共查询到20条相似文献,搜索用时 0 毫秒
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最近单层二硫化钼以其直接带隙的性质及在电子器件、催化、光电等领域中的潜在应用而备受关注.化学气相沉积法能够制备出高质量、大尺寸且性能优良的单层二硫化钼,但其制备工艺比较复杂.本文采用简化的化学气相沉积法在蓝宝石衬底上制备出了大尺寸的单晶二硫化钼.清洗衬底时,只需要简单的清洁,不需要用丙酮、食人鱼溶液(H_2SO_4/H_2O_2=3:1)等处理,这样既减少了操作步骤,又避免了潜在的危险.升温时直接从室温加热到生长的温度,不必分段升温,并且采用常压化学气相沉积法,不需要抽真空等过程,使得实验可以快捷方便地进行.光学显微镜、拉曼光谱和光致发光谱的结果表明,生长的二硫化钼为规则的三角形单层,边长为50μm左右,远大于机械剥离的样品. 相似文献
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Jingjing WangDa Chen Yaoguo GanXuejun Sun Yingying Jin 《Applied Surface Science》2011,257(9):4365-4369
We fabricated a self-assembled monolayer (SAM) modified solid mounted resonator (SMR) for organophosphate vapor detection. The SMR device consisted of a piezoelectric stack and an all-metal Bragg's reflector. The electrode surface is chemically modified with a Cu2+/11-mercaptoundecanoic acid SAM to capture organophosphate compounds. After chemical modification, both the resonance frequency and the Q-factor decrease. Fourier transform infrared external reflection spectroscopy was performed to verify the formation of SAM. Adsorption of organophosphate compounds onto the SAM increases its mass, and the resonance frequency proportionally goes down. The testing results show that the modified SMR can yield a rapid, sensitive, reversible and reproducible response to nerve-agent (dimethyl methyl phosphonate) vapor. This study proves that using the SAM modified SMR to detect trace organophosphate vapor is feasibility. 相似文献
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利用自主研发的线性微波化学气相沉积系统在不同微波功率、微波占空比、基片温度、特气比例条件下制备了SiNx薄膜. 通过扫描电子显微镜、椭圆偏振仪等表征测量技术, 研究了不同工艺参数对SiNx薄膜表面形貌、元素配比、折射率、沉积速度的影响, 并探讨了薄膜元素配比、折射率、沉积速度间的关系. 结果表明: 利用线性微波沉积技术, 不同工艺参数下制备的SiNx薄膜组成元素分布均匀, 同时具有平整的表面状态; 特气比例和微波占空比是影响薄膜折射率的最主要因素, 薄膜折射率在1.92–2.33之间连续可调; 微波功率、微波占空比、沉积温度、特气比例都对SiNx 薄膜沉积速度影响较大, 制备的SiNx薄膜最大沉积速度为135 nm·min-1. 相似文献
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B. Fu 《Applied Surface Science》2010,257(5):1500-1505
This paper addresses the in situ growth stress evolution and post-growth stress relaxation during the phase separation of immiscible Fe0.51Cu0.49 thin films at various in situ deposition temperatures. Each film was sputter-deposited onto a 10 nm Si3N4 underlayer that was grown on top of Si [0 0 1] substrate at 25 °C, 145 °C, 205 °C, 265 °C or 325 °C. The thin film stress was measured using a wafer curvature technique. The in situ growth stress increased in compression with increasing substrate temperature. The stress relaxation of the Fe0.51Cu0.49 was found to have a linear increase with the inverse grain size for films deposited at temperatures greater than 205 °C. The stress state was correlated to the films’ phase and morphology by X-ray diffraction, (scanning) transmission electron microscopy and atomic force microscopy techniques. 相似文献
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A.C. Popescu L. Duta I.N. Mihailescu L.E. Sima D. Janackovic 《Applied Surface Science》2009,255(10):5486-5490
We report on the synthesis by pulsed laser deposition with a KrF* excimer laser source (λ = 248 nm, τ = 25 ns) of bioglass thin films of 6P57 and 6P61 types. Physiology, viability, and proliferation of human osteoblast cells were determined by quantitative in vitro tests performed by flow cytometry on primary osteoblasts cultured on pulsed laser deposited bioglasses. Both types of glass films proved to be appropriate mediums for cell survival and proliferation. In a parallel investigation, cell morphology and adhesion to the surface was studied by fluorescence microscopy and scanning electron microscopy. Strong bonds between the materials and cells were found in both cases, as osteoblast pseudopodes penetrated deep into the material. According to our observations, the 6P57 glass films were superior with respect to viability and proliferation performances. 相似文献
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Strontium hexaferrite (SrFe12O19) films have been fabricated by pulsed laser deposition on Si(1 0 0) substrate with Pt(1 1 1) underlayer through in situ and post annealing heat treatments. C-axis perpendicular oriented SrFe12O19 films have been confirmed by X-ray diffraction patterns for both of the in situ heated and post annealed films. The cluster-like single domain structures are recognized by magnetic force microscopy. Higher coercivity in perpendicular direction than that for the in-plane direction shows that the films have perpendicular magnetic anisotropy. High perpendicular coercivity, around 3.8 kOe, has been achieved after post annealing at 500 °C. Higher coercivity of the post annealed SrFe12O19 films was found to be related to nanosized grain of about 50–80 nm. 相似文献
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在立方氮化硼薄膜气相生长过程中生成的无定形初期层和乱层结构氮化硼中间层,一直是阻碍立方氮化硼薄膜外延生长的主要原因.系统地分析了硅衬底预处理对立方氮化硼薄膜中无定形初期层成分的影响,发现在等离子体化学气相生长法制备薄膜时,硅衬底上形成无定形初期层的可能原因有氧的存在、离子轰击以及高温下硅的氮化物的形成.在H2气氛中1200K热处理硅衬底可以有效地减少真空室中残留氧浓度,除去硅表面的自然氧化层,保持硅衬底表面晶体结构.控制衬底温度不超过900 K,就能防止硅的氮化物的形成,成功地除去无
关键词:
立方氮化硼薄膜
等离子体化学气相生长
界面
电子显微镜 相似文献
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The characterization of the reactions occurring during the atmospheric corrosion of silver surfaces at the metal-atmosphere interface is of great importance as only the exact knowledge of the degradation mechanisms enables the development of suitable corrosion inhibiting steps. For in situ surface analysis three complementary experimental techniques have been combined in order to study the surface chemistry of silver samples exposed to humidified air, CO2, ozone (O3) and ultraviolet (UV) light. In situ infrared reflection absorption spectroscopy (IRRAS) combined with a quartz crystal microbalance (QCM) as well as ex situ time of flight secondary ion mass spectrometry (TOF-SIMS) provide an overall picture of the processes occurring at the metal-atmosphere interface. Investigations were carried out by exposing polycrystalline silver samples to synthetic air containing 50-90% relative humidity (RH) and 250 ppm CO2. Additionally, the samples were exposed to UV light or O3 for certain time periods. The formation of the main corrosion products on the sample surfaces, depending on the relative humidity, O3 content and UV light exposure could be observed in a time resolved way. These investigations reveal the different reaction mechanisms and reaction rates occurring on a silver surface. 相似文献
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Saad Al Tarazi Luca Volpe Luca Antonelli Rashida Jafer Antonio d'Esposito 《辐射效应与固体损伤》2013,168(3):217-224
Silver surfaces have been treated with plasma-enhanced chemical vapor deposition to produce SiO2-like coatings for possible applications in the jewelry industry. Different experimental conditions have been tested in order to optimize the protective effectiveness of the deposited layers. Samples were analyzed with optical and scanning electron microscopy and energy-dispersive spectrometry. 相似文献
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In situ monitoring of nucleation and evolution of Ge nanodots on faintly oxidized Si(1 1 1) surfaces
We have investigated the nucleation and evolution of germanium (Ge) nanodot (ND)s taking place while depositing Ge onto the silicon (Si) (1 1 1) surfaces with ultra-thin Si oxide films by using ultra-high vacuum in situ high-resolution transmission electron microscopy in the profile-imaging geometry. Various types of growth phenomena such as nucleation, growth and coalescence of Ge NDs have successfully been observed. The results show that the growth phenomena of the Ge NDs are dramatically rapid after their size reaches the size of the critical nucleus. The critical nucleus size estimated from a model using the cohesive energy of the Ge NDs has been consistent with observed one. 相似文献
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CeO2 films were prepared on LaMnO3/MgO/Gd2Zr2O7 multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (PL) from 46 to 101 W. Epitaxial (1 0 0) CeO2 films were prepared at PL = 46-93 W (deposition temperature, Tdep = 705-792 K). Epitaxial CeO2 films had rectangular-shaped grains at PL = 46-77 W (Tdep = 705-754 K), while square-shaped grains were obtained at PL = 85-93 W (Tdep = 769-792 K). CeO2 films showed a columnar microstructure. Epitaxial (1 0 0) CeO2 films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and ?-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO2 films had a maximum of 4.6 μm h−1 at PL = 77 W (Tdep = 754 K). 相似文献
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实验测量了自行研制的三明治电极结构化学气相沉积(CVD)金刚石薄膜探测器在室温下对241Am, 243Am 与244Cm α粒子的能谱响应,得到了其α粒子响应电荷收集效率随偏压的变化关系;获得了不同偏压下其相对平均电荷收集效率及响应谱下降沿10%处的相对电荷收集效率。结果表明:所研制的CVD金刚石薄膜探测器性能稳定,对α粒子响应的电荷收集效率随偏压的增加而趋于饱和,对α粒子平均电荷收集效率达33.5%,谱下降沿10%处的电荷收集效率达57%。 相似文献
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结合丝网印刷和过滤阴极真空电弧法、离子束溅射方法,在普通玻璃衬底上制备催化剂图案,采用低温热化学气相沉积法(CVD)生长碳纳米管/纤维(CNTs)薄膜.研究了不同种类催化剂对CNTs薄膜生长及其场发射的影响.结果表明,在a-C:Co,Ni-Cu和Cu三种催化剂上没有获得明显的CNTs,在外加电场小于4.4V/μm时没有观察到场发射;而在Ni-Fe及Ni-Cr两种催化剂上获得了大量的CNTs,并且表现出良好的场发射性能,开启电场为2.5V/μm,这种热CVD有简单、低温等优点,在CNTs场发射显示器的阴极制备中有潜在的应用价值. 相似文献
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基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫
关键词:
SiGe/Si异质结材料
化学气相淀积生长动力学模型
Grove理论
Fick第一定律 相似文献
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利用混合物理化学气相沉积法在6H-SiC(001)衬底上制备干净的MgB2超导超薄膜.在本底气体压强、载气氢气流量等条件一定的情况下,改变B2H6流量及沉积时间,制备得到不同厚度的系列MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率ρ(42K)、上临界磁场Hc2等与膜厚的关系.该系列超薄膜沿c轴外延生长,随膜厚度的变小,Tc(0)降低,ρ(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于厚度为7.5 nm的MgB2超薄膜,Tc(0) =32.8 K,ρ(42K) =118 μΩcm,是迄今为止所观测到的厚度为7.5 nm的MgB2超薄膜最高的Tc值;对于厚度为10 nm的MgB2膜,Tc(0)=35.5 K,ρ(42K)=17.7 μΩcm,上临界磁场μ0Hc2估算为12 T左右,零磁场、4 K时的临界电流密度Jc=1.0×107 A/cm2,是迄今为止10 nm厚MgB2超薄膜的最高Jc值,且其表面连接性良好,均方根粗糙度为0.731 nm.这预示MgB2超薄膜在超导纳米器件上具有广阔的应用前景.
关键词:
2超薄膜')" href="#">MgB2超薄膜
薄膜生长
氢气流量
混合物理化学气相沉积 相似文献