GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化.研究发现,在低温下用连续光(Cw)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源.然而在脉冲激发下,情况完全不同.在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源.通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰.这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争.我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度"S"形变化的主要根源.     

CdSe/ZnSe复合结构非对称量子阱的发光特性

利用MOCVD技术在GaAs衬底上外延生长了非对称量子阱结构CdSe/ZnSe材料,通过对其稳态变温光谱及变激发功率光谱,研究了其发光特性。稳态光谱表明:在82～141K时,观测到的两个发光峰来源于不同阱层厚度的量子阱激子发光,用对比实验验证了高能侧发光的来源。宽阱发光强度先增加后减小,将其归结为激子隧穿与激子热离化相互竞争的结果。通过Arrhenius拟合,对宽阱激子热激活能进行了计算。82K时变激发功率PL光谱表明:由于激子隧穿的存在,使得窄阱发光峰位不随激发功率变化而变化,宽阱发光峰位随激发功率增加发生了蓝移,并对激子隧穿进行了实验验证。     

GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化。研究发现,在低温下用连续光(CW)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源。然而在脉冲激发下,情况完全不同。在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源。通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰。这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争。我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度“S”形变化的主要根源。     

CdSe/CdMnSe多量子阱的激子光学性质的研究

用分子束外延在GaAs衬底上生长了CdSe/CdMnSe多量子阱结构.利用X射线衍射(XRD)、变密度激发的PL光谱、变温度PL光谱和变密度激发的ps时间分辨光谱研究了CdSe/CdMnSe多量子阱结构和激子复合特性.讨论了随温度升高辐射线宽展宽和辐射复合效率降低的机理.发现不同激发密度下发光衰减时间不同,认为它的机理可能是无辐射复合引起的.在该材料中观测到激子激子散射发射峰,它被变密度激发和变温度PL光谱所证实. 关键词： CdSe/CdMnSe 量子阱 光学性质     

InGaAs/GaAs应变量子阱的光谱研究

分别用光致发光谱（PL），光伏谱（PV）及时间分辨谱（TRPL）的方法，测量了应变InGaAs/GaAs单量子阱和多量子阱在不同温度下的光谱，发现单量子阱与多量子阱有不同的光学4性质。多量子阱PL谱发光峰和PV谱激子峰的强度与半高宽都比单量子阱的大，但单量子阱的半高宽随着温度的升高增大很快，这是由激子－声子耦合引起的，通过时间分辨谱研究发现了量子阱子能级之间的跃迁，多量子阱的发光寿命明显比单量子阱的长，我们利用形变势模型对量子阱的能带进行了计算，很好地解释了实验结果。     

GaAs1-xSbx/GaAs单量子阱的光学特性研究

用选择激发光荧光研究了分子束外延生长的GaAsSb/GaAs单量子阱的光学性质,第一次同时观察到空间直接(Ⅰ类)和间接(Ⅱ类)跃迁.它们表现出不同的特性:Ⅰ类跃迁具有局域化特性,其发光能量不随激发光能量而变;Ⅱ类发光的能量位置随激发功率的增大而蓝移,也随激发光能量的增加而蓝移,复合发光发生在位于异质结GaAs一侧的电子和GaAsSb中的空穴之间,实验结果可以很好地用电荷分离造成的能带弯曲模型来解释,这也是空间间接跃迁的典型特性.还用光荧光的激发强度关系和时间分辨光谱进一步论证了GaAsSb/GaAs能带排列的Ⅱ类特性,并通过简单计算得到了应变和非应变状态下GaAsSb/GaAs异质结的带阶系数.     

LP-MOCVD生长(ZnCdTe,ZnSeTe)/ZnTe复合量子阱的激子发光研究

用低压金属有机化学气相沉积(LP-MOCVD)的方法在GaAs(100)衬底上生长了(ZnCdTe，ZnSeTe)／ZnTe复合量子阱结构。测量了生长样品的光致发光(PL)谱，得到两个发光峰(记为Il，I2)，分析认为高能侧的峰为Zn0．9Cd0．1Te浅阱峰，而低能侧的峰为ZnSe0．2Te0.8深阱层的发射。对样品进行了变激发强度的PL谱测量，当激发强度增加时，PL谱中两个发光峰的比值(I2／I1)开始时迅速增加，然后缓慢减小。这是由于浅阱中的电子和空穴隧穿入深阱中导致空间电荷的分离，从而在复合量子阱结构中产生了一个内建电场所引起的。     

GaAs1-xSbx/GaAs单量子阱的光学特性研究

用选择激发光荧光研究了分子束外延生长的GaAsSb/GaAs单量子阱的光学性质，第一次同时观察到空间直接(Ⅰ类)和间接(Ⅱ类)跃迁.它们表现出不同的特性：Ⅰ类跃迁具有局域化特性，其发光能量不随激发光能量而变；Ⅱ类发光的能量位置随激发功率的增大而蓝移，也随激发光能量的增加而蓝移，复合发光发生在位于异质结GaAs一侧的电子和GaAsSb中的空穴之间，实验结果可以很好地用电荷分离造成的能带弯曲模型来解释，这也是空间间接跃迁的典型特性.还用光荧光的激发强度关系和时间分辨光谱进一步论证了GaAsSb/GaAs能带排 关键词： GaAsSb/GaAs 选择激发 Ⅱ类跃迁     

Yb:YAG晶体性能实验测量

为了测量脉冲时间宽度小于20 ns时的射线时间分辨图像,发展了新型无机闪烁体Yb:YAG,并实验测量了晶体的发光衰减时间、X射线激发发光光谱、相对发光效率和空间分辨等性能,研究了Yb:YAG晶体的发光性能。实验表明,Yb:YAG发光有三种衰减成分,快成分衰减常数为1.2 ns,慢成分衰减常数与射线种类有关;X射线激发发光光谱在250~800 nm范围,有三个发光峰,分别为320,380和500 nm,且320 nm处强度最大;相对发光效率为1900 ph/MeV;使用钨分辨卡测得Yb: YAG空间分辨能力为2 lp/m,使用刀口法测得空间调制传递函数为0.5时的频率为0.7 lp/mm。结果说明Yb:YAG晶体性能能够满足所需测量要求。     

Si_(1-x)Ce_x/Si量子阱发光材料制备及特性研究

在si(100)衬底上用分子束外延成功生长了Si_(1-x)Ge_x/si量子阱发光材料,发现在生长过程中背景杂质含量直接影响材料的发光特性,用光致发光(PL)和卢瑟福背散射(RBS)对样品质量进行标定。在PL测量中观察到合金量子阱带边激子分辨峰,并对发光峰能和峰宽作了讨论。     

基于分子束外延生长的1.05 eV InGaAsP的超快光学特性研究

利用分子束外延方法制备了应用于四结光伏电池的1.05 eV InGaAsP薄膜, 并对其超快光学特性进行了研究. 温度和激发功率有关的发光特性表明: InGaAsP材料以自由激子发光为主. 室温下InGaAsP材料的载流子发光弛豫时间达到10.4 ns, 且随激发功率增大而增大. 发光弛豫时间随温度升高呈现S形变化, 在低于50 K时随温度升高而增大, 在50–150 K之间时减小, 而温度高于150 K时再次增大. 基于载流子弛豫动力学, 分析并解释了温度及非辐射复合中心浓度对样品材料载流子发光弛豫时间S形变化的影响.     

水溶性CdTe量子点的稳态和纳秒时间分辨光致发光光谱

报道了以飞秒脉冲激光为激发光源的水溶性CdTe量子点(QDs)的稳态荧光光谱和纳秒时间分辨荧光光谱.实验发现CdTe量子点的荧光光谱峰值位置随激发波长变化发生明显移动，激发脉冲波长越长，荧光峰位红移越大.荧光动力学实验数据显示，在400nm和800nm脉冲激光激发下，水溶性CdTe量子点的荧光光谱中均含有激子态和诱捕态两个衰减成分，两者的发射峰相距很近，诱捕态的发射峰波长较长.在800nm脉冲激光激发下的诱捕态成分占总荧光强度的比重比400nm激发下的约高3倍，其相对强度的这种变化导致了稳态荧光发射峰位的红移. 关键词： CdTe 量子点 时间分辨 荧光光谱 上转换荧光     

时间分辨傅里叶变换红外光谱法研究聚偏氟乙烯的晶变

本文用时间分辨傅里叶变换红外光谱（ＴＲ－ＦＴＩＲＳ）法研究了聚偏氟乙烯（ＰＶＤＦ）的晶型转变，并认５０８ｃｍ＾－１峰的增强和５２８ｃｍ＾－１峰的减弱表示ａ晶型向β晶型的转变，瞬变的初期时间约５ｍｓ，在晶型转变中伴随有“磁滞回线”的非线性效应。     

Carrier recombination kinetics in (3 1 1)A InGaAs sidewall quantum wires

We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantum wires (QWR) on patterned GaAs (3 1 1)A substrates by means of picosecond time-resolved photoluminescence (PL). A pronounced dynamical red shift of the QWR-PL band when increasing the delay time after the pulse excitation is observed. In addition, time-resolved data show a significant shortening of the PL decay time from the wire at short delay and when high excitation power is used. The data are compared with theoretical predictions. The results, i.e. the dynamical red shift observed in the wire emission and the shortening of the PL decay with increasing the excitation density, are interpreted in terms of a dynamical screening effect of the piezoelectric field.     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

Time-resolved photoluminescence study of Ga In P alloys

The time-resolved photoluminescence spectra of ordered and disordered Ga_0.52In_0.48P alloys were studied at room temperature and at 77 K liquid nitrogen, respectively. The ordered samples have well fitted two exponential processes decay curves and the time constants are sample dependent and have little relationship with the ordering degree. The decay curve of disordered sample shows that it has single exponential process and its lifetime has a tendency of reduction with the decrease of excitation intensity. The photoluminescence spectra with different delay time at 77 K show that the ordered samples exhibit about 6 ∼ 10 meV blue-shift of PL peak energy with the delay time. Received 13 December 2001 Published online 19 July 2002     

Nonlinear optical properties of 75TeO2－20Nb2O5－5ZnO glasses doped with CeO2

Nonlinear optical properties of 75TeO_2－20Nb_2O_5－5ZnO glasses doped with CeO_2 have been investigated with a self-diffracted time-resolved degenerate four-wave mixing (DFWM) technique at different excitation intensities and lattice temperatures. The DFWM signal exhibits three peaks at higher excitation intensities, where a main peak appears at zero delay time and two rather weak side peaks are located symmetrically at the negative and positive time delay. Due to destructive interferences between the fifth- and third-order polarizations, the line-shape of the main peak around the zero time delay evolves from single peak into a double-peak structure with increasing excitation intensity. Two side peaks emerge at the positive and negative time delay and gradually intensify with increasing excitation intensity or lattice temperature, and their positions are independent of the pulse duration, temperature and excitation intensity, which are attributed to the many-body Coulomb interaction.     

Upconversion luminescence of CdTe nanocrystals by use of near-infrared femtosecond laser excitation

We study the steady-state and time-resolved luminescent properties of CdTe nanocrystals by one- and two-photon excitation with a femtosecond laser. We observe that 1208 nm excitation causes a shift of the emission peak of about 20 nm to the infrared compared with 400 nm laser excitation. It is found that upconversion luminescence is composed of a photoinduced trapping and a band edge excitonic state and produces the observation of biexponential decay kinetics. We conclude that the redshift of the emission peak is caused by the relative change in luminescence intensity between excitonic and trapping states.     

Upconversion luminescent characteristics and peak shift of CdSeS nanocrystals under different wavelength laser excitation

Upconversion luminescence was obtained from CdSeS nanocrystals (NCs) under 800 nm femtosecond laser excitation. The structural and optical characteristics of the CdSeS NCs were investigated experimentally by use of UV–visible absorption spectroscopy, transmission electron microscopy, X-ray diffractometry, and time-resolved luminescence dynamics. Peak shift of luminescence in CdSeS NCs can be readily observed under different wavelength femtosecond excitation. The pump power dependence of the luminescence intensity and time-resolved decay revealed that one, two, and three-photon absorption occur. It was found that upconversion luminescence is composed of photoinduced trapping and a band-edge excitonic state, and two types of species are involved in the biexponential luminescence decay kinetics. With increasing Se-doped composition, luminescence lifetimes of CdSeS NCs with similar sizes become shorter. This is not consistent with the changes of undoped CdS NCs and is ascribed to impurity level increased doping in the energy gap, which is favorable for trapping luminescence. A simple energy level of doping NCs is used to interpret upconversion luminescence and the peak shift of steady-state emission.