四角对称晶场中4B1(3d3)态离子的磁相互作用及其自旋哈密顿参量研究

基于完全对角化方法,研究了4B1(3d3)态离子在四角对称晶场中的磁相互作用,分析了自旋哈密顿参量(b02, g∥, g⊥, Δg)的微观起源.结果表明:在被考虑的大部分晶场区域,人们通常考虑的SO(spin-orbit)磁相互作用的贡献最为重要;然而,对于零场分裂参量b02而言,来自其他机理(包括SS(spin-orbit),SOO(spin-other-orbit),SO-SS-SOO)的贡献在大部分晶场区域超过了20%;在部分晶场区域,其他机理的贡献甚至超过SO机理的贡献.详细地分析了Macfarlane 零场分裂参量b02近似三阶微扰理论的收敛性,结果表明:该理论在大部分晶场区域收敛性较差.讨论了3d3态离子第一激发态2Eg分裂的微观起源.并利用群论方法解释了在C4v和C3v对称晶场中2Eg态分裂的不同机理.     

立方对称晶场中6S(3d5)态离子的磁相互作用及其自旋哈密顿参量的微观起源

基于完全对角化方法(complete diagonalization method, CDM), 研究了⁶S(3d⁵)态离子在立方对称晶场中的磁相互作用,分析了自旋哈密顿参量(a, g,Δg)的微观起源.研究中除了考虑研究者通常考虑的SO(spin-orbit)磁相互作用外,同时考虑了SS(spin-spin),SOO(spin-other-orbit),OO(orbit-orbit)磁相互作用.研究表明：⁶S(3d⁵)态离子在立方对称晶场中的自旋哈密顿参量起源于五种机理,即SO机理,SS机理,SOO机理,OO机理以及SO-SS-SOO-OO联合作用机理.文中研究了五种机理的相对重要性,结果表明：SO机理与SO-SS-SOO-OO联合作用机理在五种机理中最为重要.尽管SS,SOO,OO磁相互作用单独作用时对自旋哈密顿参量的贡献很小,但它们的联合作用SO-SS-SOO-OO机理对自旋哈密顿参量的贡献非常可观.此外研究表明：零场分裂参量a主要来自纯自旋四重态及自旋二重态与自旋四重态联合作用的贡献,而Zeemang(或者Δg)因子主要来自纯自旋四重态的贡献.纯自旋二重态对自旋哈密顿参量a与g(或者Δg)的贡献为零.在我们所选择的晶场区域,发现下列关系始终成立：a>0,a(-|Dq|)<a(|Dq|),g(-Dq)=g(Dq),a(-Dq,-ξ_d,B,C)=a(Dq,ξ_d, B,C),Δg(-Dq,-ξ_d, B, C)=Δg(Dq,ξ_d, B, C).作为本文理论的应用,研究了四种典型的Mn²⁺掺杂晶体材料,即Mn²⁺:KZnF₃,Mn²⁺: RbCdF₃,Mn²⁺: MgO,Mn²⁺: CaO,理论与实验测量符合很好. 关键词： 自旋哈密顿参量 6S(3d⁵)态离子')" href="#">⁶S(3d⁵)态离子 磁相互作用 完全对角化方法(CDM)     

立方对称晶场中6S(3d5)态离子的磁相互作用及其自旋哈密顿参量的微观起源

基于完全对角化方法(complete diagonalization method,CDM),研究了6S(3d5)态离子在立方对称晶场中的磁相互作用,分析了自旋哈密顿参量(a,g,Δg)的微观起源.研究中除了考虑研究者通常考虑的SO(spin-orhit)磁相互作用外,同时考虑了SS(spin-spin),SOO(spin-other-orbit),OO(orbit-orbit)磁相互作用.研究表明:6S(3d5)态离子在立方对称品场中的自旋哈密顿参量起源于五种机理,即SO机理,SS机理,SOO机理,OO机理以及SO-SS-SOO-OO联合作用机理.文中研究了五种机理的相对重要性,结果表明:SO机理与SO-SS-SOO-OO联合作用机理在五种机理中最为重要.尽管SS,SOO,OO磁相互作用单独作用时对自旋哈密顿参量的贡献很小,但它们的联合作用SO-SS-SOO-OO机理对自旋哈密顿参量的贡献非常可观.此外研究表明:零场分裂参量a主要来自纯自旋四重态及自旋二重态与自旋四重态联合作用的贡献,而Zeeman g(或者Δg)因子主要来自纯自旋四重态的贡献.纯自旋二重态对白旋哈密顿参量a与g(或者△g)的贡献为零.在我们所选择的晶场区域,发现卜列关系始终成立:a＞0,a(-|Dq|)＜a(|Dq|),g(-Dq)=g(Dq),a(-Dq,-ξd,B,C)=a(Dq,ξd,B,C),△g(-Dq,-ξd,B,C)=△g(Dq,ξd,B,C).作为本文理论的应用,研究了四种典型的Mn2 掺杂晶体材料,即Mn2 :KZnR,Mn2 :RbcdF3,Mn2 :MgO,Mn2 :CaO,理论与实验测量符合很好.     

三角对称晶场中6 S(3d5)态离子零场分裂参量的微观起源

基于完全对角化方法(complete diagonalization method, CDM), 研究了⁶ S(3d⁵)态离子在三角晶场(包括C_3v,D₃,D_3d点群对称晶场)中零场分裂(zero-field splitting, ZFS)参量D和(a-F)的微观起源.研究中除了考虑研究者通常考虑的SO(spin-orbit)磁相互作用外,同 关键词： 6 S(3d⁵)态离子')" href="#">⁶ S(3d⁵)态离子 零场分裂参量 磁相互作用 完全对角化方法     

轴对称晶场中d3离子激发态对4A2基态自旋哈密顿参量的影响

采用完全对角化方法，讨论了三角对称和四角对称下d³离子自旋二重态和自旋四重态对基态⁴A₂(⁴F)自旋哈密顿(SH)参量(包括零场分裂(ZFS)和g因子)的影响机理. 并对影响基态SH参量的四种机理(SO机理，SS机理，SOO机理和SO-SS-SOO联合机理)进行了分析. 结果表明，自旋二重态与四重态对d³离子基态零场分裂都具有重要贡献；而基态g因子主要由四重态决定，二重态对g因子贡献很小. 此外，发现SS机理和SOO机理对基态EPR参量的贡献主要由四重态决定，二重态的影响很小.     

轴对称晶场中d3离子激发态对4A2基态自旋哈密顿参量的影响

采用完全对角化方法,讨论了三角对称和四角对称下d3离子自旋二重态和自旋四重态对基态4A2(4F)自旋哈密顿(SH)参量(包括零场分裂(ZFS)和g因子)的影响机理.并对影响基态SH参量的四种机理(SO机理,SS机理,SOO机理和SO-SS-SOO联合机理)进行了分析.结果表明,自旋二重态与四重态对d3离子基态零场分裂都具有重要贡献;而基态g因子主要由四重态决定,二重态对g因子贡献很小.此外,发现SS机理和SOO机理对基态EPR参量的贡献主要由四重态决定,二重态的影响很小.     

三角对称下3d3离子2E态g因子性质研究

采用完全对角化方法,以尖晶石结构的ZnAl₂Ｏ₄:Cr^3＋,ZnGa₂Ｏ₄:Cr^3＋和MgAl₂Ｏ₄:Cr^3＋系列晶体为例,联系晶格局域结构,对三角对称下3d³离子²E态g因子性质进行了研究.研究中考虑了包括自旋与自旋相互作用、自旋与另一轨 关键词： 2E态g因子')" href="#">²E态g因子 3离子')" href="#">3d³离子 尖晶石结构 磁相互作用     

掺Gd3+钼酸盐AMoO4 (A=Ca,Sr, Ba,Pb)自旋哈密顿参量的理论计算

采用基于单电子晶体场机制的对角化能量矩阵方法, 计算了Gd³⁺在钼酸盐AMoO₄ (A=Ca, Sr, Ba, Pb)晶体中的自旋哈密顿参量(g因子g_//, g_⊥和零场分裂b₂⁰, b₄⁰, b₄⁴, b₆⁰, b₆⁴). 矩阵中的晶体场参量采用重叠模型计算. 计算结果显示, 应用三个合理的可调参量[即重叠模型中的内禀参量A₂ (R₀), A₄ (R₀)和A₆ (R₀)], 计算的七个自旋哈密顿参量与实验结果符合甚好, 表明该方法可用于计算或解释Gd³⁺在晶体中的自旋哈密顿参量. 关键词： AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体')" href="#">AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体 自旋哈密顿参量 晶体场理论 对角化能量矩阵     

三角对称晶场中4A2(3d3)态离子EPR参量的SS和SOO机制

考虑了在以前工作中被忽略的自旋与自旋 (Spin spin(SS) )磁相互作用以及一个电子自旋与另外电子轨道 (Spin other orbit (SOO) )之间的磁相互作用 ,用VisualBasic6.0设计了新的CDM/EPR计算程序 .该程序不仅能计算 4 A2 (3d3)态离子在晶体中的EPR参量 ,而且能计算体系的光谱精细结构 .利用该程序研究了红宝石晶体与绿宝石晶体的EPR参量与光谱精细结构 ,理论与实验符合甚好 .在此基础上 ,研究了SS与SOO磁相互作用对EPR参量及其光谱的贡献 .发现在磁相互作用的三个部分中 ,EPR参量的主要来源是旋 轨 (Spin orbit (SO) )耦合相互作用 ;SS磁相互作用对零场分裂 (Zero fieldsplitting(ZFS) )参量D具有重要贡献 ,在研究中不能被忽略 ,而SOO磁相互作用对ZFS参量D的贡献较小 ;SS与SOO磁相互作用对Zeemang因子以及光谱的贡献甚微     

掺杂晶体材料ZnGa_2O_4:Fe~(3+)局域结构畸变及其微观自旋哈密顿参量研究

基于Newman的晶场叠模型与微观自旋哈密顿理论,建立了ZnGa2O4:Fe3+晶体材料中磁性离子Fe3+局域结构与其自旋哈密顿(spin-Hamiltonian,SH)参量(包括二阶零场分裂(zero-field splitting,ZFS)参量D,四阶ZFS参量(a-F),Zeeman g因子:g//,g⊥,△g(=g//-g⊥))之间的定量关系.采用以全组态完全对角化方法为理论背景的CFA/MSH(Crystal Filed Analysis/Microscopic Spin Hamiltonian)研究软件,研究了ZnGa2O4:Fe3+材料中磁性离子Fe3+的SH参量与其局域结构的依赖关系.研究表明:对于ZnGa2O4:Fe3+晶体材料,当磁性离子Fe3+的局域结构畸变参数△R=0.0487 nm,△θ=0.192°时,其基态SH参量理论计算结果与实验测量符合很好,进一步表明Fe3+掺入晶体材料后将引起磁性Fe3+离子局域结构的微小畸变,但其仍然保持D3d点群对称局域结构.在此基础上研究分析了SH参量的微观起源,结果表明:ZnGa2O4:Fe3+晶体材料的SH参量主要来源于SO(spin-orbit)磁相互作用机理,来自其他磁相互作用机理(包括SS(spin-spin),SOO(spin-other-orbit),OO(orbit-orbit),SO-SS-SOO-OO)的贡献比较小.     

Al2O3:V3+晶体局域结构及其自旋哈密顿参量研究

提出了解释掺杂离子局域结构畸变的配体平面移动模型，建立了此模型下晶体微观结构与自旋哈密顿参量之间的定量关系.在考虑自旋与自旋、自旋与另一电子轨道和轨道与轨道作用等微小磁相互作用的基础上，采用全组态完全对角化方法，对Al₂O₃晶体中V³⁺的局域结构和自旋哈密顿参量进行了系统的研究.结果表明，V³⁺掺入Al₂O₃晶体后，上下配体氧平面间距离增大了0.0060 nm.从而成功地解释了Al₂O₃:V³⁺晶体的自旋哈密顿参量.在此基础上，研究了三角晶场下3d²离子自旋哈密顿参量的微观起源.研究发现，自旋三重态对自旋哈密顿参量的贡献是主要的，微小磁相互作用对自旋哈密顿参量的贡献只与自旋三重态有关.     

Investigations of the electron paramagnetic resonance parameters and the tetragonal local structure for (VCl6)4- coordination complex in MCl:V2+ (M=Na, K, Rb) systems

By simulating the electron paramagnetic resonance (EPR) and optical spectra on the basis of the 120×120 complete energy matrix, this paper determines the local lattice structure parameters R1 and R2 for MCl:V2+ (M=Na, K, Rb) systems at 77 K, 195 K and RT (room temperature 295 K or 302 K), respectively. The theoretical results indicate that there exists a compressed distortion in MCl:V2+ systems. Meanwhile, it finds that the structure parameters R1, R2 and |△R| (= R1-R2) increase with the rising temperature. Subsequently, from the analysis it concludes that the relation of EPR parameter D vs.△R is approximately linear. Finally, the effects of orbital reduction factor k on the g factors for the three systems have been discussed.     

Defect model and spin-Hamiltonian parameters for the tetragonal Nd center in the tetragonal phase of SrTiO3 crystal

The spin-Hamiltonian parameters (g factors g_∥, g_⊥ and hyperfine structure constants ¹⁴³A_∥, ¹⁴³A_⊥, ¹⁴⁵A_∥ and ¹⁴⁵A_⊥) of the tetragonal Nd³⁺ center in the low-temperature (T≈4.2 K) tetragonal phase of SrTiO₃ are calculated from a diagonalization (of energy matrix) method. In the method, the Zeeman and hyperfine interaction terms are attached to the conventional Hamiltonian and a 52×52 energy matrix concerning the ground term ⁴H_J (J=9/2, 11/2, 13/2, 15/2) is constructed. The Nd³⁺ center is attributed to Nd³⁺ occupying the 12-fold coordinated Sr²⁺ site in SrTiO₃. Differing from the defect model assumed in the previous paper that the tetragonal distortion of this Nd³⁺ center is due to the association of one interstitial oxygen ion at a nearest neighborhood of Nd³⁺ and the Nd³⁺ displacement Δz along C₄ axis, we suggest that it is due to the distortion of SrTiO₃ lattice in the tetragonal phase. The calculated g factors g_∥ and g_⊥ show good agreement with the experimental values, suggesting that our defect model of Nd³⁺ center in SrTiO₃ is reasonable. The experimental hyperfine structure constants were not reported and so our calculated results remain to be checked by EPR experiment.     

Investigations of the spin-Hamiltonian parameters and defect structures for Gd ions in YMO4 (M=V, P, As) crystals

A 56×56 energy matrix containing the ground multiplet ⁸S_7/2 and the excited multiplets ⁶L_7/2 (where L=P, D, F, G, H, I) for 4f⁷ ion Gd³⁺ at a tetragonal crystal field and under an external magnetic field is constructed. By diagonalizing the energy matrix, the spin-Hamiltonian parameters (g factors g_‖, g_⊥ and zero-field splittings b₂⁰, b₄⁰, b₄⁴, b₆⁰, b₆⁴) for Gd³⁺ ion at the tetragonal Y³⁺ site of YMO₄ (M=V, P, As) crystals are calculated. The calculated results are in reasonable agreement with the experimental values. The defect structures of Gd³⁺ centers in YMO₄ crystals are estimated from the calculation. The results are discussed.     

Investigations of the spin-Hamiltonian parameters for Er3+ ions in AlN crystal

The spin-Hamiltonian parameters (g factor g _//, g _⊥ and hyperfine structure constants A _//, A _⊥) for Er³⁺ ion at the trigonal Al³⁺ site of AlN crystal are calculated by diagonalising the 52 × 52 energy matrix. The matrix are related to the ground mutiplet ⁴I_15/2 and the first to third excited multiplets ⁴I_13/2, ⁴I_11/2 and ⁴I_9/2 for 4f¹¹ ions in trigonal crystal field under an external magnetic field. The crystal-field parameters used in the matrix are obtained from the superposition model and the local lattice relaxation due to the substitution of Er³⁺ for Al³⁺ is considered. The calculated spin-Hamiltonian parameters are in reasonable agreement with the experimental values and the signs of hyperfine structure constants are suggested. The results are discussed.     

Optical parameters and energy levels splitting of Ho^3＋ in Ho^3＋： GdVO4

Ho^3＋ ： GdVO4 is a new laser material suitable for high-power laser systems. In this paper we measure the absorption spectra of Ho^3＋ in the sample Ho^3＋： GdVO4. The intensity parameters are calculated by using the Judd-Ofelt theory. Some predicted spectroscopic parameters, such as the spontaneous radiative transition rate, branching ratio and integrated emission cross section are dealt with. And we also compare the optical parameters with those of other materials. From these results, it is found that there are many transitions which have large oscillator strengths and large integrated emission cross sections. Especially the transitions such as ^5 F4 → ^5 I 8, ^5 S2→^5 I8, ^5 F5 → ^5 I8 and ^5 I7 →^ 5 I8 are useful in solid-state lasers and other fields. Finally, we discuss the splitting of the energy levels of Ho^3＋ in the crystal GdVO4 based on the group theory.