Syntheses, structure, and selected physical properties of CsLnMnSe3 (Ln = Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Y) and AYbZnQ3 (A = Rb, Cs; Q = S, Se, Te)

CsLnMnSe(3) (Ln = Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Y) and AYbZnQ(3) (A = Rb, Cs; Q = S, Se, Te) have been synthesized from solid-state reactions at temperatures in excess 1173 K. These isostructural materials crystallize in the layered KZrCuS(3) structure type in the orthorhombic space group Cmcm. The structure is composed of LnQ(6) octahedra and MQ(4) tetrahedra that share edges to form [LnMQ(3)] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing AQ(8) bicapped trigonal prisms. There are no Q-Q bonds in the structure of the ALnMQ(3) compounds so the formal oxidation states of A/Ln/M/Q are 1+/3+/2+/2-. The CsLnMnSe(3) materials, with the exception of CsYbMnSe(3), are Curie-Weiss paramagnets between 5 and 300 K. The magnetic susceptibility data for CsYbZnS(3), RbYbZnSe(3), and CsYbMSe(3) (M = Mn, Zn) show a weak cusp at approximately 10 K and pronounced differences between field-cooled and zero-field-cooled data. However, CsYbZnSe(3) is not an antiferromagnet because a neutron diffraction study indicates that CsYbZnSe(3) shows neither long-range magnetic ordering nor a phase change between 4 and 295 K. Nor is the compound a spin glass because the transition at 10 K does not depend on ac frequency. The optical band gaps of the (010) and (001) crystal faces for CsYbMnSe(3) are 1.60 and 1.59 eV, respectively; the optical band of the (010) crystal faces for CsYbZnS(3) and RbYbZnSe(3) are 2.61 and 2.07 eV, respectively.     

New layered materials: syntheses, structures, and optical and magnetic properties of CsGdZnSe3, CsZrCuSe3, CsUCuSe3, and BaGdCuSe3

Four new quaternary selenides CsGdZnSe3, CsZrCuSe3, CsUCuSe3, and BaGdCuSe3 have been synthesized with the use of traditional high-temperature solid-state experimental methods. These compounds are isostructural with KZrCuS3, crystallizing with four formula units in the orthorhombic space group Cmcm. Cell constants (A) at 153 K are CsGdZnSe3 4.1684(7), 15.765(3), 11.0089(18); CsZrCuSe3 3.903(2), 15.841(10), 10.215(6); CsUCuSe3 4.1443(7), 15.786(3), 10.7188(18); and BaGdCuSe3 4.1839(6), 13.8935(19), 10.6692(15). The structure of these ALnMSe3 compounds (A = Cs, Ba; Ln = Zr, Gd, U; M = Cu, Zn) is composed of 2 to infinity [LnMSe3(n-)] (n = 1, 2) layers separated by A atoms. The Ln atom is octahedrally coordinated to six Se atoms, the M atom is tetrahedrally coordinated to four Se atoms, and the A atom is coordinated to a bicapped trigonal prism of eight Se atoms. Because there are no Se-Se bonds in the structure, the oxidation state of A is 1+ (Cs) or 2+ (Ba), that of Ln is 3+ (Gd) or 4+ (Zr, U), and that of M is 1+ (Cu) or 2+ (Zn). CsGdZnSe3 and BaGdCuSe3, which are paramagnetic, obey the Curie-Weiss law and have effective magnetic moments of 7.87(6) and 7.85(5) muB for Gd(3+), in good agreement with the theoretical value of 7.94 muB. Optical transitions at 1.88 and 2.92 eV for CsGdZnSe3 and 1.96 eV for BaGdCuSe3 were deduced from diffuse reflectance spectra.     

The CsLnMSe3 semiconductors (Ln = rare-earth element,Y; M = Zn,Cd, Hg)

CsLnCdSe(3) (Ln = Ce, Pr, Sm, Gd, Tb, Dy, Y) and CsLnHgSe(3) (Ln = La, Ce, Pr, Nd, Sm, Gd, Y) have been synthesized at 1123 K. These isostructural materials crystallize in the layered KZrCuS(3) structure type in the orthorhombic space group Cmcm and are group X extensions of the previously characterized Zn compounds. The structure is composed of two-dimensional [LnMSe(3)] layers that stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsSe(8) bicapped trigonal prisms. Because there are no Se-Se bonds in the structure of CsLnMSe(3) (M = Zn, Cd, Hg), the formal oxidation states of Cs/Ln/M/Se are 1+/3+/2+/2-. CsSmHgSe(3) does not adhere to the Curie-Weiss law, whereas CsCeHgSe(3) and CsGdHgSe(3) are Curie-Weiss paramagnets with micro (eff) values of 2.77 and 7.90 micro (B), corresponding well with the theoretical values of 2.54 and 7.94 micro (B) for Ce(3+) and Gd(3+), respectively. Single-crystal optical absorption measurements were performed with polarized light perpendicular to the (010) and (001) crystal faces of these materials. The band gaps of the (010) crystal faces range from 1.94 eV (CsCeHgSe(3)) to 2.58 eV (CsYCdSe(3)) whereas those of the (001) crystal faces span the range 2.37 eV (CsSmHgSe(3)) to 2.54 eV (CsYCdSe(3) and CsYHgSe(3)). The largest band gap variation between crystal faces is 0.06 eV for CsYCdSe(3). Theoretical calculations for CsYMSe(3) indicate that these materials are direct band gap semiconductors whose colors and optical band gaps are dependent upon the orbitals of Y, M, and Se.     

Synthesis, structure, and optical properties of the quaternary seleno-gallates NaLnGa4Se8 (Ln = La, Ce, Nd) and their comparison with the isostructural thio-gallates

Three new quaternary seleno-gallates containing rare-earth metals and sodium cations, have been synthesized by a solid-state route in evacuated quartz ampoules: Na LnGa 4Se 8 ( Ln = La( I), Ce ( II) and Nd ( III)). The synthesis involved the stoichiometric combination of sodium polyselenides, rare-earth metal, Ga 2Se 3, and Se or elemental Ga in place of Ga 2Se 3. Single-crystal structure analysis indicated that the compounds are isostructural to the thio-analogue, NaNdGa 4S 8. The structures of I- III are described in terms of layers of GaSe 4 tetrahedra joined by corner- and edge-sharing; the alkali-metal cations and the trivalent rare-earth metal cations occupy square antiprismatic sites between the layers. The optical properties of the compounds have been investigated and compared with the isostructural thio-gallate. The band gap of I was located around 2.65 eV. The band gaps of II and III were 2.66 and 2.73 eV, respectively, considerably narrower than their thio-analogues ( approximately 3.4 eV). The contraction of the band gap was attributed to the shift of the valence band to higher energy due to the involvement of higher energy (4p) Se orbitals. The 4f --> 5d gap of II is found to be located around 2.32 eV, which is 0.26 eV narrower than the thio-analogue is due to a greater dispersion of the Ln-(5d) band caused by more covalent Ce-Se bonds as well as rising of the f level energy.     

Syntheses, structure, some band gaps, and electronic structures of CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y)

Eleven new quaternary rare-earth tellurides, CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Y), were prepared from solid-state reactions at 1123 K. These isostructural materials crystallize in the layered KZrCuS3 structure type in the orthorhombic space group Cmcm. The structure is composed of LnTe6 octahedra and ZnTe4 tetrahedra that share edges to form [LnZnTe3] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsTe8 bicapped trigonal prisms. There are no Te-Te bonds in the structure of these CsLnZnTe3 compounds so the formal oxidation states of Cs/Ln/Zn/Te are 1+/3+/2+/2-. Optical band gaps of 2.13 eV for CsGdZnTe3 and 2.12 eV for CsTbZnTe3 were deduced from single-crystal optical absorption measurements. A first-principles calculation of the density of states and the frequency-dependent optical properties was performed on CsGdZnTe3. The calculated band gap of 2.1 eV is in good agreement with the experimental value. A quadratic fit for the lanthanide contraction of the Ln-Te distance is superior to a linear one if the closed-shell atom is included.     

Direct solvothermal growth, crystal structures, and optical properties of one-dimensional lanthanide selenidoarsenate(v) polymers [Ln(dien)2(micro3-AsSe4)] (Ln = Nd, Sm): the first example of an AsSe4(3-) anion acting as a ligand to a lanthanide complex

Two novel lanthanide selenidoarsenates(v) [Ln(dien)2(micro(3)-AsSe(4))] (Ln = Nd 1, Sm 2, dien = diethylenetriamine) were synthesized by the reactions of As(2)O(3) and Se with Nd(2)O(3) or Sm(2)O(3) in dien under solvothermal conditions. 1 and 2 are in the orthorhombic crystal system with Iba2 and Pbca space groups, respectively. The [AsSe(4)](3-) anion acts as a tridentate micro(3)-AsSe(4) ligand to bridge the lanthanide [Ln(dien)2](3+) complexes leading to one-dimensional neutral [Ln(dien)(2)(micro(3)-AsSe(4))](infinity) chains. The chains contact through hydrogen bonding to form network structures. The lanthanide center lies within a nine-coordinated environment involving six N atoms of two dien ligands and three Se atoms of two different tetrahedral [AsSe(4)](3-) anions forming a distorted monocapped square antiprism. The novel coordination polymers [Nd(dien)2(micro(3)-AsSe(4))](infinity) and [Sm(dien)2(micro(3)-AsSe(4))](infinity) are the first examples of solvothermally synthesized selenidoarsenates with [AsSe(4)](3-) anion acting as a ligand in lanthanide complexes. The band gaps of 2.11 eV for 1, and 2.18 eV for 2 have been derived from optical absorption spectra. TG-DSC curves show that two compounds remove coordinated dien ligands in a single step.     

New layered materials: syntheses, structures, and optical properties of K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiaAg(2)S(4), Cs(2)TiAg(2)sS(4), and Cs(2)TiCu(2)Se(4)

The new compounds K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiAg(2)S(4), Cs(2)TiAg(2)S(4), and Cs(2)TiCu(2)Se(4) have been synthesized by the reactions of A(2)Q(3) (A = K, Rb, Cs; Q = S, Se) with Ti, M (M = Cu or Ag), and Q at 823 K. The compounds Rb(2)TiCu(2)S(4), Cs(2)TiAg(2)S(4), and Cs(2)TiCu(2)Se(4) are isostructural. They crystallize with two formula units in space group P4(2)/mcm of the tetragonal system in cells of dimensions a = 5.6046(4) A, c = 13.154(1) A for Rb(2)TiCu(2)S(4), a =6.024(1) A, c = 13.566(4) A for Cs(2)TiAg(2)S(4), and a =5.852(2) A, c =14.234(5) A for Cs(2)TiCu(2)Se(4) at 153 K. Their structure is closely related to that of Cs(2)ZrAg(2)Te(4) and comprises [TiM(2)Q(4)(2)(-)] layers, which are separated by alkali metal atoms. The [TiM(2)Q(4)(2)(-)] layer is anti-fluorite-like with both Ti and M atoms tetrahedrally coordinated to Q atoms. Tetrahedral coordination of Ti(4+) is rare in the solid state. On the basis of unit cell and space group determinations, the compounds K(2)TiCu(2)S(4) and Rb(2)TiAg(2)S(4) are isostructural with the above compounds. The band gaps of K(2)TiCu(2)S(4), Rb(2)TiCu(2)S(4), Rb(2)TiAg(2)S(4), and Cs(2)TiAg(2)S(4) are 2.04, 2.19, 2.33, and 2.44 eV, respectively, as derived from optical measurements. From band-structure calculations, the optical absorption for an A(2)TiM(2)Q(4) compound is assigned to a transition from an M d and Q p valence band (HOMO) to a Ti 3d conduction band.     

Syntheses, structures, magnetism, and optical properties of lutetium-based interlanthanide selenides

Ln3LuSe6 (Ln = La, Ce), beta-LnLuSe3 (Ln = Pr, Nd), and LnxLu4-xSe6 (Ln = Sm, Gd; x = 1.82, 1.87) have been synthesized using a Sb2Se3 flux at 1000 degrees C. Ln3LuSe6 (Ln = La, Ce) adopts the U3ScS6-type three-dimensional structure, which is constructed from two-dimensional 2(infinity)[Ln3Se6](3-) slabs with the gaps between these slabs being filled by octahedrally coordinated Lu(3+) ions. The series of beta-LnLuSe3 (Ln = Pr, Nd) are isotypic with UFeS3. Their structures include layers formed from LuSe6 octahedra that are separated by eight-coordinate Ln(3+) (Ln = Pr, Nd) ions in bicapped trigonal prismatic environments. Sm1.82Lu2.18Se6 and Gd1.87Lu2.13Se6 crystallize in the disordered F-Ln2S3 type structure with the eight-coordinate bicapped trigonal prismatic Ln(1) ions residing in the one-dimensional channels formed by three different double chains via edge- and corner-sharing. These double chains are constructed from Ln(2)Se7 monocapped trigonal prisms, Ln(3)Se6 octahedra, and Ln(4)S6 octahedra, respectively. The magnetic susceptibilities of beta-PrLuSe3 and beta-NdLuSe3 follow the Curie-Weiss law. Sm1.82Lu2.18Se6 shows van Vleck paramagnetism. Magnetic susceptibility measurements show that Gd1.87Lu2.13Se6 undergoes an antiferromagnetic transition around 4 K. Ce3LuSe6 exhibits soft ferromagnetism below 5 K. The optical band gaps for La3LuSe6, Ce3LuSe6, beta-PrLuSe3, beta-NdLuSe3, Sm1.82Lu2.18Se6, and Gd1.87Lu2.13Se6 are 1.26, 1.10, 1.56, 1.61, 1.51, and 1.56 eV, respectively.     

APdCu(Se2)(Se3) (A = K and Rb): new quaternary copper palladium polyselenides with unusual metal-selenium coordination

Two novel metal polyselenides, KPdCu(Se(2))(Se(3)) (I) and RbPdCu(Se(2))(Se(3)) (II), have been synthesized from solvothermal reactions in superheated ethylenediamine at 160 degrees C. The isostructural compounds crystallize in the monoclinic space group P2(1)/m, Z = 2, with a = 6.145(1) A, b = 7.268(1) A, c = 8.865(2) A, beta = 102.41(3) degrees for I, and a = 6.253(1) A, b = 7.267(1) A, c = 8.993(2) A, beta = 102.28(3) degrees for II. Their crystal structures are two-dimensional networks with [PdCu(Se(2))(Se(3))](-) anionic layers built from one-dimensional [Pd(Se(2))(Se(3))](2)(-) "chains" that are "stitched" together by tetrahedrally coordinated Cu atoms. The DSC data show that I and II are stable up to 400 degrees C and decompose at ca. 436 and 424 degrees C, respectively. Both compounds are narrow band-gap semiconductors with estimated band gaps of about 0.7 eV (I) and 0.8 eV (II), respectively. They are the first structurally characterized quaternary copper palladium polychalcogenides with a (Se(2))(2)(-) and a (Se(3))(2)(-) fragment, both exhibiting interesting and unusual metal-selenium coordination.     

Synthesis, structure, and properties of Cs(4)Th(4)P(4)Se(26): a quaternary thorium selenophosphate containing the (P(2)Se(9))(6-) anion

Orange crystals of Cs(4)Th(4)P(4)Se(26) were grown from the reaction of (232)Th and P in a Cs(2)Se(3)/Se molten salt flux at 750 degrees C. Cs(4)Th(4)P(4)Se(26) crystallizes in the orthorhombic space group Pbca with the unit cell parameters: a = 12.0130(6), b = 14.5747(7), c = 27.134(1) A; Z = 8. The compound exhibits a three-dimensional structure, consisting of dimeric [Th(2)Se(13)] polyhedral units. The two crystallographically independent, nine-coordinate, bicapped trigonal prismatic thorium atoms share a triangular face to form the dimer, and each dimer edge-shares two selenium atoms with two other dimers to form kinked chains along the [010] direction. While this structure shares features of the previously reported Rb(4)U(4)P(4)Se(26), including phosphorus in the 5+ oxidation state, careful inspection of the structure reveals that the selenophosphate anion that knits the structure together in three directions in both compounds is a unique (P(2)Se(9))(6-) anion. The formula may be described best as [Cs(2)Th(2)(P(2)Se(9))(Se(2))(2)](2). The (P(2)Se(9))(6-) anion features a nearly linear Se-Se-Se backbone with an angle of 171 degrees and Se-Se distances that are approximately 0.2-0.3 A longer than the typical single Se-Se bond. Magnetic studies confirm that this phase contains Th(IV). Raman data for this compound is reported, and structural comparisons will be drawn to its uranium analogue, Rb(4)U(4)P(4)Se(26).     

A Comparative Study of Two New Structure Types. Synthesis and Structural and Electronic Characterization of K(RE)P(2)Se(6) (RE = Y, La, Ce, Pr, Gd)

Two polytypes of potassium rare-earth-metal hexaselenodiphosphates(IV), K(RE)P(2)Se(6) (RE = Y, La, Ce, Pr, Gd), have been synthesized from the stoichiometric reaction of RE, P, Se, and K(2)Se(4) at 750 degrees C. Both single-crystal and powder X-ray diffraction analyses showed that the structures of these polytypes vary with the size of the rare earth metals. For the smaller rare-earth metals, Y and Gd, K(RE)P(2)Se(6) crystallized in the orthorhombic space group P2(1)2(1)2(1). The yttrium compound was studied by single-crystal X-ray diffraction with the cell parameters a = 6.7366(5) ?, b = 7.4286(6) ?, c = 21.603(2) ?, and Z = 4. This structure type comprises a layered, square network of yttrium atoms that are bound to four distinct [P(2)Se(6)](4)(-) units through selenium bonding. Each [P(2)Se(6)](4)(-) unit possesses a Se atom that is not bound to any Y atom but is pointing out into the interlayer spacing, into an environment of potassium cations. For larger rare-earth metals, La, Ce, and Pr, K(RE)P(2)Se(6) crystallized in a second, monoclinic polytype, the structure of which has been published. Both of these two different polytypes can be related to each other and several other isoelectronic chalcophosphate structures based on a Parthé valence electron concentration analysis. These structures include Ag(4)P(2)S(6), K(2)FeP(2)S(6), and the hexagonal M(II)PS(3) structure types. The magnetic susceptibilities of the title compounds have been studied, and the behavior can been explained based on a simple set of unpaired f-electrons. The diffuse reflectance spectroscopy also showed that these yellow plates are moderately wide band gap ( approximately 2.75 eV) semiconductors.     

Synthesis, crystal and electronic structures, and magnetic properties of LiLn9Mo16O35 (Ln = La, Ce, Pr, and Nd) compounds containing the original cluster Mo16O36

The new compounds LiLn(9)Mo(16)O(35) (Ln=La, Ce, Pr, and Nd) were synthesized from stoichiometric mixtures of Li(2)MoO(4), Ln(2)O(3), Pr(6)O(11) or CeO(2), MoO(3), and Mo heated at 1600 °C for 48 h in a molybdenum crucible sealed under a low argon pressure. The crystal structure, determined from a single crystal of the Nd member, showed that the main building block is the Mo(16)O(36) unit, the Mo(16) core of which is totally new and results from the fusion of two bioctahedral Mo(10) clusters. It can also be viewed as a fragment of an infinite twin chain of edge-sharing Mo(6) octahedra. The Mo(16)O(36) cluster units share some oxygen atoms to form infinite chains running parallel to the b axis, which are separated by the rare-earth and lithium cations. (7)Li-NMR experiments, carried out at high field on the nonmagnetic LiLa(9)Mo(16)O(35), provided insights into the local environment of the lithium ions. Magnetic susceptibility measurements confirmed the trivalent oxidation state of the magnetic rare-earth cations and indicated the absence of localized moments on the Mo(16) clusters. The electronic structure of the LiLn(9)Mo(16)O(35) compounds was analyzed using molecular and periodic quantum calculations. The study of the molecular orbital diagrams of isolated Mo(16)O(36) models allowed the understanding of this unique metallic architecture. Periodic density functional theory calculations demonstrated that few interactions occur between the Mo(16) clusters, and predicted semiconducting properties for LiLn(9)Mo(16)O(35) as a band gap of 0.57 eV was computed for the lanthanum phase.     

Syntheses, structures, physical properties, and theoretical studies of CeMxOS (M = Cu, Ag; x approximately 0.8) and CeAgOS

Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCu(x)OS and CeAg(x)OS (x approximately 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu(0.8)OS and CeAgOS are paramagnetic with mu(eff) values of 2.13(6) and 2.10(1) mu(B), respectively. CeCu(0.8)OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, sigma(electrical) = 9.8(1) 10(-3) S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity sigma(conductivity) = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu(0.75)OS, or CeAgOS. Calculated band gaps for CeCu(0.75)OS and CeAgOS are 0.6 and 0.8 eV, respectively.     

Lanthanide clusters with internal Ln: fragmentation and the formation of dimers with bridging Se(2-) and Se2(2-) ligands

Reactions of "LnI(x)(SePh)(3-x)" (Ln = Dy, Ho) with elemental S/Se give (THF)14Ln10S6(Se2)6I6. The compounds are composed of a Ln6S6 double cubane core, with two twisted "Ln2(SeSe)3" units condensed onto opposing rectangular sides of the Ln6S6 fragment. This deposition of Ln2Se6 totally encapsulates the two central Ln's with chalcogen atoms (four S and four Se atoms), excluding neutral THF donors or iodides from the two primary coordination spheres. Reactions of Ln(10) clusters with a stronger Lewis base result in fragmentation and, in the case of Ln = Er, the isolation of (py)6Er2(Se2)(S0.8Se0.2)I2, with two Ln(III) ions spanned by E2- and (EE)2- ligands. The related homochalcogen dimers (py)6Ln2(Se2)(Se)Br2 (Ln = Ho, Yb) were prepared to establish that such molecules could be prepared rationally, and to confirm the isolability of E2- ligands coordinated to only two sterically unconstrained Ln ions.     

Syntheses, Crystal and Band Structures, and Magnetic and Optical Properties of New CsLnCdTe(3) (Ln = La, Pr, Nd, Sm, Gd-Tm, and Lu)

A series of new quaternary semiconductor materials CsLnCdTe(3) (Ln = La, Pr, Nd, Sm, Gd-Tm, and Lu) was obtained from high-temperature solid-state reactions by the reactive halide flux method. These compounds belong to the layered KZrCuS(3) structure type and crystallize in the orthorhombic space group Cmcm (No. 63). Their structure features two-dimensional infinity(2)[LnCdTe(3)-] layers of edge- and vertex-sharing LnTe(6) octahedra with Cd atoms filling the tetrahedral interstices, which stack along b-axis. The Cs atoms are located between the infinity(2)[LnCdTe(3)-] layers and are surrounded by eight Te atoms to form a CsTe(8) bicapped trigonal prism. Such Te layers are more flexible than the Se analogues in the isostructural CsLnMSe(3) to accommodate nearly the entire Ln series. Theoretical studies performed on CsTmCdTe(3) show that the material is a direct band gap semiconductor and agrees with the result from a single-crystal optical absorption measurement. Magnetic susceptibility measurements show that the CsLnCdTe(3) (Ln = Pr, Nd, Gd, Dy, Tm) materials exhibit temperature-dependent paramagnetism and obey the Curie-Weiss law, whereas CsSmCdTe(3) does not.     

Rare-earth metal(III) oxide selenides M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) with discrete diselenide units: crystal structures, magnetic frustration, and other properties

The rare-earth metal(III) oxide selenides of the formula La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were synthesized from a mixture of the elements with selenium dioxide as the oxygen source at 750 degrees C. Single crystal X-ray diffraction was used to determine their crystal structures. The isostructural compounds M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) crystallize in the orthorhombic space group Amm2 with cell dimensions a=857.94(7), b=409.44(4), c=1316.49(8) pm for M=La; a=851.37(6), b=404.82(3), c=1296.83(9) pm for M=Ce; a=849.92(6), b=402.78(3), c=1292.57(9) pm for M=Pr; a=845.68(4), b=398.83(2), c=1282.45(7) pm for M=Nd; and a=840.08(5), b=394.04(3), c=1263.83(6) pm for M=Sm (Z=2). In their crystal structures, Se2- anions as well as [Se-Se]2- dumbbells interconnect {[M4O4]4+} infinity 2 layers. These layers are composed of three crystallographically different, distorted [OM4]10+ tetrahedra, which are linked via four common edges. The compounds exhibit strong Raman active modes at around 215 cm(-1), which can be assigned to the Se-Se stretching vibration. Optical band gaps for La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were derived from diffuse reflectance spectra. The energy values at which absorption takes place are typical for semiconducting materials. For the compounds M4O4Se[Se2] (M=La, Pr, Nd, Sm) the fundamental band gaps, caused by transitions from the valence band to the conduction band (VB-CB), lie around 1.9 eV, while for M=Ce an absorption edge occurs at around 1.7 eV, which can be assigned to f-d transitions of Ce3+. Magnetic susceptibility measurements of Ce4O4Se[Se2] and Nd4O4Se[Se2] show Curie-Weiss behavior above 150 K with derived experimental magnetic moments of 2.5 micro B/Ce and 3.7 micro B/Nd and Weiss constants of theta p=-64.9 K and theta p=-27.8 K for the cerium and neodymium compounds, respectively. Down to 1.8 K no long-range magnetic ordering could be detected. Thus, the large negative values for theta p indicate the presence of strong magnetic frustration within the compounds, which is due to the geometric arrangement of the magnetic sublattice in form of [OM4]10+ tetrahedra.     

Syntheses,structures, and properties of the bis(cyclopentadienyl) rare-earth imidodiphosphinochalocogenido compounds Cp2Ln[N(QPPh2)2] (Ln = La,Gd, Er,or Yb for Q = Se; Ln = Yb for Q = S)

The compounds Cp2Ln[N(QPPh2)2] (Ln = La (1), Gd (2), Er (3), or Yb (4) for Q = Se, Ln = Yb (5) for Q = S) have been synthesized from the corresponding rare-earth tris(cyclopentadienyl) compound and H[N(QPPh2)2]. The structures of compounds 1, 2, 3, and 5, as determined by X-ray crystallography, consist of a Cp2Ln fragment, coordinated eta 3 through two chalcogen atoms and an N atom of the imidodiphosphinochalcogenido ligand [N(QPPh2)2]-. In compound 4, the Cp2Yb moiety is coordinated eta 2 through the two Se atoms of the [N(SePPh2)2]-ligand. 31P and 77Se (for 1) NMR spectroscopies lend insight into the solution nature of these species. Crystal data: 1, C34H30LaNP2Se2, triclinic, P1, a = 9.7959(10) A, b = 12.4134(13) A, c = 13.9077(14) A, alpha = 88.106(2) degrees, beta = 88.327(2) degrees, gamma = 68.481(2) degrees, V = 1572.2(3) A3, T = 153 K, Z = 2, and R1(F) = 0.0257 for the 5947 reflections with I > .2 sigma(I); 2, C34H30GdNP2Se2, triclinic, P1, a = 9.7130(14) A, b = 12.2659(17) A, c = 13.953(2) A, alpha = 88.062(2) degrees, beta = 87.613(2) degrees, gamma = 69.041(2) degrees, V = 1550.7(4) A3, T = 153 K, Z = 2, and R1(F) = 0.0323 for the 5064 reflections with I > 2 sigma(I); 3, C34H30ErNP2Se2, triclinic, P1, a = 9.704(2) A, b = 12.222(3) A, c = 13.980(4) A, alpha = 88.230(4) degrees, beta = 87.487(4) degees, gamma = 69.107(4) degrees, V = 1547.4(7) A3, T = 153 K, Z = 2, and R1(F) = 0.0278 for the 6377 reflections with I > 2 sigma(I); 4, C34H30NP2Se2Yb.C4H8O, triclinic, P1, a = 12.087(4) A, b = 12.429(4) A, c = 23.990(7) A, alpha = 89.406(5) degrees, beta = 86.368(5) degrees, gamma = 81.664(5) degrees, V = 3558.8(18) A3, T = 153 K, Z = 4, and R1(F) = 0.0321 for the 11,883 reflections with I > 2 sigma(I); and 5, C34H30NP2S2Yb, monoclinic, P21/n, a = 13.8799(18) A, b = 12.6747(16) A, c = 17.180(2) A, beta = 91.102(3) degrees, V = 3021.8(7) A3, T = 153 K, Z = 4, and R1(F) = 0.0218 for the 6698 reflections with I > 2 sigma(I).     

Synthesis,structure, and optical properties of CsU2(PO4)3

CsU₂(PO₄)₃ was synthesized in highest yield by the reaction in a fused-silica tube of U, P, and Se in a CsCl flux at 1273 K. It crystallizes with four formula units in space group P2₁/n of the monoclinic system in a new structure type. The structure of CsU₂(PO₄)₃ is composed of U and Cs atoms coordinated by PO₄^3? units in distorted octahedral arrangements. Each U atom corner shares with six PO₄^3? units. Each Cs atom face shares with one, edge shares with two, and corner shares with three PO₄^3? units. The structure shares some features with the sodium zirconium phosphate structure type. X-ray powder diffraction results demonstrate that the present CsU₂(PO₄)₃ compound crystallizes in a structure different from the previously reported β′- and γ-CsU₂(PO₄)₃ compounds. CsU₂(PO₄)₃ is highly pleochroic, as demonstrated by single-crystal optical absorption measurements.     

Syntheses and characterization of nine quaternary uranium chalcogenides among the compounds A2M3UQ6 (A = K, Rb, Cs; M = Pd, Pt; Q = S, Se)

Nine compounds from the series A(2)M(3)UQ(6) (A = K or Rb or Cs; M = Pd or Pt; Q = S or Se) were synthesized by reacting U, M, and Q in ACl or A(2)Q(x) fluxes. These compounds crystallize with eight formula units in the NaBa(2)Cu(3)O(6) structure type, in space group Fmmm of the orthorhombic system. The structure contains hexagons formed from six edge-sharing square-planar coordinated M atoms, which in turn edge-share with trigonal-prismatically coordinated U atoms, forming layers along (010). These layers are separated by A atoms. Electrical resistivity measurements along the [100] direction of Rb(2)Pd(3)US(6) show typical semiconductor behavior. Magnetic susceptibility measurements on Rb(2)Pd(3)US(6) display marked magnetic anisotropy and unusually low magnetic moments owing to crystalline electric field effects.     

Crystal structures, electronic properties, and pressure-induced superconductivity of the tetrahedral cluster compounds GaNb(4)S(8), GaNb(4)Se(8), and GaTa(4)Se(8)

The crystal structures of the tetrahedral cluster compounds GaNb(4)S(8) and GaTa(4)Se(8) were determined by single-crystal X-ray diffraction. They crystallize in the cubic GaMo(4)S(8) structure type (F3m), which can be derived from the spinel type by shifting the metal atoms off the centers of the chalcogen octahedra along [111]. Electrical resistivity and magnetic susceptibility measurements show that the electronic conduction originates from hopping of localized unpaired electrons (S = (1)/(2)) among widely separated Nb(4) or Ta(4) clusters, and thus these materials represent a new class of Mott insulators. Under high pressure we find that GaNb(4)S(8) undergoes a transition from the Mott insulating to a superconducting state with T(C) up to 4 K at 23 GPa, similar to GaNb(4)Se(8) and GaTa(4)Se(8). High-pressure single-crystal X-ray studies of GaTa(4)Se(8) reveal that the superconducting transition is connected with a gradual decrease of the octahedral distortion with increasing pressure. DFT band structure calculations show that weakly coupled cluster orbitals are responsible for a high density of states at the Fermi level. The correct insulating magnetic ground state for GaNb(4)S(8) with mu(eff) = 1.73 mu(B) is for the first time achieved by the LDA+U method using U = 6 eV and rhombohedral symmetry.