Scanning spreading resistance microscopy of defect engineered low dose SIMOX samples

Modification of SiO₂ precipitate formation by defect engineering of SIMOX (separation by implanted oxygen) process was studied using cross section scanning spreading resistance microscopy (SSRM). Firstly, open volume defects, nanocavities, have been introduced by He⁺ ion implantation in the region, where SiO₂ precipitates were subsequently formed. Secondly, dual (simultaneous) oxygen (O⁺) and silicon (Si⁺) implantation was used to modify SiO₂ reaction kinetics too. The results show that the He-induced nanocavities enhance the SiO₂ formation presumably releasing excess strain associated with Si oxidation, while the use of a dual O⁺/Si⁺ beam do not influence significantly the oxidation kinetics in the initial state of the SIMOX process in our samples. Overall, SSRM was shown to be a suitable method for observation of the early stage of buried oxide formation in Si, since it measures the local resistivity, the main functional parameter of a SIMOX structure.     

Scanning probe microscope analysis of microstructures in optically variable devices

The fine-scale features of optically variable devices (OVDs) fabricated in resist by electron beam lithography have been examined using scanning probe microscopy (SPM). These features have included patterns of gratings, micro-text and geometrical images. Scanning probe microscopy has provided information on the groove angle, depth of profile and spatial frequency of the features as determined by the details of processing of the image. The OVD patterns formed in EBR-9 and X-AR-P 7400 resists exhibited a more rounded profile with a lower side-wall angle than in ZEP-7000 and PMMA resists.     

Use of C-SAM acoustical microscopy in package evaluations and failure analysis

Acoustical microscopy is gaining wide acceptance in the microelectronic packaging community. C-mode scanning acoustical microscopy, C-SAM, is widely used in package evaluations and for failure analysis. This paper discusses several specific topics. These include: (1) popcorn cracking in SMDs; (2) an evaluation of solder die attach in power packages; (3) an instance of top of die delamination which resulted in electrical failures; and (4) moisture sensitivity of other surface mount power packages and how it resulted in ball bond degradation during a new product qualification.     

Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices

Photon emission microscopy (PEM) is a technique used commonly for failure analysis of microelectronics chips. This technique has it limitations: it can only be used to indicate the place of the failure. In most cases, this is not enough to allow a definition of the failure, i.e. to find out whether it is due to a gate oxide breakdown, a metal short, a junction spiking, etc. In this paper spectral PEM is discussed. It is shown that the spectrum of the light emitted by the failure may offer valuable information about the identity of the failure.     

Nonlinear electro-thermal modeling and field-simulation of OLEDs for lighting applications II: Luminosity and failure analysis

In recent years great effort has been put into development of lighting purpose Organic Light Emitting Diodes (OLEDs) worldwide. Among many concerns of developers is heat-removal from the thin film structure of the active layers of OLEDs which are typically realized on low thermal conductivity substrates such as glass or polymer foils. The other issue is to provide the OLEDs with transparent, yet high electrical conductivity electric power supply structure, therefore metallic shunting grids are added to the layer stack of OLEDs. These two major issues necessitate self-consistent electro-thermal simulation of large area OLEDs in which the temperature dependent I–V characteristics of the light emitting polymer layers are also considered. Our first article discussed the details of the algorithmic fundamentals of our nonlinear electro-thermal field solver. This second paper presents the new, temperature dependent radiance and luminance distribution map calculation extension of the algorithm. Using this feature the inhomogeneity of large area OLEDs in free convection environment can be estimated; such calculations for glass-based research OLED samples are also presented. Because of the operational degradation of the OLED, non-emissive “dark” spots can appear. Cause of these spots can be e.g. manufacturing problem, damage of the surface protection, etc. Electro-thermal and luminance simulation of this failure type is demonstrated and is compared with measured results. Thermal runaway as the possible physical phenomenon behind the appearances of dark spots is proved by simulations.     

The role of failure analysis in establishing design rules for reliable plastic products

Plastic products can fail in a large variety of modes because of errors in the design, processing and application. The designer must take into account these errors in order to prevent these errors rather than notice them.Without having knowledge of the complex mechanical behaviour of plastics and the structure related properties, adequate design of reliable products is impossible. The designer must also be aware of the specific failure modes, failure causes and failure mechanisms and he can achieve this by failure analysis. Important information from analyses of failed products is the handling of users in ways not foreseen by him. A classification of failed plastic products based on failure causes and failure mechanisms is presented and should be used in carrying out Failure Modes and Effects Analysis.     

Location of current carrying failure sites in integrated circuits by magnetic force microscopy at large probe-to-sample separation

In integrated circuit failure analysis excessive current flow is often used to indicate the presence of faulty devices. By imaging the magnetic field produced by current flowing in integrated circuit conductors, these faulty devices can be located. Fault location by magnetic field imaging can be problematic as the devices are often buried under several layers of dielectrics and conductors that are up to several microns thick. In this paper we present a new technique for fault location based on magnetic force imaging of the magnetic field. By subtracting magnetic force images acquired at different probe-to-sample distances, the effects due to background, and probe geometry can be eliminated. We demonstrate that this method is capable of locating current carrying failure sites in model circuits with sub-micrometer uncertainty. We show how the technique can be used to map current paths in the presence of interfering currents on power supply and ground lines.     

环扫电镜表征影响因素及芯片失效分析应用

对环境扫描电镜(ESEM)表征影响因素进行试验研究,根据半导体芯片的结构,进行成像参数优化,试验结果表明较为适合的优化参数为:腔室气压40Pa~80Pa,加速电压10kV~20kV.研究了裙散效应对能谱分析的影响,结果表明非分析区域元素含量与离能谱分析点的距离呈幂函数衰减,应证了文献报道的理论计算,对于能谱分析排除干扰元素有一定的参考意义.针对破坏性物理分析(DPA)试验中发现的塑封器件腐蚀缺陷,利用ESEM在优化参数下进行机理分析,结果表明玻璃钝化层裂纹是导致铝金属条被腐蚀的原因,而玻璃钝化层裂纹是由于器件材料性质不匹配,在热载荷条件下产生热应力而引起.这种表层缺陷极有可能因为镀膜而被掩盖,因此,利用ESEM检测半导体器件具有一定的必要性.     

An analytical model for punch-through limited breakdown voltage of planar junction with multiple floating field limiting rings

An appropriate model for punch-through (PT) limited breakdown voltage of a planar junction is presented for the first time as a function of the normalized epitaxial layer thickness and the critical depletion width of the cylindrical junction at breakdown in non-PT case. The results are applied to the planar junction structure with a single ring, taking into account three different breakdown modes. The problem of the multiple ring structure is solved using the equivalent ring method, which allows determination of the PT limited breakdown voltage and optimized ring spacings for the structure. Comparisons with two-dimensional device simulations using MEDICI show a good agreement.     

透射电镜微观组织图像处理定量分析系统设计

本文基于LabVIEW的图像处理与可视化编程分析模块,建立微观形貌目标测量和微观组织定量分析系统,以拓展软件功能和提高测试分析效率.对于方形和圆形微孔组织形貌像进行灰度变换,对阈值分割图像进行边缘检测和轮廓提取,利用卡钳测量模块对方格尺寸和圆孔直径进行测量并与标准值进行比对,测量误差均在允许误差范围内,证明图像处理与分...     

The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics

This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N ultra-thin (1 and 2 nm) films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. The current flow mechanism was analyzed on the basis of pre-breakdown, soft-breakdown and post-breakdown current-voltage (J-V) experiments. Based on α-V analysis (α=d[ln(J)]/d[ln(V)]) of the J-V characteristics, a non-ideal Schottky diode-like current mechanism with different parameters in various ranges of J-V characteristics is established, which limits the current flow in these structures independent of irradiation dose or magnitude of applied voltage during stress.     

Queuing analysis of cooperative GBN-ARQ in wireless networks with peers contending for a common helper

This paper presents a new queuing model for performance analysis of go-back-N automatic repeat request (GBN-ARQ) protocol in cooperative wireless networks. In the model, cooperative medium access control (CoopMAC) protocol and dynamic radio link adaptation are taken into consideration. We analyze the probability distribution of the total delay witnessed by packets at the source side. Multi-rate transmissions are considered for all links with link adaptation. An enhanced Markov model is introduced in our model, which encompasses the following aspects: CoopMAC protocol at the MAC sub-layer; GBN-ARQ protocol at the logical link control sub-layer and the transmission using decode-and-forward cooperative diversity at the physical layer. The stochastic process of random feedback delay because of peers contending for a common helper is analyzed. The queuing system is modeled as a GI/M/1 Markov chain to acquire statistics of the exact queue length and the total delay. We analyze the effects of Doppler frequency shift and packet arrival rate on the total delay. The analysis is validated by simulation.     

基于队列理论CSMA/CA机制的无线传感器异构机制OSTS的实时性分析

自从IEEE 802.15.4标准发布以来,基于低功耗、低速率传输的无线传感器网络的应用几乎涉及到现实生活的方方面面;但是关于这个标准的CSMA/CA机制大部分都是基于均匀、饱和的传感器网络应用。文中针对非饱和、带缓存的无线传感器异构网络,提出了一种新的异构的CSMA/CA机制OSTS。该机制采用2个马尔可夫链来分别表示异构节点访问信道的过程、一个宏观马尔可夫链来表达信道状态转移,且结合M/G/1/K队列理论分析数据包传送的实时性能,并相应地改进系统的实时性。文中最大的特点是两组非均匀节点被赋予了公平的机会访问信道,而不存在优先权的问题。此外,详细分析了这种机制的数据包传送时间,包括数据包到达率、包大小、节点数量、缓存大小等参数对系统实时性的影响;这些分析结果与我们采用NS-2工具仿真的结果十分吻合。     

Electrochemical analysis of dye adsorption on aligned carbon nanofiber arrays coated with TiO2 nanoneedles for dye-sensitized solar cell

An electrochemical method has been developed to analyze dye absorption on the aligned carbon nanofiber arrays coated with TiO2 nanoneedles for dyesensitized solar cell. The unique nanostructure with the roughness factor of 90.6 provides a large effective surface area for dye adsorption. The experimental results showed that the dye molecules cover 39.7% of the TiO2 surface area which influences the performance of dye-sensitized solar cell. The electrochemical method provides the information of the coverage of dye molecules which is a key issue to optimize solar cell performance.     

高斯反射平凹二维腔横模选择特性的有限阶矩阵分析

本文利用自再现理论,将高斯反射二维腔的衍射积分析方程转化为有限阶国方程,对高斯反射平凹二维腔的横模选择特性进行数值分析,研究结果表明,高斯反射平凹二维腔选横模的性能优越,可应用于大功率激光器,从而为激光材料表面处理提供优质的激光光束。