共查询到11条相似文献,搜索用时 100 毫秒
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PNP和NPN高频异质结双极晶体管的设计有明显不同,这主要归因于砷化镓中电子与空穴的迁移率存在显著差别。这种差别在基区和子集电区外延层的设计中体现得尤为明显。文中详细讨论了PNP和NPN两种类型的异质结双极晶体管各自外延层的设计考虑。 相似文献
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提高射频功率器件的鲁棒性有利于增强器件的抗静电放电能力和抗失配能力.为了直观地了解器件内部发生的电学过程,本文研究了高鲁棒性N型沟道RF-LDMOS(Radio Frequency Lateral Diffusion MOS)在TLP(Transmission Line Pulse)应力下的电学机理.利用0.18μm BCD(Bipolar/CMOS/DMOS)先进制程,实现了特定尺寸器件的设计与流片.通过实测与仿真的对比,发现静电放电失效的随机性、芯片内部的热效应是导致仿真和实测差异的非理想因素.通过对TLP仿真的各阶段重要节点的分析,证明了源极下方的P型埋层有利于提高空穴电流的泄放能力,从而提高RF-LDMOS的鲁棒性. 相似文献
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Formation of lateral thin-film 700-V insulated-gate bipolar transistors (IGBTs) on Si-semiconductor-on-insulator (Si-SOI) substrates by using retrograde p-well double implantation scheme has been proposed. With a low thermal budget for p-well formation, retrograde high-energy boron implantation is employed to cause a high dopant concentration in the bulk region, and additional low-energy boron implantation is carried out for alleviating the surface punch-through of MOSFET (metal-oxide-semiconductor-field-effect-transistor) structure. As compared to the conventional p-well formation process, the retrograde double implantation scheme can lead to better latchup immunity, due to a considerably higher dopant concentration and thus lower well resistance in the p-well bulk region. In addition, owing to a lower surface dopant concentration, the retrograde double implantation scheme can lead to better on-state characteristics than the conventional process, while achieving comparable blocking voltage. 相似文献
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Mohsen Hayati Abbas Rezaei Rasoul Movahedi 《International Journal of Electronics》2013,100(7):907-923
This article presents an accurate method based on artificial neural networks (ANNs) for DC and RF modelling of laterally diffused metal oxide semiconductor (LDMOS) transistors, under various temperature conditions. In LDMOS transistors, temperature is an effective factor, so the proposed models include this parameter. Two neural networks‐based procedures have been proposed for LDMOS transistor modelling, first for DC and second for RF modelling. In each case, two kinds of neural networks have been used, multilayer perceptron and radial basis function neural networks. Two models are compared to each other in terms of accuracy, and for both of them, an excellent agreement between modelled and measured data is obtained. The ANN model is developed and trained with the help of data obtained by simulation of a Si‐LDMOS transistor using ADS software. 相似文献
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水电厂发电具有无污染性,能够为当地居民生产生活提供可靠的电源,为促进水电厂进一步发展,可靠性管理被应用进来,随着它的应用给水电厂发展带来了一定好处.本文将从可靠性管理基本情况入手,分别研究可靠性管理在水电厂中的应用与成效. 相似文献
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研制了2.14GHz频段横向扩散金属氧化物半导体(LDMOS)晶体管的高效率E类功率放大器。采用并联谐振法结合ADS软件仿真提取出管子的关键参数Cds,并在此基础上进行电路仿真,设计了馈电网络和负载匹配网络,有效抑制谐波分量。给出了功率放大器的实验结果,输出功率达到38.55dBm时,附加效率达到64.1%,与仿真结果吻合良好。 相似文献