电子密度对等离子体光子晶体禁带特性的影响

从Maxwell方程出发,采用类似于量子力学Kronig-Penney模型求解周期势的方法,结合双水电极介质阻挡放电的实验结果,研究了电子密度ne对一维等离子体光子晶体禁带特性的影响。研究发现:电子密度对等离子体光子晶体光子禁带的位置和宽度均有重要的影响;等离子体光子晶体的禁带宽度随电子密度的增加而增大,增长速率为电子密度的函数;等离子体光子晶体的截止频率、光子禁带边缘频率随电子密度的增大而增大。给出了当等离子体光子晶体具有显著禁带宽度时的电子密度的理论临界值。     

Compton散射对非均匀等离子体光子晶体光子带隙的影响

应用多光子非线性Compton散射模型和时域有限差分法,对多光子非线性Compton散射对非均匀等离子体光子晶体光子带隙特性的影响进行了研究,提出将入射和散射光作为形成光子带隙的新机制,对电磁波方程进行了修正.结果表明:与Compton散射前相比,散射使电磁波幅值衰减更快|随等离子体密度增加,透射谱禁带宽度几乎无变化,其中心频率向高频方向有明显移动,向上的峰值有较大增加,反射谱向下的峰值有明显减小|随温度增加,透射谱禁带宽明显减小,向上的峰值略有减小,透射能量有所降低|随两种介质介电系数比增加,光子禁带数增加,且带隙间距显著减小.     

Compton散射对非均匀等离子体光子晶体光子带隙的影响

应用多光子非线性Compton散射模型和时域有限差分法,对多光子非线性Compton散射对非均匀等离子体光子晶体光子带隙特性的影响进行了研究,提出将入射和散射光作为形成光子带隙的新机制,对电磁波方程进行了修正.结果表明:与Compton散射前相比,散射使电磁波幅值衰减更快;随等离子体密度增加,透射谱禁带宽度几乎无变化,...     

可调光子晶体研究进展

可调光子晶体是光子晶体研究中的一个新领域，文章简单介绍了当前可调光子晶体的发展状况，阐述了其调制机理及存在的问题，同时论述了可调光子晶体的发展趋势。     

等离子体光子晶体

提出了等离子体光子晶体的概念,研究了电磁波在等离子体光子晶体中的传播规律。从得到的色散曲线看到等离子体光子晶体具有光子能带和能隙结构。数值计算发现,等离子体光子晶体对色散有很大的影响。     

光子晶体及其应用

光子晶体是８０年代末提出的新概念和新材料,文章简单回顾了光子晶体的历史,重点阐述了其主要特征以及可能的应用,同时论述了研究光子晶体的几种理论方法。     

时变磁化等离子体光子晶体的禁带特性

采用磁化等离子体的分段线形电流密度卷积(Piecewise Linear Current Density Recursive Convolution,PLCDRC)时域有限差分(Finite-Different Time-Domain, FDTD)算法研究了一维时变磁化等离子体光子晶体的禁带特性。以高斯脉冲为激励源,用算法公式所得的电磁波透射系数来讨论了等离子体上升时间、密度、周期常数对其禁带特性的影响。结果表明,改变等离子体上升时间和密度可以实现对禁带的控制。     

等离子体填充金属光子晶体慢波结构色散特性研究

等离子体填充慢波器件为高效率、高功率真空电子微波源的发展提供了新的途径, 但其仿真和理论都具有一定的难度. 本文将通过轮辐天线加载激励信号的方法引入到等离子体填充金属光子晶体慢波结构(SWS)的色散特性仿真分析中, 研究了慢波结构参数和等离子体密度对等离子体填充慢波结构色散特性的影响. 结果表明, 无等离子体填充时, 通过轮辐天线加载激励信号方式得到的色散特性与其他方法差别不大; 与已有结果对比表明, 该方法适用于等离子体填充慢波结构的分析. 为了减小轮辐天线对腔体谐振频率的影响, 需要适当减薄轮辐天线的厚度, 并尽可能缩短其与反射面之间的距离. 天线的厚度越大越能激励慢波场, 越小谐振模式越容易被激励; 慢波结构周期膜片外半径和厚度对色散特性影响不大, 周期长度和膜片内半径对色散特性影响较大; 频率和相速色散曲线随等离子体密度上升而整体向高频区移动; 等离子体填充对低频模点的影响要大于对高频模点的影响; 对于慢波器件, 需要选择高频模点工作模式, 以减少腔的尺寸并降低电子注的初速度.     

色散补偿光子晶体光纤结构参数对其色散的影响

光子晶体光纤由于其灵活可调的色散特性用作色散补偿具有极大的应用潜力. 设计了一种色散补偿光子晶体光纤, 并运用频域有限差分法模拟了其色散特性,从理论上分析了其结构参数孔间距Λ和空气占空比d/Λ对该光子晶体光纤的色散系数的影响, 并且实际制备出了3种不同结构参数的光子晶体光纤. 通过对其色散曲线对比分析表明: 当光子晶体光纤孔间距在1 μm附近时, 其色散系数随着孔间距Λ和占空比d/Λ的增大而增加, 但对于孔间距Λ的变化比占空比d/Λ更为敏感, 并且随着孔间距Λ的增加,其对色散系数的影响能力逐渐减小. 设计并制备的光子晶体光纤在1550 nm处的色散系数为-241.5 ps·nm^-1·km^-1, 相对色散斜率为0.0018, 具有较好的色散补偿能力. 关键词： 色散 色散补偿 光子晶体光纤 结构参数     

Compton散射下激光等离子体纵波色散特性

应用电子与多光子集团非线性Compton散射模型,研究了Compton散射下激光等离子体纵波色散特性.结果表明:长波支纵色散曲线由解析上的长波、数值计算结果和短波组成,长波支和短波支纵色散均随相对论正负电子对特征温度的增大而增大,随Compton散射引起的频率的增量的增大而降低,且单温激光等离子体的色散曲线与散射前的双温等离子体的色散曲线相似.     

Effective dielectric constant of two-dimensional photonic crystals in optical bands

By using the Fourier expansion method, we have developed an approach to calculate the effective dielectric index of a two-dimensional photonic crystal. The approach is very general: it can take into account various Bravais lattice structure as well as arbitrary spatial variation of the dielectric index. It has been found that near a nondegenerate frequency ω_n(Γ) at Γ point, the transverse magnetic (TM) mode is ordinary, as it is independent of the propagation direction, whereas in general the transverse electric (TE) mode depends on the propagation direction, it is extraordinary. Therefore, a two-dimensional photonic crystal can always be described by an effective dielectric index for TM mode near the nondegenerate frequency ω_n(Γ). However, the TE mode is much more complicated unless the lattice structure is highly symmetric. Moreover, a two-dimensional square photonic crystal has been identified as an effective birefringent crystal having two negative refractive indexes from the perspective of Snell's law.     

Omni-directional reflection bands in one-dimensional plasma dielectric photonic crystals

In this paper the omni-directional reflection bands in one-dimensional plasma photonic crystal (PPC) have been studied theoretically. We present the study of plasma photonic crystal, having alternate regions of plasma?dielectric (Al₂O₃ or ZnS). Reflectances from this periodic multilayered structure in TE- and TM-modes are calculated for different angles of incidence in microwave region for omni-directional reflection bands. The reflectance is obtained by solving a Maxwell's equation using a translational matrix method. In addition to this, we have also studied the effect of variation of plasma width as well as plasma density on the reflection properties of plasma dielectric photonic crystal in TE- and TM-modes. The study of reflectance bands of such plasma photonic crystals shows that it can be used as omni-directional reflector.     

Influence of the dielectric background on the quality factors of metallo-dielectric photonic crystals

The effect of varying the dielectric background on the quality factor of two-dimensional metallo-dielectric photonic crystals is theoretically studied. The studied metallo-dielectric photonic crystal consists of a square lattice of circular metallic rods embedded into a dielectric background with a defect rod on the center that creates resonant modes within the photonic band gap. The metal is modeled with the Drude dispersion relation. A combination of the finite-difference time-domain method together with a frequency filtering technique is used to estimate accurately the resonant frequencies and their quality factors. The results show that the quality factors increase with increasing background dielectric constant. If a dielectric background material such as Silicon is used instead of air, an enhancement in the quality factor of up to eight times can be achieved, depending on the resonant mode. We also show that, depending on the modes, there exists an optimal size for the defect rod that gives the maximum quality factor.     

Photonic band gap effect in one-dimensional plasma dielectric photonic crystals

Propagation of electromagnetic waves in one-dimensional plasma dielectric photonic crystals, the superlattice structure consisting of alternating plasma and dielectric materials, is studied theoretically using transfer matrix method. Numerical calculation is presented for plasma-air finite and infinite periodic structures. The results of photonic band gap characteristics are discussed in terms of plasma density, plasma width, and number of unit cells (N).     

Extended plane-wave-based transfer-matrix approach to simulating dispersive photonic crystals

It has been difficult to compute the band structures and transmission spectra for photonic crystals (PCs) with dispersive components included in the periodic units. Here we show that by using an extended plane-wave-based transfer-matrix method, we are able to formulate the problem for computing optical properties of dispersive PCs, including magnetic and left-handed PCs. This approach is very general, since it can treat PCs with arbitrary Bravais lattice composed of materials with arbitrary dielectric permittivities and magnetic permeabilities. Combined with the supercell method, this method can further simulate defective PCs such as PC-based waveguides and microcavities.     

Magneto-optical Faraday effects in dispersive properties for three-dimensional magnetized plasma photonic crystals

The dispersive properties of three-dimensional magnetized plasma photonic crystals composed of homogeneous magnetized plasma spheres immersed in isotropic dielectric host with face-centered-cubic lattices are theoretically studied based on plane wave expansion method, as the magneto-optical Faraday effects of magnetized plasma are considered. The equations for calculating the band structures are theoretically deduced. The photonic band gap and a flatbands region can be obtained. The influences of host dielectric constant, plasma collision frequency, filling factor, external magnetic field and plasma frequency on the dispersive properties are investigated in detail, respectively, and some corresponding physical explanations are also given. The numerical results show that the photonic band gap can be manipulated by the plasma frequency, filling factor, external magnetic field and host dielectric constant, respectively. However, the plasma collision frequency has no effects on photonic band gap. The location of flatbands region cannot be tuned by any parameters except for the plasma frequency and external magnetic field.     

Investigation of one-dimensional photonic crystals composed of dispersive materials

One-dimensional photonic crystals (1DPCs) composed of dispersive materials (including negative refractive index materials, negative μ materials, and negative ? materials) are proposed. The dependence of the band gaps on the angle of incidence and thickness scale are investigated by using the transfer matrix method. Simulation results show that the band gaps of these dispersive material 1DPC are insensitive to the thickness scale. The defect modes of these doped 1DPCs behave specially when the thickness of the defect layer, the angle of incidence and the thickness scale of PC change.     

二维色散和各向异性磁化等离子体光子晶体色散特性研究

采用平面波展开法和时域有限差分法研究了二维色散和各向异性磁化等离子体光子晶体的色散特性.当波矢在周期平面时,由于外加磁场的作用使TE模的色散曲线出现两个不同区域的平带,改变磁场的大小不但可以控制平带的位置,而且可以控制光子带隙的位置和大小.增大背景材料的介电常数,可以形成全方向光子带隙,随着背景材料介电常数的增加,带隙的中心位置降低但带隙宽度增加.当波矢偏离周期平面时,色散曲线不再分为TE和TM模,随着非周期平面波矢的增加,带隙位置上移,带隙宽度先增加随后基本保持不变.     

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应用多光子非线性Compton散射模型和分段电流密度卷积时域有限差分法,将入射光和Compton 散射光作为形成缺陷模的机制,研究了Compton散射对具有单一缺陷模的时变磁化等离子体光子晶体缺陷模的影响.结果表明:与Compton散射前相比,入射光频率低于等离子体频率时,禁带中仍存在明显的缺陷模,其频率随等离子体驰豫时间的增大而缓慢增大;等离子体弛豫时间相等时,等离子体均匀分布的禁带透射系数峰值比Epstein分布时小,两者的缺陷模特征都比较明显,但两者的禁带宽度及缺陷模之间的区别明显减小.     

Effect of the dielectric background on dispersion characteristics of metallo-dielectric photonic crystals

We theoretically study the effect of the dielectric background in two-dimensional metallo-dielectric photonic crystals. The metallo-dielectric photonic crystal consists of a square lattice of circular metallic rods embedded into a dielectric background. We calculate the photonic band structure by means of the plane wave method and the frequency-dependent finite-difference time-domain method. The transfer matrix method is used to obtain the reflectivity characteristics. Results show that the band structures shift toward lower frequencies and become flatter when the background dielectric constant increases. In addition, degeneracy can be broken and new gaps can be created in function of the dielectric background. We also found that the relative band gap width Δω/ω_g grows with increasing background dielectric constant and widths as large as 42.3% and 13.8% for the second and third band gaps can be achieved for ε_b = 9. We have investigated the origin of the new gap in these structures by studying the electric-field distribution at the band edges for the first five modes.