structure, and magnetic properties. The result showed that the film deposited at the initial stage (about 10 s) consists of only one phase with a crystal structure of FCC Ni and a composition about Ni (69 at%), Co (19 at%), Fe (4 at%), and P (7 at%); The film deposited at the latter stage (about 30 s) consists of two phase, one is similar to that of initial stage and the other has crystal structure of HCP Co with a composition about Ni (35 at%), Co (44 at%), Fe (19 at%), and P (2 at%). The saturation magnetization and coercivity of electroless NiCoFeP films vary from 525 to 1546 emu/cm³ [0.68–2.01 T] and from 51.44 to 88.5 Oe [4.09–7.04 kA/m], respectively.     

Electrochemical behaviors of the magnesium alloy substrates in various pretreatment solutions

Interface reactions and film features of AZ91D magnesium alloy in pickling, activation and zinc immersion solutions have been investigated. The surface morphologies of the specimens were observed with scanning electron microscope (SEM). Electrochemical behaviors of AZ91D magnesium alloy in the baths of pickling, activation and zinc immersion were analyzed based on the open circuit potential (OCP) - time curves in various solutions. The results show that the corrosive rate in HNO₃ + CrO₃ or HNO₃ + H₃PO₄ pickling solution was more rapid than in KMnO₄ pickling-activation solution. Both α phase and β phase of the substrates were uniformly corroded in HNO₃ + CrO₃ or HNO₃ + H₃PO₄ pickling solution, the coarse surface can augment the mechanical occlusive force between the subsequent coatings and the substrates, so coatings with good adhesion can be obtained. In HF activation solution, the chromic compound formed via HNO₃ + CrO₃ pickling was removed and a compact MgF₂ film was formed on the substrate surface. In K₄P₂O₇ activation solution, the corrosion products formed via HNO₃ + H₃PO₄ pickling were removed, a new thin film of oxides and hydroxides was formed on the substrate surface. In KMnO₄ pickling-activation solution, a film of manganic oxides and phosphates was adhered on the substrate surface. Zinc film was symmetrically produced via K₄P₂O₇ activation or KMnO₄ pickling-activation, so it was good interlayer for Ni or Cu electroplating. Asymmetrical zinc film was produced because the MgF₂ film obtained in the HF activation solution had strong adhesive attraction and it was not suitable for interlayer for electroplating. However, the substrate containing compact MgF₂ film without zinc immersion was fit for direct electroless Ni-P plating.     

Chemical bath-deposited ZnS thin films: Preparation and characterization

Chemical bath deposition of ZnS thin films from NH₃/SC(NH₂)₂/ZnSO₄ solutions has been studied. The effect of various process parameters on the growth and the film quality are presented. The influence on the growth rate of solution composition and the structural, optical properties of the ZnS thin films deposited by this method have been studied. The XRF analysis confirmed that volume of oxygen of the as-deposited film is very high. The XRD analysis of as-deposited films shows that the films are cubic ZnS structure. The XRD analysis of annealed films shows the annealed films are cubic ZnS and ZnO mixture structure. Those results confirmed that the as-deposited films have amorphous Zn(OH)₂. SEM studies of the ZnS thin films grown on various growth phases show that ZnS film formed in the none-film phase is discontinuous. ZnS film formed in quasi-linear phase shows a compact and a granular structure with the grain size about 100 nm. There are adsorbed particles on films formed in the saturation phase. Transmission measurement shows that an optical transmittance is about 90% when the wavelength over 500 nm. The band gap (E_g) value of the deposited film is about 3.51 eV.     

Characterization of Ti-Zr-N films deposited by cathodic vacuum arc with different substrate bias

Ti-Zr-N (multi-phase) films were prepared by cathodic vacuum arc technique with different substrate bias (0 to −500 V), using Ti and Zr plasma flows in residual N₂ atmosphere. It was found that the microstructure and mechanical properties of the composite films are strongly dependent on the deposition parameters. All the films studied in this paper are composed of ZrN, TiN, and TiZrN ternary phases. The grains change from equiaxial to columnar and exhibit preferred orientation as a function of substrate bias. With the increase of substrate bias the atomic ratio of Ti to Zr elements keeps almost constant, while the N to (Ti + Zr) ratio increases to about 1.1. The composite films present an enhanced nanohardness compared with the binary TiN and ZrN films deposited under the same condition. The film deposited with bias of −300 V possesses the maximum scratch critical load (L_c).     

Influence of the substrate material on the properties of pulsed laser deposited thin Li1+xMn2O4−δ films

Thin Li_1+xMn₂O_4−δ films were deposited on several substrate materials (stainless steel, p-doped silicon and glassy carbon) by pulsed laser deposition. To obtain the correct thin film stoichiometries, targets with a different amount of excess lithium were required (Li_1.03Mn₂O₄ + xLi₂O; x = 2.5 and 7.5 mol%). The resulting polycrystalline thin films were characterized with respect to their morphology and electrochemical activity. It was found that only thin Li_1+xMn₂O_4−δ films deposited on stainless steel and glassy carbon showed the typical insertion and deinsertion peaks of Li⁺ during cycling.     

Effect of the oxygen flow rate on the structure and the properties of Ag-Cu-O sputtered films deposited using a Ag/Cu target with eutectic composition

Ag-Cu-O films were deposited on glass substrates by reactive sputtering of a composite Ag₆₀Cu₄₀ target in various Ar-O₂ mixtures. The films were characterised by energy dispersive X-ray analysis, X-ray diffraction, UV-visible spectroscopy and using the four point probe method. The structure of the films is strongly dependent on the oxygen flow rate introduced in the deposition chamber. The variation of the oxygen flow rate allows the deposition of the following structures: Ag-Cu-(O) solid solution, nc-Ag + nc-Cu₂O, nc-Ag + nc-(Ag,Cu)₂O and finally X-ray amorphous. UV-visible reflectance measurements confirm the occurrence of metallic silver into the deposited films. The increase of the oxygen flow rate induces a continuous increase of the film oxygen concentration that can be correlated to the evolution of the film reflectance and the film electrical resistivity. Finally, the structural changes vs. the oxygen content are discussed in terms of reactivity of sputtered atoms with oxygen.     

Effect of interfacial diffusion on microstructure and properties of FePt/B4C multifunctional multilayer composite films

FePt/B₄C multilayer composite films were prepared by magnetron sputtering and subsequent annealing in vacuum. By changing Fe layer thickness of [Fe/Pt]₆/B₄C films, optimal magnetic property (8.8 kOe and remanence squareness is about 1.0) is got in [Fe(5.25 nm)/Pt(3.75 nm)]₆/B₄C sample whose composition is Fe rich and near stoichiometric ratio. The characterizations of microstructure demonstrate that the diffusion of B and C atoms into FePt layer depends strongly on B₄C interlayer thickness. When B₄C interlayer thickness of [Fe(2.625 nm)/Pt(3.75 nm)/Fe(2.625 nm)/B₄C]₆ films is bigger than 3 nm, stable value of grain size (6-6.5 nm), coercivity (6-7 kOe) and hardness (16-20 GPa) is observed. Finally, the multifunctional single FePt/B₄C composite film may find its way to substitute traditional three-layer structure commonly used in present data storage technology.