Structure and properties of molybdenum implanted with high-flux carbon ion

High purity molybdenum was implanted by C ion in a metal vapour vacuum arc (MEVVA) implanter. The influence of implantation parameters was studied by varying ion fluence and ion current density. The samples were implanted by 45 keV C ion with fluences from 1×10¹⁵ to 1×10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and nanoindenter. Different morphologies were observed on the surfaces of the as-implanted samples due to irradiation damage, and clearly related to implantation parameters. XRD spectra confirm formation of β-Mo₂C with ion fluences equal to or larger than 1×10¹⁶ ions/cm², and formation of -Mo₂C with ion fluence of 1×10¹⁸ ions/cm². The maximum nanohardness and maximum modulus of the as-implanted samples increased gradually with increasing ion fluence, and reached the corresponding maximum values with ion fluence of 1×10¹⁸ ions/cm². The experimental results suggest that the structure and properties of the as-implanted Mo samples exhibited strong dependence on implantation parameters.     

A model for a uniform steady-state vacuum arc with a hot anode

A model is formulated and evaluated for a Uniform electrical discharge sustained in vapor evaporated from an arc-heated anode. The plasma potential is positive with respect to both the cathode and anode. For a Cu anode, the anodic vapor dominates the plasma for current densities exceeding 8 kA/m². The anode heating potential is approximately 6.5 V, and the dominant cooling mechanism is evaporation for current densities exceeding 20 kA/m². Over the range 10 to 10000 kA/m², the electron density increases from 8×10¹⁷ to 5×10²³ m^-3, while the ionization fraction rises from 0.3% to 4%. At the lower end of this current range the electrical resistivity of 4 mΩ-m is determined primarily by electron-neutral collisions, while with increasing current the resistivity decreases to 0.7 mΩ-m, with electron-ion collisions contributing an equal share. This hot-anode vacuum arc may have potential for industrial application as a macroparticle-free high-deposition-rate coating source     

Spectroscopic investigation of a low current arc in pure fluorine

A pure fluorine 10-A DC arc has been operated in an Al₂O₃ tube of 18 mm diameter at atmospheric pressure. This arc was used to perform radially resolved spectroscopic end-on measurements in the visible and UV-spectral regions. An excitation temperature of 7800 K on the arc axis was determined from the intensity of atomic fluorine lines, and an ion density of 1.7×10 ²¹ m^-3 was determined from the half-width of the contamination line H_β. A Boltzmann plot of the affinity continuum in the UV-spectral region yields two groups of electrons. A group of hot electrons is characterized by a temperature that agrees with the excitation temperature, and a group of cold electrons has a temperature in accordance to the gas temperature of 4000 K. The absolute intensity of the affinity continuum gives and electron density of 1.3×10²⁰ m^-3 on the arc axis, which is lower than the density of both positive and negative ions in the discharge. From the difference between the electron and gas temperature, an elastic collision cross section between the electrons and F-atoms of 2×10^-20 m² is determined     

Surface tension and density measurements for indium and uranium using a sessile-drop apparatus with glow discharge cleaning

The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield _mp = 7.05 × 10³kg/m³, d/dT = −0.776 kg/m³·°C, and γ_mp = 0.568 N/m, dγ/dT = −9.45 × 10⁻⁵ N/m·°C. The results for uranium at the melting point are _mp = 17.47 × 10³ kg/m³ and γ_mp = 1.653 N/m.     

Optimization of Neutrino Oscillation Parameters Using Differential Evolution

We show how the traditional grid based method for finding neutrino oscillation parameters m2 and tan 2θ can be combined with an optimization technique,Differential Evolution(DE),to get a significant decrease in computer processing time required to obtain minimal chi-square(χ2) in four different regions of the parameter space.We demonstrate efficiency for the two-neutrinos case.For this,the χ2 function for neutrino oscillations is evaluated for grids with different density of points in standard allowed regions of the parameter space of m2 and tan 2θ using experimental and theoretical total event rates of chlorine(Homestake),Gallex+GNO,SAGE,Superkamiokande,and SNO detectors.We find that using DE in combination with the grid based method with small density of points can produce the results comparable with the one obtained using high density grid,in much lesser computation time.     

HL-2M装置真空室预装阶段检漏试验

通过在加工现场和安装现场搭建的真空辅助系统、四极质谱计及氦检漏仪组成的检漏系统,运用残余气体分析和氦质谱检漏方法在冷态下对HL-2M真空室扇形段及真空室整体进行了真空检漏试验.对漏点进行修复后,测试了真空室的极限真空度和总漏气率等.真空室经过72h的抽气后,真空度达到3.7×10?5Pa,超过了1.0×10?4Pa的预...     

Inductive plasma sources for plasma implantation and deposition

External and reentrant radio frequency inductive plasma sources are developed for plasma ion implantation and deposition processes in a 1.8 m³ vacuum vessel. Plasma densities in the range 10¹⁶ -10¹⁷ m^-3 desirable for the above processes. External plasma sources could not yield the required plasma densities because of high particle losses in the transition region between the source and the main vessel. The particle losses are clarified through experiments and analysis, with and without multipole magnetic confinement. Reentrant plasma sources eliminate transmission losses and yield high plasma densities with good spatial uniformity     

Structure and luminescence of a-plane GaN on r-plane sapphire substrate modified by Si implantation

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5×10¹³ cm^-2 to 5×10¹⁵ cm^-2, the n-type dopant concentration gradually increases from 4.6×10¹⁸ cm^-2 to 4.5×10²⁰ cm^-2, while the generated vacancy density accordingly raises from 3.7×10¹³ cm^-2 to 3.8×10¹⁵ cm^-2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1×10¹⁵ cm^-2, which ceases at the overdose of 5×10¹⁵ cm^-2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.     

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The multichannel bremsstrahlung measurement system on HL-2A tokamak has been using to observe the intensity of visible (535.1nm) bremsstrahlung radiation. Combined the intensity with plasma electron density and electron temperature, the effective ion charge measurements can be obtained on HL-2A tokamak. The 1×10¹⁹m⁻³ to4×10¹⁹m⁻³ experimental results show that when the plasma electron density increases from 1×10 m to 4×10 m , the effective ion charge number changes from 5 down to around 2. The bremsstrahlung radiation signal intensity is proportional to the quadratic plasma density. When the electron density is higher than 3×10¹⁹m⁻³, the multichannel bremsstrahlung measurement system can collect sufficient signal through the plasma, which enables the measurement of effective ion charge radial profile.     

Microwave studies of the superconducting state in Rb3C60

Methods of electron-spin resonance (ESR) and direct, non-linear field-modulated microwave absorption (FMMA) were applied for the measurements in low- and high-purity samples of rubidium-doped fullerene, Rb₃C₆₀. The coexistence of the normal strong ESR signals and regular series of weak absorption lines similar to those seen in systems of Josephson junctions was observed in the high-purity sample. The possible influence of the vortex lattice on the ESR signals was also studied. We determined from FMMA investigations using the Portis model the critical field μ₀H^* = 40 μT, the depinning current density J_c^*(μ₀H₀ = 1 mT) 4 × 10⁸ A/m² in low magnetic field and J_c^*(μ₀H₀ > 100 mT) 1.6 × 10⁸ A/m² in higher fields. These values were generally one order of magnitude higher than the highest corresponding values previously observed in high-temperature superconductors (HTS's).     

Microscopic high speed investigations of vacuum arc cathode spots

The main parameters and dimensions of cathode spots have been under discussion for years. To solve these current questions, a new system was specially designed. The image converting high speed framing camera (HSFC) combines a micrometer lateral resolution with a nanosecond time resolution and a very high optical sensitivity. This camera was used to study the microscopic behavior of vacuum arc cathode spots in a pulsed high current arc discharge on copper. The direct observation of these spots with high resolution revealed that one single cathode spot, as normally observed by optical means, consists of a number of simultaneously existing microscopic subspots, each with a diameter of about 10 μm and a mean distance of 30-50 μm between them. The mean existence time of these subspots on copper was found to be about 3 μs, where the position of a subspot remains unchanged (with an upper limit of about 5 μm) during its existence time. The lower limit of the current density in the cathode spots was estimated to be on the order of 10¹⁰-10¹¹ A/m². An upper limit of the crater surface temperature was estimated by a comparison between the brightnesses of a cathode spot and of a black body radiation lamp to about 3000 K     

HL-2A 装置中利用可见光谱段轫致辐射测量有效离子电荷数

通过测量可见光谱段的轫致辐射(λ=535.1nm)强度,结合等离子体电子密度和电子温度,HL-2A     

A two-component model for the electron distribution function in ahigh-current pseudospark or back-lighted thyratron

Temperature, energy, and densities of two electron distribution function components, including an isotropic bulk part and an anisotropic beam, are analyzed for a hydrogen pseudospark and/or back-lighted thyratron switch plasma with a peak electron density of 1-3×10¹⁵ cm^-3 and peak current density of ≈10⁴ A/cm². Estimates of a very small cathode-fall width during the conduction phase and high electric field strengths lead to the injection of an electron beam with energies ⩾100 eV and density of 10¹³-10¹⁴ cm^-3 into a Maxwellian bulk plasma. Collisional and radiative processes of monoenergetic beam electrons, bulk plasma electrons and ions, and atomic hydrogen are modeled by a set of rate equations, and line intensity ratios are compared with measurements. Under these high-current conditions, for an initial density n_H2=10¹⁶ cm^-3 and electron temperature of 0.8-1 eV, the estimated beam density is ≈10¹³ -10¹⁴ cm^-3. These results suggest the possibility of producing in a simple way a very high-density electron beam     

Ca3Y2Si3O12：Tm3+,Yb3+上转换发光粉的制备与发光性能研究

采用高温固相法成功制备了Ca₃Y₂Si₃O₁₂：Tm³⁺,Yb³⁺上转换蓝色发光材料。在980 nm 红外激光器激发下,发光粉呈现强烈的蓝光（475 nm）和近红外光（810 nm）以及较弱的红光（650 nm）发射,分别归因于Tm³⁺离子的¹G₄→³H₆、³H₄→³H₆和¹G₄→³F₄能级跃迁。随着Yb³⁺离子浓度的增加,发光粉上转换发射强度和发光亮度均呈现先增强后减弱的变化趋势。在最佳掺杂浓度下（Yb³⁺摩尔分数为15%）,蓝、红光强度分支比为12：1,色坐标为（0.129 2,0.152 3）。在3.9 W/cm²激发功率密度下,发光亮度可达6.8 cd/m²。上述结果证实,所制备发光粉呈现优异的蓝光上转换发射特性并具有潜在的应用价值。发光强度和激发光功率关系表明,所得上转换发射为三光子和双光子吸收过程。借助Tm-Yb体系能级结构详细讨论了上转换发射的跃迁机制。     

Two-dimensional observation of copper vapor in vacuum arcs bylaser-induced fluorescence

The density distribution and the velocity of copper neutral atoms emitted from a single cathode spot in 40 A vacuum arc were measured by the two-dimensional (2-D) laser-induced fluorescence method. The density was calibrated from the two-dimensional fluorescence image observed by a CCD camera. The gap space was almost filled with the copper atoms, and the density reached 5×10¹⁹/m³. We varied the wavelength of the laser light and measured the velocity of the copper atoms emitted from the cathode spot using the effect of Doppler shift. The velocity of the copper atoms was about 10 km/s     

Calculations of the dynamic dipole polarizabilities for the Li~+ ion

The B-spline configuration-interaction method is applied to the investigations of dynamic dipole polarizabilities for the four lowest triplet states(2~3S,3~3S,2~3P,and 3~3P) of the Li~+ ion.The accurate energies for the triplet states of n~3S,n~3P,and n~3D,the dipole oscillator strengths for 2~3S(3~3S)→n~3P,2~3P(3~3P)→n~3S,and 2~3P(3~3P)→n~3D transitions,with the main quantum number n up to 10 are tabulated for references.The dynamic dipole polarizabilities for the four triplet states under a wide range of photon energy are also listed,which provide input data for analyzing the Stark shift of the Li~+ ion.Furthermore,the tune-out wavelengths in the range from 100 nm to 1.2 μm for the four triplet states,and the magic wavelengths in the range from 100 nm to 600 nm for the 2~3S→3~3S,2~3S→2~3P,and 2~3S→3~3P transitions are determined accurately for the experimental design of the Li~+ ion.     

掺杂离子对白色长余辉发光材料Y2O2S:Tb3+, Eu3+,M2+ (M=Mg,Ca, Sr,Ba),Zr4+性能的影响

采用高温固相法制备了白色长余辉发光材料Y₂O₂S:Tb³⁺, Eu³⁺,M²⁺(M=Mg, Ca, Sr, Ba), Zr⁴⁺, 利用X晶体衍射、发光光谱、余辉曲线和热释光曲线等对制备的材料进行表征。结果表明:掺杂离子没有改变样品晶体结构和发射峰的位置,但对其发光强度、余辉时间及陷阱深度有较大的影响。在263 nm紫外光的激发下,469 nm和626 nm的发射分别对应于Eu³⁺的⁵D₂→⁷F₀、⁵D₀→⁷F₂跃迁,544 nm的发射对应于Tb³⁺的⁵D₄→⁷F₅跃迁,主要通过它们的混合产生白光。掺杂不同二价离子样品的余辉性能按Mg²⁺、Sr²⁺、Ca²⁺、Ba²⁺的顺序递减,其中掺杂Mg²⁺的样品,色度坐标为(0.29,0.32),陷阱深度为1.17 eV,余辉时间长达320 s(≥1 mcd/m²),表现出最佳的发光性能。     

Ab-initio calculation of the electronic structure and energetics of the unreconstructed Au(001) surface

The electronic structure, surface and relaxation energies, and the electric field gradient for the unreconstructed Au(001) surface were calculated by means of the ab-initio all-electron full-potential linearized augmented plane wave slab method. The valence states were calculated within the standard semi-relativistic approach whereas the core states are treated in a fully relativistic way. The Au(001) surface was modelled by free slabs of 5, 7, and 9 layers. From the 9-layer calculation a work function of 5.39 eV was obtained. For the surface energy a value of 1.30 J/m² for the unrelaxed geometry was derived from the total energies of the 7- and the 9-layer slabs. From total energy minimization of the 7-layer slab, a negative, inward relaxation of −2.6% and a relaxation energy of 14.3 × 10⁻³ J/m² were derived. To discuss a mechanism of reconstruction, particular surface states were analyzed in detail in terms of the band structure, layer-dependent density of states and the charge density distribution. Differences of surface and central-layer charge densities show a gain of charge in z-direction localised below and also, to a smaller extent, above the surface atoms. We find a very small gain of delocalised charge in the surface plane between the nearest neighbour positions at the expense of more localised s-d hybridised states. The electric field gradient component Φ_zz was obtained in a two energy window calculation for which the Au5p states were also treated as band states. The resulting Φ_zz values are −16.50 × 10¹⁷ V/cm² surface layer, and −3.3 × 10¹⁷ V/cm² for the subsurface layer.     

Surface chemical disorder and lattice strain of GaN implanted by 3-MeV Fe10+ ions

Chemical disorder on the surface and lattice strain in GaN implanted by Fe¹⁰⁺ ions are investigated. In this study, 3-MeV Fe¹⁰⁺ ions fluence ranges from 1×10¹³ ions/cm² to 5×10¹⁵ ions/cm² at room temperature. X-ray photoelectron spectroscopy, high-resolution x-ray diffraction, and high-resolution transmission electron microscopy were used to characterize lattice disorder. The transition of Ga-N bonds to oxynitride bonding is caused by ion sputtering. The change of tensile strain out-of-plane with fluence was measured. Lattice disorder due to the formation of stacking faults prefers to occur on the basal plane.     

The effect of nitrogen ion implantation on tungsten surfaces

X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to study the phase, composition and chemical states of elements at the tungsten surface. The measurement results indicate that nitrogen-containing phase of tungsten were formed by nitrogen ion implantation (energy 40 keV, implantation doses of 4×10¹⁷, 8×10¹⁷ and 1.6×10¹⁸ ions/cm²). The formation of the W_x(O,N) and WN in the surface layer occurred as a result of nitrogen ion irradiation. A decrease in concentration of W_x(O,N) is observed with increasing N⁺ while that WN increases. Due to residual oxygen in the chamber WO₃ still exists at the surface of the specimen.