A Feasible Approach to Optical--Electrical Hybrid Data Storage Using Phase Change Material

We present our experimental results supporting optical-electrical hybrid data storage by optical recording and electrical reading using Ge2Sb2Te5as recording medium. The sheet resistance of laser-irradiated Ge2Sb2 Te5 films exhibits an abrupt change of four orders of magnitude （from 107 to 10^3 Ω/sq） with increasing laser power, current-voltage curves of the amorphous area and the laser-crystallized dots, measured by a conductive atomic force microscope （C-AFM）, show that their resistivities are 2. 725 and 3.375 × 10^-3 Ω, respectively, the surface current distribution in the films also shows high and low resistance states. All these results suggest that the laser-recorded bit can be read electrically by measuring the change of electrical resistivity, thus making opticalelectrical hybrid data storage possible.     

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge1Sb4Te7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy （CAFM）. This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude.     

Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate

La_0.8Sr_0.2AlO₃ (LSAO) thin films are grown on SrTiO₃ (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.     

A New Method for Determination of Sublimation Energy

Sublimation energy is the latent heat of phase transition from sohd state directly to gas state, but it is difficult to measure experimentally. We propose a new method to determine the sublimation energy of materials by using the experimental data of blow-off impulse induced by electron beam and the computer program DRAM. With th＆ new method, the sublimation energy of polyester is finally determined to be about 1.1 k Jig.     

Time-Resolved Photoluminescence Spectroscopy： A Novel Technique for Determination of Luminescence of Quantum Dots

The time-resolved photoluminescence （PL） spectroscopy measured by the gradually increasing start delay time is utilized as a tool for the determination of the luminescence of quantmn dots （QDs）. The luminescence evolution of self-assembled CdSe QDs during the luminescence decay is fully revealed in terms of the experiment technique. The characteristic narrow luminescence lines of self-assembled CdSe QDs are obtained with increasing start delay time.     

Effect of Density and Surface Roughness on Optical Properties of Silicon Carbide Optical Components

The effect of density and surface roughness on the optical properties of silicon carbide optical components is investigated. The density is the major factor of the total reflectance while the surface roughness is the major factor of the diffuse reflectance. The specular reflectance of silicon carbide optical components can be improved by increasing the density and decreasing the surface roughness, in the form of reducing bulk absorption and surface-related scattering, respectively. The contribution of the surface roughness to the specular reflectance is much greater than that of the density. When the rms surface roughness decreases to 2.228nm, the specular reflectance decreases to less than 0. 7% accordingly.     

Capacitance of Organic Schottky Diodes Based on Copper Phthalocyanine （CuPc）

The capacitance of an organic Schottky diode based on copper phthalocyanine （CuPc） is investigated. Based on the organic small-signal equivalent model established, we calculate the reverse capacitance CMetal Of the organic Schottky diode with different kinds of metal cathodes （Mg, Al, Au）. It is found that the reverse capacitance of the organic Schottky diode shows behavior as CMg 〉 CAl 〉 CAu at the same frequency, and according to our analysis, the reverse Schottky junction capacitance Cj is expected to have little effect on the reverse capacitance of the organic Schottky diode, and the space-charge limited current capacitance Us is considered to dominate the reverse capacitance, which limits the improvement of frequency characteristics of organic Schottky diodes.     

Fabrication of a Mono-Domain Alignment Ferroelectric Liquid Crystal Device Using a Polar Self-Assembled Monolayer

A mono-domain ferroelectric liquid crystal device (FLCD) is fabricated using a novel method. The cell used in this method is an asymmetric cell, typically the combination of a polar self-assembled monolayer (SAM) for one substrate and a rubbed polyimide for the other substrate. A defect-free alignment of ferroelectric liquid crystal is fabricated without applying a dc voltage to remove degeneracy in the layer structure. The contact angles of self-assembled monolayer and PI-2942 are measured and the polarity of SAM is higher than the PI alignment. It is found that the polarity of self-assembled monolayer is a key factor in the formation of mono-domain alignment of FLC.     

Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings

We present a comprehensive experimental study of terahertz （THz） wave propagation utilizing surface plasmon polaritons （SPPs） on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices.     

High-Sensitivity Sensor Based on Surface Plasmon Resonance Enhanced Lateral Optical Beam Displacements

We present a new optical sensor based on surface plasmon resonance （SPIt） enhanced lateral optical beam displacements. Compared with the traditional SPIt methods, the new method provides higher sensitivity to the sensor system. Theoretical simulations show that the refractive index （RI） detection sensitivity of the SPR sensor based on the displacement measurement has a strong dependence on the thickness of the metal film. When the optimal thickness of the metal film is selected, the RI resolutlon of the SPIt sensor is predicted to be 2.2 × 10^-7 refractive index units （RIU）. Furthermore, it is found that the incidence angle can be used as a parameter to adjust the operating range of the sensor to different refractive index ranges.     

Measurement of Density Inhomogeneity for Source Masses in Time-of-Swing Method of Measuring

A method with scanning electron microscopy (SEM) is presented to measure the density inhomogeneity of the stainless steel (SS316) sphere prepared for measuring G using time-of-swing method. The experimental result shows that the relative density inhomogeneity of the sphere is better than 5.9×10^-4 over the volume of 0.272×0.234×0.005mm³. If we assume that the density inhomogeneity of the spheres used in our G measurement is the same as that of the sphere destroyed in testing, it will contribute to G value with an uncertainty of less than 0.034ppm in our G measurement. Furthermore, the mass centre offset from the geometric centre of the sphere will be less than 4.3×10-4,μm due to this inhomogeneity.     

Effect of TiO2 Nanotubes on Polymer-Fullerene Bulk Heterojunction Solar Cells

We investigate the photovoltaic properties of hybrid organ/c solar cell based on the blend of poly[2-methoxy-5-（2- ethylhexoxy-l,4-phenylenevinylene） （MEH-PPV）, C60 and titanium dioxide （TiO2） nanotubes. In comparison of the composite devices with different TiO2：[MEH-PPV ＋C60] weight ratios of lw$.% （D1-1）, 2wt.% （D1-2）, 3wt.% （D1-3）, 5wt.% （D1-4）, 10wt.% （D1-5） and 20wt.% （D1-6）, it is found that the device Dl-a exhibits the best performance. The conversion efficiency is improved by a factor of 3 compared with the MEH-PPV：C60 device.     

High Speed and Ultra-Low-Power Phase Change Line Cell Memory Based on SiSb Thin Films with Nanoscale Gap of Electrodes Less Than 100nm

Si16Sbs4-based line cell phase change random access memory （PCRAM）, in which the Si16Sbs4 phase change line is contacted by TiN electrodes with a nanoscale gap, is fabricated by electron beam lithography. The lowest current and measured pulse width for RESET operation are 115 μA and 18 ns, respectively. The measured shortest pulse width for recrystallization is 110ns, with applied pulse amplitude of 1.5 V. SET and RESET currents for line cells with different line lengths are determined. Endurance of 106 cycles with a resistance ratio of above 800 has been achieved.     

A Novel Filter Scheme of Data Processing for SQUID-Based Magnetocardiogram

We present a new filter scheme for magnetocardiogram （MCG） signal processing based on the quasi-periodic characteristic of the signals. The key points of this scheme are to determine the exact numbers of data points in each cardiac cycle by using electrocardiogram （ECG） data acquired simultaneously with the MCG signal and to normalize the MCG data sequence in each cycle into an identical length. Compared with conventional filters, the scheme has the advantage of more powerful noise suppression with less signal distortion. The desire for having high quality output signals from raw MCG data acquired in a simple shielded room or even in unshielded environment may be realized with the scheme.     

Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

Hydrogen ions are implanted into Pb（Zro.3Tio.7）03 1014 ions/cm^2. Pseudo-antiferroelectric behaviour in thin films at the energy of 40keV with a flux of 5 x the implanted thin films is observed, as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves. X-ray diffrac- tion patterns show the film structures before and after H＋ implantation both to be perovskite of a tetragonal symmetry. These findings indicate that hydrogen ions exist as stable dopants within the films. It is believed that the dopants change domain-switching behaviour via the boundary charge compensation. Meanwhile, time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage cur- rent nearly in one order for the implanted film, but the current at time shorter than i s is mostly the same as that of the original film without the ionic implantation. The artificial tailoring of the antiferroelectric behaviour through H＋ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.     

Study of defects in proton irradiated GaAs/AlGaAs solar cells

The properties of GaAs/AlGaAs solar cells irradiated with 40, 70, 100 and 170 keV protons have been studied. Current-voltage (IV) measurement showed that the worst degradation was found in the cells irradiated by 100 keV protons. The degradation was found defect dependent. Defect profile was obtained by the stopping and range of ions in matter (SRIM) simulation and deep-level transient spectroscopy (DLTS) measurement. In order to obtain the deep-level defect profile in depletion layer by DLTS measurement, the traditional calculation formula of defect concentration has been modified. DLTS measurement showed good agreement with that of the SRIM simulation.     

Study on the mechanisms of photoinduced carriers separation and recombination for Fe-TiO2 photocatalysts

The iron(III)-ion doped TiO₂ (Fe³⁺-TiO₂) with different doping Fe³⁺ content were prepared via a sol-gel method. The as-prepared Fe³⁺-TiO₂ nanoparticles were investigated by means of surface photovoltage spectroscopy (SPS), field-induced surface photovoltage spectroscopy (FISPS), and the photoelectrochemical properties of Fe³⁺-TiO₂ catalysts with different Fe³⁺ content are performed by electrical impedance spectroscopy (EIS) as well as photocatalytic degradation of RhB are studied under illuminating. Based on the experiment results, the mechanism of photoinduced carriers separation and recombination of Fe³⁺-TiO₂ was revealed: that is, the Fe³⁺ captures the photoinduced electrons, inhibiting the recombination of photoinduced electron-hole pairs, this favors to the photocatalytic reaction at low doping concentration (Fe/Ti ≤ 0.03 mol%); while Fe³⁺ dopant content exceeds 0.03 mol%, Fe₂O₃ became the recombination centers of photoinduced electrons and holes because of that the interaction of Fe₂O₃ with TiO₂ leads to that the photoinduced electrons and holes of TiO₂ transfer to Fe₂O₃ and recombine quickly, which is unfavorable to the photocatalytic reaction.     

Investigation of the Imaging Polarization Effect Based on a Pixellated CdZnTe Detector

A pixel array CdZnTe imaging system, employing a 40 × 40× 5 mm^3 pixellated CdZnTe detector, is established. The imaging polarization effect in the CdZnTe pixellated detector for a collimated CS137 Gamma source is investigated in detail. The experimental results for different irradiated fluxes indicate that excessive irradiated flux indeed causes central pixels to be shut off completely. The imaging performance of the polarized detector is severely degraded. Polarized detector counts are simultaneously reduced to one-third of the non-polarized detector counts. A theoretical model of potential distribution is also proposed by solving the Poisson equation and, in turn, the electric potential distortion for high irradiated flux is discussed by comparison with the experimental results.     

A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode

We report a resonant tunnelling diode （RTD） small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage （I-V） characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.     

Ultra-Narrow Dual-Channel Filter Based on Symmetrical Sampled Fibre Bragg Grating

A kind of ultra-narrow dual-channel filter is proposed in principle and demonstrated experimentally. This filter is designed by means of two sampled fibre Bragg gratings （SFBGs）, where one is periodic O-π sampling and the other is symmetrical spatial sampling. The former can create two stopbands in the transmission spectra and the latter can produce two ultra-narrow passbands. Our filter has the 3-dB bandwidth of about 1 pm, whose value is two orders of magnitude less than the bandwidth of the traditional SFBG filters. The proposed filter has a merit that the channel spacing remains unchanged when tuning the filter.