Os1-xRexB4固溶体系的结构、力学和电子性质的第一性原理研究

利用第一性原理的计算方法,在维也纳从头计算模拟包(VASP)中计算了三种比例Re原子掺杂Os B₄的结构特征及稳定性、电子性质及力学性能.将P42/nmc相Os B₄中的Os元素进行Re元素的替代掺杂,并构建出Os_1-xRe_xB₄(x=0,0.0625,0.125,0.25)固溶体系的结构模型.结果表明:随Re含量的增高Os_1-xRe_xB₄的晶格常数和体积会略微增大,在x高于0.25后发生结构畸变;且P42/nmc-Os_1-xRe_xB₄(x=0,0.0625,0.125)的结构和热力学稳定;态密度主要来源于Os的5d电子和B的2s和2p电子,而Re原子的5d轨道电子对价带和导带态密度也均有贡献,并且随其含量的增高态密度峰值也增大;B-B键和B-Os键具有强共价相互作用是其具有较高的体积和剪切模量的主要原因.随着Re元素的浓度增加,结构的导电性和延展...     

The effect of Nb addition on the thermal stability and magnetic properties of Fe-based amorphous alloys with a wide supercooled liquid region

We have examined the effect of Nb addition on the thermal stability of the supercooled liquid before crystallization, the glass-forming ability and magnetic properties for the amorphous alloy series Fe₇₃Nb_xAl_5-xGe₂P₁₀C₆B₄ and Fe₆₃Co₇Nb_xZr_10-xB₂₀. The supercooled liquid regions (ΔT_x=T_x-T_g) have maximum values of 66 and 79K, respectively, for Fe₇₃Nb₁Al₄Ge₂P₁₀C₆B₄ and Fe₆₃Co₇Nb₄Zr₆B₂₀ alloys. The saturation magnetization σ_s of the Fe₇₃Nb_xAl_5-xGe₂P₁₀C₆B₄ alloy system is much higher than that of the Fe₆₃Co₇Nb_xZr_10-xB₂₀ alloy system, and is almost unchanged with an increasing Nb content from 0 to 3 at%. But the σ_s of the Fe₆₃Co₇Nb_xZr_10-xB₂₀ alloys decreases linearly with increasing Nb content. The coercive force H_c of the two alloy series can have a minimum value of 31A/m for Fe₇₃Nb₁Al₄Ge₂P₁₀C₆B₄ and 37A/m for Fe₆₃Co₇Nb₄Zr₆B₂₀. All these values are for the ribbons annealed at 773 and 873K for 15min in vacuum.     

Nb掺杂对还原性烧结的TiO2-δ陶瓷的晶体结构及热电性能的影响

利用传统的固相反应法在还原性气氛1200 ℃下分别制备出不同Nb掺杂量的Ti_1-xNb_xO_2-δ陶瓷样品.样品的粉末X射线衍射(XRD)结果显示:Nb掺杂量x较低时样品为多相混合,当Nb掺杂量x>0.02时样品为单一的四方相金红石型结构.在室温到900 K的测试温区,测试了单相样品(x=0.02,0.03,0.04)的电导率、Seebeck系数和热导率.测试 关键词： 氧化钛陶瓷 热电性能 氧空位     

铁电单晶(KxNa1-x)0.4(SryBa1-y)0.8Nb2O6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_1-x)_0.4(Sr_yBa_1-y)_0.8Nb₂O₆的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000?到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n₀³·γ_c高达730×10 关键词：     

(Bi,La)4Ti3O12-Sr(Bi,La)4Ti4O15共生结构铁电材料性能研究

采用固相烧结工艺，制备了不同La掺杂量(x=0.00，0.25，0.50，0.75，1.00，1.25和1.50) 的(Bi, La)₄Ti₃O₁₂-Sr(Bi, La)₄Ti4O₁₅ (SrBi_8-xLa_xT i₇O₂₇)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析 ，并测量铁 关键词： 4Ti₃O₁₂-SrBi₄Ti₄O₁₅')" href="#">Bi₄Ti₃O₁₂-SrBi₄Ti_{4O15 La掺杂 铁电性能 居里温度 弛豫铁电}     

3∶29型Gd3(Fe1-xCox)29-yCry化合物的成相与结构

通过X射线衍射分析和磁测量研究了Gd-Fe-Co-Cr四元系中对应于化学式Gd₃(Fe,Co,Cr)₂₉且Gd含量为一定值的截面内富Fe,Co区的相关系,重点探索了高Co含量3∶29型化合物合成的可能性,研究了3∶29型Gd₃(Fe_1-xCo_x)_29-yCr_y化合物的结构与磁性.研究结果表明,获得3∶29型单相Gd₃(Fe_1-xCo_x)_29-yCr_y化合物的范围为:y=5,0≤x≤0.7;y=5.5,0.7≤x≤0.8和y=6,0.8≤x≤0.9.基于对Gd₃(Fe_1-xCo_x)_29-yCr_y化合物成相条件的研究,成功地合成了纯Co基Gd₃Co_29-yCr_y化合物,其固溶范围为6.5≤y≤7.3.3∶29型单相Gd₃(Fe_1-xCo_x)_29-yCr_y化合物的晶体结构都属于单斜晶系,Nd₃(Fe,Ti)₂₉型结构,空间群为A2m.得到3∶29型单相Gd₃(Fe_1-xCo_x)_29-yCr_y化合物的固溶极限即Co含量的极大值与稳定元素Cr含量有关.Co原子的含量越高,所需稳定元素Cr的含量越大.值得注意的是,用Co原子替代Fe原子会导致Gd₃(Fe_1-xCo_x)_29-yCr_y化合物磁晶各向异性的显著改变.当x≥0.4时,化合物的磁晶各向异性从易面型转变为易轴型 关键词： 3(Fe_1-xCo_x)_29-yCr_y化合物')" href="#">Gd₃(Fe_1-xCo_x)_29-yCr_y化合物 相关系和相结构 X射线衍射 磁晶各向异性     

铁电-顺电扩散相转变的实验和统计模型

制备了扩散相转变铁电陶瓷系列(Ba_1-xLa_x)(Ti_1-yZr_y)O₃和扩散-非扩散相变铁电单晶系列K_0.2Na_0.2(Sr_pBa_1-p)_0.8Nb₂O₆。陶瓷采用一般铁电陶瓷制备工艺,单晶采用提拉法生长。测量了所有样品在-50—100℃范围内 关键词：     

R3(Fe1-xCox)29-yCry(R=Gd,Sm)化合物相稳定性研究

在制备出Gd₃(Fe_1-xCo_x)_29-yCr_{y化合物基础上，成功制备出Sm3(Fe1-xCox)29 -yCry化合物，通过x射线衍射和热磁分析对R3(Fe1-x< /sub>Co x)29-yCry 关键词： 3(Fe1-xCox)29-yCry化合物')" href="#">R3(Fe1-xCox)29-yCry化合物 相结构 单轴磁晶各向异性}     

铁基块体非晶合金在纳米压痕过程中的蠕变行为研究

利用纳米压痕技术研究了{［（Fe_0.6Co_0.4）_0.75B_0.2Si_0.05］_0.96Nb_0.04}₉₆Cr₄铁基块体非晶合金的室温蠕变行为及不同的加载速率对该块体非晶合金蠕变变形的影响.{［（Fe_0.6Co_0.4）_0.75B_{0.2< 关键词： 块体非晶合金 蠕变 EVEV模型 蠕变速率敏感指数}     

铁电钨青铜型晶体SBN和KNSBN的Raman谱研究

测得了Sr_1-xBa_xNb₂O₆(SBN)和(K_1-yNa_y)_z(Sr_1-xBa_x)_l-zNb₂O₆(KNSBN)晶体的Raman谱,并用群论和晶格动力学观点进行了讨论.为其掺杂改性提供了科学依据. 关键词：     

Investigation on the structural,electronic, elastic and mechanical properties of Ti2Al(C1-xOx) solid solutions: First-principles calculations

In the present work, the structural, electronic, elastic and mechanical properties of Ti₂AlC and Ti₂Al(C_1-xO_x) solid solutions were investigated using first-principles calculations for varied O content incorporation (x = 0, 0.125, 0.25, 0.375, 0.5). According to the calculation results, all Ti₂Al(C_1-xO_x) solid solutions with various x values are stable, and the bonding strength of the Ti–Al bond increases with the doping of O element. In addition, the shear modulus G and C₄₄ elastic constant of Ti₂Al(C_1-xO_x) solid solutions are both lower than the bulk modulus B, indicating that the phase has good damage tolerance. Not only that, compared with Ti₂AlC, the plasticity and toughness of Ti₂Al(C_1-xO_x) solid solutions are improved with the increase of O atom doping and doping ratio. Simultaneously, the doping of O atom is also beneficial to reduce the generalized stacking fault energy of Ti₂AlC, making the Ti₂Al(C_1-xO_x) solid solutions more prone to shear deformation, thereby further enhancing plasticity.     

(Bi0.5Na0.5)TiO3-Ba(Ti,Zr)O3 陶瓷的电性能研究

采用氧化固相法制备了(1-x)(Bi0.5Na0.5)TiO3-xBa(Ti0.95Zr0.05)O3(BNT-BZT)陶瓷,其中掺入量x的值分别为0,0.04,0.05,0.06,0.07.研究了BNT-BZT体系陶瓷的准同型相界以及陶瓷材料的微观结构和性能之间的关系,并探讨了陶瓷的介电性能和铁电等性能.通过探究Ba(Ti,Zr)O3(BZT)掺杂量对BNT 各性能的影响得出了当掺杂量x=0.05得到结构较为致密,介电,铁电性能较好的样本,对工业化研究和生产有重要的意义     

Calculated elastic properties of M2AlC (M=Ti, V, Cr, Nb and Ta)

M₂AlC phases, where M is a transition metal, are layered ternary compounds that possess unusual properties. In this paper, we have calculated the elastic properties of M₂AlC, with M=Ti, V, Cr, Nb and Ta, by means of ab initio total energy calculations using the projector augmented-wave method. We have derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline M₂AlC aggregates. We have estimated the elastic modulus of Cr₂AlC with 357.7 GPa while the values of all other phases are in the range 309±10 GPa. We suggest that this can be understood based on the calculated bond energies for the M-C bonds. Furthermore, our results indicate a profound elastic anisotropy of M₂AlC even compared to materials with a well-established anisotropic character such as α-alumina. Finally, we have estimated the Debye temperatures of M₂AlC from the average sound velocity.     

Electronic structure and bonding properties for Laves-phase RV2 (R=Ti, Nb, Hf, and Ta) compounds

The electronic structure and bonding properties of Laves-phase compounds RV₂ (R=Ti, Nb, Hf, and Ta) with C15 structure have been investigated using the full-potential linearized augmented plane-wave method. The results show that the chemical bonding is metallic–ionic–covalent in nature in these compounds, and the covalent bonding between V and V atoms strengthens with the atomic number, increasing among the RV₂ (R=Ti, Nb, Hf, and Ta) compounds. The density of states (DOS), equilibrium volume, and elastic properties are discussed, which is important for understanding the physical properties of RV₂ (R=Ti, Nb, Hf, and Ta) and may inspire future experimental research.     

Theoretical study of B2 type technetium AB (A=Tc,B=Ti,V, Nb and Ta) intermetallic compounds

The structural, electronic, elastic and thermal properties of the cubic AB type (A=Tc, B=Ti, V, Nb and Ta) technetium intermetallic compounds have been studied using the full potential linearized augmented plane wave (FP-LAPW) method within the generalized gradient approximation (GGA) and local density approximation (LDA) used for the exchange-correlation potential. The calculated lattice parameters agree well with the experimental results. The calculated electronic properties reveal that these compounds are metallic in nature with partial ionic bonding. The elastic constants obey the stability criteria for cubic system. Ductility for these compounds has been analyzed using the Pugh's rule and Cauchy's pressure revealing ductile in nature of all the compounds. Bonding nature is discussed using Fermi surface, band structure and charge density difference plots.     

Anisotropy of elasticity and minimum thermal conductivity of monocrystal M4AlC3 （M = Ti,Zr, Hf）

The elastic constants, elastic anisotropy index, and anisotropic fractional ratios of Ti4AlC3, Zr4AlC3, and Hf4AlC3 are studied by using a plane wave method based on density functional theory. All compounds are characterized by the elastic anisotropy index. The bond length, population, and hardness of the three compounds are calculated. The degrees of hardness are then compared. The minimum thermal conductivity at high temperature limitation in the propagation direction of [0001](0001) is calculated by the acoustic wave velocity, which indicates that the thermal conductivity is also anisotropic. Finally, the electronic structures of the compounds are analyzed numerically. We show that the bonding of the M4AlC3 lattice exhibits mixed properties of covalent bonding, ionic bonding, and metallic bonding. Moreover, no energy gap is observed at the Fermi level, indicating that various compounds exhibit metallic conductivity at the ground state.     

Theoretical investigation on radiation tolerance of M_(n+1)AX_n phases

Ternary M_(n+1)AX_n phases with layered hexagonal structures, as candidate materials used for next-generation nuclear reactors, have shown great potential in tolerating radiation damage due to their unique combination of ceramic and metallic properties. However, M_(n+1)AX_n materials behave differently in amorphization when exposed to energetic neutron and ion irradiations in experiment. We first analyze the irradiation tolerances of different M_(n+1)AX_n(MAX) phases in terms of electronic structure, including the density of states(DOS) and charge density map. Then a new method based on the Bader analysis with the first-principle calculation is used to estimate the stabilities of MAX phases under irradiation. Our calculations show that the substitution of Cr/V/Ta/Nb by Ti and Si/Ge/Ga by Al can increase the ionicities of the bonds,thus strengthening the radiation tolerance. It is also shown that there is no obvious difference in radiation tolerance between M_(n+1)AC_n and M_(n+1)AN_n due to the similar charge transfer values of C and N atoms. In addition, the improved radiation tolerance from Ti_3AlC_2 to Ti_2AlC (Ti_3AlC_2 and Ti_2AlC have the same chemical elements), can be understood in terms of the increased Al/TiC layer ratio. Criteria based on the quantified charge transfer can be further used to explore other M_(n+1)AX_n phases with respect to their radiation tolerance, playing a critical role in choosing appropriate MAX phases before they are subjected to irradiation in experimental test for future nuclear reactors.     

金属元素掺杂对TiAl合金力学性能的影响

利用基于密度泛函理论的第一性原理方法研究了金属元素X (X分别表示V, Nb, Ta, Cr, Mo和W)掺杂对TiAl合金性能的影响. 研究发现, 掺杂可以有效减小合金的各向异性, 增强Ti-Al 原子间的相互作用, 同时增强金属键性, 减弱共价键性, 有利于塑性变形. 在相同的压力下, 不同的掺杂浓度和掺杂元素对体积的影响不同. 通过计算不同掺杂体系的弹性常数、体弹模量和剪切模量可知: 当掺杂浓度为6.25%时, 相对于V, Nb和Ta, Cr, Mo和W掺杂能较好地改善TiAl金属间化合物的韧性; 当掺杂浓度为12.5%时, 相对其他掺杂元素Mo的韧化作用最强. 从Mo掺杂后TiAl体系的分波态密度和电荷密度图, 发现Mo和Ti 原子发生强烈的s-s, p-p, d-d电子相互作用, 有效地束缚了合金中Ti和Al原子的迁移, 有助于提高合金的稳定性和强度.     

Ti_3(Ge_(1-x)Si_x)C_2固溶体力学和热力学性能的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,系统研究了Ti_3(Ge_(1-x)Si_x)C_2(x=0, 0.5, 1)固溶体的晶体结构、弹性性质以及热力学性能.研究结果表明,Ti_3(Ge_(1-x)Si_x)C_2体系均具有力学和热力学稳定结构,并且为脆性材料;Ti_3(Ge_(1-x)Si_x)C_2固溶体的力学性能随Si含量的增加而提高;Ti_3(Ge_(1-x)Si_x)C_2固溶体在室温下具有稳定的晶格结构和较高的晶格热导率,有望用于一些需要良好散热性能电子元器件的封装材料.     

Half-metallicity and magnetism of the quaternary inverse full-Heusler alloy Ti<Subscript>2-x</Subscript>M<Subscript>x</Subscript>CoAl (M = Nb,V) from the first-principles calculations

Using the first-principles calculations based on density functional theory, we investigate the more d-electrons doping effects on the electronic structure and magnetism of the parent inverse Heusler alloy Ti₂CoAl by the substitution of Nb and V atoms for Ti(A) and Ti(B) atoms locating at the two inequivalent sublattices. The Ti₂CoAl is half-metallic with Fermi level near the top of the minority-spin valence band and hence its spin-polarization is easily reduced by the spin-flip excitation. Our total energy calculations show that the V/Nb doping at the Ti(A)/Ti(B) site is energetically favorable compared with the Ti(B)/T(A) site due to the lower total energy. Our band structure calculations indicate that for the V doped compounds, half-metallicity can be well retained regardless of doping sites and percentages except for the case of Ti(A)-site doping with x = 1, while for Nb doped compounds, the half-metallicity persists only in Ti(B)-site doping with different percentages. For the doped compounds with half-metallicity, the Fermi level shifts from the top of minority-spin valence band to the bottom of minority-spin conduction band with increasing content of x, and typically, the doped compounds (V in Ti(A) and Ti(B) sites at x = 0.75 and 0.5, respectively; Nb in Ti(B) site at x = 0.5), whose Fermi levels are adjusted to the expected positions to effectively inhibit the spin-flip excitation are promising candidates for spintronics applications.