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宽带GaAsFET微波单片集成单刀双掷开关 总被引:1,自引:1,他引:0
本文报道了一种采用串、并联FETs结构的GaAsMMIC单刀双掷开关。芯片尺寸为0.97*1.23mm.在DC-10GHZ频率范围内,插入损耗小于2.2dB,隔离度大于32dB,反射损耗大于12dB,并关时间小于1ns,在5GHZ下的功率处理能力大于20dBm。此开关具有极低的直流功率耗散。 相似文献
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背面通孔是GaAsMMIC制造工艺中的一个重要步骤。通路孔在接地灵活性和减少接地电感方面比其它接地方法更具优越性[1] 。背面通孔的形貌和大小将会对后面的工艺产生很大的影响。因此 ,使用SEM对背面通孔工艺进行研究变得尤为重要。样品制备样品正面用高温蜡粘在蓝宝石衬底上 ,背面蒸30 0nm的镍 ,作为掩膜。背面通孔在PlasmaTherm790平板型RIE中进行 ,通孔结束后 ,背面金属化 ,背面电镀。将样品从通孔的中间位置切开 ,用双面胶带纸将样品粘在特制的样品台上。样品制作好后 ,选择 15kV高压 ,在不同放大倍数下 ,用… 相似文献
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简介了移动电话单片功率放大器的设计、制作,给出了电路拓扑和版图.该三级放大电路在800-900MHz内,小信号增益>35dB,饱和输出功率>32dBm,效率>34%。采用50mm全高于注入全平面干法工艺,均匀性、重复性好,工艺成品率高。 相似文献
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《固体电子学研究与进展》2000,(3)
Nanjing Electronic Devices Institute has fabricated Ga As MMICs for handset in mobilecommunication,include DPDTs,power amplifiers with switch,LNAs,and so on.TheMMICs operate at 90 0 MHz or 1 80 0 MHz,so the MMICs can be used in GSM handset orDCS1 80 0 handset.The DPDT can work on dual band.Front cover show the photo of thechip of power amplifiers with switch. Back cover show the photo of DPDTs. Typical specifi-cations are listed as follows:DPDT:Frequency/MHz:80 0~ 2 0 0 0… 相似文献
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GaAs MMIC MESFET混频器性能比较 总被引:1,自引:1,他引:0
给出了几种 Ga As MESFET单片混频器结构与芯片测试结果比较。实验表明 ,在相同本振功率激励下 Ga As MMIC双栅混频器具有良好变频特性 ,栅混频器指标次之 ,漏混频器结构最简单 ,但变频特性不如前两种。另外 ,单片巴仑双平衡混频器具有高的动态范围和宽频段工作特点。 相似文献
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<正>在微波功率发射系统中,为防止高灵敏接收机前置低噪声放大器(LNA)被发射的泄漏功率烧毁,需在前置低噪声放大器前面安置PIN二极管限幅器。通过控制PIN二极管的工作状态,在高功率的微波信号通过限幅器时,被衰减到较低的功率电平,而小功率微波信号则以较小的插损顺利通过。GaAsPIN二极管是实现单片限幅器的首选技术。GaAsPIN二极管在微波频段具有低的导通电阻,小的结电容,高击穿电压,易于集成等特点,因此采用GaAsPIN二极管的单片限幅器具有插损小、体积小、耐功率高等优点,受到广泛重视。南京电子器件研究所技术人员,基于现有的MOCVD材料生长技术和φ76mm砷化镓工艺线,成功开发了一套完整的砷化镓PIN管限幅器单片生产技术,其中包括GaAsPIN管的结构设计,GaAs限幅器的电路设计以及GaAs限幅器的工艺技术。已研制出的产品在各个频段带内具有低插损,承受功率大,泄漏电平低,无需外加偏置等优点。具体性能参数如表1所示。 相似文献
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An active image-rejection filter is presented in this paper, which applies actively coupled passive resonators. The filter has very low noise and high insertion gain, which may eliminate the use of a low-noise amplifier (LNA) in front-end applications. The GaAs monolithic-microwave integrated-circuit (MMIC) chip area is 3.3 mm2 . The filter has 12-dB insertion gain, 45-dB image rejection, 6.2-dB noise figure, and dissipates 4.3 mA from a 3-V supply. An MMIC mixer is also presented. The mixer applies two single-gate MESFETs on a 2.2-mm2 GaAs substrate. The mixer has 2.5-dB conversion gain and better than 8-dB single-sideband (SSB) noise figure with a current dissipation of 3.5 mA applying a single 5-V supply. The mixer exhibits very good local oscillator (LO)/RF and LO/IF isolation of better than 30 and 17 dB, respectively, Finally, the entire front-end, including the LNA, image rejection filter, and mixer functions is realized on a 5.7-mm 2 GaAs substrate. The front-end has a conversion gain of 15 dB and an image rejection of more than 53 dB with 0-dBm LO power. The SSB noise figure is better than 6.4 dB, The total power dissipation of the front-end is 33 mW. The MMIC's are applicable as a single-block LNA and image-rejection filter, mixer, and single-block front-end in digital European cordless telecommunications. With minor modifications, the MMIC's can be applied in other wireless communication systems working around 2 GHz, e.g., GSM-1800 and GSM-1900 相似文献
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Koizumi H. Noma A. Tanaka R. Kanazawa K. Ueda D. 《Solid-State Circuits, IEEE Journal of》1996,31(6):835-840
A GaAs MMIC chip-set applicable for various mobile communication systems has been developed. The chip-set consists of (1) low-noise amplifier (LNA) with diversity switching capability and (2) integrated mixer with an amplifier for local oscillator signal. The notable feature of these ICs is the dramatic reduction of pin counts and the improvement of high frequency characteristics due to on-chip ferroelectric bypass capacitors of barium strontium titanium (ϵr=300). These ICs can be mounted in a small mini-mold package with 6-pin counts 相似文献
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毫米波GaAs pin单刀单掷开关单片 总被引:1,自引:0,他引:1
采用GaAs pin二极管,完成了15~40GHz的单刀单掷开关单片的设计、制作.GaAs pin二极管SPST开关单片具有低插损、高隔离、高功率的特点,在15~20GHz带内插损0.6dB,驻波优于1.5,隔离度大于40dB;在20~40GHz带内插损小于1.1dB,驻波优于1.35,隔离度大于35dB.pin二极管SPST开关单片的1dB功率压缩点P-1大于2W.GaAs pin二极管开关单片采用MOCVD生长的GaAs 纵向pin二极管材料结构,76mm GaAs圆片工艺加工制作. 相似文献
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采用GaAs pin二极管,完成了15~40GHz的单刀单掷开关单片的设计、制作.GaAs pin二极管SPST开关单片具有低插损、高隔离、高功率的特点,在15~20GHz带内插损0.6dB,驻波优于1.5,隔离度大于40dB;在20~40GHz带内插损小于1.1dB,驻波优于1.35,隔离度大于35dB.pin二极管SPST开关单片的1dB功率压缩点P-1大于2W.GaAs pin二极管开关单片采用MOCVD生长的GaAs 纵向pin二极管材料结构,76mm GaAs圆片工艺加工制作. 相似文献
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数字衰减器在现代通信系统和电子设备中有着广泛的应用.GaAs MMIC数字衰减器由于其体积小、重量轻、低功耗、可靠性高、一致性好、抗辐射性能好等显著特点而更受欢迎.南京电子器件研究所业已研制出一种X波段GaAs MMIC数字衰减器,并获得优异电性能. 相似文献
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《固体电子学研究与进展》2000,(1)
Nanjing Electronic Devices Institute Ga As MMIC CAD Center has HP、 SUNworkstation systems with EDA softwares such as HP EEsof、CADENCE、COMPACT,andEM Simulators such as Ansoft、 IE3D. And it also has the Integrated DevicesCharacterization Analysis Program HP IC- CAP with a complete set of microwave on- wafettest system.With the capability of MMIC design,devices model extracting and librarybuilding,layout design and CAD software developing,the MMIC CAD Center hasun… 相似文献
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Kusamitsu H. Morishita Y. Maruhasi K. Ito M. Ohata K. 《Electronics Packaging Manufacturing, IEEE Transactions on》1999,22(1):23-28
The flip-chip bump interconnection structure has become popular for microwave and millimeter-wave package applications. This structure is expected to provide higher performance and a low cost packaging method. This paper presents the results of an evaluation of flip-chip assembled radio frequency (RF) devices. A coplaner transmission line type GaAs monolithic microwave integrated circuit (MMIC) was mounted on an aluminum oxide (Al2O3) substrate using the flip-chip thermal compression method. The electrical performance (S-parameter and noise figure) was measured and the reliability of the interconnection was tested. The changing rate of the characteristic impedance (Zo) of transmission line on bare-chip caused by bare-chip surface proximity to a substrate was simulated by finite element method (FEM) analysis. Flip-chip bonding conditions were fixed to keep the gap that less than 1% of Zo changing rate and sufficient bonding strength for reliability of interconnection. The DC characteristics of a 30 GHz, 60 GHz and 77 GHz band low noise amplifier (LNA) were the same before and after mounting, and the RF performance of the assembled MMIC was the same as the bare-chip without packaging. However, the influence of underfilling was observed. When epoxy resin was injected into the gap between the bare-chip and the substrate, the frequency band of the MMIC shifted to the low side. The reliability of the bump interconnection was excellent. The interconnection resistance did not change in a temperature cycle (-55°C to +125°C until 1500 cycle) test 相似文献
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《固体电子学研究与进展》2017,(5)
首先通过故障树的方式,分析了某6位数控衰减器衰减态翻转速度异常的失效模式和失效机理。把故障树的顶事件2dB衰减态翻转速度异常分为开关管ESD损伤、驱动信号异常、衰减电阻异常、控制端电阻异常4个子事件,经过分析得出翻转速度异常最大可能是由于控制端电阻过大引发RC延迟现象,进而导致关断或开启延迟故障。然后通过微光显微镜和激光感应阻抗变化率对故障件进行故障定位确定了故障点,为分析结果提供了依据。 相似文献
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Jeong-Geun Kim Dong-Hyun Baek Sanghoon Jeon Jae-Woo Park Songcheol Hong 《Microwave and Wireless Components Letters, IEEE》2003,13(11):478-480
A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/. 相似文献