Surface etching induced by Ce silicide formation on Si(1 0 0)

We investigate the temperature-dependent surface etching process induced by Ce silicide on Si(1 0 0) using scanning tunneling microscopy and X-ray photoelectron spectroscopy. We found that step edges on the Si(1 0 0) surface are gradually roughened due to the formation of Ce silicide as a function of substrate temperature. Unlike the Si(1 1 1) surface, however, terrace etching also occurs in addition to step roughening at 500 °C. Moreover, we found that Si(1 0 0) dimers are released and formed dimer vacancy lines because bulk diffusion of Ce silicide into Si(1 0 0) surface occurs the defect-induced strain at higher temperature (∼600 °C).     

First-principles study on the half-metallicity of zinc-blende CrP(1 1 0) surface

We have investigated the half-metallicity and magnetism at the (1 1 0) surface of CrP by using the all-electron full-potential linearized augmented plane wave (FLAPW) method within the generalized gradient approximation (GGA). From the calculated local density of states (LDOS), we found that the (1 1 0) surface of CrP preserves the half-metallicity, but the band gaps (∼1.1 eV) of the minority states for the surface Cr and P atoms are much reduced from the bulk value (∼1.9 eV). The magnetic moment of the P is coupled antiferromagnetically to that of the Cr. The magnetic moment of surface Cr atom is calculated to be 3.31μ_B which is increased by 10% compared to the bulk value, 3.00μ_B.     

Co growth on Si(0 0 1) and Si(1 1 1) surfaces: Interfacial interaction and growth dynamics

In situ X-ray photoelectron spectroscopy (XPS) and ex situ atomic force microscopy (AFM) were used to study the growth of thin cobalt films at room temperature (RT) on both clean and H-terminated Si(0 0 1) and Si(1 1 1) surfaces. The growth proceeds by first forming an initial CoSi₂-like phase at the growth front of the Si substrate. With increasing Co coverage the interfacial layer composition becomes richer in Co and eventually a metallic Co film is formed on top. Hydrogen termination of the Si surface did not suppress the reaction of Co and Si. A pseudo-layer-by-layer growth mode is proposed to describe the growth of Co on H-terminated Si surfaces, while closed-packed small island growth occurs on clean Si surfaces. The difference in growth mode can be attributed to the increase in the surface mobility of Co adatoms in the presence of hydrogen.     

Diffusion of single adatom Cu on Cu (0 0 1) and (1 1 0) surfaces

With static relaxation, the surface diffusion activation energies of a single Cu adatom migrated by both atomic exchange and hopping mechanisms and the forces acted on the diffusing adatom from other atoms of Cu (0 0 1) or (1 1 0) surface are calculated by using the MAEAM. When adatom migrated on Cu (0 0 1) or (1 1 0) surface, the increment curves of the system energy by hopping mechanism are symmetrical and the saddle points are in the midpoints of the migration path, but the ones by the exchange mechanism are dissymmetrical and the saddle points are always close to the initial hole positions of the adatom and away from the initial equilibrium positions of the exchanged atom. From minimization of both the diffusion activation energy and the force acted on the diffusing adatom from other atoms, we found that, on Cu (0 0 1) surface the favorable diffusion mechanism is hopping mechanism, however, on Cu (1 1 0) surface, hopping via long bridge is easier than the exchange mechanism but the hopping via short bridge is more difficult than the exchange mechanism.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.     

Spin excitations in exchange-dominated regime on (1 0 0) and (1 1 0) antiferromagnetic surfaces

Theoretical investigations in the context of Heisenberg model have been made for (1 0 0) and (1 1 0) magnetic surface dynamics for a semi-infinite antiferromagnet geometry. The calculations apply to the exchange dominated regime and are based on a spin-wave operator and matching technique within the framework of non-interacting spin-wave theory. The theoretical formalism developed here does not include either relaxation or reconstruction at the surface and no electronic effects have been considered. Dispersion curves of surface spin-waves are obtained within a single framework by matching the evanescent and travelling solutions, respectively, obtained from the secular equation and satisfying the boundary conditions brought about by the surface. The excitation spectrum of the surface spin-waves has been obtained and compared with that for bulk spin-waves. The quantized bulk modes of the same energy travelling to and away from the surface are related to one another by reflection coefficients, for which sum rules are derived. The numerical results for the evolution of acoustic and optical modes are presented for two different surface planes, namely (1 0 0) and (1 1 0). The findings reported here show that: (i) the reduced coordination number for atoms near the surface as well as the surface orientation play an obvious and crucial part in the surface spin-wave spectra; (ii) the evolutions of bulk as well as surface modes undergo significant changes as a function of the bulk-surface exchange integrals for a given direction of propagation of the spin-wave modes along the surface.     

The stability of fcc (1 1 1) metal surfaces

The results of a theoretical study on the stability of fcc (1 1 1) metal surfaces to certain commensurate-incommensurate reconstructive phase transformations is presented. Specifically, we have performed computer simulation studies of the 22×√3 surface reconstruction of Au(1 1 1). This reconstruction involves a uniaxial contraction of the top monolayer corresponding to a surface strain of about 4.3% and has been observed to be the stable structure for the clean surface at low temperatures. The driving force for the reconstruction has been associated with the quantity (f−γ), where f is the surface stress and γ is the surface free energy, while the opposing force is due to the disregistry with the underlying lattice. A continuum model yields a stability criterion that depends on the knowledge of a small number of physical quantities: f, γ, the equilibrium nearest-neighbor spacing r₁ and the shear modulus G. We have performed molecular dynamics simulations as a general stability analysis of these types of reconstructions. The results are in excellent agreement with the continuum model. The simulations using embedded-atom method potentials also accurately reproduce many observed features of the reconstruction on Au(1 1 1).     

Diffusions of small clusters on Pt(1 1 1) and Cu(1 1 1) surfaces

Diffusions of small cluster Pt₆ on Pt(1 1 1) surface and Cu₆ on Cu(1 1 1) are studied by molecular dynamics simulation, respectively. The atomic interaction is modeled by the semiempirical potential. The results show that the diffusion processes in the two systems are far different. For example, on Pt(1 1 1) surface, the hopping of single atom and the shearing of two atoms of hexamer only occur on the adatom(s) adsorbed at B-step, while on Cu(1 1 1) surface they can appear on the adatom(s) either at A-step or B-step. To the concerted translation of the parallelogram hexamer, the anisotropy in the diffusion path is observed in the two systems, the mechanisms and then the preferential paths, however, are completely different. The reasons for these diffusion characteristics and differences are discussed.     

The interaction of Fe on MgO(1 0 0) surfaces

The atomic interaction and magnetic properties of ultrathin Fe films grown on cleaved and polished MgO(1 0 0) surfaces were studied by conversion electron Mössbauer spectroscopy (CEMS). ⁵⁷Fe layers were deposited as probe atoms in different layer positions in 10 ML thick Fe films. Fe layers of different thicknesses were formed on polished and cleaved substrate surfaces at RT deposition. The analysis of the spectra showed no Fe-O^2- interaction in MgO/Fe interface. FeO phase formation was excluded. The Mössbauer spectrum of 5 ML ⁵⁷Fe sample showed enhanced internal magnetic field at 80 K. No interdiffusion of ⁵⁷Fe and ⁵⁶Fe atoms was observed between the layers at room temperature.     

The surface stress of the (1 1 0) and (1 0 0) surfaces of rutile and the effect of water adsorbents

The surface stress on clean TiO₂ (1 1 0) and (1 0 0) surfaces, and those with four types of adsorbent - (i) molecularly adsorbed water, (ii) dissociatively adsorbed water, (iii) dissociatively adsorbed water at an oxygen vacancy, and (iv) adsorbed hydrogen - was investigated in the framework of density functional theory using a slab model. The calculations were intended to rationalize the effect of the artificially introduced stress that occurs in experimentally photoinduced hydrophilicity. Tensile stress was observed for a clean (1 1 0) surface, and a mixture of tensile and compressive stress for a clean (1 0 0) surface. The adsorbate-induced surface stresses were analyzed in terms of the sixfold coordinated character of the surface titanium atoms, hydrogen bonds between the adsorbents and the bridging oxygen atoms, and the change in electron density in the vicinity of the surface.     

Theoretical study of oxygen adsorption at the Fe(1 1 0) and (1 0 0) surfaces

Electronic, magnetic and structural properties of atomic oxygen adsorbed in on-surface and subsurface sites at the two most densely packed iron surfaces are investigated using density functional theory combined with a thermodynamics formalism. Oxygen coverages varying from a quarter to two monolayers (MLs) are considered. At a 1/4 ML coverage, the most stable on-surface adsorption sites are the twofold long bridge sites on the (1 1 0), and the fourfold-hollow sites on the (1 0 0) surface. The presence of on-surface oxygen atoms enhances the magnetic moments of the atoms of the two topmost Fe layers. Detailed results on the surface magnetic properties, due to O incorporation, are presented as well. Subsurface adsorption is found unfavored. The most stable subsurface O, in tetrahedral positions at the (1 0 0) and octahedral ones at the (1 1 0) surface, are characterized by substantially lower binding than that in the on-surface sites. Subsurface oxygen increases the interplanar distance between the uppermost Fe layers. The preadsorbed oxygen overlayer enhances binding of subsurface O atoms, particularly for tetrahedral sites beneath the (1 1 0) surface.     

Sb incorporation at GaAs(0 0 1)-(2 × 4) surfaces

We examine the Sb incorporation and resulting surface reconstructions of Sb and GaSb deposited on GaAs(0 0 1). These films exhibit a mixed surface reconstruction of α2(2 × 4) and α(4 × 3). Initially, Sb reacts with Ga on the surface to form 2D islands of GaSb with an α(4 × 3) surface reconstruction. The 2D islands grow to a critical size of 30 nm², beyond which the atomic surface structure of the 2D island transforms to a α2(2 × 4) reconstruction in order to reduce the strain induced surface energy. This transformation is limited by the availability of Ga, which is necessary in higher quantities for the α2(2 × 4) reconstruction than for the α(4 × 3). The transformation results in a mixed α2(2 × 4)-α(4 × 3) surface where the surface reconstruction is coupled to the surface morphology, which may in the future provide a pathway for self-assembly of structures.     

A real-time investigation by RHEED of the homoepitaxial growth of GaAs on (0 0 1) oriented surfaces

In this letter we report on the formation of long-range surface disorder features during the growth by molecular beam epitaxy (MBE) of homoepitaxial GaAs (0 0 1) films having the β2(2 × 4) reconstruction. Observations were made in real-time at the growth temperature using reflection high energy electron diffraction (RHEED) and analyzed kinematically. We show that kinks (cooperative shifts of whole columns of 2 × 4 units along the [1 1 0] direction) form rapidly as growth commences and that the antiphase domain structure present on the substrate prior to growth as a result of the arrangement of As-As dimers persists. This produces a surface with two types of long-range disorder. We speculate on the role of incident Ga atoms on this process.     

Water adsorption and dissociation on BeO(0 0 1) and (1 0 0) surfaces

Plateaus in water adsorption isotherms on hydroxylated BeO surfaces suggest significant differences between the hydroxylated (1 0 0) and (0 0 1) surface structures and reactivities. Density functional theory structures and energies clarify these differences. Using relaxed surface energies, a Wulff construction yields a prism crystal shape exposing long (1 0 0) sides and much smaller (0 0 1) faces. This is consistent with the BeO prisms observed when beryllium metal is oxidized. A water oxygen atom binds to a single surface beryllium ion in the preferred adsorption geometry on either surface. The water oxygen/beryllium bonding is stronger on the surface with greater beryllium atom exposure, namely the less-stable (0 0 1) surface. Water/beryllium coordination facilitates water dissociation. On the (0 0 1) surface, the dissociation products are a hydroxide bridging two beryllium ions and a metal-coordinated hydride with some surface charge depletion. On the (1 0 0) surface, water dissociates into a hydroxide ligating a Be atom and a proton coordinated to a surface oxygen but the lowest energy water state on the (1 0 0) surface is the undissociated metal-coordinated water. The (1 0 0) fully hydroxylated surface structure has a hydrogen bonding network which facilitates rapid proton shuffling within the network. The corresponding (0 0 1) hydroxylated surface is fairly open and lacks internal hydrogen bonding. This supports previous experimental interpretations of the step in water adsorption isotherms. Further, when the (1 0 0) surface is heated to 1000 K, hydroxides and protons associate and water desorbs. The more open (0 0 1) hydroxylated surface is stable at 1000 K. This is consistent with the experimental disappearance of the isotherm step when heating to 973 K.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Core-level shifts of the c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) surfaces

We have studied In-stabilized c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III–V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the ζ and ζa models, which have been previously established to describe the atomic structures of the III–V(1 0 0)c(8 × 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III–V(1 0 0)c(8 × 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated ζ and ζa SCLS values shows that the InSb spectra are reproduced by the ζ SCLSs better than by the ζa SCLSs. Interestingly, the ζa fits agree better with the InAs spectra than the ζ fits do, indicating that the ζa model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III–V(1 0 0)c(8 × 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.     

Structures and stability of Ag clusters on Ag(1 1 1) and Ni(1 1 1) surfaces

The structures of the lowest total energy for small Ag_N clusters with N = 2-20, which are grown on Ag(1 1 1) and Ni(1 1 1) surfaces, have been determined using a combination of the embedded-atom method and the basin-hopping algorithm. It is found that the particularly stable Ag clusters with N<18 have similar geometries on both surfaces when comparing clusters of the same size. On the other hand, the geometries of the less stable Ag clusters in the same size range differ for the two surfaces. From N?18, the sizes of the particularly stable structures are different for the two different substrates. Due to the large size mismatch of the two types of atoms it is energetically unfavorable for Ag to form a pseudomorphic monolayer structures on Ni(1 1 1) and there is considerable strain produced at the interface. The effect of this strain and the increased adatom-substrate interactions lead to irregular and elongated structures of the adsorbed Ag clusters.     

Enhanced reactivity and selectivity in oxidation of Cu(1 0 0) and α-Cu-Al(5 at.%)(1 0 0) surfaces studied by electron and ion spectroscopies

In this study we investigate the influence of alloying on the reactivity and bonding of oxygen on α-Cu-Al(5 at.%)(1 0 0) oriented single crystal surfaces by X-ray photoelectron spectroscopy (XPS), ultra-violet spectroscopy (UPS) and low energy ion scattering (LEIS) spectroscopy, at room temperature. It was found that alloying results in an enhanced reactivity of both Cu and Al sites in comparison with the pure metals. According to adsorption curves calculated from XPS, saturation of the alloy surface occurs for exposures of ∼15 L. At saturation the total amount of adsorbed oxygen is similar for the alloy and pure copper surfaces. It was determined that first mostly Al sites are oxidized, followed by simultaneous oxidation of Cu and Al sites. At saturation the amount of oxygen bonded to Cu sites is ∼1.7 larger then that bonded to Al sites. From a comparison of the XPS and LEIS data analysis as a function of oxygen exposure it was found that oxidation of α-Cu-Al(5 at.%)(1 0 0) alloy is a multi-stage process with fast and slow stages. These stages involve an interplay of chemisorption, sub-surface diffusion of oxygen and Al segregation. UPS measurements show an increase in the work function of the alloy surface with oxygen adsorption. This is a contrast to pure Cu surfaces where the work function decreases at the initial stages of oxidation followed by an increase with oxygen exposure. Annealing to 400 °C drives the oxidized alloy surface into its thermodynamic state resulting in the formation of an aluminum oxide layer. Possible mechanisms to explain the enhanced reactivity of the alloy surface compared to that of pure copper are suggested and discussed.     

Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.     

Kinetic length and step permeability on the Si(1 1 1) (1 × 1) surface

Information on the kinetic regime of step motion and step permeability on the Si(1 1 1) (1 × 1) surface has been obtained from observations of island decay that were made with low energy electron microscopy. Island area during decay exhibits the expected power law dependence on time, with exponent, α, that is a qualitative indicator of the kinetic regime. A new method is presented for determining the kinetic length quantitatively from measurements of the decay exponent in the symmetric island decay geometry on top of a larger concentric circular island. Using this approach, we determine the kinetic length on the Si(1 1 1) (1 × 1) surface at 1163 K to be d ∼ 75a, where a is the lattice constant. It is shown that this result locates step motion firmly in the diffusion limited regime. Mass conservation of decaying island stacks is also observed at this temperature, which indicates that steps are effectively impermeable in the context of diffusion limited step kinetics.