A combined study of the oxidation mechanism and resistance of AISI D6 steel exposed at high temperature environments

In this work it is thoroughly examined the oxidation performance of D6 tool steel under isochronal and isothermal oxidations. Isochronal oxidation tests, from ambient temperature to 1000 °C, revealed the oxidation rate of the coupons at different temperatures. Four different temperatures were selected for the isothermal oxidation test, which correspond to different oxidation rates. The oxidation and the examination of the samples were accomplished by thermogravimetric analysis (TG) in air with which the mass gain of the samples due to oxidation was simultaneously acquired. The samples were, also, examined by scanning electron microscopy (SEM), in order to observe their surface before and after the oxidation tests. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) were used for the accurate identification of the as formed oxides. The results revealed that in every case two distinct layers of oxides were formed while their composition was different, depending on the temperature of oxidation. Furthermore, the thickness of the as formed oxides is increased when the oxidation is performed at higher temperatures.     

Examination of the oxidation resistance of high-alloyed tool steels at elevated temperatures

In the present work the structure of two different tool steels is examined before and after oxidation up to 1000 °C in air. The materials under examination have different chromium contents. Also, the first contains vanadium (S1 tool steel) and the second tungsten (S2 tool steel) as alloying element, while the rest are common. The examination took place by thermogravimetric analysis, scanning electron microscopy, transmission electron microscopy and X-ray diffraction. From this study it is deduced that the structure of the two steels, before oxidation, has several distinguishing differences mostly in the chromium distribution in the iron matrix. The oxidation tests revealed that S2 oxidizes at higher temperatures than S1, but finally, at 1000 °C, S2 tool steel has greater mass gain, because it oxidizes at a higher rate.     

Difference in high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content

The high-temperature oxidation resistance of amorphous Zr-Si-N and W-Si-N films with a high Si content (≥20 at.%) deposited by reactive dc magnetron sputtering at different partial pressures of nitrogen was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C (a temperature limit for Si(1 0 0) substrate). Additional analyses including X-ray diffraction (XRD), light optical microscopy (LOM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and microhardness measurement were carried out as well. The obtained results showed (i) an excellent high-temperature oxidation resistance of the Zr-Si-N films up to 1300 °C, (ii) a considerably lower oxidation resistance of the W-Si-N films. The W-Si-N films are completely oxidized at 800 °C with a subsequent volatilization of unstable WO_x oxides. On the other hand, the Zr-Si-N films are oxidized only very slightly on the surface, where a stable oxide barrier layer preventing further inward oxygen diffusion is formed. The thickness of the oxide layer is only about of 3% of the total film thickness. The phase composition, thermal stability of individual phases and amorphous structure were found to be key factors to achieve a high oxidation resistance.     

Characterization and structure study of the anodic oxide film on Zircaloy-4 synthesized using NaOH electrolytes at room temperature

Thick crystalline zirconium oxide films were synthesized on Zircaloy-4 substrates by anodic oxidation at room temperature in NaOH solution with a stable applied voltage (300 V). The film is approximately 4.7 μm in thickness. The XPS and SEM analysis shows that the film is a three-layer structure in water, hydroxide and oxide parts. The thickness of that order is ∼0.01 μm, ∼1 μm, ∼3.7 μm, respectively. The oxide layer is composed of tetragonal and monoclinic phases with the volume ratio about 0.2. Furthermore, the thick anodic film acts as a barrier to oxygen and zirconium migrations. It effectively protects zirconium alloys against the worse corrosion. An extremely low passive current density of ∼0.018 μA/cm² and a low oxidation weight gain of ∼0.411 mg/cm² were also observed in the films.     

Large area mapping of the alloy composition of Alx Ga1–x N using infrared reflectivity

The energy position of a dip observed in the IR‐reflectance spectra recorded from wurtzite c ‐plane Al_x Ga_1–x N epitaxial films grown on SiC substrate reflects the composition of the alloy. A calibration procedure is presented with the possibility of mapping for large area wafer. The technique is non‐destructive, scalable and fast. The limitations are discussed and comparisons with other techniques are made. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

XPS study of the surface chemistry of Ag-covered L-CVD SnO2 thin films

In this paper, we present the results of X-ray photoelectron spectroscopy characterization of SnO₂ thin films prepared by laser chemical vapour deposition (L-CVD) and subsequently covered by Ag atoms just after deposition and after long-term exposed to dry air, subsequent annealing in ultra high vacuum at 400 °C and dry air oxidation at 400 °C. Using the standard analytical procedure based on atomic sensitivity factors, the variation of surface chemistry defined in terms of the relative concentration of the main components of the films after the above-mentioned procedures has been determined. It was confirmed that after dry air exposure as well as dry air oxidation, the layers undergo an oxidation reaching almost SnO₂ stoichiometry. Besides, during ultra high vacuum annealing, the films undergo reduction to almost SnO stoichiometry. At the same time, Ag atoms deposited at the top of layers diffuse into the subsurface layers. This was confirmed by X-ray photoelectron spectroscopy depth profiling analysis.     

Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Influence of both substrate temperature, T_s, and annealing temperature, T_a, on the structural, electrical and microstructural properties of sputtered deposited Pt thin films have been investigated. X-ray diffraction results show that as deposited Pt films (T_s = 300, 400 °C) are preferentially oriented along (1 1 1) direction. A little growth both along (2 0 0) and (3 1 1) directions are also noticed in the as deposited Pt films. After annealing in air (T_a = 500-700 °C), films become strongly oriented along (1 1 1) plane. With annealing temperature, average crystallite size, D, of the Pt films increases and micro-strain, e, and lattice constant, a₀, decreases. Residual strain observed in the as deposited Pt films is found to be compressive in nature while that in the annealed films is tensile. This change in the strain from compressive to tensile upon annealing is explained in the light of mismatch between the thermal expansion coefficients of the film material and substrate. Room temperature resistivity of Pt films is dependant on both the T_s and T_a of the films. Observed decrease in the film resistivity with T_a is discussed in terms of annihilation of film defects and grain-boundary. Scanning electron microscopic study reveals that as the annealing temperature increases film densification improves. But at an annealing temperature of ∼600 °C, pinholes appear on the film surface and the size of pinhole increases with further increase in the annealing temperature. From X-ray photoelectron spectroscopic analysis, existence of a thin layer of chemisorbed atomic oxygen is detected on the surfaces of the as deposited Pt films. Upon annealing, coverage of this surface oxygen increases.     

Deposition of duplex Al2O3/aluminum coatings on steel using a combined technique of arc spraying and plasma electrolytic oxidation

Plasma electrolytic oxidation (PEO) is a cost-effective technique that can be used to prepare ceramic coatings on metals such as Ti, Al, Mg, Nb, etc., and their alloys, but this promising technique cannot be used to modify the surface properties of steels, which are the most widely used materials in engineering. In order to prepare metallurgically bonded ceramic coatings on steels, a combined technique of arc spraying and plasma electrolytic oxidation (PEO) was adopted. In this work, metallurgically bonded ceramic coatings on steels were obtained using this method. We firstly prepared aluminum coatings on steels by arc spraying, and then obtained the metallurgically bonded ceramic coatings on aluminum coatings by PEO. The characteristics of duplex coatings were analyzed by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). The corrosion and wear resistance of the ceramic coatings were also studied. The results show that, duplex Al₂O₃/aluminum coatings have been deposited on steel substrate after the combined treatment. The ceramic coatings are mainly composed of α-Al₂O₃, γ-Al₂O₃, θ-Al₂O₃ and some amorphous phase. The duplex coatings show favorable corrosion and wear resistance properties. The investigations indicate that the combination of arc spraying and plasma electrolytic oxidation proves a promising technique for surface modification of steels for protective purposes.     

Effect of growth temperature on the morphology and bonded states of SnO2 nanobaskets

The nanobaskets of SnO₂ were grown on in-house fabricated anodized aluminum oxide pores of 80 nm diameter using plasma enhanced chemical vapor deposition at an RF power of 60 W. Hydrated stannic chloride was used as a precursor and O₂ (20 sccm) as a reactant gas. The deposition was carried out from 350 to 500 °C at a pressure of 0.2 Torr for 15 min each. Deposition at 450 °C results in highly crystalline film with basket like (nanosized) structure. Further increase in the growth temperature (500 °C) results in the deterioration of the basket like structure and collapse of the alumina pores. The grown film is of tetragonal rutile structure grown along the [1 1 0] direction. The change in the film composition and bonded states with growth temperature was evident by the changes in the photoelectron peak intensities of the various constituents. In case of the film grown at 450 °C, Sn 3d_5/2 is found built up of Sn⁴⁺ and O-Sn⁴⁺ and the peaks corresponding to Sn²⁺ and O-Sn²⁺ were not detected.     

Microstructure,dielectric, and piezoelectric properties of 0.38Bi(Gax Sc1–x )O3–0.62PbTiO3 high temperature piezoelectric ceramics

0.38Bi(Ga_x Sc_1–x )O₃–0.62PbTiO₃ (BGSPTx) ceramics have been prepared by using the conventional mixed oxide method. X‐ray diffraction analysis revealed that BGSPTx has a pure perovskite structure, and the crystal symmetry of BGSPTx changed from rhombohedral to tetragonal with increasing Ga content (x). The Curie temperature (T_C) of BGSPTx ceramics is in the range of 448–467 °C for different x. The ferroelectric phase transition of BGSPTx was found to be of the first order type according to the Curie–Weiss law. For x = 0.125, BGSPTx ceramics show enhanced piezoelectric properties: piezoelectric constant d₃₃ = 420 pC/N and d₃₁ = –142 pC/N, planar and thickness electromechanical coupling factors k_p = 56.27% and k_t = 56.00%, respectively. The high‐T_C of BGSPTx coupled with its excellent piezoelectric properties suggests those future high‐temperature applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Thermodynamic and kinetic aspects on the selective surface oxidation of binary, ternary and quarternary model alloys

Segregation and selective oxidation phenomena of minor alloying elements during annealing of steel sheets lead to the formation of bare spots after hot dip galvanizing. In order to understand the influence of common alloying elements on the surface chemistry after annealing, model alloys of binary (Fe-2Si, Fe-2Mn and Fe-0.8Cr), ternary (Fe-2Mn-2Si, Fe-2Mn-0.8Cr and Fe-2Si-0.8Cr) and quarternary (Fe-2Mn-2Si-0.8Cr) systems were investigated. The specimens were annealed for 60 s at 820 °C in N₂-5% H₂ gas atmospheres with different dew points −80 and −40 °C, respectively. Surface chemistry of the annealed specimens was obtained by using X-ray photoelectron spectroscopy (XPS). The field emission scanning electron microscopy (FE-SEM) was used to view surface morphology. At low dew point −80 °C, apart from the thermodynamical calculations such as solubility product of oxides and their critical solute concentrations, kinetics play a decisive role on the selective oxidation, i.e. oxygen competition. As expected, the amount of external selective oxidation of alloying elements are well pronounced at higher dew point −40 °C. An attempt has been made to explain the dominant process of Si and Mn on Cr-oxidation and segregation. It is observed that annealing of quarternary system at higher dew point shifts the Cr-oxidation from external to internal.     

Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO<Subscript>4</Subscript> thin films

In the last few years, intensive research activity has been focused on the development of suitable synthesis methods for high-permittivity materials, used for the realization of next-generation microdevices able to fulfil the previsions of the Technology Roadmap of Semiconductors. The use of high-permittivity materials can overcome the difficulties concerning the production of SiO₂-based ultra-thin dielectrics, such as the generation of pinholes and the non-uniformity of the film, which may result in a malfunction in high-density systems. Recently, zirconium titanate thin films were discovered to have very interesting dielectric properties, which suggests a use for them in microwave integrated systems, such as receivers or DRAMs, since they are monophasic, have little dissipation and show a good thermal stability and a high value for the dielectric constant, independent of frequency in the range from kilohertz to a few gigahertz. Real application is possible only in strict connection with the development of a suitable preparation method which allows production with controlled and reproducible characteristics. In this work, the synthesis and characterization of Zr_xTi_1-xO₄ (ZT) thin films grown via MO-CVD is described, studying the influence of growth parameters on their structural, chemical and physical properties. Received: 17 June 2002 / Accepted: 24 June 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +39-06/9067-2445, E-mail: Pad@mlib.cnr.it