Stratification of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> Single Crystals and Sintering of the Obtained Micro- and Nanoscale Plates

The use of surface active liquids facilitates intense stratification of mechanically strained Bi_0.5Sb_1.5Te₃ crystallites. A Bi_0.5Sb_1.5Te₃ heat element with specified thickness and structure is formed by layer-by-layer deposition of “thermoelectric ink” on its free surface. A heat treatment of the formed thermoelectric element in argon at a temperature of 800 K makes it possible to minimize radically the resistance of the grain boundaries introduced into its bulk.     

Effect of conditions of preparation on the thermoelectric properties of solid solutions of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

The effect the conditions of preparing thermoelectric solid solutions of Bi_0.5Sb_1.5Te₃ + 0.06 wt % Pb by hardening from the liquid state with subsequent hot pressing have on their thermoelectric properties is studied. It is found that the optimum thermoelectric quality factors are achieved at a 2200–2800 rpm rate of copper disc rotation.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

Suppression of intrinsic conduction in <Emphasis Type="Italic">p</Emphasis>-Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript> under plastic deformation

The effect of suppression of intrinsic conduction in the narrow-band-gap p-Bi_0.5Sb_1.5Te₃ semiconductor subjected to plastic deformation is revealed. The effect consists in slowing down the decrease in the thermopower coefficient at high temperatures due to intrinsic conduction. The observed effect can be caused by an enhancement of the misorientation of crystal grains or by the formation of linear structural defects (dislocations, microcracks), which are responsible for the decrease in the mobility of predominantly minority charge carriers.     

Anomalous increase of the thermopower and thermoelectric figure of merit in Ga-doped <Emphasis Type="Italic">p</Emphasis>-(Bi<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> single crystals

The effect of Ga doping on the temperature dependences (5 K ≤ T ≤ 300 K) of the Seebeck coefficient α, electrical conductivity σ, thermal conductivity coefficient κ, and thermoelectric figure of merit Z of p-(Bi_0.5Sb_0.5)₂Te₃ single crystals has been investigated. It has been shown that, upon Ga doping, the hole concentration decreases, the Seebeck coefficient increases, the electrical conductivity decreases, and the thermoelectric figure of merit increases. The observed variations in the Seebeck coefficient cannot be completely explained by the decrease in the hole concentration and indicate a noticeable variation in the density of states due to the Ga doping.     

Features of the electron density distribution in antimony telluride Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>

Based on the results of electron density functional calculations of the electronic band structure of semiconductors Sb₂Te₃, Ge, Te, and semimetal Sb, the parameters of critical points in the electron density distribution (maxima, minima, and saddle points) in the lattices of the above materials are found. The data obtained are used to analyze the chemical bond nature in Sb₂Te₃.     

Mechanism of formation of texture and its influence on the strength of thermoelectric <Emphasis Type="Italic">p</Emphasis>-Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

It is established that, in preparing p-Bi_0.5Sb_1.5Te₃ by vertical zone melting, in addition to the directional texture (characteristic of materials exhibiting a highly anisotropic growth rate) in which the cleavage planes of crystal grains are parallel to the direction of propagation of the crystallization front, other texture types can arise, in which the orientation of grain cleavage planes is ordered in a cross-sectional plane of the ingot. Two types of such textures, “radial” and “circular,” were observed. In a radial texture, the lines of intersection of grain cleavage planes with a cross-sectional plane of the ingot are oriented along radii of this cross section and, in a circular texture, these lines of intersection are oriented approximately perpendicular to a radius crossing the grain. The formation of a radial texture is associated with rotation of the ampoule with the crystallizing substance about its vertical axis causing centrifugal flows of the melt. The formation of a circular texture is associated with the orientation effect of the ampoule walls and with circular motion of the melt during torsional oscillations of the ampoule about the vertical axis. Ingots with a radial texture exhibit much lower resistance to splitting along their axis than ingots with a circular texture do. An explanation is provided for this fact.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Magnetic Resonance Study of the Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Doped with Manganese

Crystals of 3D topological insulators, bismuth telluride Bi₂Te₃, doped with manganese were studied using electron spin resonance (ESR) spectroscopy together with the SQUID magnetometry, transport measurements, and X-ray characterization. The obtained ESR data, such as the temperature and the angular dependence of the resonance field, reveal the specific critical behavior and confirm the ferromagnetic ordering of Mn spins even at modest doping. In addition to the studies of the critical behavior of diluted ferromagnet Bi_2?x Mn _x Te_3, we also discuss the effects of the limited solubility of Mn ions giving rise to microscopic inclusions of the spurious magnetic phases which were revealed using ESR technique.     

Some peculiarities of magnetoresistance and Hall resistance of Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> nanoplates

Antimony telluride (Sb₂Te₃) nanoplates of various thickness were grown by the vapor phase deposition method. The Hall resistance and magnetoresistance of the samples were measured in magnetic fields up to 9 T at temperatures from 2 to 300 K. Temperature dependence of the magnetoresistance and Hall resistance of the nanoplates shows a strong dependence on the thickness of the samples. Relatively thick samples show a nonlinear dependence of the Hall resistance on magnetic field. The measurement data are analyzed within the model of multi-channel transport. The difference in behavior is attributed to the existence of two channels of charge transfer with high and low mobility.     

Optical functions of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> solid solutions in the range of plasmon excitation and interband transitions

The most narrow sub-Doppler frequency resonances in the linear absorption of monochromatic radiation that propagates in the normal direction through a cell containing a layer of rarefied gas medium with a thickness smaller than or on the order of the wavelength of this radiation are theoretically studied. The calculation is performed using as an example a three-dimensional gas cell shaped like a rectangular parallelepiped. It is shown that the width and amplitude of considered sub-Doppler resonances (in the vicinity of centers of rather weak quantum transitions) significantly depend on the transit relaxation of atomic particles, which is determined by their transit times through the irradiated region of the cell both in longitudinal and in transverse directions. The restrictions of the approximation of the planar one-dimensional cell that was previously used in such calculations are determined. Possible applications of linear absorption resonances in ultrathin (nanometer) gas cells as references for optical frequency standards are discussed.     

Effect of thermal treatment on the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution thin films

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)₂(Te,Se)₃ solid solutions.     

NMR study of topological insulator Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> in a wide temperature range

NMR studies of ¹²⁵Te in the topological insulator bismuth telluride Bi₂Te₃ in a wide temperature range from room temperature to 12.5 K are performed. The pulsed NMR spectrometer Bruker Avance 400 is applied. The NMR spectra are obtained for the powder from Bi2Te3 single crystal and monocrystalline plates with the orientations c || B and c ⊥ B. At room temperature, the spectra consist of two lines related to two nonequivalent positions of tellurium nuclei Te1 and Te2. The parameters of the NMR frequency shift tensor are found from the powder spectrum. The temperature dependences of the spectra for the powder and plates with the orientation c ⊥ B agree with each other. The line shift with decreasing temperature is explained by the reduction of the Knight shift. The thermal activation energy of charge carriers is estimated. The spectra for the plates with the orientation c || B demonstrate peculiar behavior below 91 K. The spin-lattice relaxation time for the powder and monocrystalline plates with both orientations at room temperature is measured.     

Electrical properties of a lead-free perovskite ceramic: (Na<Subscript>0.5</Subscript>Sb<Subscript>0.5</Subscript>)TiO<Subscript>3</Subscript>

Polycrystalline (Na_0.5Sb_0.5)TiO₃ was prepared using a high-temperature solid-state reaction method. An XRD analysis indicated the formation of a single-phase monoclinic structure. Complex impedance studies revealed the presence of grain boundary effects from 300 °C onwards. Also, the dielectric relaxation in the system was found to be of a non-Debye type. The ac conductivity data were used to evaluate the density of states at the Fermi level, the minimum hopping length and activation energy of the compound. The dc electrical and thermal conductivities of grain and grain boundary have been assessed. The correlated barrier hopping model was found to successfully explain the mechanism of charge transport in (Na_0.5Sb_0.5)TiO₃. PACS 72.20.Ee; 77.22.Ch; 77.22.Gm; 77.84.Dy; 81.05.Je     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.     

Features of the electronic spectrum and optical absorption of ultrathin Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> films

The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi₂Se₃ topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”), which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.     

Dielectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)(Nb<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript>)O<Subscript>3</Subscript> ferroelectric ceramics modified with BaTiO<Subscript>3</Subscript>

Processes of the polarization and repolarization of ferroelectric ceramics based on potassium sodium niobate in the region of infralow frequencies are discussed. The effect aging and subsequent annealing in a strong alternating electric field have on the nonlinearity of the dielectric response of a sample at different temperatures is determined.     

Physical properties of FeSe<Subscript>0.5</Subscript>Te<Subscript>0.5</Subscript> single crystals grown under different conditions

We report on structural, magnetic, conductivity, and thermodynamic studies of FeSe_0.5Te_0.5 single crystals grown by self-flux and Bridgman methods. The lowest values of the susceptibility in thenormal state, the highest transition temperature T _c of 14.4 K, and the largest heat-capacity anomaly at T _c were obtained for pure (oxygen-free) samples. The criticalcurrent density j _c of 8.6 × 10⁴A/cm² (at 2 K) achieved in pure samples is attributed to intrinsic inhomogeneity due to disorder at the anion sites. The samples containing an impurity phase of Fe₃O₄ show increased j _c up to2.3 × 10⁵A/cm² due to additional pinning centers. The upper critical field\(H_{c2}\)of ~500 kOe is estimated from the resistivity studyin magnetic fields parallel to the c-axis using a criterion of a 50%drop of the normal state resistivity R _n . The anisotropy ofthe upper critical fieldγ _{H c2} =H ^ab _c2/H _c2 ^c reaches a value ~6 at\(T\longrightarrow T_c\). Extremely low values of the residualSommerfeld coefficient \(\gamma_r\) of about 1 mJ/mol K²,compared to the normal state Sommerfeld coefficient γ _n = 25mJ/mol K² for pure samples indicate a high volume fraction of thesuperconducting phase (up to 97%). The electronic contribution to the specific heat in thesuperconducting state is well described within a single-band BCS model with a temperature dependent gapΔ(0 K) = 27(1) K. A broad cusp-like anomaly in the electronic specific heat observed at low temperatures in samples with suppressed bulk superconductivity is ascribed to a splitting of the ground state of the Fe²⁺ ions at the 2c sites. This contribution is fully suppressed in the ordered state in samples with bulk superconductivity.