绝缘氧化层上自离子注入Si薄膜W线发光性能的调控

对SOI基片上的Si薄膜进行了一系列Si⁺自注入和热退火的改性实验,并利用低温光致发光(PL)光谱对这些Si薄膜样品的发光性能进行了测试. 在这些SOI样品的PL光谱中观察到了丰富的光学结构,包括D₁,D₂,D₃,X以及异常尖锐的W线. 通过对比在同等光谱测试条件下的W线归一化强度,获得了针对SOI基片发射W线较为理想的自注入和热退火参数. 同时,还对D系列发光峰以及W线的缺陷起源和光学性质进行了很好的讨论. 关键词： SOI结构 自离子注入 W线 近红外发光器件     

金属有机化学气相沉积法制备钛酸铅铁电薄膜

利用低压ＭＯＣＶＤ工艺分别在（００１）取向的ＬａＡｌＯ_３，ＳｒＴｉＯ_３和重掺杂硅单晶衬底上制备ＰｂＴｉＯ_３铁电薄膜，并通过Ｘ射线衍射谱对薄膜的微结构进行分析．Ｘ射线θ－２θ扫描显示硅衬底上得到了ＰｂＴｉＯ_３多晶薄膜，另两种衬底上得到了择优取向的ＰｂＴｉＯ_３薄膜．ＬａＡｌＯ_３衬底上的ＰｂＴｉＯ_３薄膜有ａ和ｃ两个取向，也就是薄膜中存在着９０°畴结构，而生长在ＳｒＴｉＯ_３衬底上的ＰｂＴｉＯ_３薄膜中只存在ｃ方向的择优取向．由于薄膜的尺度效应，发现ｃ轴晶格常数与块材相比均缩短．Ｘ射线的φ扫描验证了后两类薄膜的外延特性，利用同步辐射的高强度和高能量分辨率用摇摆曲线方法研究了这两种外延薄膜的品质，进一步证明了ＳｒＴｉＯ_３衬底上的ＰｂＴｉＯ_３薄膜的单畴特性．利用重掺杂的硅衬底作底电极，测量显示直接生长于硅衬底上的ＰｂＴｉＯ_３多晶薄膜具有良好的铁电性能 关键词：     

高温退火处理下SiNx薄膜组成及键合结构变化

采用等离子增强化学气相沉积法, 以氨气和硅烷为反应气体, p型单晶硅为衬底, 低温下(200 ℃)制备了非化学计量比氮化硅(SiN_x)薄膜. 在N₂氛围中, 于500–1100 ℃范围内对薄膜进行热退火处理. 室温下分别使用Fourier变换红外吸收(FTIR)光谱技术和X射线光电子能谱(XPS)技术测量未退火以及退火处理后SiN_x薄膜的Si–N, Si–H, N–H键键合结构和Si 2p, N 1s电子结合能以及薄膜内N和Si原子含量比值R的变化. 详细讨论了不同温度退火处理下SiN_x薄膜的FTIR和XPS光谱演化同薄膜内Si, N, H原子间键合方式变化之间的关系. 通过分析FTIR和XPS光谱发现退火温度低于800 ℃时, SiN_x薄膜内Si–H和N–H键断裂后主要形成Si–N键; 当退火温度高于800 ℃时薄膜内Si–H和N–H键断裂利于N元素逸出和Si纳米粒子的形成; 当退火温度达到1100 ℃时N₂与SiN_x薄膜产生化学反应导致薄膜内N和Si原子含量比值R增加. 这些结果有助于控制高温下SiN_x薄膜可能产生的化学反应和优化SiN_x薄膜内的Si纳米粒子制备参数. 关键词： x薄膜')" href="#">SiN_x薄膜 Fourier变换红外吸收光谱 X射线光电子能谱 键合结构     

Fe-Si-Al合金结构的研究

本文叙述了利用电子显微镜对含10％Si和5％Al的Fe-Si-Al高导磁合金薄膜进行的结构研究。发现了基体为有序面心立方Fe₃(Al,Si)结构,其晶格参数为5.70±0.03?,该值在Fe₃Si和Fe₃Al晶格参数之间,说明部分Si原子为Al原子所置换。并获得三套基体和析出相合成的电子衍射图,相应确定了基体和析出相的取向关系:(001)_基‖(110)_相;[100]_基‖[00I]_相;[010]_基‖[I10]_相。对析出相的萃取碳复型,在电子显微镜中进行选区衍射,获得了立方Fe₃(Al,Si)C_x相的结构。提出:Fe原子占据面心;Al或Si原子占据顶角;C原子占据体心的看法。 关键词：     

低温氮化硅薄膜的介电性能研究

研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在5—10⁶Hz频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ω^n－1₁的关系，ｎ₁在0.82—0.88之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ω^n-1₂的关系，n₂在0 关键词：     

H2对Ar稀释SiH4等离子体CVD制备多晶硅薄膜的影响

以SiH₄，Ar和H₂为反应气体，采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现，反应气体中H₂的比例是影响薄膜结晶质量的重要因素，在适量的H₂比例下制备的多晶Si薄膜具有结晶相体积分数高，氢含量低，生长速率快、抗杂质污染等特性. 关键词： 低温多晶Si薄膜 等离子体CVD 4')" href="#">Ar稀释SiH₄ 2比例')" href="#">H₂比例     

ZnO退火条件对硫化法制备的ZnS薄膜特性的影响

采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后经过不同条件退火和在H22S气氛中硫化最终得到ZnS薄膜. 用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计 对ZnS薄膜样品进行了分析. 结果表明, ZnO薄膜硫化后的晶体结构和光学性质取决于它的退 火条件. 真空和纯O2₂中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS . 而在空气 和纯N2₂中退火的ZnO薄膜则全部转变为ZnS, 在可见光范围内的光透过率 关键词： ZnS薄膜 磁控溅射 ZnO硫化 太阳电池     

SiC外延层表面化学态的研究

用高分辨X射线光电子能谱仪(XPS)和傅里叶变换红外(FTIR)光谱仪研究了SiC外延层表面的组分结构. XPS宽扫描谱,红外掠反射吸收谱及红外镜面反射谱的解析结果说明SiC外延层表面是由Si—O—Si和Si—CH₂—Si聚合体构成的非晶SiC_xO_y:H. SiC外延层表面的化学态结构为Si(CH₂)₄,SiO(CH₂)₃,SiO₂(CH₃)₂,SiO₃(CH₃),Si—Si,游离H₂O,缔合OH,Si—OH,O和O₂. 根据化学态结构和元素电负性确定了化学态的各原子芯电子束缚能顺序,并与XPS窄扫描谱拟合结果相对比,建立了化学态与其束缚能的对应关系,进而用Si(CH₂)₄的实际C 1s束缚能值进行校正,确定了各化学态的束缚能. 结果发现,除了SiC_xO_y(x=1,2,3,4,x+y=4)的Si 2p束缚能彼此不同外,其C 1s和O 1s彼此也不相同,其中SiO₂(CH₃)₂和SiO₃(CH₃)的C 1s束缚能与CH_m和C—O中C 1s的相近,对此从化学态结构,元素电负性和邻位效应进行了解释. 关键词： SiC 化学态 XPS FTIR     

镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究

采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为2.40eV光致发光．系统地研究了不同退火温度对薄膜的Raman谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为1.86和2.30eV的发光带．Si2p能级光电子谱表明与发光强度一样Si⁴⁺强度随退火温度增加而增加．Si平均晶粒大小为4.1—8.0nm，不能用量子限制模型解释蓝绿光的发射．纳米晶硅与SiO₂界面或SiO₂中与氧有关的缺陷可能是蓝绿光发射的主要原因 关键词：     

多层溅射制备Wsix/Si薄膜的电阻率特性研究

利用多层溅射技术制备了ＷＳｉ_x／Ｓｉ薄膜，然后测量其平面电阻的退火行为，发现平面电阻在６００－７００℃之间退火后有陡降，这对应于非晶ＷＳｉ_x薄膜中Ｗ₅Ｓｉ₃四角相的形成。ｘ射线衍射和慢正电子湮没测量也证实了这一点。认为薄膜电阻率的突变反映了导电机制的变化，它和薄膜结构的变化有很好的对应关系。 关键词：     

Formation of L10-FeNi hard magnetic material from FeNi-based amorphous alloys

L1₀-FeNi hard magnetic alloy with coercivity reaching 861 Oe was synthesized through annealing Fe₄₂Ni_41.3Si₈B₄P₄Cu_0.7 amorphous alloy, and the L1₀-FeNi formation mechanism has been studied. It is found the L1₀-FeNi in annealed samples at 400 ℃ mainly originated from the residual amorphous phase during the second stage of crystallization which could take place over 60 ℃ lower than the measured onset temperature of the second stage with a 5 ℃/min heating rate. Annealing at 400 ℃ after fully crystallization still caused a slight increase of coercivity, which was probably contributed by the limited transformation from other high temperature crystalline phases towards L1₀ phase, or the removal of B from L1₀ lattice and improvement of the ordering quality of L1₀ phase due to the reduced temperature from 520 ℃ to 400 ℃. The first stage of crystallization has hardly direct contribution to L1₀-FeNi formation. Ab initio simulations show that the addition of Si or Co in L1₀-FeNi has the effect of enhancing the thermal stability of L1₀ phase without seriously deteriorating its magnetic hardness. The non-monotonic feature of direction dependent coercivity in ribbon segments resulted from the combination of domain wall pinning and demagnetization effects. The approaches of synthesizing L1₀-FeNi magnets by adding Si or Co and decreasing the onset crystallization temperature have been discussed in detail.     

极性晶体的表面或界面极化子

本文用动量和位置的线性组合作为算符,计算了极性晶体的表面或界面极化子的基态能量,结果表明,线性组合算符对于研究极性晶体的表面或界面极化子的性质也是适用的。 关键词：     

金刚石晶格上的对角无序与非对角无序非晶量子点

报道金刚石晶格上对角无序与非对角无序非晶量子点的理论研究，用简单的紧束缚哈密顿量描述模型的电子结构，用ｒｅｃｕｒｓｉｏｎ方法求解哈密顿方程，用边界条件对本征值的影响判断局域化，研究发现，带边为扩展态时，带宽的变化趋势与晶态量子点类似；带边为局域态时，尺寸超过某一临界长度后，带宽不变，但带边态密度随尺寸增大而增大。还研究了非晶量子点的介电函数虚部ε₂（?ω）。与扩展态对应的ε₂（?ω），对尺寸变化较敏感。与局域态对应的ε₂（?ω），当尺寸大于 关键词：     

As+注入硅的紫外-可见椭圆偏振光谱

本文采用椭圆偏振光谱法研究了剂量为1×10¹⁶—3×10¹²cm^-2的As⁺注入硅,及其在700℃退火后的光学性质。得出:当As⁺注入剂量增大到某一程度后,便呈非晶特性。低于临界剂量的样品,其n-λ,ε₂-λ关系曲线随剂量的增大而往下方移动,呈有规律变化;退火后,在大于4000?波段,n-λ与ε₂-λ曲线基本恢复到单晶硅状态。但在小于4000?的紫外区却未完全恢复,注入剂量越大,偏离单晶硅就越大。并指出,紫外光区是离子注入硅的信息敏感区;用有效质量模型计算出注入剂量与损伤度的关系。计算结果与实验符合得较好。 关键词：     

SiC formation on Si(100) via C60 precursors

The interaction between C₆₀ molecules and the Si(100) surface and the preparation of silicon-carbide thin films by thermal reaction of C₆₀ molecules with the Si(100) surface have been investigated using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, reflection high-energy electron diffraction and atomic force microscopy measurements. The effects of annealing temperature and C₆₀ coverage on the SiC formation will be discussed. It is found that the C₆₀ molecules bond covalently with silicon, and the number of bonds increase upon increasing the annealing temperature. Annealing at T≥830°C entails the formation of stoichiometric silicon carbide clusters that coalesce to form a continuous SiC layer when the C₆₀ coverage is greater than one monolayer. Deep pits acting as silicon diffusion channels are present with dimensions that increase with the amounts of C₆₀.

The interaction of C₆₀ with the SiC surface was also investigated. It is found that a similar covalent interaction is present in the two systems C₆₀/Si and C₆₀/SiC.     

纯铜[0 1 1]倾侧型非共格∑3晶界结构稳定性分子动力学模拟研究

有研究表明, 非共格∑₃晶界的行为在中低层错能面心立方金属晶界 特征分布演化中发挥着重要作用. 为了掌握不同界面匹配的非共格∑₃晶界的特性, 本文利用分子动力学(MD)模拟方法首先研究了纯铜的[0 1 1]倾侧型 非共格∑₃晶界在700–1100 K温度范围内和常压下的结构稳定性. MD模拟采用原子间相互作用长程经验多体势, 步长为5×10^-15 s. 模拟结果表明: 所研究的五个非共格∑₃晶界, 其结构稳定性存在很大差异, 其一般规律是, 与(1 1 1)/(1 1 1)共格孪晶界之间的夹角(Φ角)越小, 晶界匹配值越大, 则非共格∑₃晶界越稳定; 反之亦然. Φ角最小的 (2 5 5)/(2 1 1)非共格∑₃晶界较稳定, 在退火过程中几乎不发生变化. 随着Φ角的增大, 非共格∑₃晶界不再稳定, 这类晶界会通过Miller指数较高一侧晶体每三层原子面合并为一层原子面 (或Miller指数较低一侧晶体每一层原子面分解为三层原子面)的机理 转变为亚稳的“台阶”状晶界, 台阶面部分地处于精确的能量极低 的{111}/{111}共格孪晶界上; 当提高温度退火时, 这种“台阶”状晶界最终会全部转变成稳定平直的{111}/{111}共格孪晶界. 关键词： 纯铜 ∑₃晶界')" href="#">非共格∑₃晶界 分子动力学模拟     

Formation of luminescent (NH4)2SiF6 phase from vapour etching-based porous silicon

In this paper we describe the formation of a luminescent (NH₄)₂SiF₆ via porous silicon (PS) obtained from HNO₃/HF vapour etching (VE) silicon (Si) substrates. It was found that at specific conditions, PS transforms in a luminescent thick white powder (WP) layer. Scanning electron microscopy (SEM) revealed that the WP has a coral-like structure. It was also found that PS persists as an intermediate layer between the Si substrate and the WP, and seems to be the seed that transforms into the WP. SEM microanalysis show that the WP is essentially composed of silicon (Si), nitrogen (N) and fluorine (F). Fourier transform infrared (FTIR) spectroscopy investigations show that this WP contains SiF₆²⁻ and NH₄⁺ ions and N---H chemical bonds. X-ray diffraction (XRD) patterns of the WP confirm that a (NH₄)₂SiF₆ cubic phase is concerned. SEM microanalyses show an excess of Si in the WP matrix. FTIR spectroscopy and XRD analysis reveal the presence of crystalline Si particles and SiO_x, both originating from the excess of Si. The (NH₄)₂SiF₆ WP phase emits an intense photoluminescence (PL) band, shifted towards higher energies as compared to the starting PS layer. The possible origin and mechanism of the luminescence emission was discussed taking into account the ability of small SiO_x-surrounded Si particles to emit PL at rather high energy. The wide range variation of the thickness of the (NH₄)₂SiF₆ WP may be easily used for the grooving of Si wafers.     

Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption

D₂ temperature-programmed desorption (TPD) was used to probe the structure of the Si(011)-(16 × 2) surface. Deuterium was adsorbed at 200°C to coverages θ_D ranging up to complete saturation (approximately 1.1 ML) and the sample heated at 5°C s⁻¹. TPD spectra exhibited three second-order desorption peaks labelled β₂, β*₁ and β₁ centered at 430, 520 and 550°C. Of the proposed models for the Si(011)-(16 × 2) reconstruction, the present TPD results as a function of θ_D provide support for the adatom/dimer model with the β₂ peak assigned to D₂ desorption from the dihydride phase, while the β*₁ and β₁ peaks arise from adatom and surface-atom monohydride phases.     

Sol-Gel Derived Thin Films of LiTaO3 on SiO2/Si Substrates for Optical Waveguide Applications

Thin films of lithium tantalate have been derived on SiO₂/Si substrate by sol-gel method. The sol is prepared by mixing LiOC₂H₅ and Ta(OC₂H₅)₅. The film is deposited by spincoating and annealing at 600°C. The film is characterized by means of X-ray diffraction, atomic force microscopy,and the m-line technique.The experimental results show that the film has crystallized into the pure trigonal phase and it is microsopically continuous and uniform. The crystalline size ranges from about 33nm to 96nm. The refractive index of the film is measured to be 1.84 at the wavelength of 633nm and the film is found to support several guiding modes at this wavelength.     

Evolution of step-terrace structure at Si–SiO2 interface in SIMOX substrate during annealing

The step-terrace structures at the interface between the Si layer and the buried SiO₂ layer of a Separation by IMplanted OXygen substrate has been observed by using atomic force microscopy (AFM) after removing the SiO₂ and Si layers. The time evolution of the Si–SiO₂ interface roughness during high-temperature annealing was analyzed by the scaling analysis of AFM data. The correlation length exhibited a nice correspondence to the size of square domain structures. Decreasing in the index of the length scale indicates that the growth mechanism changes as the annealing proceeds.