Structural relaxation and rigidity transition in aged and rejuvenated AsxSe100−x glasses

Differential scanning calorimetry (DSC) measurements were performed to investigate the kinetics of the structural relaxation in aged and unaged (rejuvenated) As_xSe_100−x glasses with 0≤x≤40. The activation energy of the glass transition (E_a) of the aged and rejuvenated glasses was determined from the variation of the glass transition temperature (T_g) with the heating rates (β). Significant effect of prolonged aging of the glasses on the values E_a was observed. Evidence of transition from floppy to rigid phase is presented. The observed significant physical aging in samples with composition x<40 indicates the absence of the intermediate phase. The compositional dependence of T_g for aged and rejuvenated data was analyzed using the stochastic agglomeration theory.     

Emission properties of laser ablation of SnO2: Sb transparent conducting film and KTiOPO4 crystal

Optical emission spectra of Nd:YAG laser ablation of KTiOPO₄ (KTP) crystal and SnO₂:Sb transparent conducting thin film were recorded and analyzed in vacuum and in air. The integral intensities of spectral lines from laser-ablated KTP crystal were obtained as functions of distance from the target surface and laser power density in vacuum and in air. The ambient gas effects on pulsed laser ablation of target were discussed. We also performed laser ablation of SnO₂:Sb transparent conducting thin film in air and the electron temperature and full-width at half-maximum (FWHM) of atomic and ionic spectral lines in the plasma were quantified using Boltzmann plot method and Lorentzian fit, respectively. Integral intensities of atomic and ionic Sn spectral lines were also obtained as functions of distance from the target surface and laser irradiance. The intensity ratio of ionic and atomic Sn spectral lines as a function of laser power density was got which gives some information about the variation of ionization ratio with laser irradiance in the plasma produced by high-power laser.     

Electrical and optical properties of GexFexSe100−2x chalcogenide thin films

Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated Ge_xFe_xSe_100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap E_opt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(E_F), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature T_g cohesive energy C.E and number of constraints N_Co with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers.     

The study of optical parameters and DC conductivity of Se100−xHgx thin films

Se_100−xHg_x bulk samples have been prepared by conventional melt quenching technique. The thin films of the material have been prepared on glass substrate using the thermal evaporation technique. The transmission spectra has been studied to measure the optical constants like absorption coefficient (α), extinction coefficient (K), optical band gap (E_g), Urbach energy (E_e). The DC conductivity (σ_dc) of Se_100−xHg_x has been also studied to find the activation energy (ΔE_a)$(\mathrm{\Delta }{E}_a)$. The optical band gap increases and Urbach energy first increases then decreases with increase in Hg concentration. DC conductivity and activation energy increases with increase in Hg concentration. These materials are found suitable for the optical disk materials and in optoelectronic devices due to their high absorption coefficient and dependence of reflectance on composition.     

Second-harmonic generation in the thermal/electrical poling (100−x)GeS2·x(0.5Ga2S3·0.5CdS) chalcogenide glasses

Utilizing Maker fringe (MF) method, second-harmonic generation (SHG) has been observed within the GeS₂-Ga₂S₃-CdS pseudo-ternary glasses through thermal/electrical poling technique. The SHG phenomenon was considered to be the result of breakage of the glassy macroscopic isotropy originated from the reorientations of dipoles during the thermal/electrical poling process. Under the same poling condition conducted with 5 kV and 280 °C for 30 min, the maximum value of second-order nonlinear susceptibility χ⁽²⁾ of the poled (100−x)GeS₂·x(0.5Ga₂S₃·0.5CdS) glasses was obtained to be ≈4.36 pm/V when the value of x is equal to 30. Nonlinear dependence of χ⁽²⁾ on compositions of these glasses can be well explained according to the theory related to the reorientation of dipoles.     

Specific heat and magnetic susceptibility of single-crystalline ZnCr2−xAlxSe4 (x=0.15, 0.23)

A correlation between the second critical field H_c2 of the helix to paramagnetic transition and the magnetic specific heat C-peak was found in ZnCr_2−xAl_xSe₄ spinel single crystals with x=0.15, 0.23. The specific heat peak is anomalously sharp for all finite magnetic fields used here and this points to a first order magneto-structural transition (from cubic to tetragonal symmetry). The C(T)-peak is increasingly suppressed as the external field increases. Approaching the Neel temperature T_N, a broad ac-magnetic susceptibility peak is observed for zero dc-magnetic field. That peak does not show an energy loss and thus points towards a return to a second order type of transition. The magnetic contribution to the specific heat displays a sharp peak at T_N and is maximal at the spin fluctuation temperature T_sf=34 K. T_sf is related to the maximum of the magnetic susceptibility at T_m=40 K (at 50 kOe) in the spin fluctuation region, as evidenced by the entropy exceeding 90% of the entropy calculated classically for the complete alignment of the Cr spins, (2−x)R ln(2S+1). The X-ray photoelectron spectroscopy (XPS) data indicate that Al-substitution does not affect Cr³⁺ 3d³ electronic configuration.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Short-range order analysis and some physical properties of InxSe1−x glasses

Bulk In_xSe_1−x (with x=5-25 at%) glasses were prepared using the melt-quench technique. Short range order(SRO) was examined by the X-ray diffraction using Cu(k_α) radiation in the wave vector interval 0.28≤k≤6.5 A⁰⁻¹.The SRO parameters have been obtained from the radial distribution function. The inter-atomic distance obtained from the first and second peak are r₁=0.263 and r₂=0.460 nm, which is equivalent In-Se and Se-Se bond length. The fundamental structural unit for the studied glasses is In₂Se₃ pyramid. Using the differential scanning calorimetry (DSC), the crystallization mechanism of In_xSe_1−x chalcogenide glass has been studied. The glass transition activation energy (E_g) is 289±0.3 kj/mol.There is a correlation amongst the glass forming ability, bond strength and the number of lone pair electrons. The utility of the Gibbs-Di Marzio relation was achieved by estimating T_g theoretically.     

FexNi100−x nanometric films deposited by laser ablation on SiO2/Si substrates

Fe_xNi_100−x nanometric films were deposited on SiO₂/Si substrates at room temperature using the pulsed laser deposition technique. The targets were Fe-Ni amorphous magnetic foils with composition Fe₅₀Ni₅₀, Fe₃₅Ni₆₅ and Fe₂₂Ni₇₈. Morphological and structural properties of the deposited films were investigated using scanning electron microscopy, Rutherford backscattering spectrometry, grazing incidence X-ray diffraction, and X-ray reflectivity. Electrical and magnetic characteristics of the films were investigated by using the four-point probe and the magneto-optic Kerr effect techniques, respectively. The film properties are strictly dependent on the Fe-Ni compositional ratio.     

Properties of CuIn(SxSe1−x)2 polycrystalline thin films prepared by chemical spray pyrolysis

CuIn(S_xSe_1−x)₂ thin polycrystalline films were grown by the chemical spray pyrolysis method on the glass substrate at 280-400°C. The alloy composition in the film was studied with relation to that in the splay solution. Films were characterized by X-ray diffraction, optical absorption, Raman spectroscopy, resistivity and surface morphology. The CuInSe₂-rich alloy films grown at high substrate temperature had chalcopyrite structure, while, the CuInS₂-rich films grown at low substrate temperature exhibited sphalerite structure. Optical-gap energies were smaller than that of the bulk crystal by 0.1-0.2 eV for CuInS₂-rich films. Raman spectra exhibited both CuInSe₂-like and CuInS₂-like A₁ modes, and their relative changed systematically with alloy composition.     

Boson peak of AsxS1−x glasses and theoretical calculations of low frequencies clusters vibrations

The results of comparison of spectral position of the LF bands of g-As₂S₃ and g-As₂₂S₇₈ with theoretical calculations of vibrational spectra of different clusters (As₂S₄, As₂S₅, As₂S₆, AsS₃-As₃) in the LF region (10-85 cm⁻¹) are given. The torsion type vibrations of the small chain-like clusters are located in the same spectral region as Boson peak of As-S glasses system. They can make several contributions to the LF spectrum. The cluster lengths by weight distribution functions f(L)*L are from 5.5 to 10.1 Å and from 4.5 to 7.5 Å for g-As₂S₃ and g-As₂₂S₇₈, respectively. The lognormal fittings of the f(L)*L functions give the most probably values about the 7.6 Å (for g-As₂S₃) and 6.2 Å (for g-As₂₂S₇₈).     

Photoconductivity of Se85−xTe15Hgx thin films

The photoconductive properties such as dark conductivity, steady state and transient characteristics of a-Se_85−xTe₁₅Hg_x thin films, prepared by thermal vacuum evaporation technique have been studied in the temperature range 312–380 K. Analysis of data shows that the activation energy of dark current is greater as compared to the activation energy of photocurrent. The activation energy increases at higher concentration of Hg which shows that the defect density of states decreases. Analysis of intensity dependent photoconductivity shows that the bimolecular recombination is predominant. The transient photoconductivity shows that the carrier lifetime decreases with the increase in Hg concentration and increases at higher concentration of Hg. This decrease is due to the transition trapping process. Further the photosensitivity and carrier lifetime increases at higher concentration of Hg which also confirms that the density of defect states decreases.     

Substitutional sites of Co ions in CuGa1−xAlxSe2:Co crystals

The substitutional sites of Co²⁺ ions in Co²⁺-doped CuG_1−xAl_xSe₂ (including CuGaSe₂ where x=0 and CuAlSe₂ where x=1) semiconductors are studied by analyzing the composition x dependence of optical spectral parameters reported in the previous literature for these materials. From the studies, we suggest that Co²⁺ occupy I-group cation site rather than III-group cation site. The suggestion is discussed.     

Thermal diffusivities and molar volumes of ternary Al20 AsxTe80−x alloy glasses: evidence of self-organization

Thermal diffusivities (α) and molar volumes (V_m) of bulk Al₂₀As_xTe_80−x alloy glasses in the composition range 0≤x≤35 are examined. The results reveal a broad maximum in alpha and a broad minimum in V_m in the 15<x<25 range. Earlier temperature modulated differential scanning calorimetric measurements on these glasses have revealed the non-reversing heat flow to show a global minimum (reversibility window) in the same composition range. Taken together these results suggest that present glasses in the 15<x<25 range are self-organized. The thermal diffusivity maximum observed near x=20 is consistent with a minimal scattering of thermal waves in the homogeneous and stress-free glass composition residing in the center of the self-organized phase.     

Growth, optical properties and laser performance of NdxLu1−xVO4 series crystals

Nd_xLu_1−xVO₄ (x = 0, 0.005, 0.02, 0.023, 0.03 and 0.05) series crystals have been grown by the Czochralski method. The results of X-ray powder diffraction experiments show that these crystals belong to the zircon-type structure. The cutoff wavelength of LuVO₄ is 330 nm and the transmittance is about 80% in 540-3010 nm. The functional relation of absorption coefficient α at 808 nm on Nd³⁺-doped concentration N_d in units of atomic % is obtained to be α = 7.649 N_d. The results of Judd-Ofelt analysis show that there is no obvious concentration quenching effect below 3 at.% doped concentrations. The highest output power at 1.06 μm is 1090 mW for Nd_0.02Lu_0.98VO₄ at the pumping power of 6.58 W of a laser diode, the optical-optical conversion efficiency is 16.6% and slope efficiency is 19.4%.     

Combinatorial ion beam synthesis of CdSxSe1−x nanocrystals

In this presentation we focus on the synthesis of buried multielemental semiconductor nanoparticles by sequential high dose ion implantation and post-implantation annealing. Nanocluster formation and alloying was studied by Raman-, Rutherford Backscattering Spectroscopy (RBS) and X-ray diffraction analysis (XRD) on a materials library of CdS_xSe_1−x nanoclusters buried in thermally grown SiO₂ on silicon. Characteristic peak shifts of the LO-Raman signal and XRD-peaks due to varying S- and Se-fraction indicate that the ion beam synthesized clusters consist of a solid solution of Cd, S and Se. In addition the influence of the implanted dose ratios on the structural evolution of the nanocluster-SiO₂ system will be discussed.     

Thermal characterization of Se85−xSb15Snx (10≤x≤13) chalcogenide glasses

Results of crystallization kinetics, viscosity, specific heat, thermal stability, and glass forming ability of Se_85−xSb₁₅Sn_x (x=10, 11, 12.5, and 13) chalcogenide glasses, using differential scanning calorimeter (DSC), under non-isothermal condition have been reported and discussed. The variation of the peak temperature of crystallization T_p with the heating rate β has been used to investigate the growth kinetics using Kissinger, Takhor, and Augis-Bennet models. The activation energy of crystallization E_c has been found to increase with Sn content and the crystal growth occurs in one dimension. The increasing trend of E_c is interpreted in terms of enhancement of the degree of cross-linking due to the formation of SnSe_4/2 structural units of energies higher than that of Se-Se and Se-Sb bond energies. The viscosity η against 1/T curves has also been drawn and indicated that the atoms of ternary Se-Sb-Sn glasses required more energy, with the addition of Sn, to complete the transformation from amorphous to crystalline state. The demand for thermal stability has been ensured through the calculations of the enthalpy released ΔH_c during the crystallization process and S-parameter, while the obtained values of the reduced glass transition temperature T_rg and Hurby number H_R have been used to estimate the glass forming ability (GFA). Results reveal that, both thermal stability and GFA enhanced with increasing Sn content and the studied samples were prepared from strong glass-forming liquids. The obtained values for the specific heat difference ΔC_p, between the equilibrium liquid and the glass, have been found to decrease with increasing Sn content and are in support of the results of thermal stability and GFA.     

Crystallization kinetics of a-Ga5Se95−xSbx

The kinetics studies of a-Ga₅Se_95−xSb_x (x=0, 1, 5, 10) is analyzed by an isothermal and non-isothermal technique. By isothermal technique the analysis of crystallization kinetics is taken at temperatures between the glass transition and crystallization. The activation energy of crystallization (ΔE_c) and order parameter (n) are calculated by fitting the values of extent of crystallization (α) in the Avrami's equation. By non-isothermal technique crystallization kinetics of a-Ga₅Se_95−xSb_x (x=0, 1, 5, 10) with different heating rates of 5, 10, 15 and 20 K/min have been studied by using the Differential Scanning Calorimeter (D.S.C.). The glass transition temperature, crystallization temperature at different heating rates and structural change during glass transition has been determined from an empirical relation. From the heating rate, the dependence of the glass transition and crystallization temperatures, the activation energy for structural relation (Δe_t), the activation energy of crystallization (ΔE_c), and the order parameter (n) are calculated.     

Electronic structure and optical properties of TbNi5−xCux

In this paper we present theoretical investigation of optical conductivity for intermetallic TbNi_5−xCu_x series. Within the framework of LSDA+U calculations, electronic structure for x=0, 1, 2 is calculated and additionally optical conductivity is obtained. Disorder effects of Cu for Ni substitution on a level of LSDA+U densities of states (DOS) are taken into account via averaging over all possible Cu ion positions in the unit cell for given doping level x. Gradual smoothing of optical conductivity structure at 2 eV together with simultaneous intensity growth at 4 eV corresponds to increase of Cu and decrease of Ni content.     

Facile synthesis of red- to near-infrared-emitting CdTexSe1−x alloyed quantum dots via a noninjection one-pot route

High-quality CdTeSe colloidal nanocrystals with gradient distribution of components, consisting of Te-rich inner cores and Se-rich outer shells, were synthesized in a “green” solvent paraffin via a noninjection one-pot approach with the use of cadmium oxide (CdO), elemental tellurium, and elemental selenium as Cd, Te, and Se sources, respectively. All of these reactants were loaded at room temperature. This features synthetic reproducibility and large-scale capability. The bandgap engineering of the obtained CdTeSe QDs can be conveniently realized through the variation of growth temperature. Red- to near-infrared-emitting (620-780 nm) QDs with nearly identical particle sizes can be obtained when the reaction temperature was changed from 180 to 280 °C with the fixation of precursor feed ratio at 5Cd-0.5Te-0.5Se. The as-prepared CdTeSe QDs exhibit PL QY as high as 53%. The resulting CdTeSe QDs were characterized by UV-vis and photoluminescence spectroscopy, powder X-ray diffraction, transmission electron microscopy, and inductively coupled plasma atomic emission spectroscopy.